Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Multiple gate field effect transistors foreSAT Journals
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented. Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET
A simple N-channel MOSFET can be used as a diode, Switch and Active resistor. This presentation is a part of course of Analog CMOS Design, based on textbook of same title by Allen Holberg.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Multiple gate field effect transistors foreSAT Journals
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented. Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET
A simple N-channel MOSFET can be used as a diode, Switch and Active resistor. This presentation is a part of course of Analog CMOS Design, based on textbook of same title by Allen Holberg.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet TechnologyIJERA Editor
For the improvement of performance and noise tolerance in dynamic logic circuits, a technique is
proposed in this paper. A two-input AND gate is designed and simulated in 32nm technology using FinFET
device. Simulation results indicate that the proposed technique provides improvement in noise tolerance of
about three times and the use of FinFET device reduces the power consumption over the conventional MOSFET
designs.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Review of Fin FET Technology and Circuit Design ChallengesIJERA Editor
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control
FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the
existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This
permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,
better performance with bias voltage scaling and good matching due to low doping concentration in the channel.
There are, still, several challenges and limitations that FinFET technology has to face to be competitive with
other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as
device parasitic, performance and patterning approaches will be discussed.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
Designing High-Speed, Low-Power Full Adder Cells Based on Carbon Nanotube Tec...VLSICS Design
This article presents novel high speed and low power full adder cells based on carbon nanotube field effect
transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and
second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named
CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divided into
two modules, causing Sum and Cout signals are produced in a parallel manner. All inputs have been used
straight, without inverting. These designs also used the special feature of CNFET that is controlling the
threshold voltage by adjusting the diameters of CNFETs to achieve the best performance and right voltage
levels. All simulation performed using Synopsys HSPICE software and the proposed designs are compared
to other classical and modern CMOS and CNFET-based full adder cells in terms of delay, power
consumption and power delay product.
Please read the following IEEE Spectrum articles and answer the quest.pdffasttrackcomputersol
Please read the following IEEE Spectrum articles and answer the questions given. You may
want to use illustrations in your answer to the questions, and mark them up accordingly as part of
answering the questions. If you take illustrations from some source (including the IEEE
Spectrum articles) please make sure this is properly cited.
http://spectrum.ieee.org/semiconductors/nanotechnology/the-next-highperformance-transistor-
could-be-made-from-lateral-nanowires Describe a FINFET and how it works. How is it different
than the planar MOSFET described in the first 5 slides of the TFET lecture? Is the FINFET a
quantum device? Give reasons why or why not. How is the nanowire device described here
different than the FINFET? Why is this difference an advantage for the nanowire device? They
one problem with the nanowire device is capacitive coupling. What is this and explain why it is a
problem with the nanowire device?
Solution
1)
The FinFET technology promises to provide the deliver superior levels of scalability needed to
ensure that the current progress with increased levels of integration within integrated circuits can
be maintained.
The FinFET offers many advantages in terms of IC processing that mean that it has been adopted
as a major way forwards for incorporation within IC technology.
FinFET technology has been born as a result of the relentless increase in the levels of
integration. The basic tenet of Moore\'s law has held true for many years from the earliest years
of integrated circuit technology. Essentially it states that the number of transistors on a given
area of silicon doubles every two years.
Some of the landmark chips of the relatively early integrated circuit era had a low transistor
count even though they were advanced for the time. The 6800 microprocessor for example had
just 5000 transistors. Todays have many orders of magnitude more.
basically what is finfet??
FinFET technology takes its name from the fact that the FET structure used looks like a set of
fins when viewed.
The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin
silicon \"fin\" from which it gains its name. The thickness of the fin determines the effective
channel length of the device.
In terms of its structure, it typically has a vertical fin on a substrate which runs between a larger
drain and source area. This protrudes vertically above the substrate as a fin.
The gate orientation is at right angles to the vertical fin. And to traverse from one side of the fin
to the other it wraps over the fin, enabling it to interface with three side of the fin or channel.
This form of gate structure provides improved electrical control over the channel conduction and
it helps reduce leakage current levels and overcomes some other short-channel effects..
The term FinFET is used somewhat generically. Sometimes it is used to describe any fin-based,
multigate transistor architecture regardless of number of gates.
Due to the increased emphas.
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
Builder.ai Founder Sachin Dev Duggal's Strategic Approach to Create an Innova...Ramesh Iyer
In today's fast-changing business world, Companies that adapt and embrace new ideas often need help to keep up with the competition. However, fostering a culture of innovation takes much work. It takes vision, leadership and willingness to take risks in the right proportion. Sachin Dev Duggal, co-founder of Builder.ai, has perfected the art of this balance, creating a company culture where creativity and growth are nurtured at each stage.
JMeter webinar - integration with InfluxDB and GrafanaRTTS
Watch this recorded webinar about real-time monitoring of application performance. See how to integrate Apache JMeter, the open-source leader in performance testing, with InfluxDB, the open-source time-series database, and Grafana, the open-source analytics and visualization application.
In this webinar, we will review the benefits of leveraging InfluxDB and Grafana when executing load tests and demonstrate how these tools are used to visualize performance metrics.
Length: 30 minutes
Session Overview
-------------------------------------------
During this webinar, we will cover the following topics while demonstrating the integrations of JMeter, InfluxDB and Grafana:
- What out-of-the-box solutions are available for real-time monitoring JMeter tests?
- What are the benefits of integrating InfluxDB and Grafana into the load testing stack?
- Which features are provided by Grafana?
