Band nonparabolicity effect on eigenstates
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This document discusses the effect of band nonparabolicity on the eigenstates of DQWTB structures. It describes how the standard parabolic dispersion relation does not accurately model most materials, and introduces a nonparabolic dispersion relation using coefficients. This modifies the wave vectors and lowers the energy values, particularly for higher order states. It also reduces intersubband transition energies and enhances the operating wavelength of photodetectors. The document outlines algorithms to calculate transmission coefficients using the Transfer Matrix Method and Propagation Matrix Method while accounting for nonparabolicity. It notes that quasi-peaks exist in transmission profiles corresponding to finite widths of energy levels.
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This document summarizes a study that used COMSOL Multiphysics software to simulate electric field distribution in electric discharge machining (EDM) and wire EDM processes. The study modeled electric fields using different dielectric systems, varying the inter-electrode gap and supply voltage. Results showed that maximum electric field depends on these parameters. In wire EDM, decreasing the frontal gap was found to increase the electric field angle and reduce side overcut in the workpiece. Overall, the simulation helped predict overcut and optimize process parameters to improve machining efficiency.
www.ijerd.com
International Journal of Engineering Research and Development is an international premier peer reviewed open access engineering and technology journal promoting the discovery, innovation, advancement and dissemination of basic and transitional knowledge in engineering, technology and related disciplines.
We follow "Rigorous Publication" model - means that all articles appear on IJERD after full appraisal, effectiveness, legitimacy and reliability of research content. International Journal of Engineering Research and Development publishes papers online as well as provide hard copy of Journal to authors after publication of paper. It is intended to serve as a forum for researchers, practitioners and developers to exchange ideas and results for the advancement of Engineering & Technology.
IJERD(www.ijerd.com)International Journal of Engineering Research and Develop...
This document presents the design and analysis of a slotted diagonal shaped patch antenna with a hybrid coupler. Theoretical performance is analyzed using ADS software. Measured return loss is -15.65dB at 2.417GHz, agreeing with simulations. Circular polarization is achieved by directly connecting the hybrid coupler to the radiating element. The antenna has a gain of 3.319dB and directivity of 6.98dB, making it useful for wireless applications.
www.ijerd.com
International Journal of Engineering Research and Development is an international premier peer reviewed open access engineering and technology journal promoting the discovery, innovation, advancement and dissemination of basic and transitional knowledge in engineering, technology and related disciplines.
We follow "Rigorous Publication" model - means that all articles appear on IJERD after full appraisal, effectiveness, legitimacy and reliability of research content. International Journal of Engineering Research and Development publishes papers online as well as provide hard copy of Journal to authors after publication of paper. It is intended to serve as a forum for researchers, practitioners and developers to exchange ideas and results for the advancement of Engineering & Technology.
S_parameters.pdf
The document discusses scattering (S) parameters, which describe the electrical behavior of linear electrical networks. It defines S-parameters for one-port and two-port networks, relating the incident and reflected waves. Formulas are provided to calculate S-parameters from ABCD parameters of transmission lines and other elements. As an example, the S-parameters of a quarter-wave transformer matching a 100Ω load to a 50Ω source are calculated.
Metal-Semiconductor Contact
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
Performance evaluation of circular microstrip
This document summarizes the performance evaluation of circular microstrip patch antenna arrays using different dielectric substrate materials. It describes the design and simulation of a circular microstrip patch antenna operating in the S-band frequency range (2.0-2.5GHz) using MATLAB software. The return loss, VSWR, and radiation patterns are analyzed for different dielectric constants. Both uniform and non-uniform antenna arrays are designed, including a linear array and Dolph-Tschebycheff array, and their radiation patterns are generated and compared using MATLAB. The purpose is to evaluate the effect of different dielectric substrate materials on the performance of circular microstrip patch antenna arrays.
