Multiple gate field effect transistors foreSAT Journals
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented. Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET
Multiple gate field effect transistors foreSAT Journals
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented. Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET
Analysis of analog and RF behaviors in junctionless double gate vertical MOSFETjournalBEEI
The prime obstacle in continuing the transistor’s scaling is to maintain ultra-shallow source/drain (S/D) junctions with high doping concentration gradient, which definitely demands an advanced and complicated S/D and channel engineering. Junctionless transistor configuration has been found to be an alternative device structure in which the junction and doping gradients could be totally eliminated, thus simplifying the fabrication process. In this paper, a process simulation has been performed to study the impact of junctionless configuration on the analog and RF behaviors of double-gate vertical MOSFET. The result proves that the performance of n-channel junctionless double-gate vertical MOSFET (n-JLDGVM) is slightly better than the junction double-gate vertical MOSFET (n-JDGVM). Junctionless device exhibits better analog behaviors as the transconductance (gm) is increased by approximately 4%. In term of RF behaviors, the junctionless device exhibits 3.4% and 7% higher cut-off frequency (fT) and gain band-width product (GBW) respectively over the junction device.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
Analog Mixed-Signal Design in FinFET Processes Design World
While industry pundits have forecasted the end of analog design in the next leading edge process, the reality is that the practice is still going strong, and there’s no end in sight. Not only are teams still designing data converters, PLLs, filters, and other analog goodies in the latest processes (including FinFET), but design teams are reaching higher levels of performance than they did in yesterday’s processes. The new processes have, without a doubt, changed the task of analog design, and the designer’s toolkit has had to undergo a major revision. Many of our old techniques have become a lot less relevant, and today’s designer needs to have a good handle on a broad set of new techniques.
Some of the changes are a result of designers targeting processes for very digital applications (supply voltages of 0.8V and less). Others are a result of the size of the devices (matching of small devices is poor, matching of very small devices is worse). Changes are also a result of the new fabrication techniques that must be used to make the devices (unit-sized devices and no mixing of different device types - resistor and I/O device ghettos are required). Of course, there’s great news: the transistors are wonderfully fast and the digital is almost free.
View this webinar to:
-Gain an understanding of the challenges of analog design in the new world of leading-edge processes
-Learn about design techniques that take advantage of the characteristics of today’s design reality
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
one of the famous Silicon Valley golden rules which state “Higher the clock frequency, Greater the power consumption”. Digging deep into deep submicron CMOS technology, there are design and power management challenges present for Analog and Mixed Signal devices such as PLL and it is very much important to optimize PLL to create a successful and power optimized system. Here, ALF CP PLL is designed in a way that it can operate on low supply voltage but with a 20% reduction in the overall power consumption. The PLL output frequency can be tuned from 80 MHz to 330 MHz and at 350 MHz PLL consumes 190μW at 1V of supply.
Analysis of analog and RF behaviors in junctionless double gate vertical MOSFETjournalBEEI
The prime obstacle in continuing the transistor’s scaling is to maintain ultra-shallow source/drain (S/D) junctions with high doping concentration gradient, which definitely demands an advanced and complicated S/D and channel engineering. Junctionless transistor configuration has been found to be an alternative device structure in which the junction and doping gradients could be totally eliminated, thus simplifying the fabrication process. In this paper, a process simulation has been performed to study the impact of junctionless configuration on the analog and RF behaviors of double-gate vertical MOSFET. The result proves that the performance of n-channel junctionless double-gate vertical MOSFET (n-JLDGVM) is slightly better than the junction double-gate vertical MOSFET (n-JDGVM). Junctionless device exhibits better analog behaviors as the transconductance (gm) is increased by approximately 4%. In term of RF behaviors, the junctionless device exhibits 3.4% and 7% higher cut-off frequency (fT) and gain band-width product (GBW) respectively over the junction device.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
Analog Mixed-Signal Design in FinFET Processes Design World
While industry pundits have forecasted the end of analog design in the next leading edge process, the reality is that the practice is still going strong, and there’s no end in sight. Not only are teams still designing data converters, PLLs, filters, and other analog goodies in the latest processes (including FinFET), but design teams are reaching higher levels of performance than they did in yesterday’s processes. The new processes have, without a doubt, changed the task of analog design, and the designer’s toolkit has had to undergo a major revision. Many of our old techniques have become a lot less relevant, and today’s designer needs to have a good handle on a broad set of new techniques.
Some of the changes are a result of designers targeting processes for very digital applications (supply voltages of 0.8V and less). Others are a result of the size of the devices (matching of small devices is poor, matching of very small devices is worse). Changes are also a result of the new fabrication techniques that must be used to make the devices (unit-sized devices and no mixing of different device types - resistor and I/O device ghettos are required). Of course, there’s great news: the transistors are wonderfully fast and the digital is almost free.
View this webinar to:
-Gain an understanding of the challenges of analog design in the new world of leading-edge processes
-Learn about design techniques that take advantage of the characteristics of today’s design reality
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
one of the famous Silicon Valley golden rules which state “Higher the clock frequency, Greater the power consumption”. Digging deep into deep submicron CMOS technology, there are design and power management challenges present for Analog and Mixed Signal devices such as PLL and it is very much important to optimize PLL to create a successful and power optimized system. Here, ALF CP PLL is designed in a way that it can operate on low supply voltage but with a 20% reduction in the overall power consumption. The PLL output frequency can be tuned from 80 MHz to 330 MHz and at 350 MHz PLL consumes 190μW at 1V of supply.
