The attached narrated power point presentation explains the construction, working and applications of PN Junction Diodes. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
The CMOS fabrication process in VLSI.
CMOS (complementary metal-oxide-semiconductor) is the term usually used to describe the small amount of memory on a computer motherboard that stores the BIOS settings.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
The CMOS fabrication process in VLSI.
CMOS (complementary metal-oxide-semiconductor) is the term usually used to describe the small amount of memory on a computer motherboard that stores the BIOS settings.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
P-N Junction diode is a 2-terminal, 2-layer, single-junction semiconductor device made out of a single block of silicon or germanium, with one side doped with acceptor (p-type) impurity and the other side with donor (n-type) impurity
• Very important device with numerous applications like– Switch, Rectifier, Regulator, Voltage multiplier, Clipping,Clamping, etc.
Semiconductor Diode :
What is Semiconductor Diode?
How is it Work?
What are the Types?
Current Flow in Forward And Reverse Bios?
What is Light Emitting Diode (LED)?
What is Zener Diode?
and in aditional :
P-N Junction and its formation
Formation of Depletion Layer
External Biasing of P-N Junction
V-I Characteristics of P-N Junction
Zener Breakdown
Avalanche Breakdown
Comparison between Zener and Avalanche Breakdown
The attached narrated power point presentation explores the electromagnetic spectrum classification, attempts to explain the need for modulation and process of analog modulation. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
EST 200, Design Thinking in Automobile IndustryCKSunith1
The attached narrated power point presentation attempts a case study exploration of how automobile industry has benefited through the implementation of design thinking and innovation. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explains the construction, working and applications of bipolar junction transistors. The material will benefit KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation reviews the construction, working and applications of shift registers built using D Flipflops. The material will be useful for KTU second year students who prepare for the subject CSL 202, Digital Laboratory.
The attached narrated power point presentation explains the methods of oral and written communication which the design engineers use to communicate with the clients or the audience. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation reviews the construction, working and timing diagrams of ring and johnson counters as well as asynchronous and synchronous up, down, up/down and decade counters using popular flipflop ICs. The material will be useful for KTU B Tech second year students who prepare for the subject CSL 202, Digital Laboratory.
EST 200, Designing Triggers for Behavior ChangeCKSunith1
The attached narrated power point presentation mentions Shikakaeology,the Japanese method for behavioral change. The material will be useful for those who aspire to become design engineers.
EST 200, Communicating Designs GraphicallyCKSunith1
The attached narrated power point presentation mentions the methods adopted by design engineers to communicate their designs. The material focuses on graphical methods of design communication. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineeirng.
The attached narrated power point presentation mentions the different materials used for the construction of semiconductors. It offers structural and energy level explanation on the properties exhibited by the semiconductor materials. It also throws light on the structure and behaviour of a PN junction and use of PN junctions in active electronic components. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explores the merits and limitations of team work in design thinking. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
EST 200, Design Thinking in a Work Place.CKSunith1
The attached narrated power point stresses the need for introducing design thinking practices in a work place. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explains the construction and working of RS, D, JK, T and JK Master Slave Flipflops using Logic Gates. The material will be useful to KTU second year B Tech Computer Science and Engineering students who prepare for the subject CSL 202, Digital Laboratory.
EST 200, Convergent and Divergent ThinkingCKSunith1
The attached narrated power point presentation explores the various aspects and activities in divergent and convergent thinking and the necessity of divergent and convergent thinking in the design thinking process. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explores the implementation and benefits of design thinking at a work place. A few case studies are also included. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explains the principles process and frame work of design thinking. The material also mentions a few applications of design thinking. The material will be useful for KTU second year students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation discusses the different types of active components used in electronics engineering and the methods to identify active electronic components. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explains the working of multiplexers and demultiplexers and familiarises oneself with popular multiplexer, demultiplexer and decoder ICs. The material will be useful for KTU second year B Tech students in Computer Science and Engineering who prepare for the subject CSL 202, Digital Laboratory.
The attached narrated power point (with audio) presentation mentions the constructional features, different types of inductors, their ratings, methods for testing and precautions for handling. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explains the process of decision making for evaluation of design alternatives. The material will be useful for KTU B Tech second year Electronics and Communication Engineering students who prepare for the subject EST 200, Design and Engineering.
