This document provides an overview of Intel's 45nm manufacturing technology and upcoming 45nm products. Key points include:
- Intel has demonstrated 45nm "Penryn" and "Silverthorne" microprocessors using a revolutionary high-k metal gate transistor technology for improved performance and reduced power leakage.
- Intel's 45nm process uses fully lead-free and halogen-free packaging technologies.
- Yield for 45nm production is on track. Shipments of 45nm CPUs are projected to exceed 65nm CPUs starting in the second half of 2008.
- 45nm CPUs will have higher transistor density and counts than comparable 65nm chips while maintaining the same die size, enabling improved performance and additional features.
This document discusses optimizing Hadoop workloads through hardware and software configuration. Key recommendations include using dual-socket servers with the latest Intel Xeon processors for better performance and scalability. Sufficient memory, SSDs, and an optimized Linux distribution can also improve throughput and reduce costs. Proper configuration of Hadoop masters, slaves, and middleware helps ensure workload demands are met efficiently.
How to create a high quality, fast texture compressor using ISPC Gael Hofemeier
This document discusses Intel's Fast ISPC Texture Compressor for compressing textures using DirectX 11 formats like BC7 and BC6H. It provides an overview of the DX11 texture compression formats and algorithms used in the Fast ISPC Texture Compressor. The compressor uses techniques like PCA initialization, iterative refinement, and fast partition pruning to quickly search for optimal block partitioning, endpoints, and weights. It achieves high quality compression through the use of SIMD acceleration with Intel's ISPC compiler.
How Intel Is Managing IT In A DownturnUmair Mohsin
Intel managed IT through the economic downturn by focusing on driving employee and business productivity while continuing IT efficiencies. This included refreshing mobile clients to enable work flexibility and drive productivity through improved performance and manageability. Intel optimized its client refresh strategy through a total cost of ownership analysis and adopted a three-year refresh cycle. Regular refreshes improved security, support costs, and allowed new capabilities like remote management of the 100% Intel vPro managed fleet.
The document discusses Intel's HPC portfolio and roadmap update. It provides an overview of the new Intel Xeon E5-2600 v2 processor family, highlighting its efficiency, performance, and security features. The Xeon E5-2600 v2 is expected to deliver up to 30% more performance using the same or less power compared to the previous generation. It offers up to 12 cores, 30MB of cache, and support for the latest I/O and memory technologies to provide powerful and efficient processing for modern data centers.
The document discusses Intel technologies for high performance computing. It provides an overview of Intel's product families targeted at HPC workloads, including the Xeon E5-2600 v3 and E7-8800 v3 processor families. It also reviews some basics of HPC, including factors that impact performance such as memory bandwidth and latency. The document emphasizes that data movement between the CPU and memory hierarchy can often be a bottleneck, and that optimizing for high floating point operations per memory access is important.
JDE & Peoplesoft 3 | John Schiff | JDE World Technology Expanding Your World.pdfInSync2011
The document outlines Oracle's general product direction for JD Edwards World. It provides information on Oracle's roadmap for JD Edwards World releases, including A9.3, and describes planned enhancements to applications, functionality, and technologies. However, the document notes that the roadmap is subject to change and is not a commitment by Oracle to deliver specific features. It also directs readers to Oracle support documents for additional information on JD Edwards World products and resources.
This document discusses Intel's platform updates for mission critical, expandable, and entry level server segments. It highlights Intel's Xeon processor families that power servers in these segments, including the E7-8800, E5-4600, E5-2600, and E3-1200 series. It also mentions the Intel 7500, 7510/7512, and C200/C600 chipsets that support these server platforms.
This document discusses optimizing Hadoop workloads through hardware and software configuration. Key recommendations include using dual-socket servers with the latest Intel Xeon processors for better performance and scalability. Sufficient memory, SSDs, and an optimized Linux distribution can also improve throughput and reduce costs. Proper configuration of Hadoop masters, slaves, and middleware helps ensure workload demands are met efficiently.
How to create a high quality, fast texture compressor using ISPC Gael Hofemeier
This document discusses Intel's Fast ISPC Texture Compressor for compressing textures using DirectX 11 formats like BC7 and BC6H. It provides an overview of the DX11 texture compression formats and algorithms used in the Fast ISPC Texture Compressor. The compressor uses techniques like PCA initialization, iterative refinement, and fast partition pruning to quickly search for optimal block partitioning, endpoints, and weights. It achieves high quality compression through the use of SIMD acceleration with Intel's ISPC compiler.
How Intel Is Managing IT In A DownturnUmair Mohsin
Intel managed IT through the economic downturn by focusing on driving employee and business productivity while continuing IT efficiencies. This included refreshing mobile clients to enable work flexibility and drive productivity through improved performance and manageability. Intel optimized its client refresh strategy through a total cost of ownership analysis and adopted a three-year refresh cycle. Regular refreshes improved security, support costs, and allowed new capabilities like remote management of the 100% Intel vPro managed fleet.
The document discusses Intel's HPC portfolio and roadmap update. It provides an overview of the new Intel Xeon E5-2600 v2 processor family, highlighting its efficiency, performance, and security features. The Xeon E5-2600 v2 is expected to deliver up to 30% more performance using the same or less power compared to the previous generation. It offers up to 12 cores, 30MB of cache, and support for the latest I/O and memory technologies to provide powerful and efficient processing for modern data centers.
The document discusses Intel technologies for high performance computing. It provides an overview of Intel's product families targeted at HPC workloads, including the Xeon E5-2600 v3 and E7-8800 v3 processor families. It also reviews some basics of HPC, including factors that impact performance such as memory bandwidth and latency. The document emphasizes that data movement between the CPU and memory hierarchy can often be a bottleneck, and that optimizing for high floating point operations per memory access is important.
