The document discusses simulation of MOSFETs using SILVACO TCAD software. It provides an overview of SILVACO and the process and device simulation capabilities. The document then walks through the steps of simulating a MOSFET fabrication process using ATHENA and defining the materials and doping steps. It describes analyzing the fabricated device using ATLAS to extract characteristics and define contacts before discussing plans to simulate additional devices by varying parameters.

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An overview on SILVACO TCAD and MOSFET
Simulation Process Analysis using SILVACO
Presented By:
Md.Majharul Islam
Showmik Singha
Shaon Das
Dept. of Electrical and Electronic Engineering
Shahjalal University Of Science And Technology
SEMICONDUCTOR Research Group ,SUST

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Outline
SEMICONDUCTOR Research Group,SUST
Introduction to TCAD
What Is SILVACO?
How it WORKS?
SILVACO Analogy
About SILVACO MOSFET Simulation
Process Simulation
Device simulation
Characterization and
analysis
Our Next Work

3. Introduction to TCAD
• Technology CAD (Technology Computer Aided Design) is a branch of
electronic design automation that models semiconductor fabrication
and semiconductor device operation.
• The modeling of the fabrication is termed Process TCAD [ATHENA In
SILVACO],
• Modeling of the device operation is termed Device TCAD[ATLAS In
SILVACO].
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4. Working Scope on SILVACO
•It has Built in Library for Different Semiconductor
materials.
•We can characterize those materials in Various
Analysis process.
•It has 23 different type of Substrate materials to
research
•15 different type of impurity materials
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5. Working Scope on SILVACO cont…
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List of Different available dopant in SILVACO

6. How SILVACO Works?
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SILVACO
ATHENA
Input Text
Command Output .STR file
ATLASDeckbuild
Tonyplot

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SILVACO Analogy
SILVACO is a
Virtual Fabrication Lab
ATHENA fabricates a device by
different process
ATLAS analyze device
characteristics

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Defining Substrate Materials :

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Oxide Layer To p-well Formation:

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Nitrous diffusion, gate oxide formation and etching:

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Sacrificial Cleaning and defining gate oxide width:

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Polysilicon formation ,Oxidation, Etching & DE-oxidation:

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Aluminum Formation and Etching :

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Inside view and mirroring the device to for Final MOSFET:

15. Data extracting and Shaping metal Electrode
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16. Defining Drain ,Gate and Source Metal node
ready for data extraction via ATLAS
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Source Drain
Gate

17. Our next work
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Extracting data from the device via ATLAS
Collect more information about Available materials on
SILVACO.
Simulate different MOSFET Devices with variation of
different parameter.
Design and Analysis (Solar cell, Multi-gate FET,GFET)