P R E S E N T E D B Y
N I H A R I K A G O U R
SGSITS INDORE
Presentation
on
MOS Capacitor
MOS Capacitor
 MOS Capacitor is a two terminal MOS device used to
store the charge in integrated circuit .
MOS Energy Band diagram
 qsi Work Function Energy of Semiconductor
 qm Work Function Energy of metal
 qXsio2 Electron affinity of SiO2
 qXsi Electron affinity of Si
 qF = EFI – EFP = kT ln(p/ni)=kT ln(N A /ni)
 It represent strength of work function
F=Fermi potential
Assumptions
1.Oxide = SiO2 a near-perfect insulator.
2. Assume zero charge in the oxide, electric field is
constant and potential is linear in the oxide.
3. n+ polysilicon has a potential which is the
maximum possible in silicon
4.Zero work function difference between metal &
semiconductor
Mode of Operation
 Flat Band
 Accumulation
 Depletion
 Inversion
 Strong Inversion
Flat Band
Flat mode of operation
 When no potential is applied there is no movement
of electron
 So distribution of dopant is uniform and energy band
has a flat band
Thus this mode of operation is known as flat mode of
operation
Accumulation
• W H E N N E G A T I V E C H A R G E I S A P P L I E D T O P T Y P E
D U E T O E L E C T R I C F I E L D A T G A T E E N D P O S T I V E
C H A R G E I S D E V E L O P E D
• D U E T O W H I C H A T O X I D E I N T E R F A C E N E G A T I V E
C H A R G E I S A C C U M U L A T E D
• T H U S T H I S M O D E O F O P E R A T I O N I S C A L L E D
A C C U M U L A T I O N
Accumulation
Accumulation
Depletion
W H E N P O S I T I V E G A T E V O L T A G E I S A P P L I E D ,
N E G A T I V E C H A R G E I S D E V E L O P E D A T G A T E E N D
D U E T O W H I C H A T I N T E F A C E S I D E P T Y P E I S
D E P L E T E D O F P O S I T I V E C H A R G E
T H U S T H I S M O D E O F O P E R A T I O N I S C A L L E D
D E P L E T I O N M O D E O F O P E R A T I O N
Depletion mode
Depletion
Inversion
1 . W H E N P O S I T I V E V O L T A G E I S F U R T H E R
I N C R E A S E D
2 . D E P L E T I O N O F P O S I T I V E C H A R G E I N C R E A S E S
A N D B E C O M E A C C U M U L A T I O N O F N E G A T I V E
C H A R G E I N P T Y P E
T H I S I N V E R S I O N O F C H A R G E D U E T O H I G H E R
P O T E N T I A L I S C A L L E D I N V E R S I O N M O D E .
Inversion mode of operation
• T H I S P O T E N T I A L A G A I N I F I N C R E A S E S L E A D
T O S T R O N G I N V E R S I O N
• T H I S S T A T E F E R M I L E V E L W H I C H I N P T Y P E
S H O U L D B E N E A R T O V A L E N C E B A N D
D U E T O P O S I T I V E C H A R G E I S N O W B E C O M E
C L O S E T O C O N D U C T I O N
T H U S A T I N T E R F A C E E N D I T S T A R T B E H A V I N G
L I K E N T Y P E
Strong inversion
Summary
MOS Capacitor.pptx

MOS Capacitor.pptx

  • 1.
    P R ES E N T E D B Y N I H A R I K A G O U R SGSITS INDORE Presentation on MOS Capacitor
  • 2.
    MOS Capacitor  MOSCapacitor is a two terminal MOS device used to store the charge in integrated circuit .
  • 3.
  • 4.
     qsi WorkFunction Energy of Semiconductor  qm Work Function Energy of metal  qXsio2 Electron affinity of SiO2  qXsi Electron affinity of Si  qF = EFI – EFP = kT ln(p/ni)=kT ln(N A /ni)  It represent strength of work function F=Fermi potential
  • 5.
    Assumptions 1.Oxide = SiO2a near-perfect insulator. 2. Assume zero charge in the oxide, electric field is constant and potential is linear in the oxide. 3. n+ polysilicon has a potential which is the maximum possible in silicon 4.Zero work function difference between metal & semiconductor
  • 6.
    Mode of Operation Flat Band  Accumulation  Depletion  Inversion  Strong Inversion
  • 7.
  • 8.
    Flat mode ofoperation  When no potential is applied there is no movement of electron  So distribution of dopant is uniform and energy band has a flat band Thus this mode of operation is known as flat mode of operation
  • 10.
  • 11.
    • W HE N N E G A T I V E C H A R G E I S A P P L I E D T O P T Y P E D U E T O E L E C T R I C F I E L D A T G A T E E N D P O S T I V E C H A R G E I S D E V E L O P E D • D U E T O W H I C H A T O X I D E I N T E R F A C E N E G A T I V E C H A R G E I S A C C U M U L A T E D • T H U S T H I S M O D E O F O P E R A T I O N I S C A L L E D A C C U M U L A T I O N Accumulation
  • 12.
  • 13.
  • 14.
    W H EN P O S I T I V E G A T E V O L T A G E I S A P P L I E D , N E G A T I V E C H A R G E I S D E V E L O P E D A T G A T E E N D D U E T O W H I C H A T I N T E F A C E S I D E P T Y P E I S D E P L E T E D O F P O S I T I V E C H A R G E T H U S T H I S M O D E O F O P E R A T I O N I S C A L L E D D E P L E T I O N M O D E O F O P E R A T I O N Depletion mode
  • 15.
  • 17.
  • 18.
    1 . WH E N P O S I T I V E V O L T A G E I S F U R T H E R I N C R E A S E D 2 . D E P L E T I O N O F P O S I T I V E C H A R G E I N C R E A S E S A N D B E C O M E A C C U M U L A T I O N O F N E G A T I V E C H A R G E I N P T Y P E T H I S I N V E R S I O N O F C H A R G E D U E T O H I G H E R P O T E N T I A L I S C A L L E D I N V E R S I O N M O D E . Inversion mode of operation
  • 20.
    • T HI S P O T E N T I A L A G A I N I F I N C R E A S E S L E A D T O S T R O N G I N V E R S I O N • T H I S S T A T E F E R M I L E V E L W H I C H I N P T Y P E S H O U L D B E N E A R T O V A L E N C E B A N D D U E T O P O S I T I V E C H A R G E I S N O W B E C O M E C L O S E T O C O N D U C T I O N T H U S A T I N T E R F A C E E N D I T S T A R T B E H A V I N G L I K E N T Y P E Strong inversion
  • 21.