Short-Channel Effects in MOSFET
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1. The document discusses short channel effects in MOSFETs that occur when the channel length becomes small compared to other dimensions. This includes effects like hot carrier injection, dielectric breakdown, and threshold voltage shift. 2. Short channel effects arise due to improper scaling of the source potential and non-scalable properties like junction depth and built-in potentials. They can degrade device characteristics such as output impedance, mobility, and threshold voltage. 3. Specific short channel effects discussed include hot electron injection, dielectric breakdown, drain-induced barrier lowering, mobility degradation, and threshold voltage variation with channel length. Models for threshold voltage shift due to short channel effects are presented.
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SHORT CHANNEL EFFECTS IN MOSFETS- VLSI DESIGN
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
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Short channel effects
This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude as the source/drain junction depth. It describes five main short channel effects: drain induced barrier lowering, drain punch through, velocity saturation, impact ionization, and hot electron effects. For each effect, it provides an explanation of the physical phenomenon and how it impacts device performance as the channel length decreases. It concludes by listing three references for further reading on leakage current mechanisms and MOSFET modeling.
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SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
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Voltage controlled devices
Higher input impedance
Less sensitive to temp. variations
Unipolar device
Smaller/ Easily Integrated Chips
Hybrid Parameter in BJT
The document discusses the hybrid or h-parameters model of bipolar junction transistors. It provides notations and equations for the key h-parameters, including input impedance (h11), forward current gain (h21), reverse voltage transfer ratio (h12), and output admittance (h22). It also describes how to calculate the h-parameters from transistor static characteristics and the advantages of the h-parameter model for circuit analysis and design.
Semiconductor diodes
Semiconductor
If a valence Electron acquires sufficient kinetic energy to break its covalent bond and fills the void created by a hole then a vacancy, or hole will be created in the covalent bond that released the electron
Hence there is a transfer of holes to the left and electrons to the right
Distortionless Transmission Line
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Similar to Short-Channel Effects in MOSFET (20)
absorption coefficient in bulk and quantum well structure
absorption coefficient in bulk and quantum well structure
More from RCC Institute of Information Technology
Scaling in conventional MOSFET for constant electric field and constant voltage
Scaling in conventional MOSFET for constant electric field and constant voltageRCC Institute of Information Technology
Scaling in conventional MOSFETCarrier scattering and ballistic transport
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
Electromagnetic Wave Propagations
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
Biot-Savart law
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
Ampere's circuital law
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
Magnetic Potentials
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
Reflection and Transmission coefficients in transmission line
Reflection and Transmission coefficients in transmission lineRCC Institute of Information Technology
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.Impedance in transmission line
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
Quantum Hall Effect
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
Telegrapher's Equation
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
Dielectrics
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
Capacitor
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
Electrical Properties of Dipole
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
3) A torque is experienced by a dipole when placed in an external electric field, with the torque being proportional to the cross product of the dipole moment and the electric field.
Application of Gauss' Law
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
Fundamentals of Gauss' Law
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
1) An overview of Gauss's law, which states that the total outward electric flux through a closed surface is equal to the total charge enclosed divided by the permittivity of the medium.
2) Derivations and proofs of Gauss's law using calculus theorems like divergence theorem.
3) Applications of Gauss's law to problems involving charge distributions and electric field calculations.
4) Discussions of related concepts like Gauss's law in polarized media, current continuity equation, relaxation time, and Poisson's equation.
5) Example problems demonstrating the application of these electromagnetic theory principles.
Fundamentals of Coulomb's Law
This document discusses Coulomb's law and some key concepts in electrostatics, including:
- Coulomb's law describes the electrostatic force between two point charges, being directly proportional to the product of the charges and inversely proportional to the square of the distance between them.
- The electric field intensity and electric flux density are introduced.
- Properties of the electric field such as it being irrotational are examined.
- The electrostatic potential is defined and its relationship to the electric field is explored.
Vector Integration
This document discusses vector calculus theorems including Stokes' theorem and the divergence theorem. Stokes' theorem relates the line integral of a vector field around a closed curve to the surface integral of the curl of the vector field over any surface bounded by the curve. The divergence theorem relates the volume integral of the divergence of a vector field over a volume to the surface integral of the vector field over the boundary surface of that volume. The document provides proofs of these theorems and examples of their applications to problems involving conservative vector fields and evaluating integrals.
