About MOSFET
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This presentation discusses Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). It describes the basic structure of an n-channel MOSFET including its four terminals - source, gate, drain, and substrate. The document outlines the two main types of MOSFETs - depletion mode and enhancement mode. Depletion mode MOSFETs have a channel already present between the source and drain when no voltage is applied to the gate, while enhancement mode MOSFETs do not form a channel until a positive voltage is applied to the gate. Common biasing configurations for MOSFETs like self bias, voltage divider bias, and drain feedback bias are also presented. The presentation concludes by discussing some applications of
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This document provides an introduction to transistors and MOSFETs. It begins by describing the invention of the transistor in 1947 and defining what a transistor is. It then discusses the main types of transistors - BJT and FET, including MOSFET and JFET. The rest of the document focuses on MOSFETs, explaining what they are, their terminals and symbols, types of MOSFETs like n-MOSFET and p-MOSFET, and how MOSFETs work and are fabricated through processes like photolithography, etching, diffusion, and oxidation. It includes diagrams of MOSFET structure and operation. In the end it briefly discusses CMOS fabrication process flow.
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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
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Metal Oxide Semiconductor Field Effect Transistors
- MOSFETs use a metal gate electrode placed on top of a thin insulating oxide layer to control the flow of electrons in a semiconductor material between source and drain terminals.
- The gate voltage controls the formation of an n-type or p-type conduction channel in the semiconductor. Increasing the gate voltage widens the channel, increasing current flow.
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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
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The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the basic structure of the MOSFET, including the source, gate, and drain terminals. It also discusses the different types of MOSFETs, such as n-channel and p-channel MOSFETs, as well as depletion and enhancement MOSFETs. The key characteristics of MOSFETs are summarized, including the different regions of operation depending on the voltages applied to the gate, source, and drain terminals. Common applications of MOSFETs in analog and digital circuits are also outlined.
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This document provides an overview of MOSFET modeling concepts including:
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About MOSFET
- 1. WELCOME TO MY PRESENTATION 1
- 2. 2
- 4. MOSFET • A field effect transistor (FET) that can be operated in the enhancement-mode is called a MOSFET. • There are 4 terminals : source (S), gate (G) and drain (D), Substrate (SS). 4
- 5. MOSFET Structure p-Si n+ L Source Gate Drain Field Oxide Gate Oxide Bulk (Substrate) 5
- 6. Types of Field Effect Transistors (The Classification) JFET MOSFET n-Channel JFET p-Channel JFET n-Channel EMOSFET p-Channel EMOSFET Enhancement MOSFET Depletion MOSFET n-Channel DMOSFET p-Channel DMOSFET FET 6
- 7. 7
- 8. Depletion Type •Channel region is already diffused between the Drain and Source • Deplete, or “pinch-off” the Channe 8
- 11. 11
- 12. 12
- 13. 13
- 14. • n-Channel MOSFET Schematic symbol Depletion MOSFET 14
- 15. • p-Channel MOSFET Schematic symbol Depletion MOSFET 15
- 16. Depletion MOSFET Bias • Gate bias • Self bias • voltage-divider bias • Zero bias 16
- 17. Self Bias Some formula : Self-biased configuration results in VGS=-IDRS 17
- 18. Voltage-divider bias Some formula : 2 )( )( TonGS onD VV I k VGS>VT, ID=k(VGS-VT)2 18
- 19. Enhancement MOSFET • Primary difference between depletion- type and enhancement-type is the absence of channel between Source and Drain terminals. N-channel enhancement-type MOSFET Schematic symbol 19
- 20. Enhancement Type • No channel region exists between the Drain and Source • “Invert” the region between the Drain and Source to induce a channel 20
- 22. • p-Channel MOSFET • Construction is reverse of n-channel DMOSFET. Enhancement MOSFET Schematic symbol 22
- 23. Enhancement MOSFET Bias • Gate bias • Voltage-divider bias • Drain-feedback bias 23
- 24. E-MOSFET Voltage-Divider Biasing • VGS=VG-IDRS • Where VG=R2xVDD/(R1+R2) • VDS=VDD-ID(RS+RD) 2 )( )( TonGS onD VV I k 24
- 25. E-MOSFET Feedback Biasing IG=0 V, VD=VG, VDS=VGS, VDS=VDD-IDRD, VGS=VDD-IDRD When ID=0 A: VGS=VDD When VGS=0 V: ID=VDD/RD 25
- 26. Applications of MOSFET • Digital integrated circuits such as microprocessors and memory devices contain thousands to millions of integrated MOSFET • logic gates and data storage • Switch mode power supplies, • Variable frequency drives • Radio systems use MOSFETs as oscillators, or mixers to convert frequencies. • Sound reinforcement and • Automobile sound systems 26
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- 30. JEFT vs MOSFET JEFT MOSFET 1. High input impedance 1. Very high input impedance 2. It can be operated only in depletion mode. 2. It can be operated both depletion and enhancement mode. 3. High gate current 3. Low gate current 4. High drain resistance 4. Low drain resistance 5. Conductivity is controlled by the reverse biasing of the gate 5. Conductivity is controlled by the carriers induced in the channel 6. Schematic symbol 6. Schematic symbol 7.Transconductance curve 7.Transconductance curve 30