The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
Discover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/gan-systems-gs61004b-gan-hemt/
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Transphorm’s new die design for its TPH3206PS GaN HEMT halves the cost per ampere compared to the previous model
Transphorm’s TPH3206PS transistor has a new die design and manufacturing process. The die contacts are optimized on the die area to save space, and increase current density. The transistor metal contact and field plate structure have also been changed from the previous version. These innovations halve the cost per ampere compared to the previous model.
The TPH3206PS is a 600V EZ-GaN™ HEMT for high frequency operation from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-Tab™ scheme, which increases switching speed.
The TPH3206PS combines a normally-on GaN-on-Silicon HEMT, which withstands high voltages, and a standard low voltage MOSFET, which drives high frequency, in a cascode configuration that ultimately yields a normally-off transistor.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, HEMT, MOSFET and resistor.
The report also proposes a comparison with the GaN Systems GS66504B 650V HEMT. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.
More information on that report at http://www.i-micronews.com/reports.html
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
Discover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/gan-systems-gs61004b-gan-hemt/
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Transphorm’s new die design for its TPH3206PS GaN HEMT halves the cost per ampere compared to the previous model
Transphorm’s TPH3206PS transistor has a new die design and manufacturing process. The die contacts are optimized on the die area to save space, and increase current density. The transistor metal contact and field plate structure have also been changed from the previous version. These innovations halve the cost per ampere compared to the previous model.
The TPH3206PS is a 600V EZ-GaN™ HEMT for high frequency operation from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-Tab™ scheme, which increases switching speed.
The TPH3206PS combines a normally-on GaN-on-Silicon HEMT, which withstands high voltages, and a standard low voltage MOSFET, which drives high frequency, in a cascode configuration that ultimately yields a normally-off transistor.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, HEMT, MOSFET and resistor.
The report also proposes a comparison with the GaN Systems GS66504B 650V HEMT. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.
More information on that report at http://www.i-micronews.com/reports.html
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
In-depth physical and cost analysis of Samsung’s ‘1y-nm’ low power DRAM.
More information: https://www.systemplus.fr/reverse-costing-reports/samsung-lpddr5-12gb-mobile-memory/
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Broadcom AFEM-8100 System-in-Package in the Apple iPhone 11 Seriessystem_plus
Cost effective third generation of mid/high band Front-End Module with advanced and innovative packaging.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8100-system-in-package-in-the-apple-iphone-11-series/
Power Module Packaging 2018: Material Market and Technology Trends report by ...Yole Developpement
Power packaging is continuously adapting to power application market trends.
More information on that report at : https://www.i-micronews.com/category-listing/product/power-module-packaging-2018-material-market-and-technology-trends.html
Intel Foveros and TSMC 3D SoIC are competing head-to-head for high-end packaging – How will Samsung react ?More information here : https://www.i-micronews.com/products/high-end-performance-packaging-3d-2-5d-integration-2020/
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
System-in-Package Technology and Market Trends 2021 - SampleYole Developpement
Through enabling design and supply chain agility, SiP will reach $19B by 2026, with IDMs, OSATs, and foundries taking advantage of it.
More information : https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2021/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
Second Generation of TSMC’s Integrated Fan-Out (inFO) Packaging for the Apple...system_plus
The latest Apple application processor engine : from the stacked board to the A11, and reverse costing of TSMC's updated inFO packaging
More information on that report at http://www.systemplus.fr/reverse-costing-reports/second-generation-of-tsmcs-integrated-fan-out-info-packaging-for-the-apple-a11-found-in-the-iphone-x/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Market will more than double by 2025 driven by heavy investments in data centers.
More information: https://www.i-micronews.com/products/optical-transceivers-for-datacom-telecom-2020/
Driven by application diversification, IPDs (integrated passive devices) continue their promising
growth.
Today, miniaturization and integration are key drivers in electronic devices. This is even more critical in several consumer applications, where thinner devices mean higher integration levels, necessitating low-profile components.
More information on that report at http://www.i-micronews.com/reports.html
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
In-depth physical and cost analysis of Samsung’s ‘1y-nm’ low power DRAM.
More information: https://www.systemplus.fr/reverse-costing-reports/samsung-lpddr5-12gb-mobile-memory/
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Broadcom AFEM-8100 System-in-Package in the Apple iPhone 11 Seriessystem_plus
Cost effective third generation of mid/high band Front-End Module with advanced and innovative packaging.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8100-system-in-package-in-the-apple-iphone-11-series/
Power Module Packaging 2018: Material Market and Technology Trends report by ...Yole Developpement
Power packaging is continuously adapting to power application market trends.