Scalar and vector differentiation
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
Coordinate transformation
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
Moletronics
Molecular electronics aims to use electronic molecules as passive or active electronic components. It has advantages over silicon technology such as smaller size (1-3 nm vs 14 nm), faster time cycles (1 fs vs 1 ns), and ability to integrate more gates per square centimeter (1013 vs 108). Major challenges include difficulty experimentally verifying and directly characterizing molecular devices and fully integrating them with silicon technology. Potential applications include sensors, display devices, energy transaction devices, smart materials, and molecular-scale logic and memory devices.
More from RCC Institute of Information Technology (20)
Scaling in conventional MOSFET for constant electric field and constant voltage
Scaling in conventional MOSFET for constant electric field and constant voltage
Reflection and Transmission coefficients in transmission line
Reflection and Transmission coefficients in transmission line
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一比一原版(uofo毕业证书)美国俄勒冈大学毕业证如何办理
原版一模一样【微信：741003700 】【(uofo毕业证书)美国俄勒冈大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
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校名:学校英文全称
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其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
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留信网认证的作用:
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3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
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校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理旧金山大学毕业证毕业证学位证USF学位证【微信：95270640 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理旧金山大学毕业证毕业证学位证USF学位证【微信：95270640 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
Tools & Techniques for Commissioning and Maintaining PV Systems W-Animations ...
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一比一原版(uoft毕业证书)加拿大多伦多大学毕业证如何办理
原版一模一样【微信：741003700 】【(uoft毕业证书)加拿大多伦多大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
【主营项目】
一.毕业证【q微741003700】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【q/微741003700】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(uoft毕业证书)加拿大多伦多大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(uoft毕业证书)加拿大多伦多大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(uoft毕业证书)加拿大多伦多大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(uoft毕业证书)加拿大多伦多大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
Null Bangalore | Pentesters Approach to AWS IAM
#Abstract:
- Learn more about the real-world methods for auditing AWS IAM (Identity and Access Management) as a pentester. So let us proceed with a brief discussion of IAM as well as some typical misconfigurations and their potential exploits in order to reinforce the understanding of IAM security best practices.
- Gain actionable insights into AWS IAM policies and roles, using hands on approach.
#Prerequisites:
- Basic understanding of AWS services and architecture
- Familiarity with cloud security concepts
- Experience using the AWS Management Console or AWS CLI.
- For hands on lab create account on [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
# Scenario Covered:
- Basics of IAM in AWS
- Implementing IAM Policies with Least Privilege to Manage S3 Bucket
- Objective: Create an S3 bucket with least privilege IAM policy and validate access.
- Steps:
- Create S3 bucket.
- Attach least privilege policy to IAM user.
- Validate access.
- Exploiting IAM PassRole Misconfiguration
-Allows a user to pass a specific IAM role to an AWS service (ec2), typically used for service access delegation. Then exploit PassRole Misconfiguration granting unauthorized access to sensitive resources.
- Objective: Demonstrate how a PassRole misconfiguration can grant unauthorized access.
- Steps:
- Allow user to pass IAM role to EC2.
- Exploit misconfiguration for unauthorized access.
- Access sensitive resources.
- Exploiting IAM AssumeRole Misconfiguration with Overly Permissive Role
- An overly permissive IAM role configuration can lead to privilege escalation by creating a role with administrative privileges and allow a user to assume this role.
- Objective: Show how overly permissive IAM roles can lead to privilege escalation.
- Steps:
- Create role with administrative privileges.
- Allow user to assume the role.
- Perform administrative actions.
- Differentiation between PassRole vs AssumeRole
Try at [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
SCALING OF MOS CIRCUITS m .pptx
this ppt explains about scaling parameters of the mosfet it is basically vlsi subject
Blood finder application project report (1).pdf
Blood Finder is an emergency time app where a user can search for the blood banks as
well as the registered blood donors around Mumbai. This application also provide an
opportunity for the user of this application to become a registered donor for this user have
to enroll for the donor request from the application itself. If the admin wish to make user
a registered donor, with some of the formalities with the organization it can be done.
Specialization of this application is that the user will not have to register on sign-in for
searching the blood banks and blood donors it can be just done by installing the
application to the mobile.
The purpose of making this application is to save the user’s time for searching blood of
needed blood group during the time of the emergency.
This is an android application developed in Java and XML with the connectivity of
SQLite database. This application will provide most of basic functionality required for an
emergency time application. All the details of Blood banks and Blood donors are stored
in the database i.e. SQLite.
This application allowed the user to get all the information regarding blood banks and
blood donors such as Name, Number, Address, Blood Group, rather than searching it on
the different websites and wasting the precious time. This application is effective and
user friendly.
