Intel has achieved a breakthrough in transistor technology by developing high-k + metal gate transistors for its 45 nm process. These transistors significantly reduce leakage power and are the biggest advancement since polysilicon gate MOS transistors were introduced in the 1960s. Intel has made working 45 nm microprocessors using these new transistors, which will deliver higher performance and greater energy efficiency. Intel's 45 nm products are on track to begin production in late 2007 with three factories manufacturing 45 nm by early 2008.
This document discusses junctionless transistors as an alternative to traditional transistors. Junctionless transistors have no p-n junctions and instead use uniformly doped semiconductor material. They offer advantages like simpler fabrication without implantation or annealing steps, reduced short channel effects, higher carrier mobility, and lower leakage current. However, they can have greater threshold voltage variability than conventional transistors. The document provides details on the structure and operation of junctionless transistors, comparing them to traditional transistors and discussing their potential to enable further device miniaturization.
The document describes the key steps in CMOS fabrication:
1. A p-type substrate is used, and n-well regions are defined through implantation to create isolation for p-MOSFETs.
2. Active device regions and field oxide isolation are then patterned, followed by gate oxide growth and polysilicon deposition.
3. Self-aligned implantation creates n-type and p-type source/drain regions. Additional metallization layers connect the transistors.
The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.
The document discusses junctionless transistors, which are transistors without PN junctions. Junctionless transistors have uniformly doped channels without doping concentration gradients. They have advantages over traditional transistors like near-ideal subthreshold slopes and lower leakage currents. The document describes the structure, fabrication process, electrical characteristics, and types of junctionless transistors. It notes that junctionless transistors could help enable the continued scaling of transistors to smaller sizes.
This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude as the source/drain junction depth. It describes five main short channel effects: drain induced barrier lowering, drain punch through, velocity saturation, impact ionization, and hot electron effects. For each effect, it provides an explanation of the physical phenomenon and how it impacts device performance as the channel length decreases. It concludes by listing three references for further reading on leakage current mechanisms and MOSFET modeling.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document discusses junctionless transistors as an alternative to traditional transistors. Junctionless transistors have no p-n junctions and instead use uniformly doped semiconductor material. They offer advantages like simpler fabrication without implantation or annealing steps, reduced short channel effects, higher carrier mobility, and lower leakage current. However, they can have greater threshold voltage variability than conventional transistors. The document provides details on the structure and operation of junctionless transistors, comparing them to traditional transistors and discussing their potential to enable further device miniaturization.
The document describes the key steps in CMOS fabrication:
1. A p-type substrate is used, and n-well regions are defined through implantation to create isolation for p-MOSFETs.
2. Active device regions and field oxide isolation are then patterned, followed by gate oxide growth and polysilicon deposition.
3. Self-aligned implantation creates n-type and p-type source/drain regions. Additional metallization layers connect the transistors.
The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.
The document discusses junctionless transistors, which are transistors without PN junctions. Junctionless transistors have uniformly doped channels without doping concentration gradients. They have advantages over traditional transistors like near-ideal subthreshold slopes and lower leakage currents. The document describes the structure, fabrication process, electrical characteristics, and types of junctionless transistors. It notes that junctionless transistors could help enable the continued scaling of transistors to smaller sizes.
This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude as the source/drain junction depth. It describes five main short channel effects: drain induced barrier lowering, drain punch through, velocity saturation, impact ionization, and hot electron effects. For each effect, it provides an explanation of the physical phenomenon and how it impacts device performance as the channel length decreases. It concludes by listing three references for further reading on leakage current mechanisms and MOSFET modeling.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document discusses metal-semiconductor contacts, including Schottky and ohmic contacts. It provides energy band diagrams to illustrate how Schottky and ohmic junctions work. Schottky contacts form a rectifying barrier between a metal and lightly doped semiconductor. Ohmic contacts have a low resistance non-rectifying junction between metal and heavily doped semiconductor. The document discusses the advantages of Schottky diodes for applications such as RF mixing and solar cells due to their higher current and frequency performance compared to PN junction diodes. Ohmic contacts are used where low resistance contact is needed to allow easy flow of charge carriers.
The twin well process allows for separate optimization of n-type and p-type transistors. It involves depositing a lightly doped epitaxial layer on an n+ or p+ substrate, then forming n-wells and p-wells in this layer through independent doping steps. This allows the dopant concentrations to be carefully tuned to produce desired device characteristics for both transistor types. The key steps are tub formation through n-well and p-well implantation and diffusion, polysilicon gate formation, and contact definition and metallization to connect the transistors. The main advantage is obtaining balanced performance from n-type and p-type transistors through separate well optimization.
The document discusses the history and development of FinFET transistors. FinFETs were developed to overcome short channel effects by using a thin silicon fin as the channel between the source and drain. This allows the gate to control the channel from both sides and edges of the fin. FinFET fabrication involves depositing fins using electron beam lithography then depositing a gate material around the fins. FinFETs suppress short channel effects and allow for higher density transistors compared to planar MOSFETs, though they also have some disadvantages like reduced mobility.
This document discusses power dissipation in CMOS circuits. It identifies the main sources of power dissipation as dynamic, static, and short circuit power. Dynamic power is caused by charging and discharging capacitors during switching and depends on activity factors, voltage, and frequency. Static power includes leakage currents that occur even when the device is inactive. Short circuit power arises when both NMOS and PMOS are on simultaneously during signal transitions. The document provides techniques for reducing each type of power dissipation such as lowering voltage, reducing switching activity, minimizing capacitance and transistor sizing.