JDE & Peoplesoft 3 | John Schiff | JDE World Technology Expanding Your World.pdfInSync2011
The document outlines Oracle's general product direction for JD Edwards World. It provides information on Oracle's roadmap for JD Edwards World releases, including A9.3, and describes planned enhancements to applications, functionality, and technologies. However, the document notes that the roadmap is subject to change and is not a commitment by Oracle to deliver specific features. It also directs readers to Oracle support documents for additional information on JD Edwards World products and resources.
This document discusses Intel's platform updates for mission critical, expandable, and entry level server segments. It highlights Intel's Xeon processor families that power servers in these segments, including the E7-8800, E5-4600, E5-2600, and E3-1200 series. It also mentions the Intel 7500, 7510/7512, and C200/C600 chipsets that support these server platforms.
Playing low FPS games is never enjoyable. Learn how to approach game optimization and utilize industry optimization tools. Come join us for a live optimization workflow tutorial with XXX game development studio using the Intel® Graphics Performance Analyzers
Dr. Jochen Rode, Practice Manager Internet-of-Things at SAP Research, presented "Manufacturing & the Internet of Things: ICT Trends and Challenges for Enterprises" (FInES Workshop at Aalborg)
Технологии Intel для виртуализации сетей операторов связиCisco Russia
This document discusses Intel technologies for network operator virtualization. It summarizes Intel's positioning of products like Xeon processors, Ethernet controllers, and SSDs to help transform telecom networks through network functions virtualization (NFV). NFV aims to reduce costs and speed service deployment by consolidating network infrastructure on standard high-volume servers, switches and storage.
This document discusses Intel's AppUp developer program. It provides an overview of Intel's global presence, the growth of the app economy, and Intel's vision for the AppUp program. The AppUp program currently has over 70,000 developers from 202 countries who have created over 5,000 apps, resulting in over 810,000 app downloads. The document outlines some of the key developer and consumer features of the AppUp program.
This slidedeck from STAG Software, highlights that Good testing is really about questioning - who uses what, conditions that govern the behavior, the key attributes and so on.
Как выбрать оптимальную серверную архитектуру для создания высокоэффективных ЦОДNick Turunov
This document discusses the benefits of updating server infrastructure for businesses. It recommends refreshing servers every 3-4 years to improve energy efficiency and reduce support costs over time. The Intel Xeon 5500 series processors are presented as offering significant performance gains, lower power usage, and space savings compared to older single-core and dual-core servers when used for server refresh projects.
Intel has achieved a breakthrough in transistor technology by developing high-k + metal gate transistors for its 45 nm process. These transistors significantly reduce leakage power and are the biggest advancement since polysilicon gate MOS transistors were introduced in the 1960s. Intel has made working 45 nm microprocessors using these new transistors, which will deliver higher performance and greater energy efficiency. Intel's 45 nm products are on track to begin production in late 2007 with three factories manufacturing 45 nm by early 2008.
HIGH-K DEVICES BY ALD FOR SEMICONDUCTOR APPLICATIONSJonas Sundqvist
This document summarizes research on high-k dielectric devices fabricated using atomic layer deposition (ALD) for semiconductor applications presented by researchers from the Fraunhofer Institute for Photonic Microsystems. It discusses the history of ALD deposition of high-k materials like TiO2 and laminates of Ta2O5 and HfO2 for capacitor applications in the 1990s. It also summarizes the development of TiN/ZrO2-based capacitors and research on ALD HfO2 for emerging ferroelectric memory devices. Finally, it discusses the fabrication of 3D capacitor structures using ALD with densities over 250 nF/mm2 and possibilities for 3D integration of ferroelectric HfO2
Intel is launching new 45nm processors featuring revolutionary hafnium-based high-k metal gate transistors, representing the biggest advancement in transistor design in 40 years. This includes 16 new server and desktop processors. Intel is executing on delivering higher performance and greater energy efficiency across servers, desktops, and laptops through its 45nm process and new processor families.
GLOBALFOUNDRIES is the only pure-play foundry currently producing chips using the 32nm HKMG process. They are ramping production of the "Llano" chip, the first HKMG product in the industry, which can be seen in laptop demos at their booth and in stores that month. GLOBALFOUNDRIES is leading the industry in ramping HKMG production volume ahead of other foundries and offers two 28nm platforms - 28nm-SLP for low power needs and 28nm-HPP for high performance. They are providing extensive design enablement including design kits and a multi-project wafer program to drive the 28nm transition and define their 20nm technology and production plans.
Paul Ahern - Copper/ low-K Interconnect TechnologyPaul Ahern
This document reviews the development of interconnect technology in integrated circuits from aluminum to copper and low-k dielectrics. It discusses how copper replaced aluminum as the interconnect material due to its higher conductivity and electromigration resistance. Copper is patterned using the damascene process where it is deposited into trenches etched into a dielectric. As feature sizes shrank below 180nm, the dielectric constant of the interlayer dielectric (ILD) needed to be reduced to prevent delays, leading to the use of low-k materials like carbon-doped oxides and porous oxides with dielectric constants as low as 2.1.
This document discusses the achievements and challenges of MOSFETs with high-k gate dielectrics. As silicon dioxide scales thinner for Moore's Law, it allows excessive gate leakage currents due to quantum tunneling. Replacing silicon dioxide with high-k dielectric materials can help address this issue while continuing scaling. However, using high-k dielectrics introduces new challenges including high threshold voltages when paired with polysilicon gates. Replacing the polysilicon with a metal gate can help address issues of fermi level pinning and reduce mobility degradation. Intel achieved a 20% improvement in transistor switching speed by implementing high-k dielectric HfO2 and a metal gate in their 45nm transistors.
