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The document discusses the tunnel diode. It describes how Leo Esaki invented the tunnel diode in 1958 after discovering that heavily doped semiconductors exhibit negative resistance due to electron tunneling. Esaki received the Nobel Prize in Physics in 1973 for this discovery. The tunnel diode operates based on the quantum mechanical principle of tunneling, where electrons can directly flow across the small depletion region. Applications of the tunnel diode include use in oscillators, logic circuits, and memory storage due to properties like fast switching speeds, high-speed operation, and low power consumption. However, tunnel diodes cannot be mass produced and do not provide isolation between input and output.

















