The document discusses carbon nanotube field effect transistors (CNTFETs) as a potential replacement for MOSFETs. It describes some of the issues with continuously scaling down MOSFETs, and then provides details on different types of CNTFET designs and their advantages over MOSFETs, such as higher carrier mobility and transconductance. Some applications of CNTFETs are also mentioned. However, drawbacks include higher production costs and failure rates compared to traditional CMOS technology.
Modeling and Characterization of Single and Multichannel CNTFETMuntasir Mahdi
Electronic devices are getting smaller day by day. And so designers are working on the MOSFETs to develop smaller MOSFETs with better performance. Carbon Nanotube
Field Effect Transistor is a very good replacement for MOSFETs
and has a better response than conventional MOSFET. In this
study, we developed a CNTFET model using MATLAB and
Simulink by using an empirical model equation. The model is
very useful for circuit designers because this model can be used
as a circuit component. We described the model development
process, comparisons between our Simulink model and an ideal
CNTFET I-V curves in terms of Channel length and CNT
diameter
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
Modeling and Characterization of Single and Multichannel CNTFETMuntasir Mahdi
Electronic devices are getting smaller day by day. And so designers are working on the MOSFETs to develop smaller MOSFETs with better performance. Carbon Nanotube
Field Effect Transistor is a very good replacement for MOSFETs
and has a better response than conventional MOSFET. In this
study, we developed a CNTFET model using MATLAB and
Simulink by using an empirical model equation. The model is
very useful for circuit designers because this model can be used
as a circuit component. We described the model development
process, comparisons between our Simulink model and an ideal
CNTFET I-V curves in terms of Channel length and CNT
diameter
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
CNTFET Based Analog and Digital Circuit Designing: A ReviewIJMERJOURNAL
ABSTRACT: Silicon has been a material of choice for the last many decades and more than 95% of electronics devices are from silicon. However, silicon has reached to its saturation level and extracting more and more performance is difficult and costly now. A new material which has a potential to replace Si and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT). CNT is a wonderful material possesses unique properties that make it a promising future material. CNT based field effect transistor (Cntfet) is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. CNTFT has been used extensively in realizing electronics circuits. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of Cntfet based analog and digital circuits has been presented. It has been observed that the use of CNTFET has improved the performance of both analog and digital circuits. The work will be very useful to the people working in the field of CNT based analog and digital circuit designing.
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
CNTFET Based Analog and Digital Circuit Designing: A ReviewIJMERJOURNAL
ABSTRACT: Silicon has been a material of choice for the last many decades and more than 95% of electronics devices are from silicon. However, silicon has reached to its saturation level and extracting more and more performance is difficult and costly now. A new material which has a potential to replace Si and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT). CNT is a wonderful material possesses unique properties that make it a promising future material. CNT based field effect transistor (Cntfet) is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. CNTFT has been used extensively in realizing electronics circuits. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of Cntfet based analog and digital circuits has been presented. It has been observed that the use of CNTFET has improved the performance of both analog and digital circuits. The work will be very useful to the people working in the field of CNT based analog and digital circuit designing.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET...VLSICS Design
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significant speed limiter in Double gate technology. The model is tested by comparing with simulation results obtained from Sentauras TCAD simulations.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
With integrated circuit scales in the 22-nm regime, conventional planar MOSFETs have approached the limit of their potential performance. To overcome short channel effects 'SCEs' that appears for deeply scaled MOSFETs beyond 10nm technology node many new device structures and channel materials have been proposed. Among these devices such as Gate-all-around FET. Recentely, junctionless GAA MOSFETs JL-GAA MOSFETs have attracted much attention since the junctionless MOSFET has been presented. In this paper, DC characteristics of an n-type JL-GAA MOSFET are presented using a 3-D quantum transport model. This new generation device is conceived with the same doping concentration level in its channel source/drain allowing to reduce fabrication complexity. The performance of our 3D JL-GAA structure with a 20nm gate length and a rectangular cross section have been obtained using SILVACO TCAD tools allowing also to study short channel effects. Our device reveals a favorable on/off current ratio and better SCE characteristics compared to an inversionmode GAA transistor. Our device reveals a threshold voltage of 0.55 V, a sub-threshold slope of 63mV / decade which approaches the ideal value, an Ion/Ioff ratio of 10e + 10 value and a drain induced barrier lowring (DIBL) value of 98mV/V.