More information on that report at : https://www.i-micronews.com/category-listing/product/power-module-packaging-2018-material-market-and-technology-trends.html
Intel Foveros and TSMC 3D SoIC are competing head-to-head for high-end packaging – How will Samsung react ?More information here : https://www.i-micronews.com/products/high-end-performance-packaging-3d-2-5d-integration-2020/
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
System-in-Package Technology and Market Trends 2021 - SampleYole Developpement
Through enabling design and supply chain agility, SiP will reach $19B by 2026, with IDMs, OSATs, and foundries taking advantage of it.
More information : https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2021/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
Second Generation of TSMC’s Integrated Fan-Out (inFO) Packaging for the Apple...system_plus
The latest Apple application processor engine : from the stacked board to the A11, and reverse costing of TSMC's updated inFO packaging
More information on that report at http://www.systemplus.fr/reverse-costing-reports/second-generation-of-tsmcs-integrated-fan-out-info-packaging-for-the-apple-a11-found-in-the-iphone-x/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Market will more than double by 2025 driven by heavy investments in data centers.
More information: https://www.i-micronews.com/products/optical-transceivers-for-datacom-telecom-2020/
Driven by application diversification, IPDs (integrated passive devices) continue their promising
growth.
Today, miniaturization and integration are key drivers in electronic devices. This is even more critical in several consumer applications, where thinner devices mean higher integration levels, necessitating low-profile components.
More information on that report at http://www.i-micronews.com/reports.html
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
SiGe based millimeter-wave chipset commercially available for
backhaul applications with beamforming capability.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/peraso-x710-chipset-60ghz-outdoor-wireless-broadband-solution/
First self-made SoC for advanced driving in Tesla Driver Assist Autopilot 3.0
More : https://www.systemplus.fr/reverse-costing-reports/tesla-ubq01b0-fsd-chip/
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
EPC’s 70 V ePower stage with separate and independent high and low side control inputs.
More information: https://www.systemplus.fr/reverse-costing-reports/epc2152-half-bridge-monolithic-gan-ic/
Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this silicon carbide product mainstream.
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
More information on that report a http://www.systemplus.fr/reverse-costing-reports/littelfuse-silicon-carbide-mosfet-lcis1mo120e0080-1200v-25a-80mohms/
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Broadcom AFEM-8072 – Mid and High Band LTE RF Front-End Module (FEM) - teardo...system_plus
The first mid/high band Long Term Evolution (LTE) Radio Frequency (RF) FEM in the Apple iPhone X integrates the latest generation of Film Bulk Acoustic Resonator (FBAR) technology with advanced and innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8072-mid-and-high-band-lte-rf-front-end-module-fem/
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicssystem_plus
The first SiC power module in commercialized electric vehicles.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
Infineon expands its presence in the SiC market with a new 1200V SiC MOSFET-based boost converter for solar applications.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/1200v-coolsictm-mosfet-module-df11mr12w1m1_b11-from-infineon/
High sensitivity micro-spectrometer with broad spectral coverage.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/hamamatsu-c12880ma-micro-spectrometer/
Bluetooth 5: System-on-Chip Comparison 2018system_plus
A cost-oriented report on cutting edge components from NXP, Qualcomm, Dialog and Nordic, all dedicated to the fifth generation Bluetooth protocol.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/bluetooth-5-system-on-chip-comparison-2018/
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...Yole Developpement
Complete reports and comparison of the latest generation products for smartphones from the leading optical image stabilization gyro players.
2-Axis Gyroscopes for Optical Image Stabilization (OIS) constitute a market where 123 million units were shipped in 2015, according to Yole Développement. This market originates only from high-end smartphones and two players share most of it: InvenSense, with 49%, and STMicroelectronics, with 39%.
The 2-axis gyroscopes are located inside the camera module of high-end smartphones. The main constraints are a small footprint and, more importantly, thinness.
Previously, thickness was the same as standard land grid array (LGA) or quad flat no-leads (QFN) package, close to 1mm. Now the standard is 0.65mm, which products from both InvenSense and STMicroelectronics attain.
