This document discusses carbon nanotube field-effect transistors (CNTFETs) as a potential substitute for MOSFETs. CNTFETs could help overcome limitations of MOSFET scaling by providing higher carrier mobility, excellent electrostatics, and gate control. CNTFETs exhibit advantages like better threshold voltage and subthreshold slope control as well as higher current density compared to MOSFETs. However, mass production of CNTFETs faces challenges related to defects, failure rates, and degradation when exposed to oxygen that need to be addressed before widespread implementation.
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
New technology Model for 1 nm Transistors better than FIN-FET Technology.This slide Tells you in general about the nanotubes, how they are formed and why they are better than MOSFETs
Analytical Modeling of Tunneling Field Effect Transistor (TFET)Abu Obayda
Tunneling Field-Effect Transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage, VDD, scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced unidirectional conduction, enhanced on-state Miller capacitance effect and steep switching at low voltages, TFET based circuit design requires strong interactions between the device-level and the circuit-level to explore the performance benefits, with certain modifications of the conventional CMOS circuits to achieve the functionality and optimal energy efficiency. Because TFET operates at low supply voltage range (VDD<0.5V) to outperform CMOS, reliability issues can have profound impact on the circuit design from the practical application perspective. In this thesis report, we have analyzed the drain current characteristics of TFET with respect channel length. From our simulation result, it is observed that the drain current is minimum with respect to increasing channel length for Si and the drain current decreases for all the materials when the channel length is increased and after normalization lowest value of drain current is got for 10nm channel length.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice
The name ‘graphene’ comes from graphite + -ene = graphene
Importance of Summer Camp for Your Childrenethanjordan
If you've ever been to camp, you are not surprised to hear about the importance of summer camp for your children. But if you didn't go to camp as a child, here we discuss some most important benefits of summer camp for your children.
Structural and Optical properties of Multiwalled Carbon Nanotubes Modified by...TELKOMNIKA JOURNAL
Structure, chemical, and physical properties of Multiwalled Carbon Nanotubes (MWCNTs) after
modification by dielectric barrier discharge (DBD) at atmospheric pressure is investigated using
Transmission Electron Microscopy (TEM), Raman and Uv-vis-NIR spectroscopy. Effects of plasma
treatment time on MWCNTs are analyzed. TEM result shows that during the short period of plasma
treatment time of 5 minutes, the tube surface experienced a few damages. With increase in plasma
treatment time, the tube surface is damaged to a certain extent. Intensity ratio, ID/IG through Raman
analysis shows a good agreement with TEM. The values of ID/IG of the modified MWCNTs are larger than
those of pristine MWCNTs. An increase of ID/IG indicates that considerable defects are produced on the
surfaces of MWCNTs. The treated MWCNTs has energy band gap compared to zero band gap of
untreated MWCNTs. It is believed that the defect site of MWCNTs can modify the electronics properties of
MWCNTs from being metallic to semiconducting structure, which is applicable for almost all electronics
device applications.
Designing High-Speed, Low-Power Full Adder Cells Based on Carbon Nanotube Tec...VLSICS Design
This article presents novel high speed and low power full adder cells based on carbon nanotube field effect
transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and
second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named
CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divided into
two modules, causing Sum and Cout signals are produced in a parallel manner. All inputs have been used
straight, without inverting. These designs also used the special feature of CNFET that is controlling the
threshold voltage by adjusting the diameters of CNFETs to achieve the best performance and right voltage
levels. All simulation performed using Synopsys HSPICE software and the proposed designs are compared
to other classical and modern CMOS and CNFET-based full adder cells in terms of delay, power
consumption and power delay product.
Carbon Nanotube Based Circuit Designing: A ReviewIJERDJOURNAL
ABSTRACT:- A new material and its associated device which have potential to replace Si and CMOS and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT) and its associated transistor, the carbon nanotube field effect transistor (CNTFET). CNT possesses unique properties that make it a promising future material. Similarly, CNTFET is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of CNTFET based analog and digital circuits has been presented. It has been observed that the use of CNTFET can improve the performance of both analog and digital circuits. The work will be of utmost use to the people working in the field of CNT based analog and digital circuit designing.
Performance analysis of cntfet and mosfet focusing channel length, carrier mo...IJAMSE Journal
Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this review, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor(MOSFET). At first, we have discussed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature of ballistic transport
and profound impact of gate capacitance along with dielectric constant on transconductance have also
have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed
switching devices. Finally, a comparative study on the characteristics of contact resistance over switching
capacity between CNTFET and MOSFET has been addressed.
