Advances in Ceramic Capacitors

1. Advances in Ceramic Capacitors
How advances in Class 1 and Class 2 ceramic
capacitors are paving the way for next generation
technologies
November 2017
KEMET EMEA Webinar

2. Ceramic Capacitors

3. Design

4. Ceramic Capacitor Structure
C = Design Capacitance
K = Dielectric Constant
A = Overlap Area
d = Ceramic Thickness
n = Number of Electrodes
Electrodes
Ceramic
Termination
+
-
Capacitances in parallel are additive
CT=C1+C2+C3+….Cn

5. Multilayer Ceramic Capacitor (MLCC)
Typical Construction
Ceramic Dielectric
Internal Electrode (Ni for
BME, Ag/Pd for PME)
Termination (External Electrode,
Cu for BME, Ag for PME)
Plated Sn finish
for Solderability
Barrier Layer
(Plated Ni)

6. Dielectric Technology
C0G
PME &
BME
200oC
U2J
BME
X8R
BME
X8L
BME
X7R
PME &
BME
175oC
X5R
BME
Y5V
BME
Z5U
BME
BP
PME
C0G @
Rated V
BX
PME
X7R
+15/25% @
Rated V
BR
PME
X7R & +15/-
40% @
Rated V
Commercial & Automotive Grade Dielectric Materials
Military & Hi-Rel Dielectric Materials
Class 1 Class 2

7. Ceramic Capacitor Design Considerations
Characteristic Design Considerations Technology Impact
CV (Volumetric
efficiency)
Capacitance within a given volume (case
size). HiCV capacitors have more capacitance
for a given case size.
Miniaturization, higher density
designs
Operating
Temperature
Sustained minimum and maximum operating
range.
Harsh environments
Operating Voltage Max DC operating voltage Higher voltage designs
Resistive and
Inductive parasitics
Low loss dielectrics and electrodes providing
low ESR over a broad frequency range while
form factors drive inductive parasitics.
Higher ripple current applications,
High power designs, RF, high speed
switching
Mechanical
Robustness or Fail-
Safe Solutions
SMD, leaded or through hole, stacks, flexible
terminations
Harsh environments including high
vibration, shock, flex resistance
Capacitance
Stability
Stability of capacitance over temperature,
voltage, and time
Use in tuning applications, resonator
circuits, bulk capacitance solutions,
etc.

8. AUTOMOTIVE DEF & AERO DOWNHOLE MEDICAL
APPLICATIONS
Power Train
Safety & Chassis
Advanced Driver Assist
Infotainment
Guidance Systems
Space / Launch
Radar
Communications
Exploration
Drilling
Monitoring
Large: X-Ray, CAT
Portable: Monitor &
Therapy
Implantable: Defib /
Pacemaker, Pain
Management
Markets and Applications that Drive
Capacitor Technology
INDUSTRIAL HIGH VOLTAGE TELECOM COMMERCIAL
APPLICATIONS
High Power
Instrumentation
Motor Controls / Automation
Welders
Power Supplies
Lighting
Heavy Industrial
Instrumentation
Wireless infrastructure
Base Stations
Keyless entry
Military comms
Cloud Infrastructure
Servers
Power Supplies

9. Trends Drive Technology
What fuels KEMET’s R&D…
Ceramic Impact
Cloud Infrastructure
Power Supplies
Ripple Capability
Connected, Electrified, Autonomous
Flex-Term Battery Line
Hybrid/EV, 48V line
ESD protection
UTH ≥ 150°C
SATELLITES
1,381 Operational
202 Launches in 2015
$208B Industry, 3-5% growth
Bulk Capacitance
Non-MIL-PRF needs
A new server is added
to the cloud every 600
smartphones.
Electronic content in
cars growing 5% Y/Y
DOWNHOLE
EMERGING TECH
SIC / GAN SEMI’s
DC LINK Applications
High Voltage
High Temp
High Frequency
MCM’s
HT 175°C to
300°C+
Bulk Capacitance
Commercialization of Space
Advances in Radar, Drones and
Robotics
More COTS, BME HiREL

10. Roadmapping
Capacitor
Technology
Products
Market
Technology
Trends
Materials –
Dielectric, Electrode,
Terminations,
Molding, bonding
Manufacturing
Processes
Equipment
Environmental
Regulatory
Performance
Capacitor Type
Ceramic, Ta, Film,
Electrolytic, etc
Form factors
KEMET’s focus: Detect key market technology trends to create
the right product using the right technology

