SlideShare a Scribd company logo
1 of 10
KWAME NKRUMAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
KUMASI
FACULTY OF PHYSICAL SCIENCES
COMPUTER SCIENCE DEPARTMENT
CSM553 SOFTWARE DESIGN & ARCHITECTURE
“Using Moore’s Law to Research into Tri-gate Transistor and Silicon Nanotechnology to
Predict Future of Systems.”
BY
(GROUP B)
Naavro Robb Wewiase Sapio (PG5141920)
Ebenezer Eghan (PG5143320)
Maame Esi Aidoo (PG5144220)
Kwasi Antwi Danso (PG5144020)
Ruth Ama Mansa Larbey (PG5144720)
THIS ASSIGNMENT IS SUBMITTED IN PARTIAL FULLFILMENT OF THE
REQUIREMENTS OF CSM553 – SOFTWARE DESIGN AND ARCHITECTURE
LECTURER
DR ASAMOAH
MARCH 02, 2021
Content Page
1.0 Introduction ..................................................................................................................3
2.0 What is a Transistor and Its Function?..........................................................................3
3.0 The Structure of Transistors…………………………………………...………….......3
3.1 Advantages of Transistors……………………………………..……...…....................4
4.0 Nanotechnology………………………………………………………………………4
5.0 Why the reinvention of transistors - Tri-gate (3D) transistors…………….………….4
5.1 What is Tri-gate?…………………………………………………………………......5
5.2 The Need for Tri-gate Transistors……………………………………………………6
5.3 Characteristics of Tri-gate Transistors……………………………………………….7
6.0 What Is Moore's Law?……………………………………………………………….7
6.1 Is Moore’s Law Sustainable ………………………………………………………...8
7.0 Graphene Likely to Replace Silicon …………………………………..…………….8
8.0 CONCLUSION ……………………………………………………………………..9
REFERENCE ………………………………………………………………………………10
1.0 Introduction
In 1965, George Moore suggested that roughly every two years, the number of transistors on
microchips will double. Commonly referred to as Moore’s Law, this phenomenon suggests that
computational progress will become considerably faster, smaller, and more efficient over time.
Widely regarded as one of the hallmark theories of the 21st century, Moore’s Law carries
significant implications for the future of technological progress accompanied by its possible
limitations (C. Tardi 2021).
2.0 What is a transistor and its function?
Transistors are electronic components found in digital systems and devices which mainly
serves as signal switches and/or amplifiers. Transistors were invented to replace vacuum tubes
in the second generation of computers. Transistors are semi-conductor based (i.e. germanium
and gold were initially used but presently germanium and silicon are used due to its temperature
resistance). The invention of transistors saw a major boost since they were of smaller size,
reduced voltage consumption which eventually reduced heat produced.
3.0 The structure of a transistor
Transistors consist of three layers of semi-conductors (i.e. two junctions with one output) as
shown in the figure below
3.1 Advantages of transistors in digital systems
1. Reduced sizes
2. Less voltage consumption
3. Relatively less heat is generated
4.0 Nanotechnology
With mobile device becoming smaller and lighter and the growing users’ requirements, the
evolution of advanced logic technology node have ranged from 22 nm in the year 2012 and
target for 2013 was be 14 nm (2). With feature sizes below 100 nm, silicon technology has
entered the realm of nanotechnology and this will yield to the increasing number of transistors
in devices and this in effect will directly influence the size and weight of these devices in which
they are embedded.
5.0 Why The Reinvention of Transistors –Tri-gate (3D) Transistors
2D planar transistors having been the evolutionary driving force of electronic devices, lead the
significant reduction in device sizes, increase performance, lesser heat generation still pose the
problem of current leakage. The 2D transistors have been in existence and being used for half
a century. The figure 5.1 below shows a 32nm transistors with the source, drain and channel
(the latter covered by the gate) all in the same plane.
Figure 5.1 2D planar transistor
With the Tri-Gate transistor as compared to the traditional 'flat' two-dimensional planar, the
gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically
from the silicon substrate as shown in the figure 5.2 below. This design ensures control of
current is accomplished by implementing a gate on each of the three sides of the fin – two on
each side and one across the top. The design also vertically placing the fins which in effect
allows more transistors to be packed closer together for increase performance.
This design promises a "dramatic performance gain at low operating voltage" with reduced
current leakage. This according to Intel, translates to a 37 per cent performance increase at low
voltage versus Intel's 32nm planar transistors and under a 50 per cent power reduction with
constant performance. Basically, the new transistors consume less than half the power when at
the same performance as 2D planar transistors on 32nm chips.
Better control over the transistor gate enables as much transistor current flowing as possible
when the transistor is in the 'on' state for performance, and as close to zero as possible when it
is in the 'off' state to reduce power. The new transistors will also have better ability to be turned
on and off to save power when they're not needed.
5.1 What Is Tri-Gate?
The Tri-Gate transistor is a 3D transistor first invented by Intel research scientists in 2002. The
Tri-Gate transistor is so named as the gate has three sides. The traditional 'flat' two-dimensional
planar gate is replaced with an incredibly thin three-dimensional silicon fin that rises up
vertically from the silicon substrate.
