Bipolar junction transistors (BJTs) are three-terminal semiconductor devices consisting of two pn junctions. There are two types, NPN and PNP, depending on the order of doping. BJTs can operate as amplifiers and switches by controlling the flow of majority charge carriers through the base terminal. Proper biasing is required to operate the transistor in its active region between cutoff and saturation. Common configurations include common-base, common-emitter, and common-collector, each with different input and output characteristics. Maximum ratings like power dissipation and voltages must be considered for circuit design and temperature derating.
The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
So this applied voltage generate the electric field within the device and by controlling these electric field we can control the flow of current through the device.
The three terminals of the FET are known as Gate, Drain, and Source.
It is a voltage controlled device, where the input voltage controls by the output current.
In FET current used to flow between the drain and the source terminal. And this current can be controlled by applying the voltage between the gate and the source terminal.
So this applied voltage generate the electric field within the device and by controlling these electric field we can control the flow of current through the device.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
This presentation contains the basic information you need to know about operational amplifier.
I have tried to cover all the basic info. If anything is left out or you have any suggestions i will appreciate it.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
I presented this slid in my last presentation about bipolar junction transistor configuration.Now I'm sharing this with all of you guys it can be helpful for you.
Look at the beautiful view of forgiveness of mistakes.
Thank you
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
This presentation contains the basic information you need to know about operational amplifier.
I have tried to cover all the basic info. If anything is left out or you have any suggestions i will appreciate it.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
I presented this slid in my last presentation about bipolar junction transistor configuration.Now I'm sharing this with all of you guys it can be helpful for you.
Look at the beautiful view of forgiveness of mistakes.
Thank you
Introduction to feedback (block diagram and types of feedback) , Analysis at middle, low and high frequency of multi-stage amplifier with RC coupling and direct coupling, cascade amplifiers-Darlington Pair.
To Download this click on the link below:-
http://www29.zippyshare.com/v/42478054/file.html
Number System
Decimal Number System
Binary Number System
Why Binary?
Octal Number System
Hexadecimal Number System
Relationship between Hexadecimal, Octal, Decimal, and Binary
Number Conversions
This is the edited version of the investigatory project on physics with different topic(To construct a switch using transistor and plot a graph bw input output voltage) originally created by rahul only intention to upload this project is to help other class 12 appearing students ................... so they do not have to kill there time in making these useless projects THANKS HOPE IT HELPED ................comment what you think...................................
To download -https://clk.ink/MS2T
this will lead to a google drive link./
its a ppt based on the topic no. system.
it covers all the basics of ninth class cbse.
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
PHP Frameworks: I want to break free (IPC Berlin 2024)Ralf Eggert
In this presentation, we examine the challenges and limitations of relying too heavily on PHP frameworks in web development. We discuss the history of PHP and its frameworks to understand how this dependence has evolved. The focus will be on providing concrete tips and strategies to reduce reliance on these frameworks, based on real-world examples and practical considerations. The goal is to equip developers with the skills and knowledge to create more flexible and future-proof web applications. We'll explore the importance of maintaining autonomy in a rapidly changing tech landscape and how to make informed decisions in PHP development.
This talk is aimed at encouraging a more independent approach to using PHP frameworks, moving towards a more flexible and future-proof approach to PHP development.
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
Key Trends Shaping the Future of Infrastructure.pdfCheryl Hung
Keynote at DIGIT West Expo, Glasgow on 29 May 2024.
Cheryl Hung, ochery.com
Sr Director, Infrastructure Ecosystem, Arm.
The key trends across hardware, cloud and open-source; exploring how these areas are likely to mature and develop over the short and long-term, and then considering how organisations can position themselves to adapt and thrive.
"Impact of front-end architecture on development cost", Viktor TurskyiFwdays
I have heard many times that architecture is not important for the front-end. Also, many times I have seen how developers implement features on the front-end just following the standard rules for a framework and think that this is enough to successfully launch the project, and then the project fails. How to prevent this and what approach to choose? I have launched dozens of complex projects and during the talk we will analyze which approaches have worked for me and which have not.
Let's dive deeper into the world of ODC! Ricardo Alves (OutSystems) will join us to tell all about the new Data Fabric. After that, Sezen de Bruijn (OutSystems) will get into the details on how to best design a sturdy architecture within ODC.
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
What will you get from this session?
1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
Topics covered:
Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
2. IntroductionIntroduction
• The basic of electronic system nowadays is
semiconductor device.
• The famous and commonly use of this device
is BJTs
(Bipolar Junction Transistors).
• It can be use as amplifier and logic switches.