The document discusses 45nm transistor properties. It describes how 45nm transistors were developed using high-k dielectrics and metal gates to replace silicon dioxide. This allowed for reduced leakage current and increased drive current. 45nm processors from Intel, AMD, and others are discussed. Key advantages of 45nm transistors include higher computational ability, greater power efficiency, and less power leakage.
This is the presentation that was shared by Nilesh Ranpura and Vineeth Mathramkote at CDNLIVE 2015. The session briefs about the implementation challenges and covers the solution approach and how to achieve results
The document describes the structure and operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). It details the three main components: the gate, source, and drain electrodes separated by a thin gate oxide layer. Depending on the gate voltage relative to the threshold voltage, the MOSFET can be in one of three operating modes - cutoff, linear, or saturation - determining whether current flows between the source and drain. Enhancement mode MOSFETs require a gate voltage to turn on, functioning like a normally open switch, while depletion mode MOSFETs require a gate voltage to turn off, functioning like a normally closed switch.
This document summarizes a seminar presentation on high-k dielectric devices. It begins by explaining the problems with further scaling silicon dioxide gate dielectrics due to tunneling currents. It then introduces high-k dielectric materials, which have a higher dielectric constant, allowing for thicker dielectric layers with equivalent capacitance. The document discusses issues with compatibility between polysilicon gates and high-k dielectrics, leading to the use of metal gates. It presents the high-k dielectric - metal gate solution adopted by Intel and others, which reduces gate leakage currents and increases performance. Finally, it discusses future opportunities in using high-k dielectrics with non-silicon substrates like germanium.
This document discusses ultra-large scale integration (ULSI) circuits and semiconductor manufacturing processes. It introduces ULSI and its applications. It then summarizes the key steps in the IC fabrication process, including crystal growth, thin film deposition, oxidation, etching, lithography and metallization. Finally, it discusses future trends in ULSI, such as following Moore's Law to continue increasing transistor density, performance and functionality through advances in device physics, materials and technology to shrink dimensions below physical limits.
1. FinFETs allow for independent control of transistor gates, enabling new low-power circuit techniques like unusual logic styles and dual-Vdd circuits.
2. Simulation shows these FinFET circuit techniques can reduce total power consumption in ISCAS'85 benchmarks by up to 80% compared to traditional static CMOS designs.
3. FinFETs also enable architectural optimizations like variation-tolerant SRAM and novel non-volatile reconfigurable logic that could provide over an order of magnitude improvements in density and performance.
Presentation gives an insight into Moore's law and it's successful 50 years.
An account on what Moore's law is, how we keep pace with Moore's law, and what future holds for it is detailed out in the slides.
The document discusses the history and development of transistors from their invention in 1947 to modern 3D transistors. It describes how Moore's Law of transistor scaling led to the development of 3D tri-gate transistors to overcome limitations of planar transistors. The document explains how 3D transistors provide better performance than planar transistors through conducting channels on three sides of a vertical fin structure. It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.
Playing low FPS games is never enjoyable. Learn how to approach game optimization and utilize industry optimization tools. Come join us for a live optimization workflow tutorial with XXX game development studio using the Intel® Graphics Performance Analyzers
Dr. Jochen Rode, Practice Manager Internet-of-Things at SAP Research, presented "Manufacturing & the Internet of Things: ICT Trends and Challenges for Enterprises" (FInES Workshop at Aalborg)
Технологии Intel для виртуализации сетей операторов связиCisco Russia
This document discusses Intel technologies for network operator virtualization. It summarizes Intel's positioning of products like Xeon processors, Ethernet controllers, and SSDs to help transform telecom networks through network functions virtualization (NFV). NFV aims to reduce costs and speed service deployment by consolidating network infrastructure on standard high-volume servers, switches and storage.
This document discusses Intel's AppUp developer program. It provides an overview of Intel's global presence, the growth of the app economy, and Intel's vision for the AppUp program. The AppUp program currently has over 70,000 developers from 202 countries who have created over 5,000 apps, resulting in over 810,000 app downloads. The document outlines some of the key developer and consumer features of the AppUp program.
This slidedeck from STAG Software, highlights that Good testing is really about questioning - who uses what, conditions that govern the behavior, the key attributes and so on.
Как выбрать оптимальную серверную архитектуру для создания высокоэффективных ЦОДNick Turunov
This document discusses the benefits of updating server infrastructure for businesses. It recommends refreshing servers every 3-4 years to improve energy efficiency and reduce support costs over time. The Intel Xeon 5500 series processors are presented as offering significant performance gains, lower power usage, and space savings compared to older single-core and dual-core servers when used for server refresh projects.
Intel has achieved a breakthrough in transistor technology by developing high-k + metal gate transistors for its 45 nm process. These transistors significantly reduce leakage power and are the biggest advancement since polysilicon gate MOS transistors were introduced in the 1960s. Intel has made working 45 nm microprocessors using these new transistors, which will deliver higher performance and greater energy efficiency. Intel's 45 nm products are on track to begin production in late 2007 with three factories manufacturing 45 nm by early 2008.
HIGH-K DEVICES BY ALD FOR SEMICONDUCTOR APPLICATIONSJonas Sundqvist
This document summarizes research on high-k dielectric devices fabricated using atomic layer deposition (ALD) for semiconductor applications presented by researchers from the Fraunhofer Institute for Photonic Microsystems. It discusses the history of ALD deposition of high-k materials like TiO2 and laminates of Ta2O5 and HfO2 for capacitor applications in the 1990s. It also summarizes the development of TiN/ZrO2-based capacitors and research on ALD HfO2 for emerging ferroelectric memory devices. Finally, it discusses the fabrication of 3D capacitor structures using ALD with densities over 250 nF/mm2 and possibilities for 3D integration of ferroelectric HfO2
Intel is launching new 45nm processors featuring revolutionary hafnium-based high-k metal gate transistors, representing the biggest advancement in transistor design in 40 years. This includes 16 new server and desktop processors. Intel is executing on delivering higher performance and greater energy efficiency across servers, desktops, and laptops through its 45nm process and new processor families.
