The document discusses an 8-transistor (8T) SRAM cell designed for low-power applications. The 8T SRAM cell aims to improve read and write operations at sub-threshold voltages down to 0.1V. It uses single-ended read and write operations enabled by additional access transistors. The 8T cell is proposed to reduce power consumption and delay compared to standard 6T and conventional 8T SRAM cells. Key aspects of the 8T cell include improved readability using a read assist technique and reduced dynamic power usage through two extra pass transistors.
Design & Implementation of Subthreshold Memory Cell design based on the prima...IOSRJVSP
As there is a demand for portable electronic systems or devices, there is an incremental growth in the technology in the past few decades and also technology is cumulative at a random rate, devices are consuming large amount of power due to this the life of the battery is draining fast. so there must be a alternative devices or circuits which can reduce the power by efficiently maintaining the area and performance, therefore life of battery can be increased. As SRAM is the heart of block in all the electronic design, where the power consumption is maximum there by analyzing, estimating & modifying or changing the logic, will be able to reduce the power and performance can be greatly achieved. This proposal describes under the principle of ultra-low power logic approach which operates under subthreshold voltage operating which leads to lower power and also efficient in functionality along with secondary constraints.
The International Journal of Engineering and Science (The IJES)theijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
An Innovative Design solution for minimizing Power Dissipation in SRAM CellIJERA Editor
Over the years, the development of the logic on the chip is increased. To sustain and drive the logic flow, various techniques and SRAM cell designs have been implemented. The basic element of memory design is 6T SRAM cell. But while dealing with this 6T SRAM cell there are some issues with the parametric analysis on the performance of the cell. This paper presents an innovative design idea of new 8T RAM cell with various parametric analysis. The proposed cell is compared with the standard cell in terms of different parameters such as area, speed and power consumption along with the loading effect with the increase in load capacitance on the cell. The structure is designed with CMOS 45 nm Technology with BSIM 4 MOS modelling using Microwind 3.5 software tool
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
Design & Implementation of Subthreshold Memory Cell design based on the prima...IOSRJVSP
As there is a demand for portable electronic systems or devices, there is an incremental growth in the technology in the past few decades and also technology is cumulative at a random rate, devices are consuming large amount of power due to this the life of the battery is draining fast. so there must be a alternative devices or circuits which can reduce the power by efficiently maintaining the area and performance, therefore life of battery can be increased. As SRAM is the heart of block in all the electronic design, where the power consumption is maximum there by analyzing, estimating & modifying or changing the logic, will be able to reduce the power and performance can be greatly achieved. This proposal describes under the principle of ultra-low power logic approach which operates under subthreshold voltage operating which leads to lower power and also efficient in functionality along with secondary constraints.
The International Journal of Engineering and Science (The IJES)theijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
An Innovative Design solution for minimizing Power Dissipation in SRAM CellIJERA Editor
Over the years, the development of the logic on the chip is increased. To sustain and drive the logic flow, various techniques and SRAM cell designs have been implemented. The basic element of memory design is 6T SRAM cell. But while dealing with this 6T SRAM cell there are some issues with the parametric analysis on the performance of the cell. This paper presents an innovative design idea of new 8T RAM cell with various parametric analysis. The proposed cell is compared with the standard cell in terms of different parameters such as area, speed and power consumption along with the loading effect with the increase in load capacitance on the cell. The structure is designed with CMOS 45 nm Technology with BSIM 4 MOS modelling using Microwind 3.5 software tool
A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell Ieee Xpert
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
A Single-Ended With Dynamic Feedback Control
8T Subthreshold SRAM Cell
In the project#1, IBM 130nm process is used to design and manual layout a 128 word SRAM, with word size 10bits. Cadence's Virtuoso is applied for layout editing, DRC and LVS running and circuit simulation.
