This document discusses resistor implementations using MOSFETs, including using a single MOSFET and parallel MOSFETs. It also covers simple current sinks and sources using NMOS and PMOS transistors, and characterizes them by their output resistance and minimum voltage. Improved current sink designs are presented, including using feedback to increase output resistance and the cascode current sink. The document provides simulation examples and analysis to explain these circuit concepts.
Original Driver Mosfet IRS21814STRPBF IRS21814S 21814 SOP-14 New Internationa...AUTHELECTRONIC
Original Driver Mosfet IRS21814STRPBF IRS21814S 21814 SOP-14 New International Rectifier
https://authelectronic.com/original-driver-mosfet-irs21814strpbf-irs21814s-21814-sop-14-new-international-rectifier
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IRAUTHELECTRONIC
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IR
https://authelectronic.com/original-n-channel-mosfet-irfr3709ztrpbf-fr3709z-3709-fr3709-to-252-new-ir
Rec101 unit ii (part 2) bjt biasing and re modelDr Naim R Kidwai
The presentation covers BJT Biasing: Operating Point or Q point, Fixed-Bias, Emitter Bias, Voltage-Divider Bias, Collector Feedback bias, Emitter-Follower bias, common base bias, bias Stabilization and re model of CB/ CE/ CC configuration
Original Driver Mosfet IRS21814STRPBF IRS21814S 21814 SOP-14 New Internationa...AUTHELECTRONIC
Original Driver Mosfet IRS21814STRPBF IRS21814S 21814 SOP-14 New International Rectifier
https://authelectronic.com/original-driver-mosfet-irs21814strpbf-irs21814s-21814-sop-14-new-international-rectifier
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IRAUTHELECTRONIC
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IR
https://authelectronic.com/original-n-channel-mosfet-irfr3709ztrpbf-fr3709z-3709-fr3709-to-252-new-ir
Rec101 unit ii (part 2) bjt biasing and re modelDr Naim R Kidwai
The presentation covers BJT Biasing: Operating Point or Q point, Fixed-Bias, Emitter Bias, Voltage-Divider Bias, Collector Feedback bias, Emitter-Follower bias, common base bias, bias Stabilization and re model of CB/ CE/ CC configuration
Compact low power high slew-rate cmos buffer amplifier with power gating tech...VLSICS Design
A qualitative analysis of different parameters such as Phase noise, Slew rate and tranconductance by using
power gating reduction technique is presented. The circuit achieves the large driving capability by
employing simple comparators to sense the transients of the input to turn on the output stages, which are
statically off in the stable state. The effect of the different number of transistors and their topologies on the
phase noise and Slew rate is analyzed. Good agreement between qualitative and quantitative measurements
is observed. Scope of reducing of Noise and avoidance of Leakage due to various sources is discussed.
FGMOS BASED LOW-VOLTAGE LOW-POWER HIGH OUTPUT IMPEDANCE REGULATED CASCODE CUR...VLSICS Design
Floating Gate MOS (FGMOS) transistors can be very well implemented in lieu of conventional MOSFET
for design of a low-voltage, low-power current mirror. Incredible features of flexibility, controllability and
tunability of FGMOS yields better results with respect to power, supply voltage and output swing. This
paper presents a new current mirror designed with FGMOS which exhibit high output impedance, higher
current range, very low power dissipation and higher matching accuracy. It achieves current range of up to
1500 µA, high output impedance of 1.125 TΩ, bandwidth of 4.1 MHz and dissipates power as low as 10.56
µW. The proposed design has been simulated using Cadence Design Environment in 180 nm CMOS
process technology with +1.0 Volt single power supply
Design of Low Power & High Speed Comparator with 0.18μm Technology for ADC Ap...IJERA Editor
In Analog to Digital Converter (ADC), high speed comparator influences the overall performance of ADC directly. This paper presents the high speed & low power design of a CMOS comparator. Schematic design of this comparator is fabricated in a 0.18μm UMC Technology with 1.8V power supply and simulated in cadence Virtuoso. Simulation results are presented and it shows that this design can work under high speed of 0.8108 GHz. The design has a low offset voltage, low power dissipation 108.0318μw. In addition we have verified present results with schematic view design and also compared these results with earlier reported work and got improvement in this reported work.
DESIGN AND IMPLEMENTATION OF 10 BIT, 2MS/s SPLIT SAR ADC USING 0.18um CMOS TE...VLSICS Design
This paper focuses on Design and Implementation of 10 Bit, 2MS/s successive approximation Register (SAR) Analog to digital converter (ADC) using Split DAC architecture. This SAR ADC architecture is
designed and simulated using GPDK 0.18um CMOS technology. It consists of different blocks like sample
and hold, comparator, Successive Approximation Register (SAR) and Split Digital to analog converter(DAC). For each block of SAR ADC power is calculated. DAC is an important component within the SAR ADC. The charge redistribution DAC in a Split capacitor configuration has a total capacitance which is96.87% smaller compared to a conventional binary weighted design. Hence Split DAC gives an optimizedarchitecture and it consumes less power. Optimized design of DAC architecture ensures the accuracy ofthe components, which improves the performance of SAR ADC. Comparator constructed from resistances,capacitance and dependent voltage sources instead of MOS transistors. Dynamic range for SAR ADC
using split DAC is 60.19dB. The supply voltage is 1.2V. The total Power consumed by SAR ADC using
Split array DAC is 95.65114uW and SAR ADC using binary weighted capacitor DAC is 211.19084uW.
Design of a 45nm TIQ Comparator for High Speed and Low Power 4-Bit Flash ADCIDES Editor
The continued speed improvement of serial links
and appearance of new communication technologies, such as
ultra-wideband (UWB), have introduced increasing demands
on the speed and power specifications of high-speed low-tomedium
resolution analog-to-digital converters (ADCs).This
paper presents the design of high speed and ultra low power
comparator of a 4-bit ADC. The comparator used is Threshold
Inverter Quantization (TIQ) consuming less than 145μW power
with the input frequency of 1GHz and is designed using
standard CMOS (Complementary Metal Oxide
Semiconductor) technology. The power supply voltage is 0.7V
minimum which makes this design adaptable to wide variety
of System-on-Chip (SoC) applications. The complete design of
ADC is clockless which reduces the electromagnetic
interference and gives better modularity. The ADC is targeted
for 45nm as it was the mainstream CMOS technology, at the
beginning of this research. However, the circuit should be
portable to smaller feature size CMOS technologies with lower
supply voltages.
Asynchronous Processors - The Clock less FutureAkshit Arora
The synchronous processor chips of computers use a clock to time the entire chip. But this clock is also the cause of speed and power consumption headaches. Here is how an asynchronous chip overcomes these problems by eliminating the clock altogether.
A presentation by Akshit Arora and Ankit Goyal for Computer Science Architecture (UCS401) at Thapar University, Patiala
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
Original Power MOSFET IRFP140PBF IRFP140 IRFP140N 100V 33A TO-247 New Intern...AUTHELECTRONIC
Original Power MOSFET IRFP140PBF IRFP140 IRFP140N 100V 33A TO-247 New International Rectifier
https://authelectronic.com/original-power-mosfet-irfp140pbf-irfp140-irfp140n-100v-33a-to-247-new-international-rectifier