GLOBALFOUNDRIES is the only pure-play foundry currently producing chips using the 32nm HKMG process. They are ramping production of the "Llano" chip, the first HKMG product in the industry, which can be seen in laptop demos at their booth and in stores that month. GLOBALFOUNDRIES is leading the industry in ramping HKMG production volume ahead of other foundries and offers two 28nm platforms - 28nm-SLP for low power needs and 28nm-HPP for high performance. They are providing extensive design enablement including design kits and a multi-project wafer program to drive the 28nm transition and define their 20nm technology and production plans.
Paul Ahern - Copper/ low-K Interconnect TechnologyPaul Ahern
This document reviews the development of interconnect technology in integrated circuits from aluminum to copper and low-k dielectrics. It discusses how copper replaced aluminum as the interconnect material due to its higher conductivity and electromigration resistance. Copper is patterned using the damascene process where it is deposited into trenches etched into a dielectric. As feature sizes shrank below 180nm, the dielectric constant of the interlayer dielectric (ILD) needed to be reduced to prevent delays, leading to the use of low-k materials like carbon-doped oxides and porous oxides with dielectric constants as low as 2.1.
This document discusses the achievements and challenges of MOSFETs with high-k gate dielectrics. As silicon dioxide scales thinner for Moore's Law, it allows excessive gate leakage currents due to quantum tunneling. Replacing silicon dioxide with high-k dielectric materials can help address this issue while continuing scaling. However, using high-k dielectrics introduces new challenges including high threshold voltages when paired with polysilicon gates. Replacing the polysilicon with a metal gate can help address issues of fermi level pinning and reduce mobility degradation. Intel achieved a 20% improvement in transistor switching speed by implementing high-k dielectric HfO2 and a metal gate in their 45nm transistors.
The document discusses 45nm transistor properties. It describes how 45nm transistors were developed using high-k dielectrics and metal gates to replace silicon dioxide. This allowed for reduced leakage current and increased drive current. 45nm processors from Intel, AMD, and others are discussed. Key advantages of 45nm transistors include higher computational ability, greater power efficiency, and less power leakage.
This is the presentation that was shared by Nilesh Ranpura and Vineeth Mathramkote at CDNLIVE 2015. The session briefs about the implementation challenges and covers the solution approach and how to achieve results
The document describes the structure and operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). It details the three main components: the gate, source, and drain electrodes separated by a thin gate oxide layer. Depending on the gate voltage relative to the threshold voltage, the MOSFET can be in one of three operating modes - cutoff, linear, or saturation - determining whether current flows between the source and drain. Enhancement mode MOSFETs require a gate voltage to turn on, functioning like a normally open switch, while depletion mode MOSFETs require a gate voltage to turn off, functioning like a normally closed switch.
This document summarizes a seminar presentation on high-k dielectric devices. It begins by explaining the problems with further scaling silicon dioxide gate dielectrics due to tunneling currents. It then introduces high-k dielectric materials, which have a higher dielectric constant, allowing for thicker dielectric layers with equivalent capacitance. The document discusses issues with compatibility between polysilicon gates and high-k dielectrics, leading to the use of metal gates. It presents the high-k dielectric - metal gate solution adopted by Intel and others, which reduces gate leakage currents and increases performance. Finally, it discusses future opportunities in using high-k dielectrics with non-silicon substrates like germanium.
This document discusses ultra-large scale integration (ULSI) circuits and semiconductor manufacturing processes. It introduces ULSI and its applications. It then summarizes the key steps in the IC fabrication process, including crystal growth, thin film deposition, oxidation, etching, lithography and metallization. Finally, it discusses future trends in ULSI, such as following Moore's Law to continue increasing transistor density, performance and functionality through advances in device physics, materials and technology to shrink dimensions below physical limits.
1. FinFETs allow for independent control of transistor gates, enabling new low-power circuit techniques like unusual logic styles and dual-Vdd circuits.
2. Simulation shows these FinFET circuit techniques can reduce total power consumption in ISCAS'85 benchmarks by up to 80% compared to traditional static CMOS designs.
3. FinFETs also enable architectural optimizations like variation-tolerant SRAM and novel non-volatile reconfigurable logic that could provide over an order of magnitude improvements in density and performance.
Presentation gives an insight into Moore's law and it's successful 50 years.
An account on what Moore's law is, how we keep pace with Moore's law, and what future holds for it is detailed out in the slides.
The document discusses the history and development of transistors from their invention in 1947 to modern 3D transistors. It describes how Moore's Law of transistor scaling led to the development of 3D tri-gate transistors to overcome limitations of planar transistors. The document explains how 3D transistors provide better performance than planar transistors through conducting channels on three sides of a vertical fin structure. It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.
The document discusses 3D transistors, which employ a single gate stacked on top of two vertical gates to allow three times the surface area for electron flow without increasing gate size. This overcomes issues with further scaling planar transistors. 3D transistors provide fully depleted operation and tighter channel control through conducting channels on three sides of a vertical fin. This enables high drive currents and improved switching performance. 3D transistors can operate at lower voltages than planar transistors, reducing power consumption by over 50% while maintaining or improving performance. They will allow continued transistor scaling per Moore's Law and are needed for future generations of chips.
There are several types of field effect transistors (FETs) that are classified based on their construction and operation:
- JFETs operate using only one type of charge carrier and have either an n-channel or p-channel. The gate voltage controls the drain current.
- MOSFETs also come in n-channel or p-channel varieties and include depletion mode and enhancement mode types. Depletion mode MOSFETs operate in depletion mode like JFETs when the gate-source voltage is less than or equal to 0 and in enhancement mode when it is greater than 0. Enhancement mode MOSFETs only allow drain current when the gate-source voltage exceeds the threshold voltage.