The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.
This document summarizes a seminar presentation on high-k dielectric devices. It begins by explaining the problems with further scaling silicon dioxide gate dielectrics due to tunneling currents. It then introduces high-k dielectric materials, which have a higher dielectric constant, allowing for thicker dielectric layers with equivalent capacitance. The document discusses issues with compatibility between polysilicon gates and high-k dielectrics, leading to the use of metal gates. It presents the high-k dielectric - metal gate solution adopted by Intel and others, which reduces gate leakage currents and increases performance. Finally, it discusses future opportunities in using high-k dielectrics with non-silicon substrates like germanium.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
This document discusses carbon nanotube field-effect transistors (CNTFETs) as a potential substitute for MOSFETs. CNTFETs could help overcome limitations of MOSFET scaling by providing higher carrier mobility, excellent electrostatics, and gate control. CNTFETs exhibit advantages like better threshold voltage and subthreshold slope control as well as higher current density compared to MOSFETs. However, mass production of CNTFETs faces challenges related to defects, failure rates, and degradation when exposed to oxygen that need to be addressed before widespread implementation.
VLSI is the process of integrating millions of transistors on a single chip. It was invented in 1980 and allows for 20,000 to 1,000,000 transistors per chip. VLSI enables devices to be physically smaller, cheaper to produce, faster, more reliable and efficient. Integrated circuits are used in consumer electronics, computers, wireless devices, automotive electronics, aerospace, defense and more. Moore's Law predicts that the number of transistors on a chip will double every 18 months, allowing continued advancement and miniaturization of chips. Common processing technologies for VLSI include CMOS, Bipolar, BiCMOS, GaAs and SOI.
The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.
Threshold Voltage & Channel Length ModulationBulbul Brahma
Design and Technology of Electronic Devices:
Review of microelectronic devices, introduction to MOS technology and related devices.
MOS transistor theory, scaling theory related to MOS circuits, short channel effect and its
consequences, narrow width effect, FN tunnelling, Double gate MOSFET, Cylindrical
MOSFET, Basic concept of CMOS circuits and logic design. Circuit characterization and
performance estimation, important issues in real devices. PE logic, Domino logic, Pseudo
N-MOS logic-dynamic CMOS and Clocking, layout design and stick diagram, CMOS
analog circuit design, CMOS design methods. Introduction to SOI, Multi layer circuit
design and 3D integration. CMOS processing technology: Crystal grown and Epitaxy, Film
formation, Lithography and Etching, Impurity doping, Integrated Devices.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.
This document provides an overview of VLSI design and MOS transistor principles. It discusses why VLSI design is important due to improvements in integration, power, speed and cost. A brief history of transistor invention and integrated circuit development is given. MOS transistor operation principles including NMOS and PMOS types are explained. CMOS logic gates like inverter, NAND and NOR are described. Electrical properties of CMOS like ideal I-V characteristics are covered.
1. Fully Depleted Silicon On Insulator (FD-SOI) is an innovation that uses an ultra-thin silicon film and buried oxide layer to improve transistor performance and reduce leakage currents.
2. By using a thin buried oxide and silicon film, FD-SOI allows the depletion region to cover the entire film, improving electrostatic characteristics and reducing parasitic capacitance compared to bulk transistors.
3. The improvements allow FD-SOI transistors to operate faster at lower voltages while significantly reducing leakage currents and improving power efficiency through improved body biasing controls.
This chapter describes field-effect transistors (FETs), specifically MOSFETs and JFETs. It defines the key characteristics and operating regions of MOSFETs, including cutoff, triode, and saturation regions. Mathematical models are introduced for the current-voltage characteristics of MOSFETs and JFETs. The chapter also contrasts enhancement-mode and depletion-mode MOSFETs, defines symbols used in schematics, and explores biasing transistors and circuit analysis using MOSFET models.
This document provides an overview of Intel's 45nm manufacturing technology and upcoming 45nm products. Key points include:
- Intel has demonstrated 45nm "Penryn" and "Silverthorne" microprocessors using a revolutionary high-k metal gate transistor technology for improved performance and reduced power leakage.
- Intel's 45nm process uses fully lead-free and halogen-free packaging technologies.
- Yield for 45nm production is on track. Shipments of 45nm CPUs are projected to exceed 65nm CPUs starting in the second half of 2008.
- 45nm CPUs will have higher transistor density and counts than comparable 65nm chips while maintaining the same die size, enabling improved performance and additional features.
This document discusses metal-semiconductor contacts, including Schottky and ohmic contacts. It provides energy band diagrams to illustrate how Schottky and ohmic junctions work. Schottky contacts form a rectifying barrier between a metal and lightly doped semiconductor. Ohmic contacts have a low resistance non-rectifying junction between metal and heavily doped semiconductor. The document discusses the advantages of Schottky diodes for applications such as RF mixing and solar cells due to their higher current and frequency performance compared to PN junction diodes. Ohmic contacts are used where low resistance contact is needed to allow easy flow of charge carriers.
