MESFET
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1) MESFET stands for Metal-Semiconductor Field Effect Transistor and consists of a conducting channel between a source and drain contact that is controlled by a Schottky metal gate. 2) The I-V characteristics of a MESFET can be modeled as a voltage-controlled current source where the drain current is varied by small changes in the gate potential. 3) MESFETs have advantages over other transistors for RF applications due to their high electron mobility, low stray capacitance from the Schottky gate, and negative temperature coefficient.
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A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
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Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
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A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
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In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
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There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
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I AM SARMAD KHOSA
BSIT (5TH A)
(ISP)
FACEBOOK PAGLE::
https://www.facebook.com/LAUGHINGHLAUGHTER/
YOUTUBE CHANNEL:::
https://www.youtube.com/channel/UCUjaIeS-DHI9xv-ZnBpx2hQ
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I AM SARMAD KHOSA
BSIT (5TH A)
(ISP)
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https://www.facebook.com/LAUGHINGHLAUGHTER/
YOUTUBE CHANNEL:::
https://www.youtube.com/channel/UCUjaIeS-DHI9xv-ZnBpx2hQ
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A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device that is commonly used in power electronics. It works by modulating charge concentration between a gate electrode, which is insulated from other device regions by an oxide layer, and a body region. Depending on whether it is an n-channel or p-channel MOSFET, the source and drain regions have either n+ or p+ doping while the body has the opposite doping. Applying a voltage to the gate can turn the channel between source and drain on or off to allow or prevent current flow. MOSFETs can be made with silicon on insulator or other semiconductor materials.
Ujt
The unijunction transistor (UJT) is a three-terminal semiconductor device with a single PN junction. It exhibits a negative resistance characteristic, which makes it useful for oscillator circuits. The UJT consists of a lightly doped N-type silicon bar with a single P-type region forming the emitter junction. It has three terminals - base 1, base 2, and emitter. In its active mode, the UJT shows negative resistance, where increasing the emitter voltage initially causes the emitter current to decrease. This physical phenomenon is called conductivity modulation and is caused by injection of holes from the emitter into the base, decreasing the resistance between the emitter and base 1.
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Field Effect Transistor
FET are :
Voltage controlled devices
Higher input impedance
Less sensitive to temp. variations
Unipolar device
Smaller/ Easily Integrated Chips
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Varactor diode is a type of PN junction diode where the capacitance of the PN junction can be controlled by applying a reverse bias voltage. As the reverse bias voltage is changed, the width of the depletion region between the P and N semiconductors changes, altering the capacitance. Varactor diodes are commonly used in applications like variable resonant tank circuits, automatic frequency control circuits, and frequency modulation in radios and televisions. They operate by varying the capacitance through adjustment of the depletion region width, similar to how the distance between capacitor plates controls capacitance.
FET
The document discusses junction field-effect transistors (JFETs). Key points include:
1. JFETs are unipolar devices that depend on only one type of charge carrier and can operate with very low voltage and current.
2. The gate voltage controls the drain current, giving JFETs very high input impedance.
3. JFETs have advantages over BJTs like faster switching, lower noise, and zero temperature drift of output.
PHYSICS OF SEMICONDUCTOR DEVICES
1. When a P-type semiconductor is joined with an N-type semiconductor, a PN junction is formed known as a semiconductor diode.
2. Semiconductor diodes are widely used as rectifiers to convert alternating current (AC) input into direct current (DC) output.
3. In a PN junction, the diffusion of majority carriers across the junction leaves behind charged acceptor and donor ions which form an electric field called the depletion region or space charge region.
3.bipolar junction transistor (bjt)
Bipolar junction transistors (BJTs) are three-terminal semiconductor devices consisting of two pn junctions. There are two types, NPN and PNP, depending on the order of doping. BJTs can operate as amplifiers and switches by controlling the flow of majority charge carriers through the base terminal. Proper biasing is required to operate the transistor in its active region between cutoff and saturation. Common configurations include common-base, common-emitter, and common-collector, each with different input and output characteristics. Maximum ratings like power dissipation and voltages must be considered for circuit design and temperature derating.
