The document discusses the small signal model of a field effect transistor (FET). It describes how the FET can be modeled as a voltage-controlled current source with transconductance gm in the linear region of its transfer characteristics. The model includes a drain resistance rd and shows the FET's current id is equal to gmvgs + vds/rd. It also defines other key parameters like the amplification factor μ and how capacitances like Cgs impact the model at high frequencies.