The twin well process allows for separate optimization of n-type and p-type transistors. It involves depositing a lightly doped epitaxial layer on an n+ or p+ substrate, then forming n-wells and p-wells in this layer through independent doping steps. This allows the dopant concentrations to be carefully tuned to produce desired device characteristics for both transistor types. The key steps are tub formation through n-well and p-well implantation and diffusion, polysilicon gate formation, and contact definition and metallization to connect the transistors. The main advantage is obtaining balanced performance from n-type and p-type transistors through separate well optimization.
The document discusses the history and development of FinFET transistors. FinFETs were developed to overcome short channel effects by using a thin silicon fin as the channel between the source and drain. This allows the gate to control the channel from both sides and edges of the fin. FinFET fabrication involves depositing fins using electron beam lithography then depositing a gate material around the fins. FinFETs suppress short channel effects and allow for higher density transistors compared to planar MOSFETs, though they also have some disadvantages like reduced mobility.
This document discusses power dissipation in CMOS circuits. It identifies the main sources of power dissipation as dynamic, static, and short circuit power. Dynamic power is caused by charging and discharging capacitors during switching and depends on activity factors, voltage, and frequency. Static power includes leakage currents that occur even when the device is inactive. Short circuit power arises when both NMOS and PMOS are on simultaneously during signal transitions. The document provides techniques for reducing each type of power dissipation such as lowering voltage, reducing switching activity, minimizing capacitance and transistor sizing.
The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.
This document summarizes a seminar presentation on high-k dielectric devices. It begins by explaining the problems with further scaling silicon dioxide gate dielectrics due to tunneling currents. It then introduces high-k dielectric materials, which have a higher dielectric constant, allowing for thicker dielectric layers with equivalent capacitance. The document discusses issues with compatibility between polysilicon gates and high-k dielectrics, leading to the use of metal gates. It presents the high-k dielectric - metal gate solution adopted by Intel and others, which reduces gate leakage currents and increases performance. Finally, it discusses future opportunities in using high-k dielectrics with non-silicon substrates like germanium.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
This document discusses carbon nanotube field-effect transistors (CNTFETs) as a potential substitute for MOSFETs. CNTFETs could help overcome limitations of MOSFET scaling by providing higher carrier mobility, excellent electrostatics, and gate control. CNTFETs exhibit advantages like better threshold voltage and subthreshold slope control as well as higher current density compared to MOSFETs. However, mass production of CNTFETs faces challenges related to defects, failure rates, and degradation when exposed to oxygen that need to be addressed before widespread implementation.
VLSI is the process of integrating millions of transistors on a single chip. It was invented in 1980 and allows for 20,000 to 1,000,000 transistors per chip. VLSI enables devices to be physically smaller, cheaper to produce, faster, more reliable and efficient. Integrated circuits are used in consumer electronics, computers, wireless devices, automotive electronics, aerospace, defense and more. Moore's Law predicts that the number of transistors on a chip will double every 18 months, allowing continued advancement and miniaturization of chips. Common processing technologies for VLSI include CMOS, Bipolar, BiCMOS, GaAs and SOI.
The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.
Threshold Voltage & Channel Length ModulationBulbul Brahma
Design and Technology of Electronic Devices:
Review of microelectronic devices, introduction to MOS technology and related devices.
MOS transistor theory, scaling theory related to MOS circuits, short channel effect and its
consequences, narrow width effect, FN tunnelling, Double gate MOSFET, Cylindrical
MOSFET, Basic concept of CMOS circuits and logic design. Circuit characterization and
performance estimation, important issues in real devices. PE logic, Domino logic, Pseudo
N-MOS logic-dynamic CMOS and Clocking, layout design and stick diagram, CMOS
analog circuit design, CMOS design methods. Introduction to SOI, Multi layer circuit
design and 3D integration. CMOS processing technology: Crystal grown and Epitaxy, Film
formation, Lithography and Etching, Impurity doping, Integrated Devices.
Here are the all short channel effects that you require.It consist of:-
Drain Induced Barrier Lowering
Hot electron Effect
Impact Ionization
Surface Scattering
Velocity saturation
This document discusses FinFET technology. It begins with an introduction to FinFETs, explaining that they are a type of double-gate CMOS that offers advantages over traditional CMOS for scaling to short gate lengths. It then discusses why FinFET technology is needed as traditional CMOS scaling faces challenges from subthreshold and gate leakage. It provides details on double-gate FET structure and operation, including how it controls short-channel effects better than single-gate FETs. It also covers FinFET features, applications, challenges and concludes that FinFETs can help continue CMOS scaling if key issues like fin patterning and gate work functions are addressed.
This document provides an overview of VLSI design and MOS transistor principles. It discusses why VLSI design is important due to improvements in integration, power, speed and cost. A brief history of transistor invention and integrated circuit development is given. MOS transistor operation principles including NMOS and PMOS types are explained. CMOS logic gates like inverter, NAND and NOR are described. Electrical properties of CMOS like ideal I-V characteristics are covered.
1. Fully Depleted Silicon On Insulator (FD-SOI) is an innovation that uses an ultra-thin silicon film and buried oxide layer to improve transistor performance and reduce leakage currents.
2. By using a thin buried oxide and silicon film, FD-SOI allows the depletion region to cover the entire film, improving electrostatic characteristics and reducing parasitic capacitance compared to bulk transistors.
