The document discusses CMOS VLSI design technology and future trends. It provides an overview of CMOS technology and basic MOSFET operation. It then discusses how nanotechnology and integrated tri-gate transistors can help address limitations of CMOS scaling by reducing feature sizes and parasitic leakage. The document concludes that continued CMOS scaling will eventually be limited and alternatives like nanotechnology may be needed to retain device characteristics at smaller sizes.

1. CMOS VLSI Design Technology, and Future Trends Piyush kumar Final yr.(ece dept.)

3. CMOS TECHNOLOGY OVERVIEW Complementary-symmetry / metal-oxide-semiconductor (CMOS) is a major class of integrated circuits. CMOS chips include microprocessor, microcontroller, static RAM, and other digital logic circuits. The words “complementary-symmetry” refers to the fact that the design uses symmetrical pairs of p-type and n-type MOSFET transistors for logic functions, only one of which is switched on at any time (Figure 1.)

5. Basic N Well CMOS technology

7. II. WAFERS in Nano CHIPS A study of the documents from the research labs and marketing organization around the world reveal that concept of Silicon wafers is undergoing a change slowly with the SOI and other chips. If CMOS Nanotechnology is to be replaced by CAEN, the availability of wafer spectrum for research wi; be aswide as follows: A. SOI Wafers SOI: silicon on insulator 2” SOIP(100) 500anstrom Si layer 4” SOINor P (100) Device 2-4 m SOI layer diameter: 200mm crystal orientation: <100> 4 deg off-axis Dopant: N type (Phosphor) SOI layer thickness: 3.0um III. Nano wires and Interconnects Stochastically assembled nanoscale architectures have the potential to achieve device densities 100 times greater than today's CMOS. A key challenge facing nanotechnologies is controlling parallel sets of nanowires (NWs)

8. IV. NANOTRANSISORS:- It is required to unerstand and study on the carrier transport theory to understand the electron conduction behavior in transistors smaller than 20-nm. In nano-scale transistors, the number of atoms in the active region is finite; the nature of random distribution of atoms in the active region causes fluctuation in device property and deteriorates the design margins for integration. Nonetheless, scientists and engineers in Foundry master the variability in device

9. Advanced Depleted-Substrate Transistors: Single-gate, Double-gate transisters

11. 1. Introduction: Moore’s Law

18. To reduce short channel effects, we need to reduce Xd(channel depletion layer thickness), Xj( Junction depletion width),Tox (oxide layer thickness under gate) So we will use an special type of FET called FINFET

19. Application: A New High Speed CMOS Camera for Real-Time Tracking Applications : There are many potential applications for very high-speed vision sensors in robotics. Maybe tracking is the most obvious one. The main idea of this paper is to combine existing standard technology (CMOS imaging sensors The performance of this new camera is on one hand limited by the maximum pixel clock of the sensor, on the other hand by the USB 2.0 micro frame timing and bandwidth constraints.

20. CONCLUSION The goal was to study the various materials used in VLSI technology. The study reveals that present scaling of the CMOS technology to nano dimensions will have to limit at some point and make further scaling may be impossible while retaining all the electrical characteristics of the devices .

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