-
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intel PDF 32nm Technology Update Mark Bohrfinance6
This document provides a summary of Intel's 32nm technology. It discusses:
1) Intel being the first to demonstrate working 32nm processors and having its 32nm process on track for production readiness in Q4 2009.
2) Both CPU and SoC versions of Intel's 32nm process being available.
3) Intel's strength as an integrated device manufacturer allowing it to continue delivering new process technologies every two years.
This document discusses the evolution of transistor technology, focusing on the development of tri-gate transistors. It describes how tri-gate transistors allow Moore's Law to continue by addressing issues like short channel effects that arise at smaller scales. The document outlines different types of multigate transistors and explains the advantages of tri-gate transistors, such as reduced power dissipation and better control over leakage current. It also provides some examples of how small 22nm transistors are in comparison to everyday objects.
This document contains information about Embree ray tracing kernels. It discusses how Embree provides highly optimized ray tracing kernels to accelerate rendering performance for applications. Embree supports the latest CPUs and instruction sets and contains features like support for triangles, subdivision surfaces, and displacement mapping. It also contains performance results showing Embree achieving 1.5-6x speedups over other renderers on Intel Xeon and Xeon Phi platforms.
Driving Industrial InnovationOn the Path to ExascaleIntel IT Center
This document discusses driving industrial innovation through high performance computing (HPC). It summarizes Intel's progress in HPC technologies including processors, coprocessors, fabrics, and software. Examples are given of how HPC is transforming industries like automotive design at Audi. The top supercomputer is highlighted as using Intel Xeon and Xeon Phi processors. The document envisions continuing innovation to achieve exascale computing and connect more people through technology.
Lynn Comp - Intel Big Data & Cloud Summit 2013 (2)IntelAPAC
This document discusses architecting cloud infrastructure for the future. It addresses requirements through workload optimized technologies, composable resources, and software defined infrastructure. Workload optimized technologies match different workloads with optimized server, storage, and network technologies. Composable resources allow flexible, efficient data centers through modular compute, memory, storage, and fabric resources that can be pooled and shared. Software defined infrastructure involves re-architecting the network through software defined networking and re-architecting storage through software defined storage.
Software-defined Visualization, High-Fidelity Visualization: OpenSWR and OSPRayIntel® Software
This document discusses software-defined and high-fidelity visualization rendering techniques that run exclusively on CPUs. It introduces OpenSWR, an open-source software rasterizer that provides a drop-in replacement for OpenGL, and OSPRay, a ray tracing library that is not limited by legacy APIs. OpenSWR implements a subset of OpenGL to work with existing visualization applications and focuses on performance through threading and vectorization. OSPRay allows for more flexibility in rendering capabilities but requires more effort for existing apps to use. Both aim to provide scalable, flexible CPU-based rendering that can run on various system types and sizes.
This document discusses optimizing Hadoop workloads through hardware and software configuration. Key recommendations include using dual-socket servers with the latest Intel Xeon processors for better performance and scalability. Sufficient memory, SSDs, and an optimized Linux distribution can also improve throughput and reduce costs. Proper configuration of Hadoop masters, slaves, and middleware helps ensure workload demands are met efficiently.
The document discusses Intel's Open Image Denoise (OIDN) library, an open source denoising solution for lightmaps in the Unity game engine. It begins with an agenda for the talk and provides an overview of OIDN, including examples of its C++ API. It then discusses how OIDN can improve lightmap baking performance in Unity. The document contains several legal disclaimers and notices regarding Intel technologies.
The document discusses Intel's Network Builders program, which aims to accelerate software-defined infrastructure adoption through open standards and platforms. It does this by investing in strong ecosystems, committing to open source, and leveraging Intel's technology leadership. The program enables partners through technical resources, matchmaking opportunities, and marketing support. It also works with network operators on proofs of concept and trials. The goal is to move the industry from early SDN/NFV trials to commercial deployments through this ecosystem collaboration.
TDC2018SP | Trilha IA - Inteligencia Artificial na Arquitetura Inteltdc-globalcode
This document contains several legal notices and disclaimers from Intel regarding their products. No license is granted to any intellectual property and Intel assumes no liability relating to the sale and use of their products. Intel products are not intended for medical or life critical applications. Specifications and descriptions are subject to change without notice.
AI & Computer Vision (OpenVINO) - CPBR12Jomar Silva
This document discusses Intel's compiler optimizations. It states that Intel's compilers may optimize Intel microprocessors differently than non-Intel microprocessors. Some optimizations like SSE2, SSE3, and SSSE3 instructions are designed for Intel microprocessors. Intel does not guarantee the availability, functionality, effectiveness of optimizations on non-Intel microprocessors. The document advises checking product guides for specific instruction set coverage. It provides a notice revision date of August 4, 2011.
DPDK Summit - 08 Sept 2014 - Intel - Networking Workloads on Intel ArchitectureJim St. Leger
Venky Venkatesan presents information on the Data Plane Development Kit (DPDK) including an overview, background, methodology, and future direction and developments.
Explore, design and implement threading parallelism with Intel® Advisor XEIntel IT Center
The document discusses Intel Advisor XE, a tool that enables parallelism and threading design. It allows users to quickly prototype threading options, project scaling on larger systems, and find synchronization errors before implementation. The tool's approach involves analyzing applications, designing parallelism, tuning, and checking implementations. It aims to help users make best use of multicore and manycore systems with hundreds of cores.
This document provides a roadmap for Intel's desktop, mobile, and datacenter products from the second half of 2013 through the first quarter of 2014. It outlines planned processor and chipset releases, including Ivy Bridge, Haswell, and Bay Trail architectures. The document also contains legal disclaimers regarding the provision of information, product warranties, mission critical applications, product specifications, and characterization of engineering samples.