3. The improvements allow FD-SOI transistors to operate faster at lower voltages while significantly reducing leakage currents and improving power efficiency through improved body biasing controls.
This chapter describes field-effect transistors (FETs), specifically MOSFETs and JFETs. It defines the key characteristics and operating regions of MOSFETs, including cutoff, triode, and saturation regions. Mathematical models are introduced for the current-voltage characteristics of MOSFETs and JFETs. The chapter also contrasts enhancement-mode and depletion-mode MOSFETs, defines symbols used in schematics, and explores biasing transistors and circuit analysis using MOSFET models.
This document provides an overview of Intel's 45nm manufacturing technology and upcoming 45nm products. Key points include:
- Intel has demonstrated 45nm "Penryn" and "Silverthorne" microprocessors using a revolutionary high-k metal gate transistor technology for improved performance and reduced power leakage.
- Intel's 45nm process uses fully lead-free and halogen-free packaging technologies.
- Yield for 45nm production is on track. Shipments of 45nm CPUs are projected to exceed 65nm CPUs starting in the second half of 2008.
- 45nm CPUs will have higher transistor density and counts than comparable 65nm chips while maintaining the same die size, enabling improved performance and additional features.
Paul Ahern - Copper/ low-K Interconnect TechnologyPaul Ahern
This document reviews the development of interconnect technology in integrated circuits from aluminum to copper and low-k dielectrics. It discusses how copper replaced aluminum as the interconnect material due to its higher conductivity and electromigration resistance. Copper is patterned using the damascene process where it is deposited into trenches etched into a dielectric. As feature sizes shrank below 180nm, the dielectric constant of the interlayer dielectric (ILD) needed to be reduced to prevent delays, leading to the use of low-k materials like carbon-doped oxides and porous oxides with dielectric constants as low as 2.1.
HIGH-K DEVICES BY ALD FOR SEMICONDUCTOR APPLICATIONSJonas Sundqvist
This document summarizes research on high-k dielectric devices fabricated using atomic layer deposition (ALD) for semiconductor applications presented by researchers from the Fraunhofer Institute for Photonic Microsystems. It discusses the history of ALD deposition of high-k materials like TiO2 and laminates of Ta2O5 and HfO2 for capacitor applications in the 1990s. It also summarizes the development of TiN/ZrO2-based capacitors and research on ALD HfO2 for emerging ferroelectric memory devices. Finally, it discusses the fabrication of 3D capacitor structures using ALD with densities over 250 nF/mm2 and possibilities for 3D integration of ferroelectric HfO2
GLOBALFOUNDRIES is the only pure-play foundry currently producing chips using the 32nm HKMG process. They are ramping production of the "Llano" chip, the first HKMG product in the industry, which can be seen in laptop demos at their booth and in stores that month. GLOBALFOUNDRIES is leading the industry in ramping HKMG production volume ahead of other foundries and offers two 28nm platforms - 28nm-SLP for low power needs and 28nm-HPP for high performance. They are providing extensive design enablement including design kits and a multi-project wafer program to drive the 28nm transition and define their 20nm technology and production plans.
Intel is launching new 45nm processors featuring revolutionary hafnium-based high-k metal gate transistors, representing the biggest advancement in transistor design in 40 years. This includes 16 new server and desktop processors. Intel is executing on delivering higher performance and greater energy efficiency across servers, desktops, and laptops through its 45nm process and new processor families.
This document discusses the achievements and challenges of MOSFETs with high-k gate dielectrics. As silicon dioxide scales thinner for Moore's Law, it allows excessive gate leakage currents due to quantum tunneling. Replacing silicon dioxide with high-k dielectric materials can help address this issue while continuing scaling. However, using high-k dielectrics introduces new challenges including high threshold voltages when paired with polysilicon gates. Replacing the polysilicon with a metal gate can help address issues of fermi level pinning and reduce mobility degradation. Intel achieved a 20% improvement in transistor switching speed by implementing high-k dielectric HfO2 and a metal gate in their 45nm transistors.
The document discusses 45nm transistor properties. It describes how 45nm transistors were developed using high-k dielectrics and metal gates to replace silicon dioxide. This allowed for reduced leakage current and increased drive current. 45nm processors from Intel, AMD, and others are discussed. Key advantages of 45nm transistors include higher computational ability, greater power efficiency, and less power leakage.
This is the presentation that was shared by Nilesh Ranpura and Vineeth Mathramkote at CDNLIVE 2015. The session briefs about the implementation challenges and covers the solution approach and how to achieve results
The document describes the structure and operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). It details the three main components: the gate, source, and drain electrodes separated by a thin gate oxide layer. Depending on the gate voltage relative to the threshold voltage, the MOSFET can be in one of three operating modes - cutoff, linear, or saturation - determining whether current flows between the source and drain. Enhancement mode MOSFETs require a gate voltage to turn on, functioning like a normally open switch, while depletion mode MOSFETs require a gate voltage to turn off, functioning like a normally closed switch.
This document discusses ultra-large scale integration (ULSI) circuits and semiconductor manufacturing processes. It introduces ULSI and its applications. It then summarizes the key steps in the IC fabrication process, including crystal growth, thin film deposition, oxidation, etching, lithography and metallization. Finally, it discusses future trends in ULSI, such as following Moore's Law to continue increasing transistor density, performance and functionality through advances in device physics, materials and technology to shrink dimensions below physical limits.