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
Dev Dives: Train smarter, not harder – active learning and UiPath LLMs for do...UiPathCommunity
💥 Speed, accuracy, and scaling – discover the superpowers of GenAI in action with UiPath Document Understanding and Communications Mining™:
See how to accelerate model training and optimize model performance with active learning
Learn about the latest enhancements to out-of-the-box document processing – with little to no training required
Get an exclusive demo of the new family of UiPath LLMs – GenAI models specialized for processing different types of documents and messages
This is a hands-on session specifically designed for automation developers and AI enthusiasts seeking to enhance their knowledge in leveraging the latest intelligent document processing capabilities offered by UiPath.
Speakers:
👨🏫 Andras Palfi, Senior Product Manager, UiPath
👩🏫 Lenka Dulovicova, Product Program Manager, UiPath
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
Accelerate your Kubernetes clusters with Varnish CachingThijs Feryn
A presentation about the usage and availability of Varnish on Kubernetes. This talk explores the capabilities of Varnish caching and shows how to use the Varnish Helm chart to deploy it to Kubernetes.
This presentation was delivered at K8SUG Singapore. See https://feryn.eu/presentations/accelerate-your-kubernetes-clusters-with-varnish-caching-k8sug-singapore-28-2024 for more details.
State of ICS and IoT Cyber Threat Landscape Report 2024 previewPrayukth K V
The IoT and OT threat landscape report has been prepared by the Threat Research Team at Sectrio using data from Sectrio, cyber threat intelligence farming facilities spread across over 85 cities around the world. In addition, Sectrio also runs AI-based advanced threat and payload engagement facilities that serve as sinks to attract and engage sophisticated threat actors, and newer malware including new variants and latent threats that are at an earlier stage of development.
The latest edition of the OT/ICS and IoT security Threat Landscape Report 2024 also covers:
State of global ICS asset and network exposure
Sectoral targets and attacks as well as the cost of ransom
Global APT activity, AI usage, actor and tactic profiles, and implications
Rise in volumes of AI-powered cyberattacks
Major cyber events in 2024
Malware and malicious payload trends
Cyberattack types and targets
Vulnerability exploit attempts on CVEs
Attacks on counties – USA
Expansion of bot farms – how, where, and why
In-depth analysis of the cyber threat landscape across North America, South America, Europe, APAC, and the Middle East
Why are attacks on smart factories rising?
Cyber risk predictions
Axis of attacks – Europe
Systemic attacks in the Middle East
Download the full report from here:
https://sectrio.com/resources/ot-threat-landscape-reports/sectrio-releases-ot-ics-and-iot-security-threat-landscape-report-2024/
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
Encryption in Microsoft 365 - ExpertsLive Netherlands 2024Albert Hoitingh
In this session I delve into the encryption technology used in Microsoft 365 and Microsoft Purview. Including the concepts of Customer Key and Double Key Encryption.
Software Delivery At the Speed of AI: Inflectra Invests In AI-Powered QualityInflectra
In this insightful webinar, Inflectra explores how artificial intelligence (AI) is transforming software development and testing. Discover how AI-powered tools are revolutionizing every stage of the software development lifecycle (SDLC), from design and prototyping to testing, deployment, and monitoring.
Learn about:
• The Future of Testing: How AI is shifting testing towards verification, analysis, and higher-level skills, while reducing repetitive tasks.
• Test Automation: How AI-powered test case generation, optimization, and self-healing tests are making testing more efficient and effective.
• Visual Testing: Explore the emerging capabilities of AI in visual testing and how it's set to revolutionize UI verification.
• Inflectra's AI Solutions: See demonstrations of Inflectra's cutting-edge AI tools like the ChatGPT plugin and Azure Open AI platform, designed to streamline your testing process.
Whether you're a developer, tester, or QA professional, this webinar will give you valuable insights into how AI is shaping the future of software delivery.
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
UiPath Test Automation using UiPath Test Suite series, part 3DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 3. In this session, we will cover desktop automation along with UI automation.
Topics covered:
UI automation Introduction,
UI automation Sample
Desktop automation flow
Pradeep Chinnala, Senior Consultant Automation Developer @WonderBotz and UiPath MVP
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Builder.ai Founder Sachin Dev Duggal's Strategic Approach to Create an Innova...Ramesh Iyer
In today's fast-changing business world, Companies that adapt and embrace new ideas often need help to keep up with the competition. However, fostering a culture of innovation takes much work. It takes vision, leadership and willingness to take risks in the right proportion. Sachin Dev Duggal, co-founder of Builder.ai, has perfected the art of this balance, creating a company culture where creativity and growth are nurtured at each stage.
