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This document summarizes the design of distributed amplifiers in 130nm CMOS SOI technology. Distributed amplification provides flat frequency response from DC to several GHz by combining the gain of active devices with transmission lines. The designed circuits include a common source distributed amplifier with floating body transistors achieving 7dB gain over 0.4-30GHz, and a cascode distributed amplifier with 6.8dB gain over 0.4-27GHz and improved matching. Performance comparisons show the benefits of SOI CMOS for wideband applications.












































