The document describes the design of a low power consumption and low phase noise voltage controlled oscillator (VCO). It aims to implement the design of a VCO presented in a base paper in 180nm technology and then 45nm technology to achieve lower phase noise results. The key steps include designing the schematic and layout of the VCO in Cadence Virtuoso, simulating and analyzing the power consumption and phase noise, and comparing the results to the base paper. The design uses a combination of cross-coupled and balanced VCO configurations along with a LC tank circuit to minimize phase noise. Future work involves completing the 180nm and 45nm designs and analyses to optimize for lower power and noise.
Design of ring oscillator using controlled low voltage swing inverter khush_19
Hello everyone. I am khushboo kumari.
I am pursuing M.tech from NIT Agartala(2017-2019). This is my 3rd semester partial project where i have successfully implemented the design of low voltage swing inverter. In the 4th semester i would be designing ring oscillator by connecting odd number of this inverter design in cascade.
I was able to complete this under the supervision of my respected guide Bidyut kumar .
Hope this presentation helps you to some extent.
Thank you.
Please do comment me if you have any doubts/ query/ or suggestions.
Study of vco_Voltage controlled OscillatorNeha Mannewar
Voltage controlled Oscillator,Voltage controlled oscillator is a type of oscillator where the frequency of the output oscillations can be varied by varying the amplitude of an input voltage signal.Voltage controlled oscillators are commonly used in frequency (FM), pulse (PM) modulators and phase locked loops (PLL). Another application of the voltage controlled oscillator is the variable frequency signal generator itself.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Design of ring oscillator using controlled low voltage swing inverter khush_19
Hello everyone. I am khushboo kumari.
I am pursuing M.tech from NIT Agartala(2017-2019). This is my 3rd semester partial project where i have successfully implemented the design of low voltage swing inverter. In the 4th semester i would be designing ring oscillator by connecting odd number of this inverter design in cascade.
I was able to complete this under the supervision of my respected guide Bidyut kumar .
Hope this presentation helps you to some extent.
Thank you.
Please do comment me if you have any doubts/ query/ or suggestions.
Study of vco_Voltage controlled OscillatorNeha Mannewar
Voltage controlled Oscillator,Voltage controlled oscillator is a type of oscillator where the frequency of the output oscillations can be varied by varying the amplitude of an input voltage signal.Voltage controlled oscillators are commonly used in frequency (FM), pulse (PM) modulators and phase locked loops (PLL). Another application of the voltage controlled oscillator is the variable frequency signal generator itself.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Using Chebyshev filter design, there are two sub groups,
Type-I Chebyshev Filter
Type-II Chebyshev Filter
The major difference between butterworth and chebyshev filter is that the poles of butterworth filter lie on the circle while the poles of chebyshev filter lie on ellipse.
I have prepared it to create an understanding of delay modeling in VLSI.
Regards,
Vishal Sharma
Doctoral Research Scholar,
IIT Indore
vishalfzd@gmail.com
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
Using Chebyshev filter design, there are two sub groups,
Type-I Chebyshev Filter
Type-II Chebyshev Filter
The major difference between butterworth and chebyshev filter is that the poles of butterworth filter lie on the circle while the poles of chebyshev filter lie on ellipse.
I have prepared it to create an understanding of delay modeling in VLSI.
Regards,
Vishal Sharma
Doctoral Research Scholar,
IIT Indore
vishalfzd@gmail.com
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
SEC uses PTFE for our customer's Radio Frequency Microwave High Bandwidth applications. PTFE hybrids utilize Teflon in the dielectric material of the printed circuit board. Often synthesized with other high speed materials, our PTFE hybrid boards for RFMW incorporate the use of ceramic and other high-speed resin systems.
c[Nemko]us - il Marchio Nemko per Canada e Nord America Nemko Italy
Hai intenzione di vendere i tuoi prodotti in Nord America? Nemko può supportarti durante l’intero processo di certificazione Americana / Canadese per il tuo dispositivo; dal testing in accordo alle norme/standard UL (USA) e CSA (Canada) fino all’ottenimento del certificato c[Nemko]us rilasciato dai nostri laboratori NRTL (National Recognized Testing Lab) e SCC (Standard Council of Canada).