Performance evaluation of circular microstrip
This document summarizes the performance evaluation of circular microstrip patch antenna arrays using different dielectric substrate materials. It describes the design and simulation of a circular microstrip patch antenna operating in the S-band frequency range (2.0-2.5GHz) using MATLAB software. The return loss, VSWR, and radiation patterns are analyzed for different dielectric constants. Both uniform and non-uniform antenna arrays are designed, including a linear array and Dolph-Tschebycheff array, and their radiation patterns are generated and compared using MATLAB. The purpose is to evaluate the effect of different dielectric substrate materials on the performance of circular microstrip patch antenna arrays.
The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of Z...
This work is about the analysis of dead time
variation on switching losses in a Zero Voltage Switching
(ZVS) synchronous buck converter (SBC) circuit. In high
frequency converter circuits, switching losses are
commonly linked with high and low side switches of SBC
circuit. They are activated externally by the gate driver
circuit. The duty ratio, dead time and resonant inductor
are the parameters that affect the efficiency of the circuit.
These variables can be adjusted for the optimization
purposes. The study primarily focuses on varying the
settings of input pulses of the MOSFETs in the resonant
gate driver circuit which consequently affects the
performance of the ZVS synchronous buck converter
circuit. Using the predetermined inductor of 9 nH, the
frequency is maintained at 1 MHz for each cycle
transition. The switching loss graph is obtained and
switching losses for both S1 and S2 are calculated and
compared to the findings from previous work. It has
shown a decrease in losses by 13.8 % in S1. A dead time of
15 ns has been determined to be optimized value in the
SBC design.
MODELING OF BUILT-IN POTENTIAL VARIATIONS OF CYLINDRICAL SURROUNDING GATE (CS...
Due to aggressive scaling of MOSFETs the parasitic fringing field plays a major role in deciding its characteristics. These fringing fields are now not negligible and should be taken into account for deriving the MOSFET models. Due to this fringing field effect there are some charges induced in the source/drain extension regions which will change the potential barrier at the source-channel from its theoretical nominal values. In this paper an attempt has been made to model variation of built-in potential variation for a cylindrical surrounding gate MOSFET. The model has been verified to be working in good agreement with the variations of gate length and channel radius.
ECA Unit-2 Topic-9 Digital Content.pptx
This document discusses the AC analysis of a differential amplifier using BJT transistors. It begins by defining different configurations of differential amplifiers such as dual input balanced output. It then covers the AC analysis process, deriving expressions for the voltage gain, input resistance, and output resistance of a dual input balanced output configuration. Several steps of the analysis are shown, including developing the AC equivalent circuit and using Kirchhoff's laws to obtain expressions for voltage gain and other parameters. Examples of the analysis are provided for different configurations.
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A new approach for design of cmos based cascode current mirror for asp applic...
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Radiation patterns account of a circular microstrip antenna loaded two annular
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IRJET- Modeling and Simulation of Electric Discharge Machine (EDM) and WEDM u...
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IJERD(www.ijerd.com)International Journal of Engineering Research and Develop...
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The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of Z...
The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of Z...
MODELING OF BUILT-IN POTENTIAL VARIATIONS OF CYLINDRICAL SURROUNDING GATE (CS...
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Scaling in conventional MOSFET for constant electric field and constant voltage
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Scaling in conventional MOSFETBiot-Savart law
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
Ampere's circuital law
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
Magnetic Potentials
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
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The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
Quantum Hall Effect
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
Dielectrics
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
Electrical Properties of Dipole
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
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Application of Gauss' Law
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
Fundamentals of Coulomb's Law
This document discusses Coulomb's law and some key concepts in electrostatics, including:
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- The electric field intensity and electric flux density are introduced.
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Vector Integration
This document discusses vector calculus theorems including Stokes' theorem and the divergence theorem. Stokes' theorem relates the line integral of a vector field around a closed curve to the surface integral of the curl of the vector field over any surface bounded by the curve. The divergence theorem relates the volume integral of the divergence of a vector field over a volume to the surface integral of the vector field over the boundary surface of that volume. The document provides proofs of these theorems and examples of their applications to problems involving conservative vector fields and evaluating integrals.