1. FinFETs allow for independent control of transistor gates, enabling new low-power circuit techniques like unusual logic styles and dual-Vdd circuits.
2. Simulation shows these FinFET circuit techniques can reduce total power consumption in ISCAS'85 benchmarks by up to 80% compared to traditional static CMOS designs.
3. FinFETs also enable architectural optimizations like variation-tolerant SRAM and novel non-volatile reconfigurable logic that could provide over an order of magnitude improvements in density and performance.
Presentation gives an insight into Moore's law and it's successful 50 years.
An account on what Moore's law is, how we keep pace with Moore's law, and what future holds for it is detailed out in the slides.
The document discusses the history and development of transistors from their invention in 1947 to modern 3D transistors. It describes how Moore's Law of transistor scaling led to the development of 3D tri-gate transistors to overcome limitations of planar transistors. The document explains how 3D transistors provide better performance than planar transistors through conducting channels on three sides of a vertical fin structure. It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.
The document discusses 3D transistors, which employ a single gate stacked on top of two vertical gates to allow three times the surface area for electron flow without increasing gate size. This overcomes issues with further scaling planar transistors. 3D transistors provide fully depleted operation and tighter channel control through conducting channels on three sides of a vertical fin. This enables high drive currents and improved switching performance. 3D transistors can operate at lower voltages than planar transistors, reducing power consumption by over 50% while maintaining or improving performance. They will allow continued transistor scaling per Moore's Law and are needed for future generations of chips.
Are you looking to buy Si Wafer? We are a leading supplier of Silicon wafers across six continents in over 45 countries. Call (561) 842-4441 or Shop at our website.
There are several types of field effect transistors (FETs) that are classified based on their construction and operation:
- JFETs operate using only one type of charge carrier and have either an n-channel or p-channel. The gate voltage controls the drain current.
- MOSFETs also come in n-channel or p-channel varieties and include depletion mode and enhancement mode types. Depletion mode MOSFETs operate in depletion mode like JFETs when the gate-source voltage is less than or equal to 0 and in enhancement mode when it is greater than 0. Enhancement mode MOSFETs only allow drain current when the gate-source voltage exceeds the threshold voltage.
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intel PDF 32nm Technology Update Mark Bohrfinance6
This document provides a summary of Intel's 32nm technology. It discusses:
1) Intel being the first to demonstrate working 32nm processors and having its 32nm process on track for production readiness in Q4 2009.
2) Both CPU and SoC versions of Intel's 32nm process being available.
3) Intel's strength as an integrated device manufacturer allowing it to continue delivering new process technologies every two years.
This document discusses the evolution of transistor technology, focusing on the development of tri-gate transistors. It describes how tri-gate transistors allow Moore's Law to continue by addressing issues like short channel effects that arise at smaller scales. The document outlines different types of multigate transistors and explains the advantages of tri-gate transistors, such as reduced power dissipation and better control over leakage current. It also provides some examples of how small 22nm transistors are in comparison to everyday objects.
This document provides an overview of FinFET technology. It defines FinFET as a non-planar, double gate transistor built on an SOI substrate, where the conducting channel is wrapped by a thin silicon fin. Due to its dual gate structure, FinFET has better control over short channel effects compared to planar MOSFETs. It also allows for higher integration density than planar MOSFETs. Additionally, FinFET fabrication is relatively simple. The document discusses FinFET structure, recent developments, fabrication mechanisms, advantages/limitations, and applications.
This document discusses gate stack design and transistor development. It covers the history of gate oxides and issues with thinning gate oxides, leading to the adoption of high-k dielectric materials. The document discusses challenges with poly-silicon gates and the transition to metal gates. It outlines present gate stack designs incorporating high-k dielectrics and metal gates, and future developments including the use of tri-gate and FinFET transistors to continue following Moore's Law.
This document discusses MOSFETs and CMOS technology scaling. It begins with an introduction to electronics and transistors before discussing MOSFET structure and operation. The MOSFET I-V characteristics and effects like body effect and channel length modulation are covered. The use of SPICE models to simulate MOSFET behavior is also summarized. The document then addresses challenges with scaling CMOS technology to smaller nodes and how approaches like high-k dielectrics and FinFETs helped overcome these challenges. FinFET structure and advantages over planar MOSFETs are briefly outlined.
Atomic Layer Deposition solutions for SiC Power ElectronicsBeneq
Atomic Layer Deposition solutions for SiC Power Electronics
Beneq provides Atomic Layer Deposition (ALD) equipment and materials for applications such as SiC MOSFETs. The presentation discusses the growing market for SiC power devices and how ALD can provide conformal thin films for gate dielectrics and surface passivation layers. Beneq's Transform batch ALD system enables both plasma-enhanced and thermal ALD processing for deposition of interfacial layers and thicker dielectric stacks. The Transform system offers high throughput and versatility for manufacturing of power electronics.
3D Embedded Substrate Technologies Increase Density and Performance of Power ...Design World
This webinar discussed significant developments and trends in 3D packaging with a focus on embedded substrate technologies. A technology report commissioned by PSMA found that embedded substrate technology can increase power density by embedding active components and passives directly into substrate layers. The webinar covered various embedded substrate manufacturing technologies from companies like AT&S, TDK, Infineon, and Semikron. It discussed the benefits of embedded substrates including improved performance, reliability, thermal management and reduced size. Standards for embedded components and a variety of embedded passive and active components were also reviewed.