11. What are some of those Trends?
48V Automotive Systems
Power Efficiency for Data Centers
High Temperature Downhole (>150C)
Wide Bandgap Semiconductors for Power Conversion

12. Key Trends that are Driving Technology
• 48V Automotive Systems
• Power Efficiency for Data Centers
• High Temperature Downhole (>150C)
• Wide Bandgap Semiconductors for Power Conversion

13. Integration of 48V System
• ICE, Mild Hybrid, Hybrid vehicles
• Along side of 12V system
• 48V system powers more demanding
functions. A/C, Power steering, electric
supercharges, starter, regenerative
braking
• 12V system continues to support lower
power functions
Why the Trend
• Improved CO2 emissions
• 10%-15% increase in fuel economy
• Increased electronic content
• Requires more power
• Reduces system losses
• Higher Voltages = Less Current = Less
i2R losses
48V Automotive Systems

14. 48V Automotive Systems
Matching Capacitor Technology with the Trend
Capacitor (Product)
Requirement
48V Automotive Trend
Higher voltage class 1 and
class 2 MLCCs
• Automotive grade
• HiCV
• 100V rated minimum
• Flex termination
• RoHs
Higher voltage systems up to
48V to support more systems
and more efficient operation.
• HiCV class 2 dielectric
• Higher cap C0G dielectrics
• Robust termination system
Capacitor (Technology)
Requirement

15. 48V Automotive Systems
KEMET X7R Automotive SMD FT-Cap
Case
Size
(in)
Case
Size
(mm)
Rated Voltage (Vdc) Minimum
Available
Capacitance
6.3 10 16 25 50 100 200
Maximum Available Capacitance
0603 1608 470nF/ 1.0µF 470nF/ 1.0µF 470nF/ 1.0µF 220nF 150nF 47nF 10nF 180pF
0805 2012 10µF 10µF 4.7µF 1.0µF / 4.7µF 0.68µF 220nF 56nF 180pF
1206 3216 10µF 10µF 10µF 10µF 2.2µF/ 4.7µF 1.0µF 150nF 1nF
1210 3225 22µF 22µF 10µF 10µF 4.7µF 2.2µF 220nF 2.2nF
1808 4520 180nF 56nF 18nF 4.7nF
1812 4532 10µF 4.7µF 3.3µF 470nF 6.8nF
1825 4564 2.2µF 1.0µF 1.0µF 22nF
2220 5650 22µF 10µF 1.0µF 1.0µF 82nF
2225 5664 2.2µF 1.2µF 1.2µF 47nF
-Currently Available -Under Development -Recently Released

16. 48V Automotive Systems
KEMET U2J Automotive SMD FT-Cap
Class I Dielectric
Pb Free Reflow Film Cap Alternative
ESR lower than Film Caps
1.2x – 2.1x Cap of C0G
Low VCC
Temperature Compensating -55ºC to +125C
Standard or Flexible Termination
Launched: Q2 2017

17. Case
Size
(Inches)
Case
Size
(mm)
Rated
Voltage (Vdc)
Maximum Available
Capacitance (nF) CAP Increase
vs. current C0G
C0G U2J U2J Ext
0402 1005
10 / 16 2.2 2.2 4.7 114%
50 1.5 1.8 20%
100 1.0 1.0
0603 1608
10 15 2.2 33 120%
16 15 15
25 6.8 10 47%
50 6.8 10 47%
100 4.7 6.8
0805 2012
10 47 56 100 113%
16 / 25 47 56 19%
50 22 47 114%
100 15 33 120%
1206 3216
10 100 220 330 230%
16 / 25 100 220 120%
50 82 150 83%
100 47 100 113%
1210 3225
16 / 25 220 330 50%
50 150 270 80%
100 100 150 50%
1812 4532
25 220 470 114%
50 220 470 114%
100 150 220 47%
2220 5650
10 / 16 / 25 / 50 470 1000 (1.0uF) 113%
100 330 470 42%
48V Automotive Systems
KEMET U2J Automotive SMD FT-Cap
Currently Available Under Development Target Release: Q2 2018