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Design and performance analysis of low phase noise LC-voltage controlled osci...TELKOMNIKA JOURNAL
Voltage controlled oscillator (VCO) offers the radio frequency (RF) system designer a freedom to select the required frequency. Today’s wireless communication system imposes a very stringent requirement in terms of phase noise generated in VCO. This study presents an inductive source degeneration technique to improve the phase noise performance of the inductance-capacitance (LC)-VCO. Double cross-coupled topology has been chosen for the proposed VCO. The post layout simulations with the parasitic resistance, inductance, capacitance (RLC) extracted view is carried out with united microelectronics corporations (UMC) 0.18 µm process by spectre simulator of cadence tools. The proposed VCO provides a phase noise
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Biological screening of herbal drugs: Introduction and Need for
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June 3, 2024 Anti-Semitism Letter Sent to MIT President Kornbluth and MIT Cor...Levi Shapiro
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Dear Dr. Kornbluth and Mr. Gorenberg,
The US House of Representatives is deeply concerned by ongoing and pervasive acts of antisemitic
harassment and intimidation at the Massachusetts Institute of Technology (MIT). Failing to act decisively to ensure a safe learning environment for all students would be a grave dereliction of your responsibilities as President of MIT and Chair of the MIT Corporation.
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design and analysis of voltage controlled oscillator
1. DESIGN OF VOLTAGE
CONTROLLED OSCILLATOR
(LOW POWER CONSUMPTION AND LOW PHASE NOISE)
1
Group No.28 Supervised By-
Saurabh Kumar Mr.Navaid Zafar Rizvi
Vaibhav Jindal
Sharad Sharma
2. CONTENT
• Motivation.
• Introduction.
• Design of VCO.
• Basic parameters of VCO.
• Base Paper.
• Objective.
• Tool Used.
• Design Implemented.
• Results Achieved.
• Future Work & Time Plan.
• References. 2
3. 3
MOTIVATION
• Now a days communication is most necessary thing in
the world.
• Our aim is to make communication device of low
cost, less power consuming and Noise free.
• As Voltage Controlled Oscillator is used on both ends
of Communication.
• Or, we are trying to design a Voltage controlled
Oscillator which Consumed less power and having a
low phase noise
4. 4
INTRODUCTION
• A voltage controlled oscillator is a device that
provides a varying output signal whose frequency
can be adjusted over the range controlled by D.C.
voltage
Voltage Controlled
Oscillator
Vcont ωout
5. Specifications of Ideal Voltage Controlled Oscillator
1. VCO is of Low Noise.
2. Low Power Consumption.
3. High Packing Density.
4. High Frequency.
5. Wide tuning range.
5
VOLTAGE CONTROLLED OSCILLATOR
6. • Noise is injected into an oscillator will disturb both
the amplitude and frequency of oscillation.
• Amplitude noise is usually unimportant but Phase
noise, on the other hand, is essentially a random
deviation in frequency which can also be viewed as a
random variation in the zero crossing points of the
time-dependent oscillator waveform.
.
6
OSCILLATOR PHASE NOISE
7. 7
• Ring Oscillator Topology
• Relaxation Oscillator Topology
• Advantages-
Easy to fabricate
Low power
Small dice area occupancy
Wide tuning range.
• Disadvantage-
As frequency increases phase
noise performance degrades.
• LC Tank Oscillator Topology
• Crystal Oscillator Topology
• Advantages-
Low phase noise performance at
high frequency.
• Disadvantage-
Not suitable in fabrication
High power consumption
Small tuning range
Wave form Oscillators Resonant Oscillators
DIFFERENT OSCILLATORS DESIGN
8. • In this Topology oscillation frequency is decided by
L and C used in tank circuit of oscillator.
• Oscillation Frequency fosc =
• Only Inductor and Capacitor value has to vary
oscillation frequency.
• It is not easy to vary the value of L in monolithic
inductor, but we can change C by using Voltage
dependent capacitor (varactors).
8
LC OSCILLATOR TANK TOPOLOGY
9. • “Layout Design of LC VCO with Current Mirror Using 0.18
μm Technology”
• Namrata Prasad and Radheshyam Gamad
• Department of Electronics & Instrumentation Engineering, Shri
G. S. Institute of Technology and Science, Indore, India.
• Presented in Scientific Research Journal on Wireless
Engineering and Technology, in 2011.
