Power mosfet characteristics
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This document discusses power MOSFETs, including their characteristics and advantages over bipolar junction transistors. Some key points: 1) Power MOSFETs can operate at high voltages up to 1400V and high currents up to 500A, with switching frequencies ranging from 10-100kHz depending on the device. 2) Power MOSFETs use a metal-oxide-semiconductor field-effect transistor design that allows the gate voltage to fully control the channel conductance. 3) Their on-resistance can be made very low, allowing them to operate efficiently at high power levels before breakdown occurs. This makes them well-suited for applications requiring high power switching.
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Mos transistor
This document discusses MOS transistor theory, including MOS structure, ideal and non-ideal I-V characteristics, capacitance models, and delay models. It describes how MOS transistors operate in different modes depending on terminal voltages and how carrier mobility and channel charge determine current in linear and saturation regions. Non-ideal effects like velocity saturation, body effect, and leakage currents are also covered. The document concludes with discussions of pass transistors, tri-state inverters, and using resistor-capacitor models to estimate delay.
MOSFET.ppt
This document discusses the operation and modeling of MOSFET transistors. It begins by describing the basic structure and operation of an n-type MOSFET. It then provides some important equations that model the inversion layer charge and threshold voltage. The document goes on to discuss modeling the transistor behavior in different regimes, including gradual channel approximation, sub-threshold behavior, and saturation. It also compares MOSFETs to BJTs and discusses factors that affect transistor performance such as mobility and threshold voltage control.
nature of MOSFET ,operation, characteristics curve
This document discusses the operation and modeling of MOSFET transistors. It begins by describing the basic structure and operation of an n-type MOSFET. It then provides some important equations that model the inversion layer charge and threshold voltage. The document goes on to discuss modeling the transistor behavior in different regimes, including gradual channel approximation, sub-threshold behavior, and saturation. It also compares MOSFETs to BJTs and discusses factors that affect transistor performance such as mobility and threshold voltage control.
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Power mosfet characteristics
- 1. POWER MOSFET CHARACTERISTICS Julius Edgar Lilienfeld Robert W. Bower PATENTED BY - INVENTED BY - MOSFET - Source Internet
- 2. 1440 V/400 A 10 kHz 1000 V/50 A 100 kHz 1200 V/300 A 100 kHz 1200 V/500 A 50 kHz TRANSISTOR FAMILY
- 3. G D S METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR It is combination of field-effect concept and MOS technology.
- 4. HOW MOSFET DIFFER FROM BJT ?
- 5. WHY WE NEED POWER MOSFET ? VDD VGS Large on-load resistance On increasing VGS more current flows This leads to high power dissipation in n-channel and breakdown occurs. In n-channel planar MOSFET
- 6. POWER MOSFET(PMOSFET) It consists of DIFFUSED METAL-OXIDE-SEMICONDUCTOR VGS GATESOURCE SOURCEMETAL SiO2 VDD n+ n+ n+ n+ P n- n- n+ n+ substrate DRAIN P On-resistance can be made low if short length is used for n-channel. npn BJT
- 7. PMOSFET CHARACTERISTICS VGS VDS ID R RD VG VDD Transfer characteristics Output characteristics Switching characteristics
- 8. TRANFER CHARACTERISTICS Variation of drain current ID as a function of gate source voltage VGS 2 4 6 8 10 12 ID(A) VGS(V) VGST Threshold voltage(VGST ) - The minimum positive voltage between gate and source to induce n-channel.
- 9. OUTPUT CHARACTERISTICS ActiveOhmic iD VDS A B Cut-off When VGS<VGST Drainsourcebreakdownvoltage Draincurrent(A) Drain-source voltage Low value of VDS curve is linear i.e. constant on-resistance RD. For given VGS on increasing VGS curve is flat i.e. drain current is constant. VGS is large, MOSFET turns on small VDSON. MOSFET acting as closed switch & driven into ohmic region (Saturation region in BJT). When device on PMOSFET curve traverse from cut-off to active region then to ohmic region & when turns off, takes backward journey from ohmic to cut-off region.
- 10. SWITCHING CHARACTERISTICS VG V1 t1 t VGS V1 VGSP VGST tdn tr tdf tf td ton ID t t Tdn is turn on delay time during which i/p capacitance charges to threshold voltage(VGST). Rise time(tr) – gate voltage rises to VGSP(voltage sufficient to drive the MOSFET) & drain current rises from zero to full-on current(ID). Total turn-on time (ton) = tdn + tr. tr can be reduced using low- impedance gate –drive source. Turn-off process starts at time t1. Turn-off delay time(tdf) – i/p capacitance discharges from overdrive gate voltage V1 to VGSP. Fall time(tf) – i/p capacitance discharges from VGSP to VGST & ID falls to zero. So, when VGS ≤VGST PMOSFET is turned-off.