18. Key Trends that are Driving Technology
• 48V Automotive Systems
• Power Efficiency for Data Centers
• High Temperature Downhole (>150C)
• Wide Bandgap Semiconductors for Power Conversion

19. Energy Efficient Data Centers
• Efficient power conversion
• Switch to 48V architecture
• LLC Resonant topologies operating at
higher frequencies
Power Efficiency for Data Centers
Why the Trend
• Data centers are predicted to consume
around 7% of the World’s electricity in
10 years based on current growth rates
and technology.
• U.S data centers are forecasted to consume 140B kWhrs by 2020.
• Inefficiencies in power conversion:
• Very high operating costs
• Large carbon footprint
• 48V architecture and LLC resonant converters dramatically improve efficiency
• 48V bus reduces conversion steps in the system and leads to lower losses in the bus
bars
• Using LLC resonant topologies allows for higher frequency operation reducing the size
and complexity of passive components such as capacitors and inductors
• Both reduce the need for cooling systems

20. Power Efficiency for Data Centers
Matching Capacitor Technology with the Trend
Capacitor (Product)
Requirement
48V Architecture and
LLC Resonant
Converter Trend
• Higher CV ultra-stable
capacitance with voltage
and temperature
• Small footprint
• Very low loss
• High current handling
capability
• Very low inductance
• Higher voltage systems up
to 48V
• Implementation of LLC
resonant converter for more
efficient power conversion
• Stable class 1 dielectric
• Low loss materials
• Low thermal resistance
Capacitor (Technology)
Requirement

21. Power Efficiency for Data Centers
KEMET U2J Leadless Stack
US Patents 8,902,565 B2 & 9,472,342 B2
New Technology!!
OR
TLPS High Temperature
Bonding
KEMET’s U2J
Technology
• Transient Liquid Phase
Sintering
• Forms a metallurgical bond
between 2 surfaces
• High Failure temperature
• Higher CV ultra-stable
capacitance with voltage
and temperature
• Very low loss
• High frequency
• High current handling
capability
• Low inductance
• Small PCB footprint
• Extremely low resistance
and inductance
• Very high ripple current
capability
• Excellent thermal properties
• Standard and low-loss
(vertical) orientation)
Compact Leadless
Stack Solution

22. Power Efficiency for Data Centers
KEMET U2J Leadless Stack

23. Key Trends that are Driving Technology
• 48V Automotive Systems
• Power Efficiency for Data Centers
• High Temperature Downhole (>150C)
• Wide Bandgap Semiconductors for Power Conversion

24. High Temperature Downhole
Electronics for Harsh Downhole Environments
• Increased use of electronics at further depths
below the surface……smarter tools
• Growth in Gamma-Ray Logging tools
• Sensors in environments that can exceed 200oC
and high vibration
• Need for components that can withstand harsh
environments
Why the Trend
• More logging and data collection for drilling
tools enabling better success
• Companies to going to greater depths to reach
oil deposits

25. High Temperature Downhole
Matching Capacitor Technology with the Trend
Capacitor (Product)
Requirement
Downhole Tools for
Harsher Environments
Trend
• Higher temperature
operation >150oC and even
up to 300oC!!!
• Reliability under harsh
conditions
• Vibration resistant
• Deeper oil drilling exposing
electronics to higher
temperatures and harsher
environments
• Smarter drilling requiring
more sophisticated
electronics
• Dielectrics with reliable
operation above 150oC
• Advanced lead frame
technology
• High Temperature solder
attachment technology
Capacitor (Technology)
Requirement

26. High Temperature Downhole
High Temperature Product Portfolio
BME Technology Leaders
First-to-Market Capacitance Values
Patented BME Dielectric Technology (Class I)
Patented C3 260ºC technology
Extensive Dielectric Portfolio
Large Case HV/HT 200°C (2824 – 4540)

27. High Temperature Downhole
High Temperature Product Families
SMD (BME )
- 200ºC C0G
- 0402 - 4540
- Pulse Discharge
- Gold & SnPb Finish
Axial (PME)
- C3 Technology
Radial (PME)
- C3 Technology
SMD (BME )
- Ultra Stable X8R
- X8L
KPS (BME ) J-Lead
- X8L
Radial (PME)
- C3 Technology
SMD (BME )
- C0G
Radial (BME)
- Molded
Aximax
- Ultra Stable X8R
- X8L
SMD (BME)
- 175ºC X7R
- Flex Term
SMD (BME)
- 260ºC C0G
- Au Plating
HT Stacks
- 200°C C0G