InvenSense was first, with the IDG-2030, a 2.3x2.3x0.65mm gyroscope, which is still the smallest on the market. Since its introduction we found it in several smartphones from various manufacturers. The IDG-2030 uses the same Nasiri platform as other InvenSense inertial devices, with wafer-level integration of the MEMS sensor on top of the application specific integrated circuit (ASIC), thus providing only one die in the final LGA package.
Months later, STMicroelectronics released the L2G2IS, which shares the same dimensions. The device is manufactured using the same THELMA process as all STMicroelectronics inertial devices. The THELMA platform involves a two-die approach that is challenging for very thin package integration. However, both players now offer very low-cost gyros thanks to die size reduction and process optimization.
Both gyroscopes analyzed are 2-axis X, Y (Pitch, Roll). The two reports can be purchased separately or together in order to compare the technology and pricing of the main smartphone OIS gyro players, including previous generation products.
More information on that report at http://www.i-micronews.com/reports.html
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Editionsystem_plus
Early glimpse of very compact form millimeter-wave chipset commercially available for handset applications.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/qualcomm-60ghz-wigigwifi-802-11ad-chipset-worlds-first-smartphone-edition/
Sensirion SGP30 Gas Sensor 2018 - teardown reverse costing report published b...system_plus
The first monolithic multi-gas sensor from Sensirion, with a unique and innovative design using metal oxide technology.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/sgp30-gas-sensor-from-sensirion/
Sensirion, a leading manufacturer of digital microsensors and systems, recently released a gas sensor designed for consumer and appliance applications: the SGP30 Multi-Pixel. The SGP30 gas sensor is a new kind of sensor which measures different gas types in any environment. With a DFN package volume under 5.5 mm3, this gas sensor can be embedded in a variety of low-power systems, including smartphones, tablets, and laptops.
Power Discrete Packaging Comparison 2018 report published by System Plus Cons...system_plus
A cost-oriented overview of evolutionary trends in power discrete packages, from mW to kW.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/power-discrete-packaging-comparison-2018/
Apple iPhone X – Infrared Dot Projector 2017 teardown reverse costing report ...system_plus
The world’s most advanced dot projector for 3D sensing
with four innovative parts:
Its package; a dedicated VCSEL; a folded optic; and the active DOE.
Apple has made a great technology choice with its 3D facial identification for the iPhone X. The new technology is presented as being 20 times more accurate than the older fingerprint approach with a one-in-a million probability of a random person unlocking your iPhone.
Similar to Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing report published by System Plus Consulting (20)
SP20569 - IRay T3S Thermal Camera for Smartphonesystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/iray-t3s-thermal-camera-for-smartphone/
Technical and cost overview of the evolution of radio frequency front-end module technologies integrated in 5G mmWave and Sub-6 GHz Phones.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-2-focus-on-5g-chipset/
Technical and cost overview of the evolution of the radio frequency front-end module technologies integrated in the Apple iPhone series from 2016 - 2020.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-1-focus-on-apple/
Apple iPhone 12 series mmWave 5G Chipset and Antennasystem_plus
A study of the complete first generation of the 5G millimeter-wave chipset for Apple’s phones including custom antenna, front-end module and antenna-on-package.
More information : https://www.systemplus.fr/reverse-costing-reports/apple-iphone-12-series-mmwave-5g-chipset-and-antenna/
NVIDIA’s new generation Graphics Processing Unit (GPU) with TSMC CoWoS, 40GB Samsung HBM2, 2.5D and 3D packaging.
More information: https://www.systemplus.fr/reverse-costing-reports/nvidia-a100-ampere-gpu/
Deep analysis of the 400Gb optical transceiver from a leading Chinese company.
More information: https://www.systemplus.fr/reverse-costing-reports/innolights-400g-qsfp-dd-optical-transceiver/
Microsoft - Holographic Lens from Hololens 2system_plus
See-through holographic display for mixed reality smartglasses.
More on : https://www.systemplus.fr/reverse-costing-reports/microsoft-holographic-lens-from-hololens-2/
Cost-effective 1 mm2 miniature camera with customizable wafer-level optics for endoscopy and novel medical imaging devices.
More information : https://www.systemplus.fr/reverse-costing-reports/ams-naneye-mini-camera/
Discover Axis’s high-end product integrating its latest ARTPEC-7 in-house system-on-chip dedicated to network video and machine learning capabilities.
More information : https://www.systemplus.fr/reverse-costing-reports/axis-p1375-e-network-camera/
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)system_plus
Dig deep into Hikvision’s AI-powered thermal network camera for security applications.