Scalar and vector differentiation
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
Coordinate transformation
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
Moletronics
Molecular electronics aims to use electronic molecules as passive or active electronic components. It has advantages over silicon technology such as smaller size (1-3 nm vs 14 nm), faster time cycles (1 fs vs 1 ns), and ability to integrate more gates per square centimeter (1013 vs 108). Major challenges include difficulty experimentally verifying and directly characterizing molecular devices and fully integrating them with silicon technology. Potential applications include sensors, display devices, energy transaction devices, smart materials, and molecular-scale logic and memory devices.
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This document discusses various techniques for crystal growth, including growth from melt, vapor, solution, and solid. It focuses on the Czochralski technique for silicon crystal growth from melt. This technique uses a seed crystal pulled slowly from a silicon melt to form a single crystal ingot. The document provides mathematical formulations to describe the technique and discusses advantages like growth of large oriented crystals and disadvantages like potential melt contamination. It also covers physical vapor deposition, chemical vapor deposition, and modern epitaxial techniques like molecular beam epitaxy.
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Mosfet fundamentals
The document discusses the fundamentals of MOSFETs (metal-oxide-semiconductor field-effect transistors). It describes the structure of an n-channel MOSFET, including the gate, body, source, and drain. It explains the different operating modes - depletion, enhancement - for n-channel and p-channel MOSFETs depending on the applied gate-source voltage. Finally, it notes that MOSFETs are generally considered three-terminal devices due to the body effect, which influences the threshold voltage.
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Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...
This document serves as a comprehensive step-by-step guide on how to effectively use PyCharm for remote debugging of the Windows Subsystem for Linux (WSL) on a local Windows machine. It meticulously outlines several critical steps in the process, starting with the crucial task of enabling permissions, followed by the installation and configuration of WSL.
The guide then proceeds to explain how to set up the SSH service within the WSL environment, an integral part of the process. Alongside this, it also provides detailed instructions on how to modify the inbound rules of the Windows firewall to facilitate the process, ensuring that there are no connectivity issues that could potentially hinder the debugging process.
The document further emphasizes on the importance of checking the connection between the Windows and WSL environments, providing instructions on how to ensure that the connection is optimal and ready for remote debugging.
It also offers an in-depth guide on how to configure the WSL interpreter and files within the PyCharm environment. This is essential for ensuring that the debugging process is set up correctly and that the program can be run effectively within the WSL terminal.
Additionally, the document provides guidance on how to set up breakpoints for debugging, a fundamental aspect of the debugging process which allows the developer to stop the execution of their code at certain points and inspect their program at those stages.
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哪里办理(csu毕业证书)查尔斯特大学毕业证硕士学历原版一模一样
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AT MBB AIRPORT
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Hematology Analyzer Machine - Complete Blood Count
The CBC machine is a common diagnostic tool used by doctors to measure a patient's red blood cell count, white blood cell count and platelet count. The machine uses a small sample of the patient's blood, which is then placed into special tubes and analyzed. The results of the analysis are then displayed on a screen for the doctor to review. The CBC machine is an important tool for diagnosing various conditions, such as anemia, infection and leukemia. It can also help to monitor a patient's response to treatment.
Advanced control scheme of doubly fed induction generator for wind turbine us...