The development of IGBT power modules has always been characterized by the continuous increase of the power density for cost reduction and design optimization of the complete frequency converter system. The requirement of higher power density is directly associated with increased current. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. The trench structure differs from the conventional planar structure in that the gate oxide and conductive polysilicon gate electrode are formed in a deep narrow trench below the chip surface. When voltage is applied to the gate, a channel forms along the vertical wall of the trench perpendicular to the surface of the chip.
The vertical channel requires less chip area permitting a substantial increase in cell density. The increased cell density produces a greater channel width per unit chip area resulting in a reduction in the Rchannel portion of theIGBT’s on-state voltage drop. The second advantage of the trench structure is complete elimination of the "JFET" resistance (RJFET) which results from the constriction of current flow in the region between adjacent cells in the planar structure. Additionally, there are some less obvious secondary advantages of the trench structure. In particular, the non-uniform current density in the "JFET" region of the planar structure can result in SOA aberrations at high current densities. Physical based 2D simulation study is used to characterized Trench Gate IGBT with Carrier Storage (CS) Layer. Simulation results indicates to a complex nature of interaction between P-well, retrograde CS-layer and trench gate. For some reasons cell current with increasing CS-layer doping start degrades earlier than breakdown voltage.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Event Management System Vb Net Project Report.pdfKamal Acharya
In present era, the scopes of information technology growing with a very fast .We do not see any are untouched from this industry. The scope of information technology has become wider includes: Business and industry. Household Business, Communication, Education, Entertainment, Science, Medicine, Engineering, Distance Learning, Weather Forecasting. Carrier Searching and so on.
My project named “Event Management System” is software that store and maintained all events coordinated in college. It also helpful to print related reports. My project will help to record the events coordinated by faculties with their Name, Event subject, date & details in an efficient & effective ways.
In my system we have to make a system by which a user can record all events coordinated by a particular faculty. In our proposed system some more featured are added which differs it from the existing system such as security.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
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Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Forklift Classes Overview by Intella PartsIntella Parts
Discover the different forklift classes and their specific applications. Learn how to choose the right forklift for your needs to ensure safety, efficiency, and compliance in your operations.