Design and Simulation Low power SRAM Circuitsijsrd.com
SRAMs), focusing on optimizing delay and power. As the scaling trends in the speed and power of SRAMs with size and technology and find that the SRAM delay scales as the logarithm of its size as long as the interconnect delay is negligible. Non-scaling of threshold mismatches with process scaling, causes the signal swings in the bitlines and data lines also not to scale, leading to an increase in the relative delay of an SRAM, across technology generations. Appropriate methods for reduction of power consumption were studied such as capacitance reduction, very low operating voltages, DC and AC current reduction and suppression of leakage currents to name a few.. Many of reviewed techniques are applicable to other applications such as ASICs, DSPs, etc. Battery and solar-cell operation requires an operating voltage environment in low voltage area. These conditions demand new design approaches and more sophisticated concepts to retain high device reliability. The proposed techniques (USRS and LPRS) are topology based and hence easier to implement.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Two parallel single phase rectifiers by using single phase to three phase ind...eSAT Journals
Abstract A single-phase to three-phase drive system composed of two parallel single-phase rectifiers, a three-phase inverter and an induction motor was proposed. The system combines two parallel rectifiers without the use of transformers. The system model and the control strategy, including the PWM technique, have been developed. The complete comparison between the proposed and standard configurations has been carried out in this paper. Compared to the conventional topology, the proposed system permits to reduce the rectifier switch currents, the THD of the grid current with same switching frequency or the switching frequency with same THD of the grid current and to increase the fault tolerance characteristics. In addition, the losses of the proposed system may be lower than that of the conventional counterpart. The initial investment of the proposed system (due to high number of semiconductor devices) cannot be considered a drawback, especially considering the scenario where the cited advantages justify such initial investment. The experimental results have shown that the system is controlled properly, even with transient and occurrence of fault
Energy optimization of 6T SRAM cell using low-voltage and high-performance in...IJECEIAES
The performance of the cell deteriorates, when static random access memory (SRAM) cell is operated below 1V supply voltage with continuous scale down of the complementary metal oxide semiconductor (CMOS) technology. The conventional 6T, 8T-SRAM cells suffer writeability and read static noise margins (SNM) at low-voltages leads to degradation of cell stability. To improve the cell stability and reduce the dynamic power dissipation at low- voltages of the SRAM cell, we proposed four SRAM cells based on inverter structures with less energy consumption using voltage divider bias current sink/source inverter and NOR/NAND gate using a pseudo-nMOS inverter. The design and implementation of SRAM cell using proposed inverter structures are compared with standard 6T, 8T and ST-11T SRAM cells for different supply voltages at 22-nm CMOS technology exhibit better performance of the cell. The read/write static noise margin of the cell significantly increases due to voltage divider bias network built with larger cell-ratio during read path. The load capacitance of the cell is reduced with minimized switching transitions of the devices during high-to-low and low- to-high of the pull-up and pull-down networks from VDD to ground leads to on an average 54% of dynamic power consumption. When compared with the existing ones, the read/write power of the proposed cells is reduced to 30%. The static power gets reduced by 24% due to stacking of transistors takes place in the proposed SRAM cells as compare to existing ones. The layout of the proposed cells is drawn at a 45-nm technology, and occupies an area of 1.5 times greater and 1.8 times greater as compared with 6T-SRAM cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
A Comparitive Analysis of Improved 6t Sram Cell With Different Sram CellIJERA Editor
High speed and low power consumption have been the primary issue to design Static Random Access Memory (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the static noise margin (SNM) so the noise margin is also important parameter for the design of memory because the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum SNM of 17% increases compared with 7T SRAM cell.
In the project#1, IBM 130nm process is used to design and manual layout a 128 word SRAM, with word size 10bits. Cadence's Virtuoso is applied for layout editing, DRC and LVS running and circuit simulation.
Design and Simulation Low power SRAM Circuitsijsrd.com
SRAMs), focusing on optimizing delay and power. As the scaling trends in the speed and power of SRAMs with size and technology and find that the SRAM delay scales as the logarithm of its size as long as the interconnect delay is negligible. Non-scaling of threshold mismatches with process scaling, causes the signal swings in the bitlines and data lines also not to scale, leading to an increase in the relative delay of an SRAM, across technology generations. Appropriate methods for reduction of power consumption were studied such as capacitance reduction, very low operating voltages, DC and AC current reduction and suppression of leakage currents to name a few.. Many of reviewed techniques are applicable to other applications such as ASICs, DSPs, etc. Battery and solar-cell operation requires an operating voltage environment in low voltage area. These conditions demand new design approaches and more sophisticated concepts to retain high device reliability. The proposed techniques (USRS and LPRS) are topology based and hence easier to implement.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Two parallel single phase rectifiers by using single phase to three phase ind...eSAT Journals
Abstract A single-phase to three-phase drive system composed of two parallel single-phase rectifiers, a three-phase inverter and an induction motor was proposed. The system combines two parallel rectifiers without the use of transformers. The system model and the control strategy, including the PWM technique, have been developed. The complete comparison between the proposed and standard configurations has been carried out in this paper. Compared to the conventional topology, the proposed system permits to reduce the rectifier switch currents, the THD of the grid current with same switching frequency or the switching frequency with same THD of the grid current and to increase the fault tolerance characteristics. In addition, the losses of the proposed system may be lower than that of the conventional counterpart. The initial investment of the proposed system (due to high number of semiconductor devices) cannot be considered a drawback, especially considering the scenario where the cited advantages justify such initial investment. The experimental results have shown that the system is controlled properly, even with transient and occurrence of fault
