This document discusses the evolution of transistor technology, focusing on the development of tri-gate transistors. It describes how tri-gate transistors allow Moore's Law to continue by addressing issues like short channel effects that arise at smaller scales. The document outlines different types of multigate transistors and explains the advantages of tri-gate transistors, such as reduced power dissipation and better control over leakage current. It also provides some examples of how small 22nm transistors are in comparison to everyday objects.

1. By
Ruchira Shivsharan

2. Introduction
Moore’s law
Types of Multigate Transistor
Planar double gate transistor
FlexFET
FinFET
Tri-Gate transistor
Gate all around FET
3D transistor symbol and pin function
Difference between planar and 3d transistor
Key points
3D tri-gate transistor benefits
Fun Facts
Application

3. Tri-Gate transistors, the first to be truly three-dimensional, mark a
major revolution in the Semiconductor industry. The semiconductor
industry continues to push technological innovation to keep pace
with Moore’s Law, shrinking transistors so that ever more can be
packed on a chip. However, at future technology nodes, the ability to
shrink transistors becomes more and more problematic, in part due
to worsening short channel effects and an increase in parasitic
leakages with scaling of the gate-length dimension. In this regard Tri-gate
transistor architecture makes it possible to continue Moore’s
law at 22nm and below without a major transistor redesign. The
physics, technology and the advantages of the device is briefly
discussed in this paper.

4. “”THE NUMBER OF TRANSISTORS INCORPORATED IN
A CHIP WILL APPROXIMATELY DOUBLE EVERY 24
MONTHS.“
—GORDON
MOORE

5. Planar double-gate transistor
Flexfet
FinFET
Tri-gate transistor
Gate-all-around (GAA) FET

9. Highly scalable due to its sub-lithographic channel length.
Top gate MOSFET
Bottom gate JFET
The top and bottom gates provide transistor operation.
The top gate operation affects the bottom gate operation and vice
versa.
 Flexfet was developed, and is manufactured, by American
Semiconductor.

10.  Based on the earlier DELTA (single-gate) transistor
design.
 The conducting channel is wrapped by a thin silicon
"fin”.
 The thickness of the fin determines the effective
channel length of the device.
 The Wrap-around gate structure provides a better
electrical control over the channel .
 Helps in reducing the leakage current and
overcoming other short channel effects.

11. The gate material surrounds the channel region on all sides.
Gate-all-around FETs can have two or four effective gates.
Gate-all-around FETs have been successfully built around
a silicon nanowire. and etched InGaAs nanowires

12. Reduction
in power
dissipation
Increased
pathway for
electrical
signals
Drives 20%
more
current
than
traditional
planar
transistors
High
switching
speed
Better
control
over
leakage
current due
to 3D
structure
High
performanc
e with
reduced
size

13. Also called as multigate device or multiple gate
field-effect transistor (MuGFET) refers to
a MOSFET
 incorporates more than one gate into a single
device. The multiple gates may be controlled by a
single gate electrode,
in the multiple gate surfaces act electrically as a
single gate, or by independent gate electrodes.

20. Key Points
•Intel is introducing revolutionary Tri-Gate transistors on its 22 nm logic
technology
•Tri-Gate transistors provide an unprecedented combination of improved
performance and energy efficiency
•22 nm processors using Tri-Gate transistors, code-named Ivy Bridge, are now
demonstrated working in systems
•Intel is on track for 22 nm production in 2H ‘11, maintaining a 2-year cadence
for introducing new technology generations
•This technological breakthrough is the result of Intel’s highly coordinated
research-development-manufacturing pipeline
•Tri-Gate transistors are an important innovation needed to continue Moore’s
Law

22. FUN FACTS: EXACTLY HOW SMALL (AND COOL) IS 22
NANOMETERS?
•The original transistor built by Bell Labs in 1947 was large enough that it was pieced
together by hand. By contrast, more than 100 million 22nm tri-gate transistors could
fit onto the head of a pin.
•More than 6 million 22nm tri-gate transistors could fit in the period
•A 22nm tri-gate transistor's gates that are so small, you could fit more than 4000 of
them across the width of a human hair.
•If a typical house shrunk as transistors have, you would not be able to see a house
without a microscope. To see a 22nm feature with the naked eye, you would have to
enlarge a chip to be larger than a house.
•Compared to Intel's first microprocessor, the 4004, introduced in 1971, a 22nm CPU
runs over 4000 times as fast and each transistor uses about 5000 times less energy.
The price per transistor has dropped by a factor of about 50,000.
•A 22nm transistor can switch on and off well over 100 billion times in one second. It
would take you around 2000 years to flick a light switch on and off that many times.

23. The shorter the gate, the faster the computer can operate. While the
new 3D transistors will have a gate length of 22 nanometers
Computers implementing 3D silicon transistors will not only be able
to run faster, but should also weigh less, and generate less heat than
their present-day flat-transistor-using counterparts.