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
BRAIN TUMOR DETECTION for seminar ppt.pdf
BRAIN TUMOR DETECTION
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CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
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CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
Band nonparabolicity effect on eigenstates
- 1. Course: Quantum Electronics Arpan Deyasi Topic: Effect of Band nonparabolicity on Eigenstates 1 Arpan Deyasi, RCCIIT 1/17/2021
- 2. 1/17/2021 2Arpan Deyasi, RCCIIT Z DQWTB structure
- 3. 1/17/2021 Arpan Deyasi, RCCIIT 3 Graphical representation of Transmission Coefficient E0 E T(E) E1 E2 E3
- 4. 1/17/2021 Arpan Deyasi, RCCIIT 4 Schrödinger Equation for well region for V=0 2 2 22 ( ) ( ) ( ) 0 d z z z dz ψ κ ψ+ = * 2 2 2 ( )wm z E κ = Schrödinger Equation for barrier region 2 2 22 ( ) ( ) ( ) 0 d z z z dz ψ κ ψ+ = for V=V0 ( )* 0 1 2 2 ( )bm z E V κ − =
- 5. Parabolic Dispersion Relation 1/17/2021 5Arpan Deyasi, RCCIIT Ideal; most of the materials do not obey the relationship 2 2 * 2 E m κ = E k
- 6. 1/17/2021 Arpan Deyasi, RCCIIT 6 2 2 2 * (1 ...) 2 E E E m κ α β+ + + = Nonparabolic Dispersion Relation E k
- 7. 1/17/2021 7Arpan Deyasi, RCCIIT α, β,…. are nonparabolic coefficients Expressions of κ1 & κ2 will change Magnitudes of band nonparabolic coefficients control the energy states
- 8. 1/17/2021 8Arpan Deyasi, RCCIIT Modified wave-vectors * 2 2 2 ( ) (1 )wm z E Eα κ + = for well region Consider first-order band nonparabolicity * 0 1 2 2 ( )[ (1 ) ]bm z E E Vα κ + − = for barrier region
- 9. 1/17/2021 Arpan Deyasi, RCCIIT 9 Graphical representation of Transmission Coefficient E1p E T(E) E2p E3p E4p E1n E2n E3n E4n ΔE21n ΔE21p ΔE32n ΔE32p ΔE31n ΔE31p N P
- 10. 1/17/2021 10Arpan Deyasi, RCCIIT Effect of nonparabolic coefficients 1. Energy values will be lowered 2. The effect will be more significant for higher order states 3. Corresponding intersubband transition energy will be reduced 4. Operating wavelength of the photodetector will be enhanced
- 11. 1/17/2021 11Arpan Deyasi, RCCIIT Algorithm to calculate transmission coefficient using TMT S1: Input parameters: ‘a’, ‘b’, ‘mb *’, ‘mw *’, ‘V0’ S2: Consider energy range of interest (E<V0) S3: Calculate wave vectors ‘κ1’ and ‘κ2’ S4: Calculate interface matrices ‘Mi’ S5: Calculate composite interface matrix ‘M’ S6: Calculate transmission coefficient from ‘M11’
- 12. 1/17/2021 Arpan Deyasi, RCCIIT 12 Algorithm to calculate transmission coefficient using PMM S1: Input parameters: ‘a’, ‘b’, ‘mj *’, ‘Vj’ S2: Consider energy range of interest (E<V0) S3: For energy ‘Ej’, calculate wave number ‘κj’ for each position in the potential ‘Vj’ S5: Consider generalized length ‘Lj’ between two consecutive points S4: Calculate junction matrix ‘Pjunc(j)’ between any two consecutive points inside the structure
- 13. 1/17/2021 Arpan Deyasi, RCCIIT 13 Algorithm to calculate transmission coefficient using PMM S7: Calculate total propagation matrix ‘Pprop(j)’ as a Cartesian product of junction matrix and step matrix S6: Calculate step matrix ‘Pstep(j)’ between any two consecutive points inside the structure S8: Repeat it for every points inside the structure S9: Calculate transmission coefficient from ‘P11’
- 14. 1/17/2021 Arpan Deyasi, RCCIIT 14 Quasi-peak As per the transmission coefficient profile, eigenenergy states are obtained from sharp peaks This implies are energy states are very thin levels Practically all energy bands consist of multiple energy levels Henceforth, there should exist finite width of energy peak
- 15. 1/17/2021 Arpan Deyasi, RCCIIT 15 Quasi-peak Practically, one small peak is associated with every principle peak with a small finite energy difference The second peak is called quasi-peak
- 16. 1/17/2021 Arpan Deyasi, RCCIIT 16 E1 E T(E) E2 E3 E4 Quasi-peak in Transmission Coefficient profile E1qp E2qp E3qp E4qp