Ebers moll model
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Ebers Moll Model h parameter r parameter z parameter Forward Mode , Reverse Mode And Normal Mode Operation
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Field Effect Transistor ppt
The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
So this applied voltage generate the electric field within the device and by controlling these electric field we can control the flow of current through the device.
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2) The operation of n-channel and p-channel MOSFETs. In an n-channel MOSFET, applying a positive voltage to the gate creates an n-type inversion channel between the source and drain allowing current to flow.
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- The JFET characteristics show the drain current (ID) as a function of drain-source voltage (VDS) for different gate-source voltages (VGS). ID increases with VDS until reaching pinch-off, then becomes constant.
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The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
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1. A transistor is a semiconductor device with three terminals (emitter, base, collector) that can amplify or switch electronic signals and electrical power. It was invented in 1947 as a replacement for vacuum tubes.
2. There are two main types of transistors - NPN and PNP. In an NPN transistor, the base-emitter junction is forward biased, allowing current to flow from the emitter to the collector. The small base current controls a much larger collector current.
3. Transistors can be connected in common base, common emitter, or common collector configurations. The common emitter configuration provides both current and voltage gain and is widely used in amplifiers.
Chapter 4 bjt
The given circuit is a CB amplifier.
(a) The dc operating point or Q-point is midway between cutoff and saturation points.
Cutoff point: IC = 0, VCE = 10 V
Saturation point: IC = 2 mA, VCE = 0.2 V
Q-point: IC = 1 mA, VCE = 5 V
(b) Maximum unclipped signal is the distance between Q-point and either cutoff or saturation point.
Maximum peak-to-peak signal = Saturation point - Cutoff point
= 0.2 V - 10 V = 9.8 V
(c) For no clipping, the ac signal amplitude should be less than half of the maximum
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The document discusses the bipolar junction transistor (BJT). It describes how the BJT was invented in 1947 by scientists at Bell Labs. The BJT consists of three terminals - the emitter, base, and collector - and comes in two types, p-n-p and n-p-n. The document explains the basic operation and principles of both types of BJT, including how current flows when junctions are forward or reverse biased in different modes. It also provides examples of calculating currents given bias conditions and current gains. Finally, it summarizes the key current-voltage relationships and characteristics of BJTs in common base, common emitter, and common collector configurations.
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This document discusses different digital logic families and characteristics. It describes Resistor-Transistor Logic (RTL) which consists of resistors and transistors, with the emitters connected to ground and collectors tied through a resistor. Transistor-Transistor Logic (TTL) is also discussed, which depends solely on transistors. TTL uses multiple emitter transistors for inputs and a totem-pole output for high speed and low impedance. The document provides details on RTL and TTL gate operations.
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A MOSFET is a semiconductor device that can amplify or switch electronic signals. It has three terminals - drain, source, and gate. Depending on whether the semiconductor material between the drain and source is n-type or p-type, a MOSFET can be an n-channel or p-channel type. Applying a positive voltage to the gate of an n-channel MOSFET or a negative voltage to the gate of a p-channel MOSFET allows current to flow between the drain and source. MOSFETs are commonly used as switches in digital circuits like processors and as amplifiers in analog circuits. They are also used in memory devices, power supplies, and other electronic applications.
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A slide on Transistor and it's working principle for the course Research Methodology under International Islamic University Chittagong.
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This document provides an overview of analog to digital converters (ADCs). It discusses the basic process of converting a continuous analog signal to discrete digital values. It then describes several common types of ADCs - successive approximation ADCs, dual slope ADCs, flash ADCs, and pipeline ADCs. For each type, it provides details on how the conversion process works, as well as advantages and disadvantages. It explains key steps and components involved, such as sampling and holding, quantizing, encoding, comparators and resistors. The document serves to introduce the fundamental concept and major implementation techniques for analog to digital conversion.
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This document provides an overview of semiconductor diodes, including PN junction diodes. It discusses intrinsic and extrinsic semiconductors, doping to create N-type and P-type materials, the PN junction, depletion region and built-in voltage calculations. Forward and reverse bias characteristics are examined along with current equations. Energy band diagrams are presented for the PN junction under zero, forward and reverse bias. Other topics covered include drift and diffusion current densities, transition and diffusion capacitances, switching characteristics and breakdown mechanisms in PN junction diodes. Ratings for diodes such as maximum current and voltage are also defined.
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The bipolar junction transistor (BJT) is a three-layer semiconductor device made of alternating n-type and p-type materials, known as an npn or pnp transistor. BJTs can be used as amplifiers, switches, or in oscillators. In the common-base configuration, the base terminal is common to both the input and output and usually closest to ground potential. The emitter-base junction is forward biased while the collector-base junction is reversed biased. BJT characteristics include the input, output, active, cutoff, and saturation regions which influence the relationships between emitter, collector, and base currents and voltages.
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This presentation introduces bipolar junction transistors (BJTs). It discusses the two types of BJTs - NPN and PNP transistors, which differ based on whether holes or electrons are the majority carriers. The key components of a transistor - emitter, base, and collector - are defined. The presentation compares the three common transistor configurations - common base, common emitter, and common collector - and provides expressions for collector current in each. It also discusses transistor operation, characteristics, and applications such as amplification. Overall, the presentation provides a comprehensive overview of BJT fundamentals.