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1) The document discusses FinFET, a type of non-planar transistor used in modern semiconductor fabrication. It describes the construction of FinFET which involves etching fins on an SOI substrate and wrapping gates around the fins.
2) FinFET works by having an elevated fin-shaped channel that the gate wraps around. This allows FinFET to operate at lower voltage and offer higher drive current compared to planar transistors.
3) FinFET technology is being widely adopted in integrated circuits due to advantages like suppressed short channel effect, better drive current, lower leakage power, and no random dopant fluctuation.
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JFET
This document discusses the JFET (junction field-effect transistor). It begins by defining a field-effect transistor as a device where the electric field controlling current flow is perpendicular to the direction of current. It then describes the structure of an n-channel JFET, showing how a p-type channel is created between two n-type regions. Key features of the JFET are that it is a voltage-controlled, majority-carrier device with higher input impedance and lower output impedance than BJT transistors. The document provides equations for calculating the pinch-off voltage and expressions for transconductance. It concludes by outlining some applications of JFETs in RF amplifiers, measuring instruments, oscillators, and digital circuits
A1080111
The document analyzes noise performance in a separate gate InAlAs/InGaAs double heterostructure double gate high electron mobility transistor (DG-HEMT). An analytical model is developed to evaluate the intrinsic noise sources and noise coefficients for the DG-HEMT operated with separate gate voltages. The drain noise current, gate noise current, and correlation coefficient are computed from the model. Simulation results show good agreement with the analytical predictions for noise coefficients in the separate gate DG-HEMT.
International Journal of Engineering Research and Development
Electrical, Electronics and Computer Engineering,
Information Engineering and Technology,
Mechanical, Industrial and Manufacturing Engineering,
Automation and Mechatronics Engineering,
Material and Chemical Engineering,
Civil and Architecture Engineering,
Biotechnology and Bio Engineering,
Environmental Engineering,
Petroleum and Mining Engineering,
Marine and Agriculture engineering,
Aerospace Engineering.
Surface Traping in Silicon Nanowire Dual material engineered Cylindrical gate...
In this paper, the effect of gate field screening by surface
trap charges are studied using COMSOL 5.0. A nano wire
dual material Cylindrical gate (DMCG) MOSFET is
modeled and shift of turn on voltage due to the screening
effect is computed. It is shown that DMCG design increase
the drain current enhancement .However here the concept
of work function difference also present in term of gate bias
and comprehensive study of short channel effect of DMCG
has been focused .The objective of this paper is focus on
Current vs Gate voltage, Energy Band diagram,
CurrentDensity, electron and hole concentration and
Electric field when MOSFET is turn on. It is also examined
that Cylindrical MOSFET the minimum surface potential in
the channel reduces which resulting increasing in electron
velocity and thereby improving carrier transport efficiency.
I v characteristics and transconductance modeling for dual channel algangan m...
Abstract This paper presents the design and practical implementation of a Boost-type power converter for Photovoltaic (PV) system for energy storage application based on Perturb and Observe Maximum Power Point Tracking (MPPT) algorithm. A Boost converter is used to regulate battery charging. The major drawbacks faced by the tracking algorithm in the conventional method of tracking is overcome by the strategic utilization of a properly controlled and programmed design of Peripheral Interface Controller which helps in achieving optimized output results of MPPT algorithm.. The system is controlled by a Peripheral Interface Controller (PIC) 16F877 controller by sensing the solar panel voltage and generating the Pulse Width Modulation (PWM) signal to control duty cycle of the boost converter. This type of microcontroller was chosen is best suited as it has the necessary features for the proposed design such as built-in Analog-to-Digital Converter (ADC), PWM outputs, low power consumption and low cost. Hardware results demonstrate the effectiveness and validity of the proposed system in order to attain satisfactory results from the method. This paper mainly focuses on the effective utilization of PIC controller in the implementation of the MPPT algorithm and its constructional features which help gain the appropriate and accurate results. Keywords: Photovoltaic system, Analog-to-Digital Converter, Peripheral Interface Controller, Maximum Power Point Tracking, Pulse Width Modulation, Boost-type power converter, Duty Cycle.