28. High Temperature Downhole
200ºC C0G SMD MLCC
Patented C0G Dielectric Technology
Voltage and Temperature Stable
Capacitance up to 470nF
EIA 0402 – 2220 Case Sizes
DC Voltage Ratings of 16 – 200V
Superior Performance over X7R Technology
Gold(Au) Termination Finish Options

29. High Temperature Downhole
200°C Capable / Gold (Au)
+200°C operating temperature range
Flash, Thin & Thick Gold Options
Soldering, Epoxy & Wire Bonding Applications
Ordering Option E = Flash Gold / 1.97-11.8µin
Ordering Option F = Thin Gold / 30 - 50µin
Ordering Option G = Thick Gold / 100µin min.
Eliminates Tin-Whisker Susceptibility

30. High Temperature Downhole
200ºC High Voltage C0G SMD MLCC
Reliable Performance up to 200ºC
Superior Performance over X7R Dielectric Technology
DC Voltage Ratings of 500 – 2,000V
EIA 0805 – 4540 Case Sizes
Patented C0G Dielectric Technology
Voltage and Temperature Stable
Capacitance up to 150nF
Large Case 2824 - 4540

31. High Temperature Downhole
200°C Capable / C0G and X7R Dielectrics
Operating Temperature Range -55ºC to 200ºC
High Reliability in Extreme Environments
C0G and X7R Dielectrics
DC Rating Voltage of 50V, 100V and 200V
Capacitance Range from 1.0pF to 1.0uF
Military Equivalent (CK05 andCK06) case sizes

32. High Temperature Downhole
KPS-MCC 200°C SMPS Stacks
COG Dielectric
-55°C to +200°C operating temperature range
Case Codes 3, 4 and 5
DC Rating Voltage 50 – 2000V
Capacitance offerings from 4.7 nF up to 2.0 uF
tolerances ±5%, ±10%
No piezoelectric noise
Extremely low ESR and ESL
High thermal stability & High ripple current capability
Non-polar device, 100% silver plated lead finish
Robust mechanical design
Vibration resistant at high temperatures
Patent pending Lead frame technology
Excellent reliability for thermal cycling and thermal shock

33. High Temperature Downhole
C0G SMD 260ºC Capable
Case Sizes (0402 – 1210)
-55°C to +260°C operating temperature range
DC Voltage Ratings from 25- 100
Capacitance from 0.5pF – 15nF
No piezoelectric noise
Excellent AC performance
Extremely low ESR and ESL

34. High Temperature Downhole
KPS+ Multichip Stacks - 200°C
COG Dielectric
-55°C to +200°C operating temperature range
DC Rating Voltage 200 – 2000V
Capacitance offerings from 15 nF up to 1.2 uF
tolerances ±5%, ±10%
No piezoelectric noise
Extremely low ESR and ESL
High thermal stability & High ripple current capability
Non-polar device, 100% silver plated lead finish
Robust mechanical design
Vibration resistant at high temperatures
Patented Lead frame technology
Excellent reliability for thermal cycling and thermal shock

35. Key Trends that are Driving Technology
• 48V Automotive Systems
• LLC/LC Resonators for Server Applications
• High Temperature Downhole (>150C)
• Wide Bandgap Semiconductors for Power Conversion

36. Wide Bandgap Semiconductors
Power Conversion
Power Converter
DC or AC DC or AC
Input Output
Design
Goals
Size Weight Efficiency
Ideal=100%
Converting one type of power to another
DC-DC
DC-AC
AC-DC

37. Wide Bandgap Semiconductors
Power Conversion
Chargers HEV/EV
Transportation
Solar Energy
Wind Turbine
ServersConsumer Electronics

38. Wide Bandgap Semiconductors
Power Conversion
Traditional power converters  Si based switching
Pros
• Long history of use in power applications
• Widely studied and understood including
limitations
• Inexpensive solution due to high volumes
and manufacturing improvements
Cons
• Restricted to <150C
• Restricted to lower frequencies and
switching speeds due to increased losses
• Restricted to lower voltages in a small form
factor due to energy band-gap
• Extensive and bulky cooling for higher
power applications
• Larger passives (capacitors and
inductors) to support lower frequency
operation
• Larger Si semiconductor packages for
higher voltage operation
Not efficient