E5 Intel Xeon Processor E5 Family Making the Business Case Intel IT Center
This presentation highlights cloud computing advantages of the Intel® Xeon® processor E5 family and helps you make the business case for investing. Includes access to an ROI calculator.
HPC DAY 2017 | Accelerating tomorrow's HPC and AI workflows with Intel Archit...HPC DAY
HPC DAY 2017 - http://www.hpcday.eu/
Accelerating tomorrow's HPC and AI workflows with Intel Architecture
Atanas Atanasov | HPC solution architect, EMEA region at Intel
This document contains several legal disclaimers and notices regarding Intel products and technologies. It states that information in the document is provided in connection with Intel products, and that no license is granted to any intellectual property. It also disclaims warranties and liability. The document notes that product plans and figures are preliminary and subject to change, and that errata may exist in products.
Optimizing Net Interest Margin (NIM) in the Financial Sector (With Examples).pdfshruti1menon2
NIM is calculated as the difference between interest income earned and interest expenses paid, divided by interest-earning assets.
Importance: NIM serves as a critical measure of a financial institution's profitability and operational efficiency. It reflects how effectively the institution is utilizing its interest-earning assets to generate income while managing interest costs.
A toxic combination of 15 years of low growth, and four decades of high inequality, has left Britain poorer and falling behind its peers. Productivity growth is weak and public investment is low, while wages today are no higher than they were before the financial crisis. Britain needs a new economic strategy to lift itself out of stagnation.
Scotland is in many ways a microcosm of this challenge. It has become a hub for creative industries, is home to several world-class universities and a thriving community of businesses – strengths that need to be harness and leveraged. But it also has high levels of deprivation, with homelessness reaching a record high and nearly half a million people living in very deep poverty last year. Scotland won’t be truly thriving unless it finds ways to ensure that all its inhabitants benefit from growth and investment. This is the central challenge facing policy makers both in Holyrood and Westminster.
What should a new national economic strategy for Scotland include? What would the pursuit of stronger economic growth mean for local, national and UK-wide policy makers? How will economic change affect the jobs we do, the places we live and the businesses we work for? And what are the prospects for cities like Glasgow, and nations like Scotland, in rising to these challenges?
Enhancing Asset Quality: Strategies for Financial Institutionsshruti1menon2
Ensuring robust asset quality is not just a mere aspect but a critical cornerstone for the stability and success of financial institutions worldwide. It serves as the bedrock upon which profitability is built and investor confidence is sustained. Therefore, in this presentation, we delve into a comprehensive exploration of strategies that can aid financial institutions in achieving and maintaining superior asset quality.
Fabular Frames and the Four Ratio ProblemMajid Iqbal
Digital, interactive art showing the struggle of a society in providing for its present population while also saving planetary resources for future generations. Spread across several frames, the art is actually the rendering of real and speculative data. The stereographic projections change shape in response to prompts and provocations. Visitors interact with the model through speculative statements about how to increase savings across communities, regions, ecosystems and environments. Their fabulations combined with random noise, i.e. factors beyond control, have a dramatic effect on the societal transition. Things get better. Things get worse. The aim is to give visitors a new grasp and feel of the ongoing struggles in democracies around the world.
Stunning art in the small multiples format brings out the spatiotemporal nature of societal transitions, against backdrop issues such as energy, housing, waste, farmland and forest. In each frame we see hopeful and frightful interplays between spending and saving. Problems emerge when one of the two parts of the existential anaglyph rapidly shrinks like Arctic ice, as factors cross thresholds. Ecological wealth and intergenerational equity areFour at stake. Not enough spending could mean economic stress, social unrest and political conflict. Not enough saving and there will be climate breakdown and ‘bankruptcy’. So where does speculative design start and the gambling and betting end? Behind each fabular frame is a four ratio problem. Each ratio reflects the level of sacrifice and self-restraint a society is willing to accept, against promises of prosperity and freedom. Some values seem to stabilise a frame while others cause collapse. Get the ratios right and we can have it all. Get them wrong and things get more desperate.
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In a tight labour market, job-seekers gain bargaining power and leverage it into greater job quality—at least, that’s the conventional wisdom.
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OJP data from firms like Vicinity Jobs have emerged as a complement to traditional sources of labour demand data, such as the Job Vacancy and Wages Survey (JVWS). Ibrahim Abuallail, PhD Candidate, University of Ottawa, presented research relating to bias in OJPs and a proposed approach to effectively adjust OJP data to complement existing official data (such as from the JVWS) and improve the measurement of labour demand.
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1. 45nm Product Press Briefing
Stephen L. Smith
Corporate Vice President
Director of Group Operations
Digital Enterprise Group
1
2. Risk Factors
Today’s presentation contains forward-looking
statements. All statements made that are not
historical facts are subject to a number of risks and
uncertainties, and actual results may differ
materially. Please refer to our most recent
Earnings Release and our most recent Form 10-Q
or 10-K filing available on our website for more
information on the risk factors that could cause
actual results to differ.
2
4. More Legal Disclaimers
Intel processor numbers are not a measure of performance. Processor numbers
differentiate features within each processor family, not across different processor families.
See www.intel.com/products/processor_numbers for details.
