This document provides an overview of FinFET technology. It defines FinFET as a non-planar, double gate transistor built on an SOI substrate, where the conducting channel is wrapped by a thin silicon fin. Due to its dual gate structure, FinFET has better control over short channel effects compared to planar MOSFETs. It also allows for higher integration density than planar MOSFETs. Additionally, FinFET fabrication is relatively simple. The document discusses FinFET structure, recent developments, fabrication mechanisms, advantages/limitations, and applications.