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Intel 45nm high-k metal-gate press release
Intel has achieved a breakthrough in transistor technology by developing high-k + metal gate transistors for its 45 nm process. These transistors significantly reduce leakage power and are the biggest advancement since polysilicon gate MOS transistors were introduced in the 1960s. Intel has made working 45 nm microprocessors using these new transistors, which will deliver higher performance and greater energy efficiency. Intel's 45 nm products are on track to begin production in late 2007 with three factories manufacturing 45 nm by early 2008.