Performance tests and ratings are measured using specific computer systems and / or
components and reflect the approximate performance of Intel products as measured by
those tests. Any difference in system hardware or software design or configuration may
affect actual performance. Buyers should consult other sources of information to evaluate
the performance of systems or components they are considering purchasing. For more
information on performance tests and on the performance of Intel products, visit
http://www.intel.com/performance/
Intel may make changes to specifications, release dates and product descriptions at any
time, without notice. Intel, Core and the Intel logo are trademarks of Intel Corporation in
the U.S. and other countries
4
5. How can Intel achieve 10X performance over time?
Deliver Parallel Computing
Design Power Efficient Architectures
Focus on Platform and Usage Models
13.90 in
2006
Estimated Average of SPECint_rate_base2000
Normalized Performance vs. initial Intel®
Pentium® 4 Processor
and SPECfp_rate_base2000
DUAL/MULTI-CORE
PERFORMANCE
5.25 In
2005
10X
SINGLE CORE
PERFORMANCE
3X
1.00
2008+
2004
2000
FORECAST
Source: Intel SPEC_rate_base2000 used due to historical
SPEC, SPECint, SPECfp are trademarks of SPEC. nature of the chart
See http://www.spec.org for more information
Estimates as of September 2007
5
7. 45nm Status
1st generation revolutionary high-k + metal gate transistors
for improved performance and reduced leakage power
Working “Penryn” microprocessors were first demonstrated in
January ’07 and “Silverthorne” microprocessors in April ’07
Intel’s 45nm processors are 100% lead-free
Intel 45nm CPUs will convert to halogen-free packaging
technology by the end of 2008
Intel’s 45nm process technology will be described in more
detail at the International Electron Devices Meeting (10-12 Dec’’07)
(10- Dec
45nm High-k = Fundamental, Game-Changing Technology
7
10. 45nm Advantage
Intel® Xeon® Processor 5300 series Intel® Xeon® Processor 5400 series
(Clovertown) (Harpertown)
65nm 45nm Hi-k
* *
107 mm2 107 mm2
2* 2*
143 mm 143 mm
582m Transistors 820m Transistors
8 MB Cache 12 MB Cache
*Source: Intel
Die image size proportion is approximate
10
11. Enhanced Intel® Core™ Microarchitecture
Today’s 65nm Intel Core 45nm Enhanced Intel Core
Microarchitecture Microarchitecture (Penryn)
Fast Radix-16 Divider
Intel® Wide Dynamic Execution Faster OS Primitive Support
Enhanced Intel Virtualization Technology
Larger L2 Cache: up to 12MB
Intel® Advanced Smart Cache
24 Way Set Associativity
Improved Store Forwarding
Intel® Smart Memory Access
Higher bus speeds
Intel SSE4 instructions
Intel® Advanced Digital Media Boost
Super Shuffle Engine
Deep Power Down Technology*
Intel® Intelligent Power Capability
Enhanced Dynamic Acceleration Technology*
* Mobile only features
New Levels of Energy-Efficient Performance
11
12. Enhanced Intel® Core™ Microarchitecture
– Details Covered In These IDF Sessions
TCHS001 [Tuesday, 2pm, Room 2001-2003]
Buckle Up: It is Penryn inside Speakers: Steve Pawlowski & Ofri Wechsler
– in depth on Penryn and high-level view of Nehalem next gen microarchitecture
high-
IPTC001 [Tuesday, 5:10pm, CT-1]
45nm Next-Generation Intel® Core™ Microarchitecture (Penryn) and Intel®
SSE4 - Chalk Talk Speakers: Stephen Fischer, Kiefer Kuah, Karthik Krishnan
Fischer, Kuah,
IPTS001 [Tuesday, 3pm, Room 2001-2003]
Technical Overview of the 45nm Next-Generation Intel® Core™
Microarchitecture (Penryn) Speaker: Stephen Fischer
IPTS002 [Tuesday, 5:10pm, Room 2001]
Tuning for Intel® SSE4 on the 45nm Next-Generation Intel® Core™
Microarchitecture (Penryn) Speakers: Karthik Krishnan & Jeremy Saldate
There are more tracks & sessions focused on High Performance
Computing, Workstations, Server, and Desktop segment platforms
12
13. Sustained Leadership
process life
TICK Pentium® D, Xeon®, Core™ processor
2 YEARS
65nm
TOCK Core 2 processor, Xeon processor
process life
TICK PENRYN Family
2 YEARS
45nm
TOCK NEHALEM
process life
TICK WESTMERE
2 YEARS
32nm
TOCK SANDY BRIDGE
New process generation
New product architecture 13
14. Intel® Notebook / Desktop Roadmap
4Q’07 Future
Desktop Extreme 45nm Desktop Intel® Core™2 Extreme processors Nehalem
segment Processors
(Intel shipments and OEM availability in 4Q’07)
processors
Intel® X38, P35 Express & OEM Chipsets Future Chipset
`
Desktop Q6000s,
Performance / 45nm Desktop Intel® Core™2 Quad, Duo processors Nehalem
E6000s,
Processors
Mainstream (Intel shipments in 4Q’07, OEM availability in 1Q’08)
E4000s
(65nm)
segment
processors Intel® 3 Series & OEM Chipsets Future Chipset
45nm Mobile Intel® Core™2 Extreme processors
Mobile Extreme Nehalem
X7900
(65nm) Processors
(Intel shipments in 4Q’07, OEM availability in 1Q’08)
segment
processors Intel® & OEM Chipsets Future Chipset
`
Mobile
45nm Mobile Intel® Core™2 Duo processors
Performance / Nehalem
T7000s
Processors
(65nm) (Intel shipments in 4Q’07, OEM availability in 1Q’08)
Mainstream
segment
processors Intel® & OEM Chipsets Future Chipset
45nm Intel® Silverthorne processors
(available beginning in 1H’08)
14
20. Intel® Core™2 Extreme QX9650
Next Gen 45nm Quad-Core
Quad-Core:
4 cores / 4 threads
3.0 GHz Core Frequency Enhanced Intel® Core™
(initial offering) Microarchitecture