- Demonstration of InfluxDB and Grafana using a practice web application
To view the webinar recording, go to:
https://www.rttsweb.com/jmeter-integration-webinar
Transcript: Selling digital books in 2024: Insights from industry leaders - T...BookNet Canada
The publishing industry has been selling digital audiobooks and ebooks for over a decade and has found its groove. What’s changed? What has stayed the same? Where do we go from here? Join a group of leading sales peers from across the industry for a conversation about the lessons learned since the popularization of digital books, best practices, digital book supply chain management, and more.
Link to video recording: https://bnctechforum.ca/sessions/selling-digital-books-in-2024-insights-from-industry-leaders/
Presented by BookNet Canada on May 28, 2024, with support from the Department of Canadian Heritage.
Smart TV Buyer Insights Survey 2024 by 91mobiles.pdf91mobiles
91mobiles recently conducted a Smart TV Buyer Insights Survey in which we asked over 3,000 respondents about the TV they own, aspects they look at on a new TV, and their TV buying preferences.
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
Essentials of Automations: Optimizing FME Workflows with ParametersSafe Software
Are you looking to streamline your workflows and boost your projects’ efficiency? Do you find yourself searching for ways to add flexibility and control over your FME workflows? If so, you’re in the right place.
Join us for an insightful dive into the world of FME parameters, a critical element in optimizing workflow efficiency. This webinar marks the beginning of our three-part “Essentials of Automation” series. This first webinar is designed to equip you with the knowledge and skills to utilize parameters effectively: enhancing the flexibility, maintainability, and user control of your FME projects.
Here’s what you’ll gain:
- Essentials of FME Parameters: Understand the pivotal role of parameters, including Reader/Writer, Transformer, User, and FME Flow categories. Discover how they are the key to unlocking automation and optimization within your workflows.
- Practical Applications in FME Form: Delve into key user parameter types including choice, connections, and file URLs. Allow users to control how a workflow runs, making your workflows more reusable. Learn to import values and deliver the best user experience for your workflows while enhancing accuracy.
- Optimization Strategies in FME Flow: Explore the creation and strategic deployment of parameters in FME Flow, including the use of deployment and geometry parameters, to maximize workflow efficiency.
- Pro Tips for Success: Gain insights on parameterizing connections and leveraging new features like Conditional Visibility for clarity and simplicity.
We’ll wrap up with a glimpse into future webinars, followed by a Q&A session to address your specific questions surrounding this topic.
Don’t miss this opportunity to elevate your FME expertise and drive your projects to new heights of efficiency.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
3. The term “FINFET” describes a non-
planar, double gate transistor built on
an SOI substrate, based on the single
gate transistor design.
The important characteristics of
FINFET is that the conducting channel
is wrapped by a thin Si “fin”, which
forms the body of the device.
INTRODUCTION
The thickness of the fin determines the effective channel length of the
device.
4. FINFET is a transistor design first developed by
Chenming Hu and his colleagues at the University
of California at Berkeley, which tries to overcome
the worst types of SCE(Short Channel Effect).
HISTORY OF FINFET
SOI FINFET with thick oxide on top of fin are called “Double-Gate” and
those with thin oxide on top as well as on sides are called “Triple-Gate”
FINFETs
Originally, FINFET was developed for use on Silicon-
On-Insulator(SOI).
5. CONTRUCTION OF A FINFET
1. Substrate
3. Oxide deposition
2. Fin etch
7. 7. Deposition of the gate
Finally a highly n+-doped poly silicon layer is deposited on top of the
fins, thus up to three gates are wrapped around the channel: one on
each side of the fin, and - depending on the thickness of the gate
oxide on top - a third gate above.
8. WORKING OF A FINFET
The working principle of a FinFet is similar to
that of a conventional MOSFET.
The MOSFET can function in two modes for
both p-channel and n-channel MOSFETs:
enhancement mode and depletion mode
The channel shows maximum conductance
when there is no voltage on the gate terminal.
As the voltage changes to positive or negative,
the conductivity of the channel reduces.
In enhancement mode of MOSFET, when there is no voltage on the gate terminal, it
does not conduct.
Unlike the depletion mode, in enhancement mode, the device conducts better when
there is more voltage on the gate terminal.
9. ADVANTAGES OF FINFET
Higher technological maturity than planar DG.
Suppressed Short Channel Effect(SCE)
Better in driving current
More compact
Low cost
DISADVANTAGES OF FINFET
Reduced mobility for electrons
Higher source and drain resistances
Poor reliability
10. This month it is expected Qualcomm
Snapdragon 855 will reportedly be the 'world's
first' 7nm SoC
Media tek helio x30 chipset with decacore
processor uses 10nm technology
Samsung started its 10nm SoC mass production
in the year 2016 (Samsung galaxy s8)
In the New York Times, On may 4 2011, it was
published that INTEL will use FINFET for about
22nm.
LATEST UPDATES ABOUT
FINFET
11. Possibility to save power arises when both gates can be controlled
separately.
The second gate can be used to control the threshold voltage of the
device, thereby allowing fast switching on one side and reduced leakage
currents when circuits are idle.
Finally, separate access to both gates could also be used to design
simplified logic gates. This would also reduce power, and save chip area,
leading to smaller, more cost-efficient designs.
World leader in smartphones, Samsung Electronics has incorporated
FinFet in its 14nm processors (Exynos7 Octra). This processor is used in
the latest Samsung smartphone, the Samsung Galaxy S6.
Along with Samsung, Apple, Intel and TSMC are set to ship the 14nm
technology by 2016. This technology will benefit all smartphones as it
will speed up the phone.
APPLICATIONS
12. Finally, the industry has proved already many times that existing
planar technology can be mastered and new roadblocks in device
scaling can be removed either by innovations in technological
processes or design solutions.
This moves the targeted introduction of FINFET technology towards
even smaller technology nodes increasing technological challenges
and restricting its specifications even more.
CONCLUSION