39. Wide Bandgap Semiconductors
Power Conversion
Compared to Si, Wide Band Gap (WBG) Semiconductors can operate at:
• Higher temperatures  Reduced need for cooling systems
• Higher frequencies  Smaller passives (capacitors/inductors)
• Higher voltages  Higher density semiconductor packages.
Conversion
Efficiency
Si Based WBG
Based GaN
or SiC
DC to DC 85% 95%
AC to DC 85% 90%
DC to AC 96% 99%
SiC GaNWBG
SemiconductorsSilicon Carbide Gallium Nitride

40. Wide Bandgap Semiconductors
Source: GaN and SiC for power electronics applications report, Yole Development, July 2015

41. Wide Bandgap Semiconductors
System Overview
1 AC Harmonic Filter 3Φ 2 Snubber 3 DC Link
Typical Capacitor Types:
0 EMI / RFI
Filter 1Φ
AC/DC
Converter
DC/AC
Inverter
1 1
2 2
3
AC ~
Power
Source
AC ~
Power
Load
System Overview:
0

42. Wide Bandgap Semiconductors
Matching Capacitor Technology with the Trend
Capacitor (Product)
Requirement
WBG Semiconductor
Trend
Smaller, low ESR, low ESL low
loss capacitors with high dV/dt
& current handling capability
Reliable performance at higher
voltages
Reliable performance at
elevated temperatures ≥ 125oC
with robust mechanical
performance.
Packaging close to the hot
semiconductor to:
Lower ESL
Minimize cooling costs
Higher Switching Frequencies
20kHz → 100kHz → 100’s
MHz
Higher Operating Voltages
400V  900V  1200V 
1700V
Higher Junction Temperatures
105oC → 125oC → 200oC+
Low loss dielectric and
electrode system with surface
mount capability (no leads)
Dielectric with high breakdown
voltage.
Low loss dielectric and
termination system reliable at
and above 150oC
Capacitor (Technology)
Requirement

43. Wide Bandgap Semiconductors
Polypropylene Film to MLCC
• For DC-Link Capacitors:
• Lower capacitance required
promotes miniaturization due to:
• Increasing switching frequency
• Higher voltages
• Lower capacitance is within the
range of MLCC.
• But these need must be:
• Extremely reliable
• High temperature capable
• High voltage
• High current capable
• Mechanically robust

44. Wide Bandgap Semiconductors
Example: DC Link for 400V with 10% Ripple
*
* Source: Prof. R. Kennel, Technical University Munich, Germany

45. 3640 0.22µF 500V 150oC
Part Number & Properties
CKC 33 C 224 K C G A C TU
Case Size Specification/ Capacitance Capacitance Termination Packaging
(L"x W") Series Code (pF) Tolerance Finish (Suffix / C-Spec)
CKC = KC-LINK 33 = 3640 C = Standard 2 Sig. Digits + K = ±10% C = 500 V G = C0G A = N/A C = 100% Matte Sn TU= 7" Reel, Unmarked
Number of Zeros
Series
Rated Voltage
(V)
Dielectric
Subclass
Designation

46. COG Dielectric
-55 to +150°C operating temperature range
1812, 2220 & 3640 Case Sizes
DC Rating Voltage 500 – 1700V
Capacitance offerings 6.2 nF up to 470 nF
tolerances ±5%, ±10%
Commercial and Automotive Grades
AEC Q200 Qualified
Flex Termination option on 1812 & 2220 Case Sizes
100%Sn Finish

47. Summary
• KEMET continues to monitor ongoing trends in the industry.
• Roadmapping is key tool to match key technology to create the right product
for the right application.
• This presentation covered just a few of the key trends we’re continuing to
monitor and create solutions for:
• 48V Automotive Systems
• Power Efficiency for Data Centers
• High Temperature Downhole (>150C)
• Wide Bandgap Semiconductors for Power Conversion

48. Thank You!!!
Mark R. Laps
Ceramic Business Unit
KEMET Electronics
Cell Phone: +1-864-399-4879
Office Phone: +1-864-963-6383
www.kemet.com | marklaps@kemet.com