DESIGNING HIGH-SPEED, LOW-POWER FULL ADDER CELLS BASED ON CARBON NANOTUBE TEC...VLSICS Design
This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one named CN9P4G) and second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divided into two modules, causing Sum and Cout signals are produced in a parallel manner. All inputs have been used straight, without inverting. These designs also used the special feature of CNFET that is controlling the threshold voltage by adjusting the diameters of CNFETs to achieve the best performance and right voltage levels. All simulation performed using Synopsys HSPICE software and the proposed designs are compared to other classical and modern CMOS and CNFET-based full adder cells in terms of delay, power consumption and power delay product.
CNTFET Based Analog and Digital Circuit Designing: A ReviewIJMERJOURNAL
ABSTRACT: Silicon has been a material of choice for the last many decades and more than 95% of electronics devices are from silicon. However, silicon has reached to its saturation level and extracting more and more performance is difficult and costly now. A new material which has a potential to replace Si and can extend the scalability of devices below 22 nm is the carbon nanotube (CNT). CNT is a wonderful material possesses unique properties that make it a promising future material. CNT based field effect transistor (Cntfet) is a promising basic building block to complement the existing silicon based MOSFET and can result in the extension of the validity of Moore's law further. CNTFT has been used extensively in realizing electronics circuits. This paper presents the state of the art literature related to carbon nanotubes, carbon nanotube field effect transistors and CNTFET based circuit designing. A review of Cntfet based analog and digital circuits has been presented. It has been observed that the use of CNTFET has improved the performance of both analog and digital circuits. The work will be very useful to the people working in the field of CNT based analog and digital circuit designing.
CNFET BASED BASIC GATES AND A NOVEL FULLADDER CELLVLSICS Design
In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).
Effect of Chirality and Oxide Thikness on the Performance of a Ballistic CNTF...IJECEIAES
Since the discovery of 1D nano-object, they are constantly revealing significant physical properties. In this regard, carbon nanotube (CNT) is considered as a promising candidate for application in future nanoelectronics devices like carbon nanotube field effect transistor (CNTFET). In this work, the impact of chirality and gate oxide thikness on the electrical characteristics of a CNTFET are studied. The chiralities used are (5, 0), (10, 0), (19, 0), (26, 0), and the gate oxide thikness varied from 1 to 5 nm. This work is based on a numerical simulation program based on surface potential model. CNTFET Modeling is useful for semiconductor industries for nano scale devices manufacturing. From our results we have observed that the output current increases with chirality increasing. We have also highlighted the importance of the gate oxide thickness on the drain current that increases when gate oxide is thin.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
2. Introduction
When further scaling down MOSFET, serious limits in fabrication&
performance
In particular five different short-channel effects can be distinguished:
1. drain-induced barrier lowering and punchthrough
2. surface scattering
3. velocity saturation
4. impact ionization
5. hot electrons
And also self oscillation of MOSFET due to parasitic capacitances
2
3. Solutions to overcome
Modification on existing structures & technologies
High - K insulating material, metal gate electrode
Using new materials to replace silicon MOSFETs
3
5. Role of chirality vector
depending on angle of arrangement along the tube
If n=m or n-m = 3i then it behaves like a metal
Otherwise it behaves like a semiconductor
Diameter SWCNT(~1nm) ; where a0 = 0.142nm
5
6. CNTFET
Formed by CNT connecting
two metal electrodes.
Gate electrode is separated
CNT by thin oxide film.
There is no scattering in the CNT channell
The net current is carried by carriers
with energy between μ1 and μ2 that
travel from contact 1 to contact 2.
L = |Ch| = a *
6
7. Why carbon nanotubes?
Single walled carbon nanotube is a potential channel material for future
high performance logic circuits.
High carrier mobility from 3000 to 10000 cm2/v-s
Excellent electrostatics
Excellent gate control.
7
9. advantages
Better control over channel formation
Better threshold voltage
Better subthreshold slope
High electron mobility
High current density
High transconductance
Good stiffness, strength
9
13. Drawbacks of CNTFET
Manufacturing CNTFET-based circuits will differ from current practice with
conventional silicon Technologies so the fault/defect models must be
revisited.
the defect and failure rate at device and circuit level is expected to be
much higher than with traditional CMOS.
The carbon nanotube degrades in a few days when exposed to oxygen.
There have been several works done on passivating the nanotubes with
different polymers and increasing their lifetime.
So many difficulties in mass production, production cost.
The multi-channeled CNTFETs can keep a stable performance after several
months, while the single-channeled CNTFETs are usually out of work after a
few weeks in the ambient atmosphere.The multi-channeled CNTFETs keep
operating when some channels break down, this won’t happen in the
single-channeled ones.
13
