The FinFET is a type of transistor that uses a fin-shaped silicon body placed vertically on the substrate. FinFETs were introduced at the 22nm node to address issues with planar MOSFETs such as short channel effects and high leakage currents at small sizes. FinFETs provide better control of the channel with their gate wrapped around the fin on three sides. Subsequent improvements involved increasing the fin height to boost drive current within the same footprint area. While more difficult to fabricate than planar MOSFETs, FinFETs allow continued transistor scaling and higher performance.
Review of Fin FET Technology and Circuit Design ChallengesIJERA Editor
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control
FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the
existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This
permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,
better performance with bias voltage scaling and good matching due to low doping concentration in the channel.
There are, still, several challenges and limitations that FinFET technology has to face to be competitive with
other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as
device parasitic, performance and patterning approaches will be discussed.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Review of Fin FET Technology and Circuit Design ChallengesIJERA Editor
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control
FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the
existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This
permits to lengthening the gate scaling beyond the planar transistor limits, sustaining a steep subthreshold slope,
better performance with bias voltage scaling and good matching due to low doping concentration in the channel.
There are, still, several challenges and limitations that FinFET technology has to face to be competitive with
other technology options: Fin shape, pitch, isolation, doping, crystallographic orientation and stressing as well as
device parasitic, performance and patterning approaches will be discussed.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet TechnologyIJERA Editor
For the improvement of performance and noise tolerance in dynamic logic circuits, a technique is
proposed in this paper. A two-input AND gate is designed and simulated in 32nm technology using FinFET
device. Simulation results indicate that the proposed technique provides improvement in noise tolerance of
about three times and the use of FinFET device reduces the power consumption over the conventional MOSFET
designs.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Impact of parameter variations and optimization on dg pnin tunnel fetVLSICS Design
The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive
devices for low power applications because of their low off-current and potential for smaller sub threshold
slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel
field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel
doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized
as performance boosters to give better current characteristics parameters. After optimization with all these
performance boosters, the device has shown improved performance with increased on-current and reduced
threshold voltage and the Ion/Ioff ratio is > 106.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the
growing semiconductor industry. The need to procure low power dissipation, high operating speed and
small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down
comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the
device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use
of SED based devices prove to be a better solution to device downsizing has been presented. As such the
study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study
of the properties of several Quantum dot materials and how to choose the best material depending on the
observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron
transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of
electrons with the help of a quantum wire has been presented.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the
growing semiconductor industry. The need to procure low power dissipation, high operating speed and
small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down
comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the
device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use
of SED based devices prove to be a better solution to device downsizing has been presented. As such the
study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study
of the properties of several Quantum dot materials and how to choose the best material depending on the
observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron
transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of
electrons with the help of a quantum wire has been presented.
A Noise Tolerant and Low Power Dynamic Logic Circuit Using Finfet TechnologyIJERA Editor
For the improvement of performance and noise tolerance in dynamic logic circuits, a technique is
proposed in this paper. A two-input AND gate is designed and simulated in 32nm technology using FinFET
device. Simulation results indicate that the proposed technique provides improvement in noise tolerance of
about three times and the use of FinFET device reduces the power consumption over the conventional MOSFET
designs.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Impact of parameter variations and optimization on dg pnin tunnel fetVLSICS Design
The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive
devices for low power applications because of their low off-current and potential for smaller sub threshold
slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel
field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel
doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized
as performance boosters to give better current characteristics parameters. After optimization with all these
performance boosters, the device has shown improved performance with increased on-current and reduced
threshold voltage and the Ion/Ioff ratio is > 106.
Analysis of FinFET based Low Power SRAM Cellijsrd.com
As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an alternative solution to the bulk devices. FinFET is suitable for Nano scale memory circuits design due to its reduced Short Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. The paper focuses on study of various design aspects of FinFET based SRAM.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the
growing semiconductor industry. The need to procure low power dissipation, high operating speed and
small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down
comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the
device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use
of SED based devices prove to be a better solution to device downsizing has been presented. As such the
study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study
of the properties of several Quantum dot materials and how to choose the best material depending on the
observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron
transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of
electrons with the help of a quantum wire has been presented.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the
growing semiconductor industry. The need to procure low power dissipation, high operating speed and
small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down
comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the
device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use
of SED based devices prove to be a better solution to device downsizing has been presented. As such the
study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study
of the properties of several Quantum dot materials and how to choose the best material depending on the
observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron
transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of
electrons with the help of a quantum wire has been presented.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
1. FinFET Evolution
The foundation of modern electronics is the CMOS transistor. In the last 17 years, CMOS technology has made significant steps in terms
of the materials used in manufacture and architecture.