Height and depth gauge linear metrology.pdf
Height gauges may also be used to measure the height of an object by using the underside of the scriber as the datum. The datum may be permanently fixed or the height gauge may have provision to adjust the scale, this is done by sliding the scale vertically along the body of the height gauge by turning a fine feed screw at the top of the gauge; then with the scriber set to the same level as the base, the scale can be matched to it. This adjustment allows different scribers or probes to be used, as well as adjusting for any errors in a damaged or resharpened probe.
Butterfly Valves Manufacturer (LBF Series).pdf
We have designed & manufacture the Lubi Valves LBF series type of Butterfly Valves for General Utility Water applications as well as for HVAC applications.
Beckhoff Programmable Logic Control Overview Presentation
This presentation is to describe the overview of PLC Beckhoff for beginners
Accident detection system project report.pdf
The Rapid growth of technology and infrastructure has made our lives easier. The
advent of technology has also increased the traffic hazards and the road accidents take place
frequently which causes huge loss of life and property because of the poor emergency facilities.
Many lives could have been saved if emergency service could get accident information and
reach in time. Our project will provide an optimum solution to this draw back. A piezo electric
sensor can be used as a crash or rollover detector of the vehicle during and after a crash. With
signals from a piezo electric sensor, a severe accident can be recognized. According to this
project when a vehicle meets with an accident immediately piezo electric sensor will detect the
signal or if a car rolls over. Then with the help of GSM module and GPS module, the location
will be sent to the emergency contact. Then after conforming the location necessary action will
be taken. If the person meets with a small accident or if there is no serious threat to anyone’s
life, then the alert message can be terminated by the driver by a switch provided in order to
avoid wasting the valuable time of the medical rescue team.
一比一原版(osu毕业证书)美国俄勒冈州立大学毕业证如何办理
原版一模一样【微信：741003700 】【(osu毕业证书)美国俄勒冈州立大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
【主营项目】
一.毕业证【q微741003700】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【q/微741003700】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
A high-Speed Communication System is based on the Design of a Bi-NoC Router, ...
The Network on Chip (NoC) has emerged as an effective
solution for intercommunication infrastructure within System on
Chip (SoC) designs, overcoming the limitations of traditional
methods that face significant bottlenecks. However, the complexity
of NoC design presents numerous challenges related to
performance metrics such as scalability, latency, power
consumption, and signal integrity. This project addresses the
issues within the router's memory unit and proposes an enhanced
memory structure. To achieve efficient data transfer, FIFO buffers
are implemented in distributed RAM and virtual channels for
FPGA-based NoC. The project introduces advanced FIFO-based
memory units within the NoC router, assessing their performance
in a Bi-directional NoC (Bi-NoC) configuration. The primary
objective is to reduce the router's workload while enhancing the
FIFO internal structure. To further improve data transfer speed,
a Bi-NoC with a self-configurable intercommunication channel is
suggested. Simulation and synthesis results demonstrate
guaranteed throughput, predictable latency, and equitable
network access, showing significant improvement over previous
designs
Sri Guru Hargobind Ji - Bandi Chor Guru.pdf
Sri Guru Hargobind Ji (19 June 1595 - 3 March 1644) is revered as the Sixth Nanak.
• On 25 May 1606 Guru Arjan nominated his son Sri Hargobind Ji as his successor. Shortly
afterwards, Guru Arjan was arrested, tortured and killed by order of the Mogul Emperor
Jahangir.
• Guru Hargobind's succession ceremony took place on 24 June 1606. He was barely
eleven years old when he became 6th Guru.
• As ordered by Guru Arjan Dev Ji, he put on two swords, one indicated his spiritual
authority (PIRI) and the other, his temporal authority (MIRI). He thus for the first time
initiated military tradition in the Sikh faith to resist religious persecution, protect
people’s freedom and independence to practice religion by choice. He transformed
Sikhs to be Saints and Soldier.
• He had a long tenure as Guru, lasting 37 years, 9 months and 3 days
Digital Twins Computer Networking Paper Presentation.pptx
A Digital Twin in computer networking is a virtual representation of a physical network, used to simulate, analyze, and optimize network performance and reliability. It leverages real-time data to enhance network management, predict issues, and improve decision-making processes.
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EV BMS WITH CHARGE MONITOR AND FIRE DETECTION.pptx
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Beckhoff Programmable Logic Control Overview Presentation
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A high-Speed Communication System is based on the Design of a Bi-NoC Router, ...