For more technical information, visit our website https://intellaparts.com
1. 07-06-2021 Arpan Deyasi, RCCIIT, India 1
Carbon Nanotube Field
Effect Transistor
Arpan Deyasi
RCCIIT, India
2. Setback of MOSFET
07-06-2021 Arpan Deyasi, RCCIIT, India 2
Continuous downscaling of MOSFET leads to ……………………
➢ Short-channel effect
➢ Higher leakage current
➢ Closeness of ON and OFF level in digital circuit due to reduction of
saturation current at higher rate compared with reduction rate of
threshold voltage
➢ Excessive variation of process technology
3. 07-06-2021 Arpan Deyasi, RCCIIT, India 3
Solutions to Overcome
➢ High-K dielectric, highly conductive gate electrode,
different substrate material replacing Si
➢ Novel geometries
➢ New architectures
4. Why MOSFET can be replaced via CNTFET?
1-D ballistic transport of electrons and holes
High drive current and large transconductance
High temperature resilience and strong covalent bond
5. Comparison with MOSFET
Switching takes place in MOSFET by altering channel resistivity, but for
CNTFET, it occurs through modulation of channel resistance
Higher drive currents of CNTFET compared with MOSFET
Higher transconductance
Higher carrier mobility
Higher gate capacitance leads to improved carrier transport, which provides
better ON-current performance
6. Coaxial Gate
Classification of CNTFET
Based on geometry
MOSFET
Based on operation
CNTFET
Top Gate Bottom Gate Schottky barrier
13. 07-06-2021 Arpan Deyasi, RCCIIT, India 13
SB-CNFET works on the principle of direct tunneling through the Schottky
barrier at the source channel junction
The barrier width is controlled by the gate voltage and hence the
transconductance of the device depends on the gate voltage
Schottky Barrier CNTFET
At low gate bias, large barrier limits the current in the channel . As gate bias is
increased, it reduces the barrier width, which increases quantum mechanical
tunneling through the barrier , and therefore increases current flow in transistor
channel
In SBCNFET, the transistor action occurs by modulating the transmission coefficient
of the device
14. MOSFET like CNTFET
overcome problems in SB-CNFET by operating like normal MOSFET
operates on the principle of modulation the barrier height by gate
voltage application
Drain current is controlled by number of charge that is induced in
the channel by gate terminal
15. GS GC CS
= +
ΦGS: work function difference between gate and substrate
ΦGC: work function difference between gate and carbon nanotube channel
ΦCS: work function difference between carbon nanotube channel
and substrate
I-V characteristic
16. ,
1
cnt
GB cnt s fb
ox
Q
V V
C
= − +
Potential balance equation
VGB: gate-to-body bias
Ψcnt,s: potential at interface of gate oxide and carbon nanotube channel
Qcnt: total charge in carbon nanotube
Vfb: flatband voltage
Cox1: oxide capacitance at front-gate
I-V characteristic
17. 1
1
1 1 1
2
2
2
ln
ox
ox
ox ox ox
l
C
t r t t r
r
=
+ + +
tox1: gate oxide thickness at front surface
l: channel length
r: channel radius
I-V characteristic
18. Using carrier concentration modeling and charge modeling equations
, ,
( , )
GB cnt s cnt s CB fb
V f V V
= + +
VCB: channel to back-gate bias
I-V characteristic
19. ( )
, 0
, 2 2
, 0
( )
exp
( , )
F C cnt s cb
B
cnt s cb
F cnt s cb C
B
E E q V
I
k T
f V
E q qV q E
k T
− + − −
=
+ − − −
for ψcnt,s<(VCB+φ0)
for ψcnt,s>=(VCB+φ0)
1
C
ox
qlN
C
=
I-V characteristic
20. , 0
, 0
( (0)
ln 1 exp
( ( )
ln 1 exp
F C cnt s SB
B
B
DS
F C cnt s DB
B
E E q V
k T
qk T
I
h E E q l V
k T
− + − −
+
=
− + − −
− +
I-V characteristic
21. 07-06-2021 Arpan Deyasi, RCCIIT, India 21
Comparison of n-FET and p-FET
Palladium (Pd) is the best contact metal found for p-FETS (no Schottky
Barrier at the interface)
Aluminium is used to create near Ohmic contacts with the SNT in n-FET
Small SBs exist at the interface between Al and CNT
Overall performance of p-FET is better than n-FETS
22. 07-06-2021 Arpan Deyasi, RCCIIT, India 22
Advantage of CNTFET
Better control over channel formation
Higher transconductance
Lower threshold voltage
Lower subthreshold slope
Higher electron mobility
Higher current density
23. Applications of CNTFET
Memory design
Biosensor
RF circuits
Interconnect with very low loss: Logic circuits: multiple level interconnects
with negligible parasitic effects
Energy source in battery and solar cell
24. 07-06-2021 Arpan Deyasi, RCCIIT, India 24
Drawbacks of CNTFET
Higher production cost owing to difficulties in mass production
Defect and failure rate at device and circuit level is higher than traditional
CMOS based circuits
Degrades when exposed to Oxygen, which decreases its lifetime