Metal-Semiconductor Contact
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
Tunnel diode
This document discusses a lecture on tunnel diodes given by Arpan Deyasi of RCC Institute of Information Technology, Kolkata, India. The lecture covers the mechanism of carrier transport in tunnel diodes, which is tunneling. It also discusses the criteria for tunneling to occur, including a lower depletion width, lower effective mass, and degenerate doping. Examples are given of materials that can satisfy these criteria, such as semiconductors with large bandgaps or lower effective masses. The characteristic I-V curve of a tunnel diode is presented, showing its negative differential resistance region. Finally, applications of tunnel diodes such as in oscillators are mentioned.
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...
The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration 𝑁0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration 𝑁0 = 1016 𝑐𝑚−3 at drain end and m as 1.496 ×10−2cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm.
A Two-stages Microstrip Power Amplifier for WiMAX Applications
Amplification is one of the most basic and prevalent microwave analog circuit functions. Wherefore
power amplifiers are the most important parts of electronic circuits. This is why the designing of power
amplifiers is crucial in analog circuit designing. The intent of this work is to present an analysis and design
of a microwave broadband power amplifier by using two stages topology. A two stages power amplifier using
a distributed matching network for WiMAX applications is based on ATF-21170 (GaAs FET). The
configuration aims to achieve high power gain amplifier with low return loss over a broad bandwidth. The
proposed BPA is designed with a planar structure on an epoxy (FR4) substrate. The planar structure is also
utilized for getting the good matching condition. The advanced design system (ADS) software is used for
design, simulation, and optimization the proposed amplifier. The complete amplifier achieves an excellent
power gain; is changed between 28.5 and 20 dB with an output power of 12.45dBm at 1dB compression
point. For the input reflection coefficient (S11) is varied between -20 and -42 dB. While the output reflection
coefficient (S22) is varied between -10 dB and -49 dB over the wide frequency band of 3.2-3.8 GHz.
TWO DIMENSIONAL MODELING OF NONUNIFORMLY DOPED MESFET UNDER ILLUMINATION
A two dimensional numerical model of an optically gated GaAs MESFET with non uniform channel doping has been developed. This is done to characterize the device as a photo detector. First photo induced voltage (Vop) at the Schottky gate is calculated for estimating the channel profile. Then Poisson’s equation for the device is solved numerically under dark and illumination condition. The paper aims at developing the MESFET 2-D model under illumination using Monte Carlo Finite Difference method. The results discuss about the optical potential developed in the device, variation of channel potential under different biasing and illumination and also about electric fields along X and Y directions. The Cgs under different illumination is also calculated. It has been observed from the results that the characteristics of the device are strongly influenced by the incident optical illumination.
phase shifter
This document presents the design of a phased array antenna system using phase shifters. A group of 4 students designed and simulated a 1x4 microstrip patch antenna array fed by a Wilkinson power divider in ADS software. They first designed a single rectangular patch antenna, then a 1:4 Wilkinson power divider and combined them into an antenna array. Phase shifters using varactor diodes were also designed and simulated for different voltage biases. The phase and insertion loss characteristics of the phase shifters were analyzed to verify their performance in the phased array system.
Two Dimensional Modeling of Nonuniformly Doped MESFET Under Illumination
A two dimensional numerical model of an optically gated GaAs MESFET with non uniform channel doping has been developed. This is done to characterize the device as a photo detector. First photo induced voltage (Vop) at the Schottky gate is calculated for estimating the channel profile. Then Poisson’s equation for the device is solved numerically under dark and illumination condition. The paper aims at developing the MESFET 2-D model under illumination using Monte Carlo Finite Difference method. The results discuss about the optical potential developed in the device, variation of channel potential under different biasing and illumination and also about electric fields along X and Y directions. The Cgs under different illumination is also calculated. It has been observed from the results that the characteristics of the device are strongly influenced by the incident optical illumination.
