The document discusses the evolution of MOSFET devices as channel lengths have decreased. Conventional bulk MOSFETs face physical limits controlling doping density, short channel effects, and gate oxide thinning. Alternative structures like partially depleted (PD) and fully depleted (FD) silicon-on-insulator (SOI) devices have emerged to extend scaling. PD SOI was initially adopted due to processing similarities to bulk devices. It offers advantages like reduced junction capacitance and dynamic threshold switching but requires addressing the floating body effect and hysteretic threshold variations.