• BJT consists of three terminal:
collector : C
base : B
emitter : E
• Two types of BJT : pnp and npn
3. Transistor ConstructionTransistor Construction
• 3 layer semiconductor device consisting:
• 2 n- and 1 p-type layers of material npn transistor
• 2 p- and 1 n-type layers of material pnp transistor
• The term bipolar reflects the fact that holes and
electrons participate in the injection process into the
oppositely polarized material
• A single pn junction has two different types of bias:
• forward bias
• reverse bias
• Thus, a two-pn-junction device has four types of bias.
4. Position of the terminals and symbol
of BJT.
• Base is located at the middle
and more thin from the level
of collector and emitter
• The emitter and collector
terminals are made of the
same type of semiconductor
material, while the base of the
other type of material
• Base is located at the middle
and more thin from the level
of collector and emitter
• The emitter and collector
terminals are made of the
same type of semiconductor
material, while the base of the
other type of material
5. Transistor currents
-The arrow is always drawn
on the emitter
-The arrow always point
toward the n-type
-The arrow indicates the
direction of the emitter
current:
pnp:E B
npn: B E
IC=the collector current
IB= the base current
IE= the emitter current
6. • By imaging the analogy of diode, transistor can be
construct like two diodes that connetecd together.
• It can be conclude that the work of transistor is base on
work of diode.
7. Transistor OperationTransistor Operation
• The basic operation will be described using the pnp
transistor. The operation of the pnp transistor is
exactly the same if the roles played by the electron
and hole are interchanged.
• One p-n junction of a transistor is reverse-biased,
whereas the other is forward-biased.
Forward-biased junction
of a pnp transistor
Reverse-biased junction
of a pnp transistor
8. • Both biasing potentials have been applied to a pnp
transistor and resulting majority and minority carrier
flows indicated.
• Majority carriers (+) will diffuse across the forward-
biased p-n junction into the n-type material.
• A very small number of carriers (+) will through n-type
material to the base terminal. Resulting IB is typically in
order of microamperes.
• The large number of majority carriers will diffuse across
the reverse-biased junction into the p-type material
connected to the collector terminal.
9. • Majority carriers can cross the reverse-biased
junction because the injected majority carriers will
appear as minority carriers in the n-type material.
• Applying KCL to the transistor :
IE = IC + IB
• The comprises of two components – the majority
and minority carriers
IC = ICmajority + ICOminority
• ICO – IC current with emitter terminal open and is
called leakage current.
10. Common-Base ConfigurationCommon-Base Configuration
• Common-base terminology is derived from the fact that
the :
- base is common to both input and output of the
configuration.
- base is usually the terminal closest to or at
ground potential.
• All current directions will refer to conventional (hole)
flow and the arrows in all electronic symbols have a
direction defined by this convention.
• Note that the applied biasing (voltage sources) are such
as to establish current in the direction indicated for
each branch.
11.
12. • To describe the behavior of common-base amplifiers
requires two set of characteristics:
- Input or driving point characteristics.
- Output or collector characteristics
• The output characteristics has 3 basic regions:
- Active region –defined by the biasing arrangements
- Cutoff region – region where the collector current is 0A
- Saturation region- region of the characteristics to the left
of VCB = 0V
13.
14. • The curves (output characteristics) clearly indicate
that a first approximation to the relationship between
IE and IC in the active region is given by
IC ≈IE
• Once a transistor is in the ‘on’ state, the base-emitter
voltage will be assumed to be
VBE = 0.7V
15. • In the dc mode the level of IC and IE due to the
majority carriers are related by a quantity called
alpha
α=
IC = αIE + ICBO
• It can then be summarize to IC = αIE (ignore ICBO due
to small value)
• For ac situations where the point of operation moves
on the characteristics curve, an ac alpha defined by
• Alpha a common base current gain factorcommon base current gain factor that shows
the efficiency by calculating the current percent from
current flow from emitter to collector.The value of α is
typical from 0.9 ~ 0.998.
E
C
I
I
E
C
I
I
∆
∆
=α
19. Common-Emitter ConfigurationCommon-Emitter Configuration
• It is called common-emitter configuration since :
- emitter is common or reference to both input and
output terminals.
- emitter is usually the terminal closest to or at
ground
potential.
• Almost amplifier design is using connection of CE duedue
to the high gain for current and voltageto the high gain for current and voltage.
• Two set of characteristics are necessary to describe
the behavior for CE ;input (base terminal) and output
(collector terminal) parameters.
21. Input characteristics for a
common-emitter NPN transistorcommon-emitter NPN transistor
• IB is microamperes compared
to miliamperes of IC.
• IB will flow when VBE > 0.7V
for silicon and 0.3V for
germanium
• Before this value IB is very
small and no IB.
• Base-emitter junction is
forward bias
• Increasing VCE will reduce IB
for different values.
22. Output characteristics for a
common-emitter npn
transistor
• For small VCE (VCE < VCESAT, IC increase linearly with increasing of
VCE
• VCE > VCESAT IC not totally depends on VCE constant IC
• IB(uA) is very small compare to IC (mA). Small increase in IB
cause big increase in IC
• IB=0 A ICEO occur.
