The document summarizes the simulation of a 10nm double gate MOSFET using the Visual TCAD tool. Key points:
1) A 10nm double gate MOSFET structure was designed in Visual TCAD with silicon substrate, aluminum source/drain, and polysilicon gates separated by silicon dioxide.
2) Parameters like gate length, mesh sizes, and doping concentrations were defined for the simulation.
3) Short channel effects like DIBL and subthreshold slope were examined, as continuous scaling has degraded MOSFET characteristics and increased these effects.
4) The double gate structure was proposed to improve gate coupling and reduce short channel effects compared to conventional MOSFETs.