Larger 12MB L2 Cache
45nm process technology:
• Higher Performance
PC industry’s first 100% at same TDP
Lead free processor
New SSE4 Instructions:
Technologies*:
• Improved Multi-media
• Intel® 64
• Enhanced Video Encode and
• Enhanced Intel SpeedStep® Tech
Decode
• Execute Disable Bit
• Improved Photo Editing
• Intel® Virtualization Tech
Overspeed protection1
1333 MHz FSB
removed
LGA 775 socket
Supported by the Intel® X38
and P35 Express Chipsets
FMB: 130W
1Warning: altering clock frequency and/or voltage may (i) reduce system stability and useful like of the system and
processor; (ii) cause the processor and other system components to fail; (iii) cause reductions in system performance;
(iv) cause additional damage; and (v) affect system data integrity. Intel has not tested, and does not warranty, the
operation of the processor beyond its specifications.quot;
*Certain features may be available only on particular SKUs
20
21. Intel® X38 Express Chipset
Tuning
Performance
Intel® Extreme Memory
PCI Express 2.0 Dual x16 Intel® Extreme Tuning Utility
DDR3 1333 Flexible (unlocked) bus ratios
Intel® Fast Memory Access
Intel® Turbo Memory†
Technology
Support for existing 65nm & new FSB 1333 / 1066 / 800
45nm Intel® Core™2 Extreme DDR3 1333 / 1066 / 800
DDR2 800 / 667
processors as well as mainstream
Intel Core 2 Quad, Duo processors
Greater performance in the same
power envelope Dual x16 PCIe 2.0 Graphics
The Intel® X38 Express Chipset has been
shipping for some time & will be broadly
ICH9
available from OEMs soon
QX9650 + X38 Express
Extends Existing Performance Leadership
1
Some features may not be available at launch 21
22. 3.0 GHz Quad-Core Performance Comparison
SSE4
Intel® Core™2 Extreme QX6850 (3.0 GHz, 1333MHz FSB, 8MB L2)
Optimized1
2.00
Pre-Production 45nm Intel Core™2 (3.0 GHz, 1333 MHz FSB, 12MB L2)
1.63
Normalized to Intel® Core™2 Extreme QX6850
1.50
1.13
1.10
1.08
1.07
1.00 1.00 1.00 1.00 1.00
1.00
0.50 SSE4
3D
Photo 3D Special
Video
Editing Rendering Effects Gaming Encoding
0.00
Adobe * Cine be nch* 10 Adobe * Afte r Half-Life * 2 Los t DivX* 6.6.1 w ith
Photos hop* CS3 Effe cts * CS3 Coas t V irtualDub* 1.7.2
1SSE4 support in DivX*6.6 is experimental. Data is subject to change.
Microarchitecture improvements combined with a 12MB L2 cache and SSE4
Intel® Core™
improve upon Intel® Core™2 processor performance even at the same clock speed
Source: Intel. Configuration: Intel® Core™ 2 Extreme QX6850 (8MB L2, 3.0 GHz, 1333MHz FSB) and Pre-Production 45nm Intel Core™2 Processor (12MB L2, 3.0 GHz, 1333MHz
FSB) on Intel DX38BT board, Intel Chipset INF 08.30.1013, 2x1GB Dual Channel Corsair* DDR3-1333 9-9-9 -24, Seagate* 320GB Barracuda* NCQ Serial ATA 7200 RPM,
Windows* Vista* Ultimate 32bit. Performance tests and ratings are measured using specific computer systems and / or components and reflect the approximate performance of
Intel products as measured by those tests. Any difference in system hardware or software design or configuration may affect actual performance. Buyers should consult other
sources of information to evaluate the performance of systems or components they are considering purchasing. For more information on performance tests and on the performance
of Intel products, visit http://www.intel.com/performance/
22
23. Intel® Server Board X38ML
X38 Express chipset , 1333 FSB
Single PCI-Express Gen 2 x16 connector
Up to 4 DIMMs (8GB)
DDR2 667/800 memory w/ ECC
Integrated 4 port SATA
3.0Gb/s with RAID 0,1,10
Integrated Dual Gigabit Ethernet (Zoar)
Intel® Server System
SR1520ML
shown with included heat sinks,
PCI-E x16 risers, 2.5” drive carriers
23
24. “45nm Tock”—Nehalem
Dynamic Scalability for Efficient Performance on Demand
Fully Leverages 4 Dynamically Simultaneous Multi-level Performance
Issue Intel®
Unlocks Managed Multi- Shared Enhanced
Cores/ threading
Intel 45 nm Core™ Micro- Cache Dynamic
Threads/ Architecture
High-k architecture Power
Technology Caches Management
Silicon
Benefits
Design Scalability Optimizes for Each Market Segment
New System Scalable & Optional High Scalable Initial Products
Architecture Performance Performance:
Configurable in Production
in ‘08
Cache, Integrated 1 to 16+
Threads &
Includes Interconnects & Graphics For
Client 1 to 8+ Cores
QuickPath Memory
Architecture Controllers
24
All product information and dates are preliminary and subject to change without notice
25. Nehalem Based System
Architecture
Nehalem Nehalem
I/O
Hub
PCI Express*
DMI
ICH
Intel QuickPath Interconnect
2, 4, 8 Cores, 4, 8, 16 Threads
Intel® QuickPath Architecture
Buffered or Unbuffered Memory
Optional Integrated Graphics
Integrated Memory Controller
25
27. Summary
enhanced Intel®
New generation 45nm process technology
Core™ Microarchitecture shipping in 4Q’07 across all segments
New Stoakley DP server segment platform & 45nm processors
provide boost for High Performance Computing
New Intel® X38 Express chipset based platform with new
45nm quad-core Intel® Core™2 Extreme processor hits new
heights of performance in the same power envelope
45nm Hi-k advances allow Intel to address multiple diverse
segments from low power IA Silverthorne to Nehalem
Customers benefit from Intel leadership in manufacturing,
micro-
micro-architecture, and product development
27