Energy optimization of 6T SRAM cell using low-voltage and high-performance in...IJECEIAES
The performance of the cell deteriorates, when static random access memory (SRAM) cell is operated below 1V supply voltage with continuous scale down of the complementary metal oxide semiconductor (CMOS) technology. The conventional 6T, 8T-SRAM cells suffer writeability and read static noise margins (SNM) at low-voltages leads to degradation of cell stability. To improve the cell stability and reduce the dynamic power dissipation at low- voltages of the SRAM cell, we proposed four SRAM cells based on inverter structures with less energy consumption using voltage divider bias current sink/source inverter and NOR/NAND gate using a pseudo-nMOS inverter. The design and implementation of SRAM cell using proposed inverter structures are compared with standard 6T, 8T and ST-11T SRAM cells for different supply voltages at 22-nm CMOS technology exhibit better performance of the cell. The read/write static noise margin of the cell significantly increases due to voltage divider bias network built with larger cell-ratio during read path. The load capacitance of the cell is reduced with minimized switching transitions of the devices during high-to-low and low- to-high of the pull-up and pull-down networks from VDD to ground leads to on an average 54% of dynamic power consumption. When compared with the existing ones, the read/write power of the proposed cells is reduced to 30%. The static power gets reduced by 24% due to stacking of transistors takes place in the proposed SRAM cells as compare to existing ones. The layout of the proposed cells is drawn at a 45-nm technology, and occupies an area of 1.5 times greater and 1.8 times greater as compared with 6T-SRAM cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
A Comparitive Analysis of Improved 6t Sram Cell With Different Sram CellIJERA Editor
High speed and low power consumption have been the primary issue to design Static Random Access Memory (SRAM), but we are facing new challenges with the scaling of technology. The stability and speed of SRAM are important issues to improve efficiency and performance of the system. Stability of the SRAM depends on the static noise margin (SNM) so the noise margin is also important parameter for the design of memory because the higher noise margin confirms the high speed of the SRAM cell. In this paper, the improved 6T SRAM cell shows maximum reduction in power consumption of 88%, maximum reduction in delay of 64% and maximum SNM of 17% increases compared with 7T SRAM cell.
Average and Static Power Analysis of a 6T and 7T SRAM Bit-Cell at 180nm, 90nm...idescitation
A lot of consideration has been given to problems arising due to power dissipation.
Different ideas have been proposed by many researchers from the device level to the
architectural level and above. However, there is no universal way to avoid tradeoffs between
the power, delay and area. This is why; the designers are required to choose appropriate
techniques that satisfy application and product needs. Another important component of
power which contributes to power dissipation is Dynamic Power. This power is increasing
due to prolonged use of the electronic equipments. This is due to the fact that now-a-days
people are working on electronic systems from morning till night; it may be a mobile phone
or a laptop or any other equipment. This paper deals with the estimation of two components
of power i.e. static power (when device is in the standby mode) and the average power
(average amount of energy consumed with respect to time) of a 6T and 7T SRAM (Static
Random Access Memory) bit-cell at 180nm, 90nm, and 45nm CMOS Technology. This is
done in order to estimate the power required for a high speed operation of 6T and 7T
SRAM bit-cell.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Implementation of an Efficient SRAM for Ultra-Low Voltage Application Based o...IOSR Journals
Abstract: Operation of standard 6T static random access memory (SRAM) cells at sub or near threshold
voltages is unfeasible, predominantly due to degraded static noise margins (SNM) and poor robustness. We
analyze Schmitt-Trigger (ST)-based differential-sensing static random access memory (SRAM) bitcells for
ultralow-voltage operation. The ST-based SRAM bitcells address the fundamental conflicting design
requirement of the read versus write operation of a conventional 6T bitcell. The ST operation gives better readstability
as well as better write-ability compared to the standard 6T bitcell. In this paper we are going to
propose a new SRAM bitcell for the purpose of read stability and write ability by using 90nm technology , and
less power consumption, less area than the existing Schmitt trigger1 based SRAM. Design and simulations were done using DSCH and Microwind.
Index Terms: read stability, write ability, Schmitt trigger.
A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption u...iosrjce
In modern high performance integrated circuits, maximum of the total active mode energy is
consumed due to leakage current. SRAM cell array is main source of leakage current since majority of
transistor are utilized for on-chip memory in today high performance microprocessor and system on chip
designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage,
leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these
parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that
performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of
active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T
SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to
power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been
proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology.
International Journal of Modern Engineering Research (IJMER) is Peer reviewed, online Journal. It serves as an international archival forum of scholarly research related to engineering and science education.
IOSR journal of VLSI and Signal Processing (IOSRJVSP) is an open access journal that publishes articles which contribute new results in all areas of VLSI Design & Signal Processing. The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on advanced VLSI Design & Signal Processing concepts and establishing new collaborations in these areas.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Power analysis of 4 t sram by stacking technique using tanner tooleSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers