The attached narrated power point presentation explains the construction, working and applications of bipolar junction transistors. The material will benefit KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
So this applied voltage generate the electric field within the device and by controlling these electric field we can control the flow of current through the device.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
This presentation gives a lot of information about
Semiconductor Devices.This is presented by Rajesh Kumar Sangani from Rajiv Gandhi University of Knowledge Technologies,Basar Dist
Adilabad,A.P,India.
The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
So this applied voltage generate the electric field within the device and by controlling these electric field we can control the flow of current through the device.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
This presentation gives a lot of information about
Semiconductor Devices.This is presented by Rajesh Kumar Sangani from Rajiv Gandhi University of Knowledge Technologies,Basar Dist
Adilabad,A.P,India.
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
In this configuration base is common for both input and output, input signal is applied between emitter and base terminals; and output is collected between collector and base terminals. Copy the link given below and paste it in new browser window to get more information on Common Emitter Configuration:- http://www.transtutors.com/homework-help/electrical-engineering/transistors/common-emitter-configuration.aspx
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
FIELD EFFECT TRANSISTERS (FET)
Types of Field Effect Transistors
i) Junction field effect transistor (JFET)
(ii) Metal oxide semiconductor field effect transistor (MOSFET)
Here you find the information about Transistors. And know about
-> Type Of Transistor:
->Region of Transistor:
->P-N Junction Diodes
->Transistor application
->Transistor Connections
Limitation:
->Future of transistor:
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
In this configuration base is common for both input and output, input signal is applied between emitter and base terminals; and output is collected between collector and base terminals. Copy the link given below and paste it in new browser window to get more information on Common Emitter Configuration:- http://www.transtutors.com/homework-help/electrical-engineering/transistors/common-emitter-configuration.aspx
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
FIELD EFFECT TRANSISTERS (FET)
Types of Field Effect Transistors
i) Junction field effect transistor (JFET)
(ii) Metal oxide semiconductor field effect transistor (MOSFET)
Here you find the information about Transistors. And know about
-> Type Of Transistor:
->Region of Transistor:
->P-N Junction Diodes
->Transistor application
->Transistor Connections
Limitation:
->Future of transistor:
Transistors are the basic building blocks o almost all the electronic devices and circuits the hardware world is constantly dependent upon the transistor for its basic circuit and PCB designing and having a deep knowledge of transistor constructions, its types and working is essential for the development of Electronic circuits. This ppt is a basic and brief introduction to the construction and types of Transistors also addressed as BJT(Bipolar Junction Transistors) used for digital PCB and logic designing.
The attached narrated power point presentation explores the electromagnetic spectrum classification, attempts to explain the need for modulation and process of analog modulation. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
EST 200, Design Thinking in Automobile IndustryCKSunith1
The attached narrated power point presentation attempts a case study exploration of how automobile industry has benefited through the implementation of design thinking and innovation. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation reviews the construction, working and applications of shift registers built using D Flipflops. The material will be useful for KTU second year students who prepare for the subject CSL 202, Digital Laboratory.
The attached narrated power point presentation explains the construction, working and applications of PN Junction Diodes. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explains the methods of oral and written communication which the design engineers use to communicate with the clients or the audience. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation reviews the construction, working and timing diagrams of ring and johnson counters as well as asynchronous and synchronous up, down, up/down and decade counters using popular flipflop ICs. The material will be useful for KTU B Tech second year students who prepare for the subject CSL 202, Digital Laboratory.
EST 200, Designing Triggers for Behavior ChangeCKSunith1
The attached narrated power point presentation mentions Shikakaeology,the Japanese method for behavioral change. The material will be useful for those who aspire to become design engineers.
EST 200, Communicating Designs GraphicallyCKSunith1
The attached narrated power point presentation mentions the methods adopted by design engineers to communicate their designs. The material focuses on graphical methods of design communication. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineeirng.
The attached narrated power point presentation mentions the different materials used for the construction of semiconductors. It offers structural and energy level explanation on the properties exhibited by the semiconductor materials. It also throws light on the structure and behaviour of a PN junction and use of PN junctions in active electronic components. The material will be useful for KTU first year students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explores the merits and limitations of team work in design thinking. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
EST 200, Design Thinking in a Work Place.CKSunith1
The attached narrated power point stresses the need for introducing design thinking practices in a work place. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explains the construction and working of RS, D, JK, T and JK Master Slave Flipflops using Logic Gates. The material will be useful to KTU second year B Tech Computer Science and Engineering students who prepare for the subject CSL 202, Digital Laboratory.
EST 200, Convergent and Divergent ThinkingCKSunith1
The attached narrated power point presentation explores the various aspects and activities in divergent and convergent thinking and the necessity of divergent and convergent thinking in the design thinking process. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explores the implementation and benefits of design thinking at a work place. A few case studies are also included. The material will be useful for KTU second year B Tech students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation explains the principles process and frame work of design thinking. The material also mentions a few applications of design thinking. The material will be useful for KTU second year students who prepare for the subject EST 200, Design and Engineering.
The attached narrated power point presentation discusses the different types of active components used in electronics engineering and the methods to identify active electronic components. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explains the working of multiplexers and demultiplexers and familiarises oneself with popular multiplexer, demultiplexer and decoder ICs. The material will be useful for KTU second year B Tech students in Computer Science and Engineering who prepare for the subject CSL 202, Digital Laboratory.
The attached narrated power point (with audio) presentation mentions the constructional features, different types of inductors, their ratings, methods for testing and precautions for handling. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The attached narrated power point presentation explains the process of decision making for evaluation of design alternatives. The material will be useful for KTU B Tech second year Electronics and Communication Engineering students who prepare for the subject EST 200, Design and Engineering.
Securing your Kubernetes cluster_ a step-by-step guide to success !KatiaHIMEUR1
Today, after several years of existence, an extremely active community and an ultra-dynamic ecosystem, Kubernetes has established itself as the de facto standard in container orchestration. Thanks to a wide range of managed services, it has never been so easy to set up a ready-to-use Kubernetes cluster.
However, this ease of use means that the subject of security in Kubernetes is often left for later, or even neglected. This exposes companies to significant risks.
In this talk, I'll show you step-by-step how to secure your Kubernetes cluster for greater peace of mind and reliability.
Generating a custom Ruby SDK for your web service or Rails API using Smithyg2nightmarescribd
Have you ever wanted a Ruby client API to communicate with your web service? Smithy is a protocol-agnostic language for defining services and SDKs. Smithy Ruby is an implementation of Smithy that generates a Ruby SDK using a Smithy model. In this talk, we will explore Smithy and Smithy Ruby to learn how to generate custom feature-rich SDKs that can communicate with any web service, such as a Rails JSON API.
Smart TV Buyer Insights Survey 2024 by 91mobiles.pdf91mobiles
91mobiles recently conducted a Smart TV Buyer Insights Survey in which we asked over 3,000 respondents about the TV they own, aspects they look at on a new TV, and their TV buying preferences.
Accelerate your Kubernetes clusters with Varnish CachingThijs Feryn
A presentation about the usage and availability of Varnish on Kubernetes. This talk explores the capabilities of Varnish caching and shows how to use the Varnish Helm chart to deploy it to Kubernetes.
This presentation was delivered at K8SUG Singapore. See https://feryn.eu/presentations/accelerate-your-kubernetes-clusters-with-varnish-caching-k8sug-singapore-28-2024 for more details.
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
Kubernetes & AI - Beauty and the Beast !?! @KCD Istanbul 2024Tobias Schneck
As AI technology is pushing into IT I was wondering myself, as an “infrastructure container kubernetes guy”, how get this fancy AI technology get managed from an infrastructure operational view? Is it possible to apply our lovely cloud native principals as well? What benefit’s both technologies could bring to each other?
Let me take this questions and provide you a short journey through existing deployment models and use cases for AI software. On practical examples, we discuss what cloud/on-premise strategy we may need for applying it to our own infrastructure to get it to work from an enterprise perspective. I want to give an overview about infrastructure requirements and technologies, what could be beneficial or limiting your AI use cases in an enterprise environment. An interactive Demo will give you some insides, what approaches I got already working for real.
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
Key Trends Shaping the Future of Infrastructure.pdfCheryl Hung
Keynote at DIGIT West Expo, Glasgow on 29 May 2024.
Cheryl Hung, ochery.com
Sr Director, Infrastructure Ecosystem, Arm.
The key trends across hardware, cloud and open-source; exploring how these areas are likely to mature and develop over the short and long-term, and then considering how organisations can position themselves to adapt and thrive.
4. 4
Transistor Invention
• First transistor called a point-contact
transistor on December 23, 1947.
• Walter H. Brattain and John Bardeen
demonstrated the amplifying action of first
transistor at Bell Telephone Laboratories.
• Was the predecessor to the junction
transistor invented by Shockley in 1948.
• Shared Nobel Prize in Physics in 1956.
6. 6
Bipolar Junction Transistor
• Three terminal device – Emitter, Base and
Collector.
• Two p-n junctions – Emitter-Base junction
and Collector-Base junction.
• PNP and NPN transistors.
• Current controlled – base current controls
the device.
• Can be used in amplifiers or as switches.
• Four regions of operation.
• Three Configurations – Common Emitter,
Common Base and Common Collector.
7. 7
Bipolar Junction Transistor
• Three doped regions.
• Base narrow region
sandwiched between the
larger collector and
emitter regions.
• Emitter region heavily
doped.
• Emitter injects current
carriers into the base.
• Base region very thin
and lightly doped.
Electrons are the majority
carriers in a n type material.
Holes are the majority
carriers in a p type material.
8. 8
Bipolar Junction Transistor
• Most of the current carriers injected into
the base from the emitter pass on to the
collector, do not flow out of the base lead.
• Collector region moderately doped, largest
of all three regions.