3. 3
PN Junction
• P Type Material – Group IV semiconductor
material (Si, Ge) doped with group III
elements (B, In, Ga, etc.) – trivalent
impurity.
• N Type Material - Group IV semiconductor
material (Si, Ge) doped with group V
elements (P, As, Sb, Bi etc.) – pentavalent
impurity.
• P Type Material and N Type Material
joined together at one end.
4. 4
PN Junction
• Doped regions meet together to form a PN
Junction.
• Permit unidirectional current flow.
• Useful in the construction of diodes.
Anode Cathode
Current flow in one
direction
5. 5
Depletion Region
• Free electrons on the n side migrate/
diffuse across the junction to the p side.
• On the p side, free electrons are the
minority current carriers.
• Free electrons combine with holes shortly
after crossing over to the p side.
• A free electron leaves the n side and falls
into a hole on the p side, creates two ions
- a positive ion on the n side and a
negative ion on the p side.
6. 6
Depletion Region
• Ions are immobile, electric field created.
• As the process of diffusion continues, a
barrier potential is created, diffusion of
electrons from the n side to the p side
stops.
• Electrons diffusing from the n side sense a
large negative potential on the p side that
repels them back to the n side.
7. 7
Depletion Region
• Holes from the p side repelled back to the
p side by the positive potential on the n
side.
• Area where the positive and negative ions
are located called the depletion region.
• Word depletion used because the area
has been depleted of all charge carriers.
• Barrier potential approximately 0.7 V for Si
and 0.3 V for Ge.
8. 8
Barrier Potential
• Barrier potential stops diffusion of current
carriers.
• Depletion region also called space charge
region.
• Cannot be measured with a voltmeter.
9. 9
Depletion Region
Barrier Potential VB
stops carriers cross
the junction
Immobile Ions
Carriers diffuse
across the junction
due to
concentration
gradient.
10. 10
Biasing a PN Junction
• Application of voltage/current.
• Forward Bias and Reverse Bias.
• Forward-biasing allows current to flow
easily.
• Forward Biasing reduces the width of the
potential barrier.
• Reverse biasing impedes current flow,
only leakage current flows.
• Reverse Biasing increases the width of the
potential barrier.
12. 12
Forward Bias
• n material connected to the negative
terminal of the voltage source, V.
• p material is connected to the positive
terminal of the voltage source, V.
• Anode positive w.r.t cathode.
• Voltage source V repels free electrons in
the n side across the depletion zone and
into the p side.
13. 13
Forward Bias
• On the p side, the free electron combines
with a hole.
• Electron will then travel from hole to hole
as it is attracted to the positive terminal of
the voltage source.
• For every free electron entering the n side,
one electron leaves the p side.
15. 15
Reverse Bias
• Negative terminal of the voltage source
connected to the p -type semiconductor
material.
• Positive terminal of the voltage source
connected to the n –type semiconductor
material.
• Charge carriers in both sections pulled
away from the junction.
16. 16
Reverse Bias
• Free electrons on the n side pulled away
from the junction due to attraction of the
positive terminal of the voltage source.
• Holes in the p side pulled away from the
junction because of the attraction by the
negative terminal of the voltage source.
• Width of the depletion zone increases.
• Diode non-conducting, like an open
switch, ideally with infinite resistance.
17. 17
Leakage Current
• Reverse-biased diode conducts a small
amount of current, called leakage current.
• Leakage current mainly due to minority
current carriers in both sides of the
junction.
• Minority current carriers are holes in the n
side and free electrons in the p side.
• Minority current carriers due to thermal
energy producing a few electron-hole
pairs.
18. 18
Leakage Current
• Increase in the temperature of the diode
increases the leakage current in the diode.
• Minority current carriers move in opposite
direction to the direction provided with
forward bias.
• Also called reverse saturation current.
19. 19
V/I Characteristics
Cut in Voltage
0.7 V for Si, 0.3 V for Ge
Diode Current rises
sharply above cut in
voltage.
Very small current
flows until VBR
Avalanche
Breakdown
Non-Linear
20. 20
V/I Characteristics
• Forward current rises sharply above cut in
voltage.
• Current that flows prior to breakdown is
mainly due to thermally produced minority
current carriers.
