CMOS Fabrication
n-well process
p-doped Wafer
p-substrate
Oxidation
p-substrate
Oxidation
SiO2
Photoresist
p-substrate
Oxidation
Photo-resist
Photolithography
p-substrate
Oxidation
Photo-resist
UV rays
Removal of soluble photoresist
p-substrate
Oxidation
Photoresist
Removal of exposed SiO2
p-substrate
Oxidation
Photo-resist
Removal of remaining photoresist
p-substrate
Oxidation
N-well formation using diffusion
p-substrate
Oxidation
n-well
Removal of remaining SiO2
p-substrate
n-well
Gate oxide and Polysilicon Layer
p-substrate
n-well
Thin gate
oxide
Polysilicon layer
Photolithography
p-substrate
n-well
Thin gate
oxide
Polysilicon layer
UV rays
Removal of soluble polysilicon
p-substrate
n-well
Gate oxide masking
p-substrate
n-well
Thick gate
oxide
Photolithography
p-substrate
n-well
UV rays
Removal of exposed gate oxide
p-substrate
n-well
Ion implantation of n+ dopants
p-substrate
n-well
n+ n+ n+
Ion implantation of p+ dopants
p-substrate
n-well
n+ n+ n+p+ p+ p+
(similar way)
Metallization
p-substrate
n-well
n+ n+ n+p+ p+ p+
(uses Aluminum)
Removal of excess metal
p-substrate
n-well
n+ n+ n+p+ p+ p+
Terminals: pMOS and nMOS
p-substrate
n-well
n+ n+ n+p+ p+ p+
B S G D D G S B

CMOS fabrication n well process