This document discusses advanced MOSFET architectures and their advantages over traditional bulk MOSFETs. It describes issues with bulk MOSFETs like short channel effects and proposes solutions like multi-gate architectures and high-k dielectrics. Specifically, it examines double-gate MOSFETs, tri-gate MOSFETs, gate-all-around MOSFETs, SOI MOSFETs, FinFETs, and tunnel FETs, outlining their characteristics and benefits over other designs for low power electronics applications.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Threshold Voltage & Channel Length ModulationBulbul Brahma
Design and Technology of Electronic Devices:
Review of microelectronic devices, introduction to MOS technology and related devices.
MOS transistor theory, scaling theory related to MOS circuits, short channel effect and its
consequences, narrow width effect, FN tunnelling, Double gate MOSFET, Cylindrical
MOSFET, Basic concept of CMOS circuits and logic design. Circuit characterization and
performance estimation, important issues in real devices. PE logic, Domino logic, Pseudo
N-MOS logic-dynamic CMOS and Clocking, layout design and stick diagram, CMOS
analog circuit design, CMOS design methods. Introduction to SOI, Multi layer circuit
design and 3D integration. CMOS processing technology: Crystal grown and Epitaxy, Film
formation, Lithography and Etching, Impurity doping, Integrated Devices.
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Threshold Voltage & Channel Length ModulationBulbul Brahma
Design and Technology of Electronic Devices:
Review of microelectronic devices, introduction to MOS technology and related devices.
MOS transistor theory, scaling theory related to MOS circuits, short channel effect and its
consequences, narrow width effect, FN tunnelling, Double gate MOSFET, Cylindrical
MOSFET, Basic concept of CMOS circuits and logic design. Circuit characterization and
performance estimation, important issues in real devices. PE logic, Domino logic, Pseudo
N-MOS logic-dynamic CMOS and Clocking, layout design and stick diagram, CMOS
analog circuit design, CMOS design methods. Introduction to SOI, Multi layer circuit
design and 3D integration. CMOS processing technology: Crystal grown and Epitaxy, Film
formation, Lithography and Etching, Impurity doping, Integrated Devices.
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
Mike Novak
Tellabs
This session will focus on the underlying GPON (Gigabit Passive Optical Network) and All-Secure PON infrastructure, the implications to the Layer-1 design, using Armored Interlocking Fiber to deploy NIPR/SIPR data and voice requirements.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Current Comparison Domino based CHSK Domino Logic Technique for Rapid Progres...IJECEIAES
The proposed domino logic is developed with the combination of Current Comparison Domino (CCD) logic and Conditional High Speed Keeper (CHSK) domino logic. In order to improve the performance metrics like power, delay and noise immunity, the redesign of CHSK is proposed with the CCD. The performance improvement is based on the parasitic capacitance, which reduces on the dynamic node for robust and rapid process of the circuit. The proposed domino logic is designed with keeper and without keeper to measure the performance metrics of the circuit. The outcomes of the proposed domino logic are better when compared to the existing domino logic circuits. The simulation of the proposed CHSK based on the CCD logic circuit is carried out in Cadence Virtuoso tool.
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems at lower node technology. SOI and FinFET technologies are promising candidates in this area.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
With integrated circuit scales in the 22-nm regime, conventional planar MOSFETs have approached the limit of their potential performance. To overcome short channel effects 'SCEs' that appears for deeply scaled MOSFETs beyond 10nm technology node many new device structures and channel materials have been proposed. Among these devices such as Gate-all-around FET. Recentely, junctionless GAA MOSFETs JL-GAA MOSFETs have attracted much attention since the junctionless MOSFET has been presented. In this paper, DC characteristics of an n-type JL-GAA MOSFET are presented using a 3-D quantum transport model. This new generation device is conceived with the same doping concentration level in its channel source/drain allowing to reduce fabrication complexity. The performance of our 3D JL-GAA structure with a 20nm gate length and a rectangular cross section have been obtained using SILVACO TCAD tools allowing also to study short channel effects. Our device reveals a favorable on/off current ratio and better SCE characteristics compared to an inversionmode GAA transistor. Our device reveals a threshold voltage of 0.55 V, a sub-threshold slope of 63mV / decade which approaches the ideal value, an Ion/Ioff ratio of 10e + 10 value and a drain induced barrier lowring (DIBL) value of 98mV/V.