Achieving Power Noise Reliability Sign-off for FinFET based DesignsAnsys
As the industry shifts to FinFET devices, designs are more sensitive to noise, have higher power density, and interconnects are more susceptible to EM and thermal issues. To ensure robustness of these designs, today's methodology needs to include design for reliability. This presentation describes how RedHawk and Totem platforms enable accurate power noise and reliability sign off for standard cell and analog / mixed-signal IP all the way to SoC. Learn more on our website: https://bit.ly/1CW3FRT and https://bit.ly/1qk5Juj
Paul Ahern - Copper/ low-K Interconnect TechnologyPaul Ahern
The one hallmark that typifies the evolution of integrated circuit technology is the relentless move towards faster clock speeds and smaller geometries. The foremost test facing chipmakers today is how to continue to drive this process forward, extending Moore’s Law in the face of fundamental obstacles. The two areas which are providing the biggest hurdles to IC manufacturing today (1) are trying to scale lithography, and (2) scaling interconnect technology into the sub-22 nanometer range.
This is the presentation that was shared by Nilesh Ranpura and Vineeth Mathramkote at CDNLIVE 2015. The session briefs about the implementation challenges and covers the solution approach and how to achieve results
CMOS Analog IC design by Dr GS Javed - Refresher Course - Batch 1Javed G S, PhD
Topics covered in the course
1. DC Biasing of the circuits
2. Circuits for reference voltage and current generation
-Voltage Regulator
-BGR
-LDO
-V-to-I
3. Precision Current References
4. Opamp design for Analog to digital converters
- OTA
- Buffer
- Unity Feedback OTA
- Layout design strategies – 2stage opamp + CMFB
5. Sense and Return mechanisms in Feedback circuits
- Current and Voltage circuits
6. Sub-Threshold Conduction
- Low voltage Operation
7. ADC Design and Simulation
-Near Nyquist performance of Opamp for ADC Circuits
-Spectral Analysis and No. of FFT Points for simulation
-Simulation time for performance
-Resistors – their variation and Calibration
-Switch design for S/H
-CDAC
8. On-Chip Inductors
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleCSCJournals
Digital filters are common components in many applications today, also in for sensor systems, such as large-scale distributed smart dust sensors. For these applications the power consumption is very critical, it has to be extremely low. With the transistor technology scaling becoming more and more sensitive to e.g. gate leakage, it has become a necessity to find ways to minimize the flow of leakage in current CMOS logic. This paper studies sub-threshold source coupled logic (STSCL) in a 45-nm process. The STSCL can be used instead of traditional CMOS to meet the low power and energy consumption requirements. The STSCL style is in this paper used to design a digital filter, applicable for the audio interface of a smart dust sensor where the sample frequency will be 44.1 kHz. A finite-length impulse response (FIR) filter is used with transposed direct form structure and for the coefficient multiplication five-bit canonic signed digit [7] based serial/parallel multipliers were used. The power consumption is calculated along with the delay in order to present the power delay product (PDP) such that the performance of the sub-threshold logic can be compared with corresponding CMOS implementation. The simulated results shows a significant reduction in energy consumption (in terms of PDP) with the system running at a supply voltage as low as 0.2 V using STSCL.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
Low Power Design of Standard Digital Gate Design Using Novel Sleep Transisto...IJMER
In the nanometer range design technologies static power consumption is very important
issue in present peripheral devices. In the CMOS based VLSI circuits technology is scaling towards
down in respect of size and achieving higher operating speeds. We have also considered these
parameters such that we can control the leakage power. As process model design are getting smaller
the density of device increases and threshold voltage as well as oxide thickness decrease to maintain
the device performance. In this article two novel circuit techniques for reduction leakage current in
NAND and NOR inverters using novel sleepy and sleepy property are investigated. We have proposed a
design model that has significant reduction in power dissipation during inactive (standby) mode of
operation compared to classical power gating methods for these circuit techniques. The proposed
circuit techniques are applied to NAND and NOR inverters and the results are compared with earlier
inverter leakage minimization techniques. All low leakage models of inverters are designed and
simulated in Tanner Tool environment using 65 nm CMOS Technology (1volt) technologies. Average
power, Leakage power, sleep transistor
underground cable fault location using aruino,gsm&gps
Sushant
1. 1 Presented by :- SUSHANT MISHRA EC-2 Under the guidance of :- FinFETs: From Circuit to Architecture
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9. Logic Styles: NAND Gates SG-mode NAND IG-mode NAND LP-mode NAND IG/LP-mode NAND pull up bias voltage pull down bias voltage IG-mode pull up LP-mode pull down
10. Comparing Logic Styles † Average leakage current for two-input NAND gate (V dd = 1.0V) Design Mode Advantages Disadvantages SG Fastest under all load conditions High leakage † (1 μ A) LP Very low leakage (85nA), low switched capacitance Slowest, especially under load. Area overhead (routing) IG Low area and switched capacitance Unmatched pull-up and pull-down delays. High leakage (772nA) IG/LP Low leakage (337nA), area and switched capacitance Almost as slow as LP mode
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19. TCMS Extension Delay-minimized netlist Power : 283.6uW Area: 538 fins Power-optimized netlist Power : 149.9uW Area: 216 fins
21. Power-minimized vs Delay-minimized Netlists at 130% ATC TCMS TCMS (Single-Vth Dual-Vdd % reduction in dynamic power 53.3 49.8 51.4 % reduction in leakage power 95.8 95.7 95.8 % reduction in total power 67.6 65.3 66.3 % reduction in Fin-count 65.2 59.5 61.6