The document summarizes a presentation on simulating an NMOS transistor using TCAD tools. It introduces the topics covered, which include an overview of TCAD tools like Sentaurus Structure Editor, Process, Device, and Workbench. It then describes the fabrication process of the NMOS transistor through simulations in Sentaurus Process. The device is then simulated in Sentaurus Device to obtain electrical characteristics. Analytical results are discussed by varying device parameters. Future work aims to simulate more advanced devices like FinFETs and CNTFETs using 3D tools.