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TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFETIDES Editor
Scaling of metal-oxide-semiconductor transistors
to smaller dimensions has been a key driving force in the IC
industry. This work analysis the gate leakage current behavior
of nano scale MOSFET based on TCAD simulation. The
Sentaurus Simulator simulates the high-k gate stack structure
of N-MOSFET for analysis purpose. The impact of interfacial
oxide thickness on the gate tunneling current has been
investigated as a function of gate voltages for a given equivalent
oxide thickness (EOT) of 1.0 nm. It was reported in the results
that interfacial oxide thickness plays an important role in
reducing the gate leakage current. It is also observed that high-
k stack gated MOSFET exhibits improved performance in term
of Off current and DIBL
Courier management system project report.pdfKamal Acharya
It is now-a-days very important for the people to send or receive articles like imported furniture, electronic items, gifts, business goods and the like. People depend vastly on different transport systems which mostly use the manual way of receiving and delivering the articles. There is no way to track the articles till they are received and there is no way to let the customer know what happened in transit, once he booked some articles. In such a situation, we need a system which completely computerizes the cargo activities including time to time tracking of the articles sent. This need is fulfilled by Courier Management System software which is online software for the cargo management people that enables them to receive the goods from a source and send them to a required destination and track their status from time to time.
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Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
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2. Present problems in Bulk MOSFET
Excessive short-channel effects
Minimum channel length becomes 50 nm approx., can’t be reduced further
Lower threshold for Gate oxide scaling
Lower threshold for Supply voltage
Discrete dopant fluctuations
substrate
S D
channel
Dielectric
G
substrate
S D
19-06-2021 Arpan Deyasi, RCCIIT, India 2
3. Possible Solutions
Better gate control to nullify the short channel effect
Incorporation of high-K dielectric to reduce tunneling effect, which
simultaneously helps to reduce dielectric thickness
Use of semiconductors with higher carrier mobility as substrate
material
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4. Better gate control
Novel architectures are proposed for the purpose
Better scalability and lower sub threshold current
Multi-gate
architecture
Gate
wrapping
SOI with
multi-gate
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7. Double Gate MOSFET
Front and back gates control carrier flow in channel region
Channel length is scalable upto 30 nm
Ultrathin channel works as quantum confined region
Lower subthreshold slope
Lower gate leakage
ION/IOFF ratio is better compared with single gate MOSFET
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8. Drawbacks of Double Gate MOSFET
Electric field between body and drain increases band-to-band tunneling probability
Small channel length provides reduced potential width, which leads to quantum
mechanical tunneling between source and drain
Owing to lower potential barrier, thermionic emission takes place
Quantum confinement effect in ultrathin body region
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10. Tri-Gate MOSFET
Conducting channel forms across all three sides, two on
sides, one at top
Additional control enables maximum possible current flow at
ON state, makes close to zero when OFF state, and helps the
device to switch as quick as possible between the two states
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11. Advantages of Tri-Gate MOSFET
Performance gain at lower operating voltage
Low power operation speaks for power reduction
Higher drive current
Improved switching characteristics
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12. Disadvantages of Tri-Gate MOSFET
Conventional fabrication technology makes hindrance for non-planar
growth
Fabrication of semiconductor ‘fin’ of nano-dimension
Fabrication of matched gates on multiple sides of ‘fin’
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14. Quadruple-Gate MOSFET
Better gate control ……………
Problem is related to fabrication ……………
Therefore, alternative architecture is considered having
same effect ……………
Gives birth to Gate-All-Around Architecture
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16. 19-06-2021 Arpan Deyasi, RCCIIT, India 16
Advantages of GAA MOSFET
Better gate controllability as gate is all around the channel
Leakage current is almost negligible
Short channel effect is negligible
Higher drain current
Lower Subthreshold slope
17. 19-06-2021 Arpan Deyasi, RCCIIT, India 17
SOI Technology
Si channel layer is grown on oxide layer
Negligible junction capacitance
Low leakage current
Electrical active layer is isolated from bulk layer
Reduced parasitic effect
Superior electrostatic control
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SOI MOSFET
MOSFET device in which a semiconductor layer is formed on an
insulator layer which may be a buried oxide (BOX) layer formed in a
semiconductor substrate
Why it is on demand?
