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Layout design on MICROWIND
The document discusses the VLSI lab and its goals of designing and simulating CMOS inverter circuits using CAD tools. It describes the necessary hardware, software, and foundry resources needed. The design steps are outlined as schematic creation, layout design, DRC checks, parasitic extraction, and post-layout simulation. A list of experiments is provided focusing on logic gates, flip flops, multiplexers, and sequential circuits. The document also discusses the Microwind tool for circuit layout and simulation and provides tutorials on MOS devices and design rules for the layout process.
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Layout design on MICROWIND
- 1. To generate layoutfor CMOS Inverter circuit and simulate it for verification.
- 2. VLSI Lab VLSI LABORATORY FRONT END DESIGN (CAD) BACKEND DESIGN (CAD) TECHNOLOGY (TCAD)
- 3. Proper hardware Proper software Foundryor link up with some fab lab Test facility Purpose
- 4. DESIGN STEPS • SCHEMATIC •LAYOUT DESIGN • DRC • LAYOUT Vs SCHEMATIC • PARASITIC EXTRACTION • POST LAYOUT SIMULTION
- 5. List of Experiments 1.To generate layout for CMOS Inverter circuit and simulate it for verification. 2. To prepare layout for given logic function and verify it with simulations. 3. Introduction to programmable devices (FPGA, CPLD), Hardware Description Language (VHDL), and the use programming tool. 4. Implementation of basic logic gates and its testing. 5. Implementation of adder circuits and its testing. 6. Implementation of J-K and D Flip Flops and its testing. 7. Implementation 4 to 1 multiplexer and its testing. 8. Implementation of 3 to 8 decoder and its testing. 9. Implementation of sequential adder and its testing. 10. Implementation of BCD counter and its testing. 11. Simulation of CMOS Inverter using SPICE for transfer characteristic. 12. Simulation and verification of two input CMOS NOR gate using SPICE. 13. Introduction to Block Diagram Mathod 14. Design of digital Logic using block diagram.
- 6. Project • Mini Project:VHDL/Verilog based mini project with emphasis on design and implementation into the group of maximum 3 students.
- 7.
- 8. Microwind • Microwind isa tool for designing and simulating circuits at layout level. The tool features full editing facilities (copy, cut, past, duplicate, move), various views (MOS characteristics, 2D cross section, 3D process viewer), and an analog simulator
- 9. Tools from Microwind •Microwind • DSCH • Microwind3 Editor • Microwind 2D viewer • Microwind 3D viewer • Microwind analog simulator • Microwind tutorial on MOS devices • View of Silicon Atoms
- 10. Getting Microwind • Goto the website http://www.microwind.net/document • Download the freeware version of the microwind • Unzip the files in a Folder
- 11.
- 12. INTRODUCTION THE TOOL User-friendlyand intuitive design tool for educational use. The student draws the masks of the circuit layout and performs analog simulation The tool displays the layout in 2D, static 3D and animated 3D Editing window One dot on the grid is 5 lambda, or 0.175 µm Editing icons Access to simulation 2D, 3D views Simulation properties Layout library Active technology Palette of layers Ion current Voltage cursors List of model parameters for BSIM4 Memory effect due to source capacitance Threshold voltage effect
- 13. Our Approach 1. 2. 3. 4. MOS DEVICE Traditionalteaching : in-depth explanation of the potentials, fields, threshold voltage, and eventually the expression of the current Ids Our approach : step-by-step illustration of the most important relationships between layout and performance. 1. Design of the MOS 2. I/V Simulation 3. 2D view 4. Time domain analysis
- 14. Feature Size • Chipsare specified with set of masks • Minimum dimensions of masks determine transistor size (and hence speed, cost, and power) • Feature size f = distance between source and drain • Set by minimum width of polysilicon • Feature size improves 30% every 3 years or so • Normalize for feature size when describing design Rules • E.g. λ = 0.090 μm in 0.180 μm process
- 15. Layout design rules: Forcomplex processes, it becomes difficult to understand the intricacies of the fabrication process and interpret different photo masks. They act as interface between the circuit designer and the process engineer.