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2. There are two main types of transistors - NPN and PNP. In an NPN transistor, the base-emitter junction is forward biased, allowing current to flow from the emitter to the collector. The small base current controls a much larger collector current.
3. Transistors can be connected in common base, common emitter, or common collector configurations. The common emitter configuration provides both current and voltage gain and is widely used in amplifiers.
Chapter 4 bjt
The given circuit is a CB amplifier.
(a) The dc operating point or Q-point is midway between cutoff and saturation points.
Cutoff point: IC = 0, VCE = 10 V
Saturation point: IC = 2 mA, VCE = 0.2 V
Q-point: IC = 1 mA, VCE = 5 V
(b) Maximum unclipped signal is the distance between Q-point and either cutoff or saturation point.
Maximum peak-to-peak signal = Saturation point - Cutoff point
= 0.2 V - 10 V = 9.8 V
(c) For no clipping, the ac signal amplitude should be less than half of the maximum
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Potential difference (voltage) enables the flow of charge (current) through conductors. Voltage is measured in volts, current in amperes, and their relationship is defined by Ohm's law. Circuits allow current to flow in a closed path, and their basic components - resistors, capacitors, diodes, transistors - each control current in different ways. Integrated circuits combine many transistors to process electronic signals and power. Printed circuit boards provide a platform to connect these components via conductive pathways.
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This document provides an overview of electricity and electric circuits. It defines key concepts such as current, voltage, resistance, and different circuit arrangements. Some main points:
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- Circuits must be closed loops for current to flow. Components include batteries, wires, switches, and devices. Their symbols are used in circuit diagrams.
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Transistors are semiconductor devices that can amplify or switch electronic signals and digital currents. They were invented in 1947 by John Bardeen, Walter Brattain, and William Shockley at Bell Labs to replace unreliable vacuum tubes. Transistors have three terminals - the base, collector, and emitter - and come in NPN or PNP types depending on whether they use electrons or holes as majority carriers. Transistors can be used as switches when biased in cutoff or saturation regions, or as linear amplifiers when biased in the active region. Their current gain properties allow them to both amplify signals and function as basic building blocks in digital circuits.
Transistor
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Multistage amplifier 23
MULTISTAGE AMPLIFIERS
Definition: An amplifier formed by connecting several amplifiers in cascaded arrangement such that output of one amplifier becomes the input of other whose output becomes input of next and so on .
Each amplifier in this configuration is known as stage.
So several stages are connected to form multistage amplifier.
Working of multistage amplifier: Each amplifier connected perform the process of amplification
They convert their input signal into high amplified output signal.
Hence the output signal after passing through several amplifiers becomes highly amplified.
Each amplifier connected perform the process of amplification
They convert their input signal into high amplified output signal.
Hence the output signal after passing through several amplifiers becomes highly amplified.
Voltage gain: The overall voltage gain of multistage amplifier is product of voltage gain of individual amplifier.
If voltage is expressed in dB overall voltage gain is by the sum of voltage gain in dB of individual amplifier.
If we convert voltage gain into the db voltage gain then we use a relation.
Direct coupled multistage amplifier: A direct coupled amplifier is a type of amplifier in which two amplifier are connected in a such a way that one stage is coupled directly to the other without using any coupling or bypassing capacitor.
In this configuration dc collector voltage of first stage provides base bias to second stage means output of first stage becomes input of second stage.
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Ebers moll model
- 1. Electronics
- 2. *Ebers Moll Model *h parameter *r parameter *z parameter
- 4. Ebers MOLL Model For BJT • It consist of two diode (p-n junction) which are connected to back to back and the base is common to both diodes • In addition we have the two current sources these current sources gives the coupling between the two junctions
- 6. • These diode are not in insolation but are interdependent it means that the total current flowing in one diode it is influenced by the other • When the diode are in insolation then they are characterized by the normal diode equation
- 7. IF = forward current IR = reverse current IES = reverse saturation current for base emitter junction ICS = reverse saturation current for base collector junction VT = thermal voltage VBE = potential difference between the base and emitter junction VBC = potential difference between the base and collector junction
- 8. • When two junctions are combined to form a transistor the base region is shared by both • The idea of this model is that if u know about applied voltages between junction we should be able to evaluate the different currents • Now we find the 3 terminals current
- 10. Forward mode operation : • In the forward mode of operation αF of the emittor current reaches the collector This means that diode current passing through the base-emitter junction contributes to the current flowing through base-collector junction. αF (0.98-0.99)
- 12. Reverse mode operation : In this case αR times the collector current contributes to the collector current αR (0.1 to 0.5) (common collector current gain )
- 13. Reverse mode operation equations: VBE=0 IF=0 IE= -αRIR IC=-IR IE=IB+IC IB=IE-IC IR(1- αR)
- 14. Normal mode operation equations : VBE≠0 VBC≠0 Then Ic=αFIF-IR IE=IF-αRIR IB=(1-αF)IF+IR(I-αR) These are the Ebers moll model equation or terminal currents