Allows continuous miniaturization of MOSFET
Low parasitic resistances and capacitances
Compatible with existing fabrication techniques
Providing higher current densities
19. 19-06-2021 Arpan Deyasi, RCCIIT, India 19
SOI MOSFET structure
n+ n+
gate
source drain
gate
dielectric
p-body
n+ n+
gate
source drain
p-body
dielectric
gate
p
BOX
20. 19-06-2021 Arpan Deyasi, RCCIIT, India 20
Different SOI MOSFET
Partially depleted MOSFET Fully depleted MOSFET
Thickness of p-region (sandwiched
between gate oxide and buried oxide) is
greater than bulk depletion width
Si film thickness is less than bulk
depletion width
KINK effect is observed No such effect is observed
Comparatively slower Comparatively faster
Behaves like bulk MOSFET Doesn’t behave like bulk MOSFET
Used in analog circuit Used in low power applications
Drawback: packaging scalability Drawback: complex fabrication process
22. 19-06-2021 Arpan Deyasi, RCCIIT, India 22
Advantages of SOI MOSFET
Lower parasitic capacitance due to isolation from semiconductor substrate,
which improves power conservation
Resistance to latch-up due to complete isolation of n-well and p-well structures
Lower leakage currents
Reduced temperature dependency
Steeper sub-threshold swing
23. 19-06-2021 Arpan Deyasi, RCCIIT, India 23
Disadvantages of SOI MOSFET
Kink effect
Self-heating effect
Floating body effect can get freely charged/ discharged due to transients
which affects threshold voltage
25. 19-06-2021 Arpan Deyasi, RCCIIT, India 25
FinFET characteristics
Non-planar DGMOSFET built on SOI substrate
Conducting channel is wrapped up by Si thin ‘fin’ which forms body of the device
Thickness of ‘fin’ determines effective channel length of device
It is basically vertical Double Gate MOSFET
26. 19-06-2021 Arpan Deyasi, RCCIIT, India 26
Advantages of FinFET
Suppressed short channel effect
Higher driving current
Higher technological maturity than planar DGMOSFET
More compact in terms of architecture
Lower cost
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Disadvantages of FinFET
Reduced mobility for electrons
Higher source and drain resistances
Poor reliability
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Direction towards low power electronics
Lower subthreshold swing Higher speed of operation
Steeper subthreshold slope
Promising candidate
for low power electronics
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Tunnel FET
Drain
Gate
substrate
BOX
p+ n+
i
Source
p-TFET
Drain
Gate
substrate
BOX
n+ p+
n
Source
n-TFET
30. 19-06-2021 Arpan Deyasi, RCCIIT, India 30
Tunnel FET characteristics
Uses gate-controlled p-i-n structure with carrier with carriers tunneling
through barrier
Interband tunneling occurs in heavily doped p+ - n+ junctions
Operation is based on principle of band-to-band tunneling
Switch between OFF and ON states at low voltages
Less amount of current compared with MOSFET
31. 19-06-2021 Arpan Deyasi, RCCIIT, India 31
Tunnel FET characteristics
Very low leakage current at OFF state
Steeper subthreshold slope
Higher ON-to-OFF current ratio
33. 19-06-2021 Arpan Deyasi, RCCIIT, India 33
Electrical characteristics of TFET
OFF state: wider potential barrier
restricts tunneling
ON state: gate voltage exceeds threshold
voltage which reduces potential
barrier width, and therefore
tunneling starts
Channel valence band lifted above source conduction band which makes tunneling possible
Only carriers in energy window ΔΦ can tunnel from source to channel
34. 19-06-2021 Arpan Deyasi, RCCIIT, India 34
Advantages of Tunnel FET
Subthreshold slope lower than 60 mV/decade
Highest possible ON current and lowest possible OFF current
Higher intrinsic voltage gain and higher maximum oscillation frequency
at low current levels compared with FinFET
35. 19-06-2021 Arpan Deyasi, RCCIIT, India 35
Disadvantages of Tunnel FET
Magnitude of current is smaller than that of MOSFET