More information: https://www.systemplus.fr/reverse-costing-reports/hikvision-intelligent-thermal-network-camera-ds-2td2166-15-v1/
Physical and cost analysis of Micron’s fifth-generation low-power DRAM memory.
More information: https://www.systemplus.fr/reverse-costing-reports/micron-lpddr5-12gb-mobile-memory/
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometerssystem_plus
Detailed technology and cost analysis of the high-end single-axis and dual-axis accelerometers integrated in the STIM318 IMU.
More information: https://www.systemplus.fr/reverse-costing-reports/safran-colibrys-ms1010-and-memsic-mxa2500m-high-end-accelerometers/
Sensonor STIM318 Inertial Measurement Unit (IMU)system_plus
Newest IMU with 9-axis detection and gyro bias instability of 0.3°/h from Sensonor.
More information: https://www.systemplus.fr/reverse-costing-reports/sensonor-stim318-inertial-measurement-unit-imu/
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDARsystem_plus
Analysis of the six channels and 905nm pulsed laser and photodiode from Hamamatsu, in Livox’s LiDAR for automotive ADAS.
More information: https://www.systemplus.fr/reverse-costing-reports/hamamatsu-photodiode-and-laser-in-livox-horizon-lidar/
Everspin’s Spin Transfer Torque MRAM with perpendicular magnetic tunnel junction.
More information: https://www.systemplus.fr/reverse-costing-reports/everspin-emd3d256m-sttmram-memory/
MEMS Fabry-Perot interferometer in a very tiny NIR spectrometer.
More information: https://www.systemplus.fr/reverse-costing-reports/spectral-engines-nirone-sensor-x/
World’s first 76-81 GHz automotive single-chip radar in a System-on-Chip device with integrated Antenna-in-Package using Fan-Out packaging technology.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/mediatek-autus-r10-mt2706-77-79-ghz-ewlbaip-radar-chipset/
Deep analysis of the latest generation of under-display optical fingerprint sensors using micro-optics.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/goodixs-ultra-thin-optical-in-display-fingerprint/
Advanced System-in-Package Technology in Apple’s AirPods Prosystem_plus
Analysis of Apple’s first SiP found in the latest AirPods, featuring a fully integrated SiP for audio codec and Bluetooth connectivity.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/advanced-system-in-package-technology-in-apples-airpods-pro/
Compare the technology and cost of 19 microphones from Knowles, Goertek, AAC Technologies, STMicroelectronics, TDK-InvenSense, TDK-Epcos, Cirrus Logic and Vesper.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/consumer-mems-microphones-comparison-2020/
zkStudyClub - Reef: Fast Succinct Non-Interactive Zero-Knowledge Regex ProofsAlex Pruden
This paper presents Reef, a system for generating publicly verifiable succinct non-interactive zero-knowledge proofs that a committed document matches or does not match a regular expression. We describe applications such as proving the strength of passwords, the provenance of email despite redactions, the validity of oblivious DNS queries, and the existence of mutations in DNA. Reef supports the Perl Compatible Regular Expression syntax, including wildcards, alternation, ranges, capture groups, Kleene star, negations, and lookarounds. Reef introduces a new type of automata, Skipping Alternating Finite Automata (SAFA), that skips irrelevant parts of a document when producing proofs without undermining soundness, and instantiates SAFA with a lookup argument. Our experimental evaluation confirms that Reef can generate proofs for documents with 32M characters; the proofs are small and cheap to verify (under a second).
Paper: https://eprint.iacr.org/2023/1886
How to Get CNIC Information System with Paksim Ga.pptxdanishmna97
Pakdata Cf is a groundbreaking system designed to streamline and facilitate access to CNIC information. This innovative platform leverages advanced technology to provide users with efficient and secure access to their CNIC details.
UiPath Test Automation using UiPath Test Suite series, part 6DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 6. In this session, we will cover Test Automation with generative AI and Open AI.
UiPath Test Automation with generative AI and Open AI webinar offers an in-depth exploration of leveraging cutting-edge technologies for test automation within the UiPath platform. Attendees will delve into the integration of generative AI, a test automation solution, with Open AI advanced natural language processing capabilities.
