The document discusses various layout optimizations that can be made to standard cells to reduce both internal power and area. These include removing "hammer head" structures to decrease transistor length, moving gate contacts over active areas to reduce transistor height, and reducing source/drain capacitances to decrease dynamic current without impacting speed. Post-layout simulations showed a new D flip-flop design with these optimizations reduced internal power by 20% while maintaining clock-to-Q delay, and improved saturation current by 15-50% while reducing area by 20%.