The document discusses the capacitor requirements for wide bandgap semiconductor applications using silicon carbide (SiC) and gallium nitride (GaN). These applications require smaller, lower ESR capacitors that can operate reliably at higher voltages, temperatures, and switching frequencies. The document examines how multilayer ceramic chip (MLCC) capacitors using nickel cobalt manganese oxide (NiCoMnO or NiBME) can meet the needs, presenting data on the reliability and performance of prototype MLCCs. It also discusses using transient liquid phase sintering (TLPS) for leadless MLCC packaging to increase capacitance in a given area and improve thermal performance compared to horizontal mounting.
The document summarizes Intel's 45nm logic technology which introduced high-k metal gate transistors. Key points:
- The new technology demonstrated unprecedented performance with best drive currents ever recorded, due to a scaled gate oxide, optimal workfunction metal, and enhanced strain-inducing steps.
- A high-k dielectric and metal gate replaced polysilicon to address gate leakage issues. Process changes included increased embedded SiGe and removal of dummy gates to further improve strain.
- Transistor measurements showed 51% higher PMOS drive current and 12% higher NMOS drive current versus the previous 65nm generation. Ring oscillator tests revealed a 23% reduction in gate delay.
- Variation sources like random
Introducing higher dielectric constant (k > 10) insulators [mainly transition metal (TM) oxides] is therefore indispensable for the 70 nm technology node and beyond
TM silicates such as HfSiOx have been preferred because they have better thermal stability compared to their oxides. The dielectric constant of TM silicates is less than TM oxides but higher than silicon oxide.
Designing For Flexibility And ReliabilityAbdul Khan
This document discusses factors that contribute to the reliability of flexible printed circuits (FPCs) that experience flexing during use. It covers the benefits of FPCs including reduced weight and space, improved packaging, and increased functionality. The document discusses standard FPC constructions, materials, manufacturing capabilities, design guidelines, and considerations for designing FPCs to function reliably under flexing conditions.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
IRJET- Simulation of High K Dielectric MOS with HFo2 as a Gate DielectricIRJET Journal
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Intel 45nm high-k metal-gate press release
1. Intel Demonstrates
High-k + Metal Gate Transistor Breakthrough
on 45 nm Microprocessors
Mark Bohr Kaizad Mistry Steve Smith
Intel Senior Fellow 45 nm Program Manager Vice President
Logic Technology Development Logic Technology Development DEG Group Operations
1 Jan. 2007
2. Risk Factors
Today’s presentations contain forward-looking statements. All
statements made that are not historical facts are subject to a number
of risks and uncertainties, and actual results may differ materially.
Please refer to our most recent Earnings Release and our most recent
Form 10-Q or 10-K filing for more information on the risk factors that
could cause actual results to differ.
If we use any non-GAAP financial measures during the presentations,
you will find on our website, intc.com, the required reconciliation to the
most directly comparable GAAP financial measure.
2 Jan. 2007
3. Key Messages
• Intel has achieved a significant breakthrough in transistor technology
by developing high-k + metal gate transistors for its 45 nm process
that significantly reduce leakage power
• High-k + metal gate transistors are the biggest advancement in
transistor technology since the introduction of polysilicon gate MOS
transistors in the late 1960s
• Working 45 nm microprocessors have been made using these
revolutionary high-k + metal gate transistors
• These new 45 nm multi-core microprocessors will deliver higher
performance and greater energy efficiency
• Intel’s 45 nm products are on track to begin production in 2H ’07 with
three factories scheduled to be manufacturing 45 nm by 1H ‘08
3 Jan. 2007
4. Intel's Logic Technology Evolution
Process Name: P1262 P1264 P1266 P1268 P1270
Lithography: 90 nm 65 nm 45 nm 32 nm 22 nm
1st Production: 2003 2005 2007 2009 2011
Moore's Law continues!