Design and simulation double Ku-band Vivaldi antenna
Due to the tremendous development in the field of wireless communication and its use in several fields, whether military or commercial was proposed. A novel tapered slot Vivaldi antenna is designed and simulated at double band frequency (Ku-band) using computer simulation technology (CST) software 2020. The dimensions of the antenna are 2.3 × 1 × 0.4 mm3 with a microstrip feed of 0.5 mm. The proposed antenna is improved by cutting a number of circle shapes on the patch layer in different positions. The simulation results are divided into more sections according to the number of circle shapes cutting. The results are good acceptance and make the improved Vivaldi antenna valuable in many future wireless communication applications.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect
transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.
The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent
mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of
the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have
been evaluated to determine the output characteristics, device transconductance and cut-off frequency for
50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been
obtained. The results so obtained are in close agreement with experimental data, thereby proving the
validity of the model.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation. The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have been evaluated to determine the output characteristics, device transconductance and cut-off frequency for 50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been obtained. The results so obtained are in close agreement with experimental data, thereby proving the validity of the model.
Gunn diode
This document discusses transferred electron devices and the Gunn diode. It begins with an overview of carrier transfer mechanisms in semiconductors and how an external electric field can enable interband and intraband transitions. Negative differential conductivity, which is important for amplification, arises when the conductivity decreases with increasing electric field due to transfer of carriers between valleys. The document then focuses on the Gunn diode, the operating principles, materials used, and mathematical modeling of negative conductivity. It covers formation of domains under high fields and their effect on current. Different modes of Gunn diode operation and example applications are also summarized.
Scaling in conventional MOSFET for constant electric field and constant voltage
Scaling in conventional MOSFET for constant electric field and constant voltageRCC Institute of Information Technology
Scaling in conventional MOSFETSimilar to MESFET (20)
International Journal of Engineering Research and Development
International Journal of Engineering Research and Development
Surface Traping in Silicon Nanowire Dual material engineered Cylindrical gate...
Surface Traping in Silicon Nanowire Dual material engineered Cylindrical gate...
I v characteristics and transconductance modeling for dual channel algangan m...
I v characteristics and transconductance modeling for dual channel algangan m...
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...
Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In Th...
A Two-stages Microstrip Power Amplifier for WiMAX Applications
A Two-stages Microstrip Power Amplifier for WiMAX Applications
TWO DIMENSIONAL MODELING OF NONUNIFORMLY DOPED MESFET UNDER ILLUMINATION
TWO DIMENSIONAL MODELING OF NONUNIFORMLY DOPED MESFET UNDER ILLUMINATION
Two Dimensional Modeling of Nonuniformly Doped MESFET Under Illumination
Two Dimensional Modeling of Nonuniformly Doped MESFET Under Illumination
Design and simulation double Ku-band Vivaldi antenna
Design and simulation double Ku-band Vivaldi antenna
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...
Scaling in conventional MOSFET for constant electric field and constant voltage
Scaling in conventional MOSFET for constant electric field and constant voltage
More from RCC Institute of Information Technology
Carrier scattering and ballistic transport
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
Electromagnetic Wave Propagations
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
Biot-Savart law
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
Ampere's circuital law
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
Magnetic Potentials
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
Reflection and Transmission coefficients in transmission line
Reflection and Transmission coefficients in transmission lineRCC Institute of Information Technology
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.Impedance in transmission line
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
Distortionless Transmission Line
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Quantum Hall Effect
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
Telegrapher's Equation
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
Dielectrics
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
Capacitor
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
Electrical Properties of Dipole
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
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Application of Gauss' Law
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
Fundamentals of Gauss' Law
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
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2) Derivations and proofs of Gauss's law using calculus theorems like divergence theorem.
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- The electrostatic potential is defined and its relationship to the electric field is explored.