The first great leap was the introduction of strain engineering at the 90 nm technology node. Subsequent steps were the metal gate with
a high-k dielectric at 45 nm, and the FinFET architecture at the 22 nm node.
The year 2012 marked the birth of the first commercial 22nm FinFET. Subsequent improvements to the FinFET architecture allowed for
improved performance and reduced area. The 3D nature of the FinFET has many advantages, like increasing the fin height to get a
higher drive current at the same footprint.
Figure 2 shows the evolution of MOSFET structures: double-gate, tri-gate, pi-gate, omega-gate, and gate-all-around. Double-gate and
tri-gate FinFETs are common due to their simple structure and ease of fabrication.
Although the GAA device was proposed before the FinFET, the latter was more comfortable for executing production.
2. What is a FinFET?
A FinFET is a transistor. Being a transistor, it is an amplifier and a switch. Its applications include
home computers, laptops, tablets, smartphones, wearables, high-end networks, automotive, and
more.
FinFET stands for a fin-shaped field-effect transistor. Fin because it has a fin-shaped body –
the silicon fin that forms the transistor’s main body distinguishes it. Field-effect because an
electric field controls the conductivity of the material.
A FinFET is a non-planar device, i.e., not constrained to a single plane. It is also called 3D for having a
third dimension.
3. Choosing FinFET devices instead of traditional MOSFETs happens for a variety of reasons. Increasing
computational power implies increasing computational density. More transistors are required to achieve this,
which leads to larger chips. However, for practical reasons, it is crucial to keep the area about the same.
As previously stated, one way of achieving more computational power is by shrinking the transistor’s size.
But as the transistor’s dimensions decrease, the proximity between the drain and the source lessens the gate
electrode’s ability to control the flow of current in the channel region. Because of this, planar MOSFETs
display objectionable short-channel effects.
Shrinking the gate length (Lg) below 90 nm produces a significant leakage current, and below 28 nm, the
leakage is excessive, rendering the transistor useless. So, as the gate length is scaled down, suppressing
the off‐state leakage is vital.
Another way to increase computational power is by changing the materials used for manufacturing the chips,
but it may not be suitable from an economic standpoint.
Why Use FinFET Devices in Place of MOSFETs?
4. Computing FinFET Transistor Width (W)
The channel (fin) of the FinFET is vertical. This device requires keeping in mind specific dimensions.
Evoking Max Planck’s “quanta,” the FinFET exhibits a property known as width quantization: its width is a
multiple of its height. Random widths are not possible.
The fin thickness is a crucial parameter because it controls the short-channel behavior and the device’s
subthreshold swing. The subthreshold swing measures the efficiency of a transistor. It is the variation in
gate voltage that increases the drain current one order of magnitude.
5. ● Lg = gate length
● T = fin thickness
● Hfin = fin height
● W = transistor width (single
fin)
● Weff = effective transistor
width (multiple fins)
For double-gate: W = 2 ∙ Hfin
For tri-gate: W = 2 ∙ Hfin + T
Multiple fins will increase the
transistor width.
Weff = n ∙ W
Where n = number of fins
6. FinFET Advantages
● Better control over the channel
● Suppressed short-channel effects
● Lower static leakage current
● Faster switching speed
● Higher drain current (More drive-
current per footprint)
● Lower switching voltage
● Low power consumption FinFET Disadvantages
● Difficult to control dynamic Vth
● Quantized device-width. It is
impossible to make fractions of the
fins, whereby designers can only
specify the devices’ dimensions in
multiples of whole fins.
● Higher parasitics due to 3-D profile
● Very high capacitances
● Corner effect: electric field at the
corner is always amplified compared
to the electric field at the sidewall.
This can be minimized using a nitrate
layer in corners.
● High fabrication cost