• Collector region attracts carriers injected
into the base region.
• Collector region the largest region, must
dissipate more heat than emitter or base
regions.
9. 9
Doping in Transistor Structures
Emitter
Heavily
Doped
Base
Lightly
Doped
Collector
Moderately
Doped
e
b
c
Thin Largest
Two types of carriers – holes and electrons, hence bipolar.
10. 10
Depletion Regions
(Unbiased)
• Diffusion of electrons
from both n regions
into the p -type base
causes a barrier
potential for both p-n
junctions.
• e-b depletion region
narrower than the c-b
depletion region due
to difference in doping
levels.
Barrier Potential = 0.7 V
11. 11
Depletion Regions
(Unbiased)
• Heavy doping in the emitter region.
• Penetration into the n material minimal
due to the availability of many free
electrons.
• Fewer free electrons due to moderate
doping level in the collector region.
• Depletion layer penetrate deeper into the
collector region.
12. 12
Bipolar Junction Transistors
Can two back to back connected pn
junction diodes function as a npn
transistor?
Base width higher?
Recombination
in the base?
13. 13
Bipolar Junction Transistors
• Two back-to-back pn diodes can't function
as a single BJT.
• Transistor operation not achieved with
standalone pn diodes which conduct a
negligible currents under reverse bias.
• Excess electrons from the p side of the
forward biased diode can not be swept to
the p side of the reverse biased diode
through the metal wire in a "BJT like diode
configuration".
14. 14
Bipolar Junction Transistors
• Excess electrons from the p side of the
forward biased diode are swept to the
power supply (stronger pull) providing a
voltage bias to the common terminal of the
diodes.
• For transistor functionality, semiconductor
only thin lightly doped Base region
required.
• With a metal introduced in the path (two
back-to-back diodes), no BJT functionality
possible.
15. 15
Transistor Operating Regions
Operating
Region
Emitter –
Base
Junction
Collector –
Base
Junction
Applications
Active
Region
Forward
Biased
Reverse
Biased
Amplifiers
Saturation
Region
Forward
Biased
Forward
Biased Switches
(on/off)
Cut off
Region
Reverse
Biased
Reverse
Biased
Inverse Active
Region
Reverse
Biased
Forward
Biased
-
16. 16
Transistor Currents
• For a transistor amplifier, emitter-base
junction forward-biased, and collector-
base junction reverse-biased.
• Common connection for voltage sources
at the base lead.
• Electrons in the n -type emitter repelled
into the base by the negative terminal of
the emitter supply voltage.
17. 17
Transistor Currents
• Base is very thin and lightly doped.
• Only a few electrons combine with holes in
the base.
• Small current flowing out of the base lead
called recombination current.
• Free electrons injected into the base must
fall into a hole before they can flow out the
base lead.
18. 18
Transistor Currents
• Most of the emitter-injected electrons pass
through the base region to the collector
region.
• A small voltage creates a strong electric
field in the collector-base junction to attract
almost all free electrons injected into the
base.
• Positive collector-base voltage attracts
free electrons in the p - type base to the
collector side before they recombine with
holes in the base.
19. 19
Early Effect/Base Width
Modulation
• As reverse bias across the collector-base
junction increases, depletion region
penetrates more into the base.
• Thin base lightly doped, penetration into
the base region larger than into the
collector, effective base width decreases/
modulated.
• Punch through – large reverse bias,
depletion region penetrates the entire
base, transistor action lost, large current
flow damage.
21. 21
Common Base Configuration
• Collector current nearly identical to the
emitter current.
IC ≈ IE
RC, RE for Current Limiting.
RC
RE
RC
RE
Common Base Configuration
Base is Common
22. 22
Common Base Current Gain
• dc alpha (αdc) describes how closely the
emitter and collector currents are in a
common base circuit.
• In most cases, the dc alpha 0.99 or
greater.
• The thinner and more lightly doped the
base, the closer the value of alpha to one.
26. 26
Common Emitter Current Gain
• dc current gain of a transistor in common-
emitter connection called dc beta.
• Again,
• Or,
DC Equivalent of a Transistor
33. 33
Common Collector Configuration
Collector common to
input and output
Emitter Follower.
No phase inversion for the
output.
For Impedance Matching.
Voltage Gain ≈ 1.
Used in cascade amplifiers.
34. 34
Common Collector Current Gain
• Common Collector Current Gain:
• Again
and
E
dc
B
I
I
1
dc dc
1
1
dc
dc
38. 38
Brief Comparison
Characteristic CB CE CC
Input Resistance Low Medium High
Output Resistance Very
High
High Low
Voltage Gain High Medium Low
Current Gain Low Medium High
42. 42
Transistor Testing
• Identify whether pnp or npn.
• Identify transistor leads.
• Use of Ohmmeter/Multimeter.
• Consider the transistor as two diodes.
• Emitter-base and collector-base junctions
forward biased – low resistance.
• Emitter-base and collector-base junctions
reverse biased – high resistance.
• Emitter to collector – high resistance.