• This paper presents a new design of complementary metal oxide
semiconductor voltage controlled oscillator (CMOS VCO) for
improve tuning range and phase noise with low power
consumption. 9
BASE PAPER
10. Our objective is to implement our Base paper
first in 180nm technology and then in 45nm
technology, and to achieve results better than our
base paper i.e. lower phase noise. We will
accomplish this task by designing an efficient
layout which requires less metal contacts.
10
OBJECTIVE
11. • Cadence Virtuoso.
• It is a Circuit simulator tool which provides capabilities of
designing the circuit, testing of circuit, designing of
layout and its verification.
• It has a feature named Analog Design Environment
(ADE).
• It also support tools like ASSURA, CALIBAR, ICE and
with the help of these tools we can have different checks
on our schematic like DRC, LVS.
11
TOOL USED
12. 12
VCO DESIGN STEPS IN TOOL
• According to designing parameters add a predefine
library(gpdk180& gpdk45) to project
• Design a schematic
Made a symbol for schematic.
• Testing and Verification
Draw a test circuit schematic.
Simulation
Analysis of Phase noise
• Layout Design
Testing and verification
13. • Easy to learn and enter data.
• Simulation set-ups can be reused.
• Quick analysis of multiple simulation data.
• Cross probing support for both schematics and layouts.
• Multiple measurement syntaxes supported.
• Batch scripting waveform display.
• Supports multiple Y-axes, strip plots, and Smith Charts.
• Built-in waveform calculator.
13
FEATURES OF VIRTUOSO
14. • Design aims at minimizing the phase noise of oscillator
circuit.
• Circuit is a combination of both cross coupled VCO and
balanced VCO.
• Due to the combination of two configuration and a LC tank
circuit it produces lower phase noise.
• This configuration also helps in reducing the chip size.
• Power consumption is minimized by using two different
current mirrors.
14
VOLTAGE CONTROLLED OSCILLATOR DESIGN
15. 15
VOLTAGE CONTROLLED OSCILLATOR DESIGN
• In first VCO Schematic-
Using Current Source
Tail has large Capacitance
• In Second VCO Schematic-
Using NMOS
Tail Current Source has a
noise at 2ω0
• In Third VCO Schematic-
Using Current Mirror
No large Capacitance
21. 21
SIMULATION RESULTS COMPARE WITH BASE PAPER
Parameters Namrata Prasad et al Proposed VCO
Results
General VCO
(Without current
mirror)
Propose VCO
(With current
mirror)
(VCO with
Current
Mirror)
Operating Voltage 2V 2V 2V
Technology(CMOS) 0.18um 0.18um 0.18um
Power Consumption 12.72mW 7.40mW 4.7mW
Operating Frequency 3.3GHz 3.3GHz 3.3GHz
Phase Noise (dBc/Hz) 63.7 at 100MHz -155.78 at 100MHz -128 at 1MHz
Phase Margin 180 180 180
23. • Layout implementation of present 180nm circuit using
minimum possible metal contacts, which will help in
reducing power loss.
• Designing of schematic and test circuit of present
circuitry in 45nm technology and performing test
analyses.
• Layout implementation in 45nm technology.
• Performing Power and Noise analyses of the circuits.
23
FUTURE WORK
24. • Completion of 180nm design---> 1st week of April
• Completion of 45nm design ---> 3rd week of April
• Completion of final Analyses ---> 4th week of April
24
TIME PLAN
25. • Namrata Prasad and Radheshyam Gamad, “Layout
Design of LC VCO with Current Mirror Using 0.18 μm
Technology”, Scientific Research Journal on Wireless
Engineering and Technology, 2011.
• N. Prasad, R. S. Gamad and C. B. Kushwah, “Design of a
2.2 - 4.0 GHz Low Phase Noise and Low Power LC
VCO,” International Journal of Computer and
Network Security, 2009.
• B. Razavi, “Deign of Analog Complementary MOS
Integrated Circuits, Edition 3” Tata McGraw-
Hill, Delhi, 2002.
• P. Dudulwar, K. Shah, H. Le and J. Singh, “Design and
Analysis of Low Power Low Phase Noise VCO,” 13th
IEEE International Conference on Mixed Design of
Integrated Circuits and Systems,2006.
25
REFRENCES
Reversed pn junction can be served as varactor and voltage dependent is expressed as equationdepend on Co zero bias value,VR reversed bias voltage,built in potential