- 16. Editing Icons Accessto Simulation 2D 3D Views Layout Library Simulation Properties Palette of Layers Active Layers Current Technology Work Area One dot on the grid is 5 lambda or 0.30 µm Menu Command Microwind Environment
- 17. Microwind Layout using VerilogCode • Design Schematic in DSCH and eport Verilog code for Circuit. • Import Verilog file (.v) in microwind. • This process is possible only for digital.(As digital components are possible in Verilog)
- 18. Run on DSCH SaveFile Select Foundry Make Verilog File Import Verilog File LayoutVerilog File Select Foundry in Microwind DSCH to Microwind using VERILOG
- 19. Design Rules N- Well r101Minimum width 12λ r102 Between wells 12 λ r110 Minimum well Area 144 λ2 r 102r 101 N - Well
- 20. r201 Minimum N+and P+ diffusion width 4λ r 201 r 201 N - Well P+ Diff N+ Diff
- 21. r202 Between twoP+ and N+ diffusions 4λ N - Well P+ Diff N+ Diff r 202 r 202
- 22. r203 Extra N-wellafter P+ diffusion 6λ N - Well P+ Diff N+ Diff r 203 r 203
- 23. r204 Between N+diffusion and n-well 6 λ r 204 N - Well P+ Diff N+ Diff
- 24. r210 Minimum diffusionarea 16λ2 r 210 r 210 N - Well P+ Diff N+ Diff
- 25. r301 Polysilicon Width2λ N - Well P+ Diff N+ Diff Polysilicon r 301 r 301 Polysilicon
- 26. r302 Polysilicon gateon Diffusion 2λ N - Well P+ Diff N+ Diff Polysilicon r 302 r 302 Polysilicon
- 27. r307 Extra Polysiliconsurrounding Diffusion 3λ N - Well P+ Diff N+ Diff Polysilicon r 307 r 307 r 307 r 307 Polysilicon
- 28. r304 Between twoPolysilicon boxes 3λ N - Well P+ Diff N+ Diff Polysilicon Polysilicon r 304 r 304
- 29. r307 Diffusion afterPolysilicon 4λ N - Well P+ Diff N+ Diff Polysilicon Polysilicon r 307 r 307 r 307 r 307
- 30. r401 Contact width2λ Contact Polysilicon Contact Metal/Polysilicon Contact r 401
- 31. r404 Extra Polysurrounding contact 1λ Contact Polysilicon Contact Metal/Polysilicon Contact r 404 r 404
- 32. r405 Extra metalsurrounding contact 1λ Contact Polysilicon Contact Metal/Polysilicon Contact r 405 r 405
- 33. N - Well P+ Diff N+Diff Polysilicon Polysilicon r403 Extra diffusion surrounding contact 1λ r 403 r 403
- 34. Metal 1 Metal 2 Metal3 Metal 4 Metal 5 Metal 6 r 501 r 501 r501 Between two Metals 4λ
- 35. r510 Minimum Metalarea 16λ2 r 510 r 510 r 510r 510 r 510 r 510 Metal 1 Metal 2 Metal 3 Metal 4 Metal 5 Metal 6
- 36. Step 1: SelectFoundary
- 37. Step 2: SelectFoundary
- 38. Step 3: n+Diffussion
- 39.
- 40. Step 5: n+diffand Metal Contact
- 41. • This CompletesnMOS design • Now go for pMOS Design, and the first need is to construct N Well
- 42. Step 6: CreateN Well
- 43. Step 6: p+Diffusion
- 44.
- 45.
- 46. Final Connections • pMOSCompleted • Now Interconnection of pMOS and nMOS to complete inverter • Connect Source of pMOS to VDD and Source of nMOS to VSS. • Short the Drain of both pMOS and nMOS.
- 47.
- 48.
- 49. Assign Source • AssignSignal (Clock) to Gate Terminal • Add Visible node at Output
- 50.
- 51.
- 52.
- 53. For Analog Circuits (R,L and C Components) if drain and gate is shorted then MOS will behave as a diode connected load and it will never go to triode region and can be used as resistive load offering a resistance equal to 1/gm. if drain and source is shorted then MOS capacitor in which SiO2 will behave as insulator.
- 55. Direct layout designof Analog Circuits…
- 56. Thanks Give Your Feedbacksat: www.amitdegada.weebly.com/blog.html
Editor's Notes
- #3 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #4 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #5 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #6 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #7 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #8 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #9 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #10 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #11 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #12 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #13 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #14 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #39 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #40 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #41 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #42 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #43 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #44 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #45 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #46 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #47 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #48 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #49 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #50 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #51 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #52 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #53 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.
- #54 When Drain and gate are short mosfet is in saturation.
- #57 References I am grateful for the contributions from SEMATECH, the Austin Community College, and MKS Instruments. For further reading, I especially recommend the reference from Scientific American.