Intel continues to develop a new technology generation every 2 years
4 Jan. 2007
5. 45 nm Technology Benefits
• Compared to today’s 65 nm technology, Intel’s 45 nm technology
will provide the following product benefits:
~2x improvement in transistor density, for either
smaller chip size or increased transistor count
~30% reduction in transistor switching power
>20% improvement in transistor switching speed or
>5x reduction in source-drain leakage power
>10x reduction in gate oxide leakage power
• These performance and leakage improvements would not be
possible without high-k + metal gate
• This process technology will provide the foundation to deliver
improved performance/watt that will enhance the user experience
5 Jan. 2007
6. High-k + Metal Gate Transistors
Standard HK+MG
Transistor Transistor
Low resistance layer Low resistance layer
Polysilicon gate Metal gate
N+ for NMOS Different for
P+ for PMOS NMOS and PMOS
SiO2 gate oxide High-k gate oxide
Hafnium based
S D S D
Silicon substrate Silicon substrate
High-k + metal gate transistors provide significant performance
increase and leakage reduction, ensuring continuation of Moore’s Law
6 Jan. 2007
7. High-k + Metal Gate Transistors
HK+MG
Transistor
Metal Gate
• Increases the gate field effect
Low resistance layer
High-k Dielectric
Metal gate
• Increases the gate field effect Different for
NMOS and PMOS
• Allows use of thicker dielectric layer
High-k gate oxide
to reduce gate leakage
Hafnium based
S D
HK + MG Combined
• Drive current increased >20%
Silicon substrate
(>20% higher performance)
• Or source-drain leakage reduced >5x
• Gate oxide leakage reduced >10x
7 Jan. 2007
8. High-k + Metal Gate Transistors
Integrated 45 nm
CMOS process Low Resistance Layer
High performance
Work Function Metal
Low leakage Different for NMOS and PMOS
High-k Dielectric
Meets reliability
Hafnium based
requirements
Silicon Substrate
Manufacturable
in high volume
“The implementation of high-k and metal gate materials marks
the biggest change in transistor technology since the introduction
of polysilicon gate MOS transistors in the late 1960s”
Gordon Moore
8 Jan. 2007
9. High-k + Metal Gate Transistors
• Specific metal gate and high-k dielectric materials are not
being disclosed at this time
• There are hundreds of material options for metal gate
electrodes and high-k dielectrics
• Identifying the HK+MG material combination that meets high
performance, low leakage, reliability and manufacturing
requirements is a very significant accomplishment
• No other company has reached this level of success and they
are not expected to have HK+MG until the 32 nm generation
or later
9 Jan. 2007
10. 2003 HK+MG Announcement
What are we announcing?
• Intel has made significant progress in future transistor
materials
• Two key parts of this new transistor are:
− The gate dielectric consists of a “high-k” material
− The gate electrode is made of metal
• Intel has succeeded in integrating these innovations
and creating transistor with record-setting performance,
and with dramatically reduced leakage current
• Intel believes that high-k/metal gate can be
implemented in the 45nm manufacturing process, to be
in production in 2007
Nov. 2003
Intel’s Components Research group announced
first working high-k + metal gate transistors in 2003
10 Jan. 2007
11. 2006 45 nm SRAM Announcement
45 nm SRAM Chip
0.346 μm2 cell
153 Mbit density
119 mm2 chip size
>1 billion transistors
Functional silicon in Jan ‘06
45 nm SRAM test vehicle includes all transistor and interconnect
features to be used on 45 nm microprocessors
January 2006
153 Mbit SRAM in Jan ‘06 used same process features as
today’s 45 nm CPU, including high-k + metal gate transistors
and cost effective 193 nm dry lithography
11 Jan. 2007
12. Penryn Die Photo
45 nm next generation Intel® CoreTM2 family processor
410 million transistors for dual core, 820 million for quad core
World’s first working 45 nm CPU
12 Jan. 2007
13. Penryn Family Processors
Grows the performance and energy efficiency lead established
by Intel® CoreTM2 family and Intel® XeonTM family processors
• Next step in Intel’s rapid technology cadence with second
generation quad core in production 2H ‘07
• Family codename Penryn with server, workstation, desktop,
and mobile optimized versions
• New microarchitecture features for even greater performance
and new capabilities
• New Intel® SSE4 instructions expand capabilities and
performance for media/HPC applications
• Higher core speeds and larger caches
• Leading energy efficiency through design, new power
management modes and Intel’s 45 nm silicon process
Design is out of fab and working
13 Jan. 2007
14. Penryn First Silicon Boots
Windows* Vista*, Mac OS X*, Windows* XP and Linux
* Other names and brands may be claimed as the property of others.
14 Jan. 2007
15. 45 nm Yield Improvement Trend
0.13 um 90 nm 65 nm 45 nm
2 years
Defect
Density
(log scale)
2000 2001 2002 2003 2004 2005 2006 2007
2000 2001 2002 2003 2004 2005 2006 2007 2008
45 nm defect reduction trend at expected 2 year offset from 65 nm
45 nm on track for production ramp in 2H ‘07
15 Jan. 2007
16. 45 nm Manufacturing Fabs
D1D Fab 32 Fab 28
Oregon Arizona Israel
Ramp in 2H ‘07 Ramp in 2H ‘07 Ramp in 1H ‘08
Three 300 mm factories are planned to be
manufacturing 45 nm products by 1H ‘08
16 Jan. 2007
17. Summary
• Intel has achieved a significant breakthrough in transistor technology
by developing high-k + metal gate transistors for its 45 nm process
that significantly reduce leakage power
• High-k + metal gate transistors are the biggest advancement in
transistor technology since the introduction of polysilicon gate MOS
transistors in the late 1960s
• Working 45 nm microprocessors have been made using these
revolutionary high-k + metal gate transistors
• These new 45 nm multi-core microprocessors will deliver higher
performance and greater energy efficiency
• Intel’s 45 nm products are on track to begin production in 2H ’07 with
three factories scheduled to be manufacturing 45 nm by 1H ‘08
Intel is pulling further ahead of the competition
17 Jan. 2007
18. Risk Factors
This presentation contains forward-looking statements that involve a number of risks and uncertainties. These statements do not reflect the potential
impact of any mergers, acquisitions, divestitures, investments or other similar transactions that may be completed in the future. The information
presented is accurate only as of today’s date and will not be updated. In addition to any factors discussed in the presentation, the important factors that
could cause actual results to differ materially include the following: Intel operates in intensely competitive industries that are characterized by a high
percentage of costs that are fixed or difficult to reduce in the short term, significant pricing pressures, and product demand that is highly variable and
difficult to forecast. Additionally, Intel is transitioning to a new microarchitecture on 65nm process technology in all major product segments, and there
could be execution issues associated with these changes, including product defects and errata along with lower than anticipated manufacturing yields.