• Noticing the value when IC=0A. There is still some value of
23.
24. Beta (β) or amplification factoramplification factor
• The ratio of dc collector current (IC) to the dc base
current (IB) is dc beta (βdc ) which is dc current gain
where IC and IB are determined at a particular operating
point, Q-point (quiescent point).
• It’s define by the following equation:
30 < βdc < 300 2N3904
• On data sheet, ββdcdc==hhFEFE with hh is derived from ac hybrid
equivalent cct. FE are derived from forward-current
amplification and common-emitter configuration
respectively.
25. • For ac conditions an ac beta has been defined as the
changes of collector current (IC) compared to the
changes of base current (IB) where IC and IB are
determined at operating point.
• On data sheet, βac=hfe
• It can defined by the following equation:
30. Common – Collector ConfigurationCommon – Collector Configuration
• Also called emitter-follower (EF).
• It is called common-emitter configuration since both the
signal source and the load share the collector terminal
as a common connection point.
• The output voltage is obtained at emitter terminal.
• The input characteristic of common-collector
configuration is similar with common-emitter.
configuration.
• Common-collector circuit configuration is provided with
the load resistor connected from emitter to ground.
• It is used primarily for impedance-matching purpose
since it has high input impedance and low output
impedance.
31. Notation and symbols used with the common-collector configuration:
(a) pnp transistor ; (b) npn transistor.
32. • For the common-collector configuration, the output
characteristics are a plot of IE vs VCE for a range of values of IB.
33. Limits of OperationLimits of Operation
• Many BJT transistor used as an amplifier. Thus it is
important to notice the limits of operations.
• At least 3 maximum values is mentioned in data sheet.
• There are:
a) Maximum power dissipation at collector: PCmax
or PD
b) Maximum collector-emitter voltage: VCEmax
sometimes named as VBR(CEO) or VCEO.
c) Maximum collector current: ICmax
• There are few rules that need to be followed for BJT
transistor used as an amplifier. The rules are:
i) transistor need to be operate in active region!
ii) IC < ICmax
ii) PC < PCmax
34. Note: VCE is at maximum and IC is at minimum (ICmax=ICEO) in the
cutoff region. IC is at maximum and VCE is at minimum
(VCE max = VCEsat = VCEO) in the saturation region. The transistor
operates in the active region between saturation and cutoff.
35. Refer to the fig.
Step1:
The maximum collector
power dissipation,
PD=ICmax x VCEmax (1)
= 18m x 20 = 360 mW
Step 2:
At any point on the
characteristics the product of
and must be equal to 360 mW.
Ex. 1. If choose ICmax= 5 mA,
subtitute into the (1), we get
VCEmaxICmax= 360 mW
VCEmax(5 m)=360/5=7.2 V
Ex.2. If choose VCEmax=18 V,
subtitute into (1), we get
VCEmaxICmax= 360 mW
(10) ICmax=360m/18=20 mA
36. Derating PDerating PDmaxDmax
• PDmax is usually specified at 25°C.
• The higher temperature goes, the less is PDmax
• Example;
• A derating factor of 2mW/°C indicates the power
dissipation is reduced 2mW each degree centigrade
increase of temperature.
37. ExampleExample
Transistor 2N3904 used in the circuit with
VCE=20 V. This circuit used at temperature
1250
C. Calculate the new maximum IC.
Transistor 2N3904 have maximum power
dissipation is 625 mW. Derating factor is
5mW/0C.
38. SolutionSolution
• Step 1:
Temperature increase : 1250C
– 250
C = 1000
C
• Step 2:
Derate transistor : 5 mW/0
C x 1000
C = 500 mW
• Step 3:
Maximum power dissipation at 1250
C = 625 mW–500
mW=125 mW.
• Step 4:
Thus ICmax = PCmax / VCE=125m/20 = 6.25 mA.
• Step 5:
Draw the new line of power dissipation at 1250
C .
39. ExampleExample
The parameters of transistor 2N3055 as follows:
- Maximum power dissipation @ 250C=115 W
- Derate factor=0.66 mW/0
C.
This transistor used at temperature 780
C.
Find the new maximum value of power dissipation.
Find the set of new maximum of IC if VCE=10V,
20V and 40 V.
40. SolutionSolution
• Step 1:
Temperature increase : 780
C – 250
C = 530
C
• Step 2:
Derate transistor : 0.66mW/0
C x 530
C = 35 mW
• Step 3:
Maximum power dissipation at 780
C = 115W– 35W=80
mW.
• Step 4:
ICmax = PCmax / VCE=80m/10 = 8 mA (point C)
ICmax = PCmax / VCE=80m/20 = 4 mA. (point B)
ICmax = PCmax / VCE=80m/40 = 2 mA (point A)