• Leakage current increases mainly with
temperature, relatively independent of
changes in reverse-bias voltage.
21. 21
V/I Characteristics
• Slight increase in reverse current with
increases in the reverse voltage due to
surface leakage current.
• Surface leakage current exists since there
are many holes on the edges of a silicon
crystal due to unfilled covalent bonds.
• Holes on the crystal edges provide a path
for a few electrons along the surfaces of
the crystal.
24. 24
Avalanche Action
• Avalanche occurs when the reverse-bias
becomes excessive.
• Thermally produced free electrons on the
p side accelerated by the voltage source
to very high speeds as they move through
the diode.
• Electrons collide with valence electrons in
other orbits, sets them free.
25. 25
Avalanche Action
• Free valence electrons accelerated to very
high speeds, dislodges more valence
electrons.
• Process is cumulative; called avalanche
effect.
• When breakdown voltage, VBR , reached,
reverse current, IR , increases sharply.
• Diodes not to be operated in breakdown
region.
• For rectifier diodes VBR > 50 V.
26. 26
Diode Parameters
• DC Resistance of a forward biased diode
(VF - forward voltage drop and IF - the
forward current).
• Bulk resistance of a forward biased diode
(ΔV - change in diode voltage produced by
the change in diode current, ΔI).
F
F
F
V
R
I
27. 27
Diode Approximations
• First Approximation:
- Ideal Diode Approximation.
- Forward-biased diode as a closed switch
with a voltage drop of zero volts.
- Reverse-biased diode as an open
switch with zero current.
29. 29
Diode Approximations
• Second Approximation:
- forward-biased diode as an ideal diode
in series with a battery.
- accounts for cut in voltage.
- reverse-biased diode as an open
switch.
31. 31
Third Approximation
• Includes the bulk resistance, the
resistance of the p and n materials.
• Bulk resistance dependent on the doping
level and the size of the p and n materials.
• Bulk resistance causes the forward
voltage across a diode to increase slightly
with increases in the diode current.
• Resistance across the open switch is a
high leakage resistance for the reverse-
bias condition.
33. 33
Diode Ratings
• Breakdown Voltage – voltage at which
avalanche occurs.
• Average Forward Current - maximum
allowable average current that the diode
can handle safely.
• Maximum Forward Surge Current -
maximum instantaneous current the diode
can handle safely from a single pulse (eg:
capacitor current).
34. 34
Diode Ratings
• Maximum Reverse Current -
• Chance of diode failure if ratings
exceeded.
• Current limiting resistor in series to limit
diode current to safe values.
36. 36
Zener Diode
• A special diode optimized for operation in
the breakdown region.
• Connected in parallel with the load of the
power supply.
• Zener voltage remains nearly constant
despite load current variations.
• Under forward bias, zener diode acts like
an ordinary silicon diode.
37. 37
Zener Diode
• Under reverse-bias region, a small reverse
leakage current flows until breakdown
voltage is reached.
• After breakdown voltage, reverse current
through the zener increases sharply,
reverse current called zener current.
• Breakdown voltage remains nearly
constant as the zener current increases.
• Zener diodes used as voltage regulators.
38. 38
Zener Power Rating
• Power dissipated by the zener diode:
VZ - Zener Voltage, IZ - Zener Current.
• Both zener and avalanche breakdown
occur in zener diodes.
39. 39
Zener Breakdown
• Reverse Voltage ≤ 6 V applied across
zener diode, narrow depletion region.
• Intense electric field of the order of 3 x 105
V/cm across the narrow depletion region.
• Electric field strong enough, to pull
electrons from the valence band to the
conduction band (free electrons) – Field
Ionisation.
• Large number of free electrons constitute
a large reverse current – zener effect.
• Occurs in heavily doped diodes.
40. 40
Avalanche Breakdown
• In zener diodes with breakdown voltage >
6V, wider depletion region.
• Minority carriers accelerate as reverse
bias increases, their kinetic energy
increases.
• Accelerated carriers collide with stationary
atoms, impart energy to valence electrons.
• Valence electrons jump into conduction
band – free electrons and get accelerated.
41. 41
Avalanche Breakdown
• Free electrons collide with and knock
out more valence electrons –
avalanche multiplication.
• Large reverse current flows due to
avalanche effect – impact ionisation.
• Occurs in lightly doped diodes.
• V/I characteristics not sharp in
breakdown region.