Throughout the session, participants will discover how this synergy empowers testers to automate repetitive tasks, enhance testing accuracy, and expedite the software testing life cycle. Topics covered include the seamless integration process, practical use cases, and the benefits of harnessing AI-driven automation for UiPath testing initiatives. By attending this webinar, testers, and automation professionals can gain valuable insights into harnessing the power of AI to optimize their test automation workflows within the UiPath ecosystem, ultimately driving efficiency and quality in software development processes.
What will you get from this session?
1. Insights into integrating generative AI.
2. Understanding how this integration enhances test automation within the UiPath platform
3. Practical demonstrations
4. Exploration of real-world use cases illustrating the benefits of AI-driven test automation for UiPath
Topics covered:
What is generative AI
Test Automation with generative AI and Open AI.
UiPath integration with generative AI
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Building RAG with self-deployed Milvus vector database and Snowpark Container...Zilliz
This talk will give hands-on advice on building RAG applications with an open-source Milvus database deployed as a docker container. We will also introduce the integration of Milvus with Snowpark Container Services.
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
Why You Should Replace Windows 11 with Nitrux Linux 3.5.0 for enhanced perfor...SOFTTECHHUB
The choice of an operating system plays a pivotal role in shaping our computing experience. For decades, Microsoft's Windows has dominated the market, offering a familiar and widely adopted platform for personal and professional use. However, as technological advancements continue to push the boundaries of innovation, alternative operating systems have emerged, challenging the status quo and offering users a fresh perspective on computing.
One such alternative that has garnered significant attention and acclaim is Nitrux Linux 3.5.0, a sleek, powerful, and user-friendly Linux distribution that promises to redefine the way we interact with our devices. With its focus on performance, security, and customization, Nitrux Linux presents a compelling case for those seeking to break free from the constraints of proprietary software and embrace the freedom and flexibility of open-source computing.
Pushing the limits of ePRTC: 100ns holdover for 100 daysAdtran
At WSTS 2024, Alon Stern explored the topic of parametric holdover and explained how recent research findings can be implemented in real-world PNT networks to achieve 100 nanoseconds of accuracy for up to 100 days.
Full-RAG: A modern architecture for hyper-personalizationZilliz
Mike Del Balso, CEO & Co-Founder at Tecton, presents "Full RAG," a novel approach to AI recommendation systems, aiming to push beyond the limitations of traditional models through a deep integration of contextual insights and real-time data, leveraging the Retrieval-Augmented Generation architecture. This talk will outline Full RAG's potential to significantly enhance personalization, address engineering challenges such as data management and model training, and introduce data enrichment with reranking as a key solution. Attendees will gain crucial insights into the importance of hyperpersonalization in AI, the capabilities of Full RAG for advanced personalization, and strategies for managing complex data integrations for deploying cutting-edge AI solutions.
Sudheer Mechineni, Head of Application Frameworks, Standard Chartered Bank
Discover how Standard Chartered Bank harnessed the power of Neo4j to transform complex data access challenges into a dynamic, scalable graph database solution. This keynote will cover their journey from initial adoption to deploying a fully automated, enterprise-grade causal cluster, highlighting key strategies for modelling organisational changes and ensuring robust disaster recovery. Learn how these innovations have not only enhanced Standard Chartered Bank’s data infrastructure but also positioned them as pioneers in the banking sector’s adoption of graph technology.
Observability Concepts EVERY Developer Should Know -- DeveloperWeek Europe.pdfPaige Cruz
Monitoring and observability aren’t traditionally found in software curriculums and many of us cobble this knowledge together from whatever vendor or ecosystem we were first introduced to and whatever is a part of your current company’s observability stack.
While the dev and ops silo continues to crumble….many organizations still relegate monitoring & observability as the purview of ops, infra and SRE teams. This is a mistake - achieving a highly observable system requires collaboration up and down the stack.
I, a former op, would like to extend an invitation to all application developers to join the observability party will share these foundational concepts to build on:
20 Comprehensive Checklist of Designing and Developing a WebsitePixlogix Infotech
Dive into the world of Website Designing and Developing with Pixlogix! Looking to create a stunning online presence? Look no further! Our comprehensive checklist covers everything you need to know to craft a website that stands out. From user-friendly design to seamless functionality, we've got you covered. Don't miss out on this invaluable resource! Check out our checklist now at Pixlogix and start your journey towards a captivating online presence today.
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
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Any dispute that may arise about the interpretation or execution of the current terms and conditions shall be resolved
applying the French law.
It the dispute cannot be settled out-of-court, the competent Court will be the Tribunal de Commerce de Nantes.
Performed by