Revenue and the gross margin percentage are affected by the timing of new Intel product introductions and the demand for and market acceptance of
Intel's products; actions taken by Intel's competitors, including product offerings, marketing programs and pricing pressures and Intel's response to such
actions; Intel's ability to respond quickly to technological developments and to incorporate new features into its products; and the availability of sufficient
inventory of Intel products and related components from other suppliers to meet demand. Factors that could cause demand to be different from Intel’s
expectations include customer acceptance of Intel and competitors' products; changes in customer order patterns, including order cancellations;
changes in the level of inventory at customers; and changes in business and economic conditions. The gross margin percentage could vary significantly
from expectations based on changes in revenue levels; product mix and pricing; capacity utilization; variations in inventory valuation, including
variations related to the timing of qualifying products for sale; excess or obsolete inventory; manufacturing yields; changes in unit costs; impairments of
long-lived assets, including manufacturing, assembly/test and intangible assets; and the timing and execution of the manufacturing ramp and associated
costs, including start-up costs. Expenses, particularly certain marketing and compensation expenses, vary depending on the level of demand for Intel’s
products and the level of revenue and profits. Intel is in the midst of a structure and efficiency review which is resulting in several actions that could have
an impact on expected expense levels and gross margin. The tax rate expectation is based on current tax law and current expected income and
assumes Intel continues to receive tax benefits for export sales. The tax rate may be affected by the closing of acquisitions or divestitures; the
jurisdictions in which profits are determined to be earned and taxed; changes in the estimates of credits, benefits and deductions; the resolution of
issues arising from tax audits with various tax authorities; and the ability to realize deferred tax assets. Gains or losses from equity securities and
interest and other could vary from expectations depending on equity market levels and volatility; gains or losses realized on the sale or exchange of
securities; impairment charges related to marketable, non-marketable and other investments; interest rates; cash balances; and changes in fair value of
derivative instruments. Dividend declarations and the dividend rate are at the discretion of Intel’s board of directors, and plans for future dividends may
be revised by the board. Intel’s dividend and stock buyback programs could be affected by changes in its capital spending programs, changes in its
cash flows and changes in the tax laws, as well as by the level and timing of acquisition and investment activity. Intel’s results could be affected by the
amount, type, and valuation of share-based awards granted as well as the amount of awards cancelled due to employee turnover and the timing of
award exercises by employees. Intel’s results could be impacted by unexpected economic, social, political and physical/infrastructure conditions in the
countries in which Intel, its customers or its suppliers operate, including military conflict and other security risks, natural disasters, infrastructure
disruptions, health concerns and fluctuations in currency exchange rates. Intel’s results could be affected by adverse effects associated with product
defects and errata (deviations from published specifications), and by litigation or regulatory matters involving intellectual property, stockholder,
consumer, antitrust and other issues, such as the litigation and regulatory matters described in Intel’s SEC reports. A more detailed discussion of these
and other factors that could affect Intel's results is included in Intel's SEC filings, including the report on Form 10-Q for the quarter ended September 30.
18 Jan. 2007
20. High-k + Metal Gate Transistor Tutorial
Gate electrode
Gate dielectric
S D Source-drains
Silicon channel
Silicon substrate
Transistors consist of these key structures
20 Jan. 2007
21. High-k + Metal Gate Transistor Tutorial
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Since the late 1960’s transistors have been
made with these basic materials
21 Jan. 2007
22. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
A low resistance capping layer was added in the 1980’s
to help improve transistor performance
22 Jan. 2007
23. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Transistors act as an electrical switch
In the “on” state current flow from source to drain should be high
23 Jan. 2007
24. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Transistors act as an electrical switch
In the “off” state current flow from source to drain should be low
24 Jan. 2007
25. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Thinning the gate dielectric increases gate electrode coupling to
the Si channel (increases gate field effect) and helps to increase
“on” current and reduce “off” current
25 Jan. 2007
26. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Thinning the gate dielectric too much can cause leakage current to
flow through the normally insulating gate dielectric
26 Jan. 2007
27. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Depleted region Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
During normal operation a thin region depleted of conducting
carriers is formed at the bottom of polysilicon gates, resulting in an
undesired increase in the effective thickness of the gate dielectric
27 Jan. 2007
28. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (polysilicon)
Depleted region Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
The thicker effective gate dielectric results in
degraded “on” current and increased “off” current
28 Jan. 2007
29. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (metal)
Gate dielectric (SiO2)
S D Source-drains (doped Si)
Silicon substrate
Converting the polysilicon gate electrode to metal eliminates the
depleted region and increases the gate field effect resulting in
increased “on” current and decreased “off” current
29 Jan. 2007
30. High-k + Metal Gate Transistor Tutorial
Low resistance layer
Gate electrode (metal)
Gate dielectric (high-k)
S D Source-drains (doped Si)
Silicon substrate
Converting SiO2 gate dielectric to high-k allows thickening the
dielectric layer while also increasing the gate field effect resulting
in increased “on” current, decreased “off” current and significantly
decreased gate leakage
30 Jan. 2007