Control of current is accomplished by implementing a gate on each of the three sides of the fin
– two on each side and one across the top - rather than just one on top, as is the case with the
2D planar transistor. And since these fins are vertical, transistors can be packed closer together.
The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain
channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar
design. In addition, multiple fins are used, which provide greater control of each state.
5.2 The Need for Tri-Gate Transistors
Intel co-founder Gordon Moore in 1965 stated that the number of transistors in a given area
would double every two years, with increased functionality and reduced cost. For this to be a
continuous reality, Intel says its scientists have long recognised the benefits of a 3D structure
for sustaining the pace of Moore's Law as device dimensions become so small that physical
laws become barriers to advancement.
"For years we have seen limits to how small transistors can get," said Moore of Intel's latest
innovation. "This change in the basic structure is a truly revolutionary approach, and one that
should allow Moore's Law, and the historic pace of innovation, to continue." (3)
Intel says there's a "dramatic performance gain at low operating voltage" (3) measured it at 37
percent performance increase at low voltage. Basically, the new transistors consume less than
half the power when at the same performance as 2D planar transistors on 32nm chips.
5.3 CHARACTERISTICS OF TRI-GATE TRANSISTORS
 Reduction in power dissipation
 Increased pathway for electrical signals
 Drives 20% more current than traditional planar transistors
 High switching speed
 High performance with reduced size
 Better control over leakage current due to 3D structure
 Dramatic performance gains at low operating voltage, better than bulk PDSOI, FDSOI
 37% performance increase at low voltage
 50% power reduction at constant performance
 Improved switching characteristics
 Higher drive current for a given transistor
 Only 2-3% cost adder
6.0 What Is Moore's Law?
Moore's Law refers to Moore's perception that the number of transistors on a microchip doubles
every two years, though the cost of computers is halved. Moore's Law states that we can expect
the speed and capability of our computers to increase every couple of years, and we will pay
less for them.
Gordon Moore did not call his observation "Moore's Law," nor did he set out to create a "law."
Moore made that statement based on noticing emerging trends in chip manufacturing at Intel.
Eventually, Moore's insight became a prediction, which in turn became the golden rule known
as Moore's Law.
6.1 Is Moore's Law Sustainable?
Experts agree that computers should reach the physical limits of Moore's Law at some point in
the 2020s. The high temperatures of transistors eventually would make it impossible to create
smaller circuits. This is because cooling down the transistors takes more energy than the
amount of energy that already passes through the transistors. In a 2007 interview, Moore
himself admitted that "...the fact that materials are made of atoms is the fundamental limitation
and it's not that far away...We're pushing up against some fairly fundamental limits so one of
these days we're going to have to stop making things smaller."
7.0 Graphene Likely to Replace Silicon
Experts say to keep on producing lighter and more compact devices much research need to go
into getting alternative to silicon. The emerging element which is gaining attention is graphene
and that is due to the following properties it exhibits.
a. First ever 2D Crystalline material
b. Thinnest possible material
c. High mobility & conductivity at room temperature
d. Exhibits pronounced response to perpendicular electric fields
e. Low cost Higher Switching speed & less leakage current
It is projected that shrinkage of graphene processors will last around 2030 giving birth to a new
era of Quantum Computing.
8.0 CONCLUSION
Almost every facet of a high-tech society benefits from Moore's Law in action. Mobile devices,
such as smartphones and computer tablets would not work without tiny processors; neither
would video games, spreadsheets, accurate weather forecasts, and global positioning systems
(GPS). Furthermore, smaller and faster computers, advance transportation, health care,
education, and energy production and many other industries have progressed because of the
increased power of computer chips.
The vision of an endlessly empowered and interconnected future brings both challenges and
benefits. Shrinking transistors have powered advances in computing for more than half a
century, but soon engineers and scientists must find other ways to make computers more
capable. Instead of physical processes, applications and software may help improve the speed
and efficiency of computers.
Cloud computing, wireless communication, the Internet of Things (IoT), and quantum physics
all may play a role in the future of computer tech innovation. Despite the growing concerns
around privacy and security, the advantages of ever-smarter computing technology can help
keep us healthier, safer, and more productive in the long run.
Reference
1. Carla Tardi, Moore’s Law (2021, February 24). Retrieved March 07, 2021 from
https://www.investopedia.com/terms/m/mooreslaw.asp
2. Jerry Wu, Yin-Lin Shen, Kitt Reinhardt, Harold Szu, Boqun Dong, A Nanotechnology
Enhancement to Moore’s Law
3. Intel Corporation. (2011, May 5). Transistors reinvented using new 3-D structure.
ScienceDaily. Retrieved March 1, 2021 from
www.sciencedaily.com/releases/2011/05/110505092252.htm