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Short-Channel Effects in MOSFET
- 1. Short Channel Effect in MOSFET Arpan Deyasi Dept of ECE, RCCIIT, Kolkata, India 1/17/2021 1Arpan Deyasi, RCCIIT, India
- 2. Q. What is meant by short-channel? Leff≃(zD+zS) Leff zDzS Dielectric 1/17/2021 2Arpan Deyasi, RCCIIT, India DrainSource Channel
- 3. 1/17/2021 3Arpan Deyasi, RCCIIT, India I. Electric field tends to increase because of improper scaling of source potential II. Built-in potential is neither negligible nor scalable III. Vertical depth of source/drain junctions can’t be reduced IV. Mobility decreases with increase of substrate doping V. Subthreshold slope is not scalable Why small geometry effects arise?
- 4. 1/17/2021 4Arpan Deyasi, RCCIIT, India Short-channel effects in MOSFET 1. Hot electron effect 2. Dielectric breakdown 3. Output impedance variation 4. Mobility degradation 5. Threshold voltage shift
- 5. 1/17/2021 Arpan Deyasi, RCCIIT, India 5 A few related physical phenomena
- 6. 1/17/2021 6Arpan Deyasi, RCCIIT, India Hot electron Coldelectron Warmelectron Hotelectron 3 3 2 2 B L B ek T k T>> 3 3 2 2 B L B ek T k T≈ 3 3 2 2 B L B ek T k T<< E v
- 7. 1/17/2021 Arpan Deyasi, RCCIIT, India 7 Drain-Induced Barrier Lowering
- 8. 1/17/2021 Arpan Deyasi, RCCIIT, India 8 Surface Scattering
- 9. 1/17/2021 Arpan Deyasi, RCCIIT, India 9 Channel Length Modulation
- 10. 1/17/2021 Arpan Deyasi, RCCIIT, India 10 Impact Ionization
- 11. 1/17/2021 Arpan Deyasi, RCCIIT, India 11 Effects of Short-Channel Geometry
- 12. 1/17/2021 12Arpan Deyasi, RCCIIT, India Hot electron effect Substrate (p) S (n+) D (n+) Gate Channel Dielectric
- 13. 1/17/2021 13Arpan Deyasi, RCCIIT, India Dielectric Breakdown Substrate (p) S (n+) D (n+) Gate Channel Dielectric
- 14. 1/17/2021 14Arpan Deyasi, RCCIIT, India Output Impedance Variation CLM+DIBL VDS Z0 DIBL
- 15. 1/17/2021 15Arpan Deyasi, RCCIIT, India Mobility Degradation
- 16. 1/17/2021 16Arpan Deyasi, RCCIIT, India Mobility Degradation 0 1 1 ( ) surf GS ThV V µ µ θ = + − μ0: mobility at threshold voltage θ: mobility reduction factor
- 17. 1/17/2021 17Arpan Deyasi, RCCIIT, India Threshold Voltage Variation Dielectric S D Gate zSm zDm ΔLS ΔLD zj zj
- 18. 1/17/2021 18Arpan Deyasi, RCCIIT, India ΔLS: lateral extent of depletion region in source ΔLD: lateral extent of depletion region in drain zS: depth of depletion region in source zD: depth of depletion region in drain zSm: vertical extent of bulk depilation region in source zDm: vertical extent of bulk depilation region in drain Threshold Voltage Variation
- 19. 1/17/2021 Arpan Deyasi, RCCIIT, India 19 22 2 ( ) ( )j D Dm j Dz z z z L+ = + + ∆ Threshold Voltage Variation 2 2 2 2 0 2 D j D Dm D j D L z L z z z z ∆ + + ∆ = + − −
- 20. 1/17/2021 Arpan Deyasi, RCCIIT, India 20 Threshold Voltage Variation 2 2 2 ( ( ) 2 ) D j j D D j Dm L z z z z z z ∆ =− + − − + 1 2 1D D j j z L z z ∆ + −
- 21. 1/17/2021 Arpan Deyasi, RCCIIT, India 21 Threshold Voltage Variation Similarly, 1 2 1S S j j z L z z ∆ + −
- 22. 1/17/2021 Arpan Deyasi, RCCIIT, India 22 where Threshold Voltage Variation 2 ( )D DS F A z V qN ε φ = + 2 S F A z qN ε φ =
- 23. 1/17/2021 Arpan Deyasi, RCCIIT, India 23 ( )TO short channel TO TOV V V− = − ∆ Threshold Voltage Variation VTO: zero-bias threshold voltage ΔVTO: threshold voltage shift
- 24. 1/17/2021 Arpan Deyasi, RCCIIT, India 24 Threshold Voltage Variation 1 2 2 2 S D TO A F D L L V qN C L ε φ ∆ + ∆ ∆ =− 2 2 2 1 2 1 1 2 1 j TO A F D SD j j z V qN C L zz z z ε φ∆ =− × + − + + −