Vector Integration
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Scalar and vector differentiation
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Coordinate transformation
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
Moletronics
Molecular electronics aims to use electronic molecules as passive or active electronic components. It has advantages over silicon technology such as smaller size (1-3 nm vs 14 nm), faster time cycles (1 fs vs 1 ns), and ability to integrate more gates per square centimeter (1013 vs 108). Major challenges include difficulty experimentally verifying and directly characterizing molecular devices and fully integrating them with silicon technology. Potential applications include sensors, display devices, energy transaction devices, smart materials, and molecular-scale logic and memory devices.
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Reflection and Transmission coefficients in transmission line
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International Conference on NLP, Artificial Intelligence, Machine Learning and Applications (NLAIM 2024) offers a premier global platform for exchanging insights and findings in the theory, methodology, and applications of NLP, Artificial Intelligence, Machine Learning, and their applications. The conference seeks substantial contributions across all key domains of NLP, Artificial Intelligence, Machine Learning, and their practical applications, aiming to foster both theoretical advancements and real-world implementations. With a focus on facilitating collaboration between researchers and practitioners from academia and industry, the conference serves as a nexus for sharing the latest developments in the field.
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原件一模一样【微信：bwp0011】《(Humboldt毕业证书)柏林大学毕业证学位证》【微信：bwp0011】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
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Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
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MESFET
- 1. MESFET Course coordinator: Arpan Deyasi 2/19/2021 1 Arpan Deyasi, India
- 2. MESFET = MEtal Semiconductor Field Effect Transistor = Schottky gate FET Schottky gate p n - Source n -Drain Back contact semi-insulating substrate Depletion region channel 2/19/2021 2 Arpan Deyasi, India
- 3. MESFET consists of a conducting channel positioned between a source and drain contact region Structure carrier flow from source to drain is controlled by a Schottky metal gate 2/19/2021 3 Arpan Deyasi, India base material on which the transistor is fabricated is semi-insulting substrate (at present GaAs is used)
- 4. buffer layer is epitaxially grown over the substrate to isolate defects in the substrate from the transistor Structure lightly doped (n) conducting layer of semiconducting material is developed for channel formation 2/19/2021 4 Arpan Deyasi, India two Ohmic contacts, the source and drain, are fabricated on the highly doped layer to provide access to the external circuit Schottky contact is fabricated as gate contact
- 5. depletion region is wide enough to pinch off the channel without applied voltage, so the enhancement-mode MESFET is naturally "OFF“ When a positive voltage is applied between the gate and source, the depletion region shrinks, and the channel becomes conductive Enhancement-mode MESFET 2/19/2021 5 Arpan Deyasi, India becomes conductive a positive gate-to-source voltage puts the Schottky diode in forward bias, where a large current can flow
- 6. If the depletion region does not extend all the way to the p-type substrate, the MESFET is a depletion-mode MESFET A depletion-mode MESFET is conductive or "ON" when VGS is not applied and is turned "OFF" upon the application of a -V , which increases the width of the Depletion mode MESFET 2/19/2021 6 Arpan Deyasi, India application of a -VGS, which increases the width of the depletion region such that it "pinches off" the channel
