This document discusses the Schottky diode, a semiconductor diode with a low forward voltage drop and very fast switching speeds. It forms a metal-semiconductor junction, using a metal like molybdenum or platinum in contact with an N-type semiconductor like silicon. This creates a Schottky barrier and results in fast switching without the charge storage and recovery time of a conventional PN junction diode. Key advantages are voltage drops as low as 0.15V, no reverse recovery time, and operation at frequencies from MHz to GHz. Applications include rectification, switching, and protection circuits.

1. SCHOTTKY DIODE
CORPORATE INSTITUTE OF SCIENCE &
TECHNOLOGY , BHOPAL
DEPARTMENT OF ELECTRONICS & COMMUNICATIONS
BY- PROF. RAKESH k. JHA

2. SCHOTTKY BARRIER DIODE
•The Schottky diode (named after German physicist Walter H.
Schottky; also known as hot carrier diode) is a semiconductor diode
with a low forward voltage drop and a very fast switching action.
•When current flows through a diode there is a small voltage drop
across the diode terminals. A normal silicon diode has a voltage drop
between 0.6–1.7 volts, while a Schottky diode voltage drop is
between approximately 0.15–0.45 volts. This lower voltage drop can
provide higher switching speed and better system efficiency.

3. CONSTRUCTION
 A metal–semiconductor junction is formed between a metal and a
semiconductor, creating a Schottky barrier (instead of a
semiconductor–semiconductor junction as in conventional diodes).
 Typical metals used are molybdenum, platinum, chromium or
tungsten; and the semiconductor would typically be N-type
silicon.
 The metal side acts as the anode and N-type semiconductor acts
as the cathode of the diode. This Schottky barrier results in both
very fast switching and low forward voltage drop.
Metal N-type
material

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5. WORKING
 The electrons of N-side having low energy level than
that of metal . So electrons cant cross the junction
barrier called
schottky barrier.
 In Forward bias the electrons in N side gain enough
energy to cross the junction barrier and plunge into the
metal with very large energy .They are called it hot
carriers and diode is called hot carrier diode.
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6. 6VI characteristics of Schottky diode

7. REVERSE RECOVERY TIME
 The most important difference between the p-n and
Schottky diode is reverse recovery time, when the diode
switches from conducting to non-conducting state. Where
in a p-n diode the reverse recovery time can be in the
order of hundreds of nanoseconds and less than 100 ns
for fast diodes, Schottky diodes do not have a recovery
time, as there is nothing to recover from (i.e. no charge
carrier depletion region at the junction).

8. SOME IMPORTANT POINTS ABOUT SCHOTTKY DIODE
 Schottky diode is metal to semiconductor junction.
 Schottky diode is a majority carrier device unlike to normal pn
junction diode
 It does not have charge storage region there for very fast
speed
 Semiconductor used is usually N-type.
 Semiconductor region is lightly doped.
 It is operated at high frequencies from few MHZ to GHZ range.

9. LIMITATIONS
 The most evident limitations of Schottky diodes are
the relatively low reverse voltage ratings for silicon-
metal Schottky diodes, typically 50 V and below, and
a relatively high reverse leakage current. Some
higher-voltage designs are available; 200V is
considered a high reverse voltage.
 Reverse leakage current, because it increases with
temperature, leads to a thermal instability issue. This
often limits the useful reverse voltage to well below
the actual rating.
 While higher reverse voltages are achievable, they
would be accompanied by higher forward voltage
drops, comparable to other types; such a Schottky
diode would have no advantage

10. APPLICATIONS
 Voltage clamping and clipping circuits
 Reverse current and discharge protection
 Rectify high frequencies signal.
 Low power TTL logic.
 As a switching devices.
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