The document describes the design and simulation of a CMOS fabrication process using TCAD (Technology Computer-Aided Design). It involves dimensioning the design using MOSIS design rules, creating masks, and defining 44 steps for the process in Synopsys TCAD. This includes doping wells, growing oxides, depositing polysilicon, implanting sources and drains, and depositing metals. The process aims to fabricate n-well and p-well CMOS on a silicon substrate using a minimum number of masks. Characterization and optimization of the modeled device can be done using additional TCAD tools.
Multiple patterning is a class of technologies for manufacturing integrated circuits (ICs), developed for photolithography to enhance the feature density. The simplest case of multiple patterning is double patterning, where a conventional lithography process is enhanced to produce double the expected number of features. The resolution of a photoresist pattern is believed to blur at around 45 nm half-pitch. For the semiconductor industry, therefore, double patterning was introduced for the 32 nm half-pitch node and below. This presentation gives us an insight of why multiple patterning is an important to give us a better resolution below 32nm.
Multiple patterning is a class of technologies for manufacturing integrated circuits (ICs), developed for photolithography to enhance the feature density. The simplest case of multiple patterning is double patterning, where a conventional lithography process is enhanced to produce double the expected number of features. The resolution of a photoresist pattern is believed to blur at around 45 nm half-pitch. For the semiconductor industry, therefore, double patterning was introduced for the 32 nm half-pitch node and below. This presentation gives us an insight of why multiple patterning is an important to give us a better resolution below 32nm.
The low power has been the main concern for the VLSI industry with the technology scaling in CMOS process from 130 nm to 22nm. The presentation here gives a brief idea about the several low power VLSI techniques being used in VLSI circuits to reduce the power and delay. for any query feel free to visit us at: http://www.siliconmentor.com/
The low power has been the main concern for the VLSI industry with the technology scaling in CMOS process from 130 nm to 22nm. The presentation here gives a brief idea about the several low power VLSI techniques being used in VLSI circuits to reduce the power and delay. for any query feel free to visit us at: http://www.siliconmentor.com/
Ultra-thin body SOI MOSFETs: Term Paper_class presentation on Advanced topics...prajon
This slide describes one of the technology n the field of semiconductor devices, Ultra thin body SOI (Silicon on Insulator) MOSFETs and its various uses and characteristics.
Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photo lithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.
Cube Srl is an engineering firm with more than 10 years of experience in basic and detail engineering. We have developed an high level of expertise in the structural design of industrial steel structures and equipment. We act as a specialized engineering firm for EPC, contractors and manufactures providing basic and detail engineering.
Course Objectives:
Students undergoing this course would
Understand different methods of 3D Printing.
Gain knowledge about simulation of FDM process
Estimate time and material required for manufacturing a 3D component
Course Outcomes:
Upon the successful completion of course, students will be able to
Explain different types of 3d Printing techniques
Identify parameters for powder binding and jetting process
Determine effective use of ABS material for 3D Printing
Apply principles of mathematics to evaluate the volume of material require.
Module 1:
Introduction to Prototyping, Working of 3D Printer, Types of 3D printing Machines:
Exp 1: Modelling of Engineering component and conversion of STL format.
Exp 2: Slicing of STL file and study of effect of process parameter like layer thickness,
Orientation and infill on build time using software.
Exercise 1 : Component-1
Exercise 2 : Component-2
Module 2:
Exp 1 : 3D Printing of modeled component by varying layer thickness.
Exp 2 : 3D Printing of modeled component by varying orientation.
Exp 3: 3D Printing of modeled component by varying infill.
Module 3:
Study on effect of different materials like ABS, PLA, Resin etc, and dimensional accuracy.
Module 4:
Identifying the defects in 3D Printed components.
Module 5
Exp1: Modelling of component using 3D Scanner of real life object of unknown dimension
in reverse engineering.
Exp 2: 3D Printing of above modeled component.
The project was carried out keeping in mind the daily processes related to glassware industry (LA OPALA pvt ltd.) production. The analysis was carried out by Network Scheduling using CPM (Critical Path method). This project enabled me to apply the theoretical studies in practical application. It helped me to get an complete overview of modern day scenario and how the problems are tackled and the solutions are brought into application
Part I is a noteworthy description dedicated to the Problem Definition of Portal Building. Its content is related to various topics, including scrum performance, problem correlation, project value attribution, portal build requirements, glass construction, and simulations. https://www.slideshare.net/slideshow/comments-on-portal-compositions-part-i-pdf/268722476
ACEP Magazine edition 4th launched on 05.06.2024Rahul
This document provides information about the third edition of the magazine "Sthapatya" published by the Association of Civil Engineers (Practicing) Aurangabad. It includes messages from current and past presidents of ACEP, memories and photos from past ACEP events, information on life time achievement awards given by ACEP, and a technical article on concrete maintenance, repairs and strengthening. The document highlights activities of ACEP and provides a technical educational article for members.
We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
TOP 10 B TECH COLLEGES IN JAIPUR 2024.pptxnikitacareer3
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4. Introduction
• CMOS Design has basically Three Types
• pwell CMOS
• nwell CMOS
• Twin well/ Twin Tub CMOS
Technology CAD is
Numeric simulation of Semiconductor Process and Device
Basic subprogram used in TCAD
i. Sentaurus Structure Editor
ii. Sentaurus Process
iii. Sentaurus Device
iv. Sentaurus Workbench
v. Svisual
.
6/23/2014 4itm University, Gurgaon
6. Problem Statements
• Using TCAD, Design a process sequence to fabricate the following CMOS structure
This Design Involves the
following unit steps
6/23/2014 6itm University, Gurgaon
9. Dimensioning using Mosis Design Rule
6
4
2
4
6
2
1 1
3
3
2
2
2
24
n-mos/ p-mos Design Rule
o Only in Y-direction(horizontal) dimension
o All dimensions are in Lambda
o 1Lambda = 100nm (for this particular
Design, since channel length = 200nm)
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12. Mask Designing
Mask-1: For nwell doping
Mask-2: For pwell doping
42 24
4224
Mask-3: Active area (negative)
Nitride etching
Mask-4: Gate area (negative)
Polysilicon etching
6 12 30 12 6
11 2 40 2 11
Mask-5: Sorce – Drain Region
(negative) Gate-oxide etching
Mask-6: for Titanium etching
(negative)
Mask-7: for contact cut in thick
oxide (negative)
6 5 2 5 30 5 2 5 6
6 4 1214 30 41214 6
7 2 6 2 32 2 6 2 76/23/2014 12itm University, Gurgaon
13. Mask Designing
Mask-8: Aluminum etching 6 3 6 3 30 3 63 6
For a good design steps,
The number of mask
required should be
minimum
6/23/2014 13itm University, Gurgaon
37. Conclusion and future scope
• Taken a substrate first as per our required dimension
and lightly doped with Boron
• nwell and pwell creation
• Channel stop implantation and grown Field Oxide
• Gate Oxide and Polysilicon layer deposition
• LDD implantation
• Spacer formation
• Source – Drain Implantation
• Silicide formation
• Thick Oxide layer deposition for passivation
• Selected etching of Thick oxide and deposition of
Aluminum and patterning
Further characterization of the modeled device can be done using
Sdevice.
Complete optimization of device can only be done after creating a device
file (.des) correcponding to device characterization6/23/2014 37itm University, Gurgaon
39. Refrences
[1] Michael Duane, “The Role of TCAD in Compact Modelling ” , 3320 Scott
Blvd.,MS 1148,Santa Clara,CA.
[2] Sentaurus tool User Guide https://solvnet.synopsys.com..
6/23/2014 39itm University, Gurgaon