- 7. Symbol of MESFET Depletion p-type Enhancement p-type Depletion n-type Enhancement n-type 2/19/2021 Arpan Deyasi, India 7 p-type p-type n-type n-type
- 8. I-V characteristics Resistance of the channel e D L L R A q N A ρ µ = = L 2/19/2021 8 Arpan Deyasi, India ( ) e D dep L R q N W a X x µ = − Xdep(x): width of depletion layer of Schottky barrier at x along the channel
- 9. I-V characteristics ( ) D D e D dep I dx dV I dR q N W a X x µ = = − voltage drop across elemental section ‘dx’ of the channel 2/19/2021 9 Arpan Deyasi, India ( ) D e D dep I dx q N W a X x dV µ = −
- 10. I-V characteristics where 2 ( ) ( ) s G bi dep D V x V V X x qN ε + + = 2/19/2021 10 Arpan Deyasi, India ( ) ( ) D dep dep s qN dV X x dX x ε =
- 11. I-V characteristics 2 2 1 1 ( ) X X D e D dep X X I dx q N W a X x dV µ = − ∫ ∫ Integrating, we get 2/19/2021 Arpan Deyasi, India 11 1 1 X1 X2 S D
- 12. I-V characteristics 2 1 1 ( ) ( ) ( ) X D e D dep X D I q N W a X x L qN X x dX x µ = − × ∫ 2/19/2021 12 Arpan Deyasi, India ( ) ( ) D dep dep s qN X x dX x ε ×
- 13. I-V characteristics 2 2 2 2 3 3 2 1 2 1 2 ( ) ( ) 2 3 D e D s q N W I a X X X X L µ ε = − − − X : minimum depletion layer width of channel 2/19/2021 13 Arpan Deyasi, India X1: minimum depletion layer width of channel X2: maximum depletion layer width of channel
- 14. 2 ( ) ( ) s G bi dep D V x V V X x qN ε + + = I-V characteristics 2/19/2021 14 Arpan Deyasi, India 2 2 2 ( ) ( ) s G bi dep D a V x V V X x qN a ε + + =
- 15. I-V characteristics 2 2 ( ) ( ) s G bi dep D V x V V X x a qN a ε + + = 2/19/2021 15 Arpan Deyasi, India ( ) ( ) G bi dep P V x V V X x a V + + =
- 16. I-V characteristics 1 ( ) 0 ( ) G bi dep V x P V V X X x a V = + = = 2/19/2021 16 Arpan Deyasi, India 2 ( ) ( ) D G bi D dep V x V P V V V X X x a V = + + = =
- 17. I-V characteristics 2 2 2 2 3 3 2 1 2 1 2 ( ) ( ) 2 3 D e D s q N W I a X X X X L µ ε = − − − 3/2 2 G bi D V V V + + 2/19/2021 17 Arpan Deyasi, India 3/2 2 3 2 3 G bi D P P D P G bi D P V V V V V I I V V V V + + = + + −
- 18. I-V characteristics where 2 2 3 2 D e P s q N W I a L µ ε = 2/19/2021 18 Arpan Deyasi, India IP: pinch-off current
- 19. ID VGS1 VGS2 VGS3 I-V characteristics 2/19/2021 19 Arpan Deyasi, RCCIIT VD
- 20. Features of MESFET As the drain current can be varied by introducing small variations in the gate potential, so the MESFET can be modelled as a voltage-controlled-current-source (VCCS) It may be used to increase the power level of a microwave signal 2/19/2021 20 Arpan Deyasi, India microwave signal
- 21. Cut-off Frequency 2 4 m s co GS g v f C L π π = = 2/19/2021 Arpan Deyasi, India 21 Cut-off frequency depends on [i] gate length [ii] saturated drift velocity
- 22. Maximum Frequency of Oscillation max 2 m s o GS g v f C L π π = = It is half-of-the cut-off frequency 2/19/2021 Arpan Deyasi, India 22 It is half-of-the cut-off frequency
- 23. Maximum Frequency of Oscillation When input and output ports are matched and power gain is maximum max 0.5 D o co R f f R R R = + + 2/19/2021 Arpan Deyasi, India 23 maxo co G i S R R R + +
- 24. Advantages of GaAs MESFETs over other Transistors high level of electron mobility which is required for high performance RF applications Schottky diode gate structure results in very low stray capacitance levels which lend themselves to excellent RF and microwave performance 2/19/2021 24 Arpan Deyasi, India RF and microwave performance MESFET has a very much higher input when compared to bipolar transistors as a result of the non-conducting diode junction
- 25. Advantages of GaAs MESFETs over other Transistors MESFET has a negative temperature co-efficient which inhibits some of the thermal problems experienced with other transistors Compared to MOSFET, MESFET does not have the problems associated with oxide traps 2/19/2021 Arpan Deyasi, India 25 Low parasitic capacitances Very low noise figure problems associated with oxide traps MESFET has better channel length control than a JFET
- 26. Application RF amplifier Satellite communications RADAR Cell Phones 2/19/2021 26 Arpan Deyasi, India Switching circuit in microwave region