More Related Content

What's hot

Two-Layer Crystal Square for Transistors on a Single Chip
Two-Layer Crystal Square for Transistors on a Single ChipTwo-Layer Crystal Square for Transistors on a Single Chip
Two-Layer Crystal Square for Transistors on a Single Chipcsandit
 
3D IC TECHNOLOGY
3D IC TECHNOLOGY3D IC TECHNOLOGY
3D IC TECHNOLOGYVinil Patel
 
3D IC Technology
3D IC Technology3D IC Technology
3D IC TechnologyAnupama K
 
Extremely Low Power FIR Filter for a Smart Dust Sensor Module
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleExtremely Low Power FIR Filter for a Smart Dust Sensor Module
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleCSCJournals
 
Integrated Circuit (IC TECHNOLOGY)
Integrated Circuit (IC TECHNOLOGY) Integrated Circuit (IC TECHNOLOGY)
Integrated Circuit (IC TECHNOLOGY) SutharSha
 
Characterization of silicon nanowire transistor
Characterization of silicon nanowire transistorCharacterization of silicon nanowire transistor
Characterization of silicon nanowire transistorTELKOMNIKA JOURNAL
 
Introduction To Microelectronics
Introduction To MicroelectronicsIntroduction To Microelectronics
Introduction To MicroelectronicsAnkita Jaiswal
 
Analysis Increasing Network Signal of Dongle
Analysis Increasing Network Signal of DongleAnalysis Increasing Network Signal of Dongle
Analysis Increasing Network Signal of Dongleijsrd.com
 
Three dimensional integrated circuit
Three dimensional integrated circuitThree dimensional integrated circuit
Three dimensional integrated circuitArqam Mirza
 

What's hot (20)

Two-Layer Crystal Square for Transistors on a Single Chip
Two-Layer Crystal Square for Transistors on a Single ChipTwo-Layer Crystal Square for Transistors on a Single Chip
Two-Layer Crystal Square for Transistors on a Single Chip
 
3d ic's ppt..
3d ic's ppt..3d ic's ppt..
3d ic's ppt..
 
3D IC TECHNOLOGY
3D IC TECHNOLOGY3D IC TECHNOLOGY
3D IC TECHNOLOGY
 
3D IC Technology
3D IC Technology3D IC Technology
3D IC Technology
 
Extremely Low Power FIR Filter for a Smart Dust Sensor Module
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleExtremely Low Power FIR Filter for a Smart Dust Sensor Module
Extremely Low Power FIR Filter for a Smart Dust Sensor Module
 
Integrated Circuit (IC TECHNOLOGY)
Integrated Circuit (IC TECHNOLOGY) Integrated Circuit (IC TECHNOLOGY)
Integrated Circuit (IC TECHNOLOGY)
 
3D ic the new edge of electronics
3D ic the new edge of electronics3D ic the new edge of electronics
3D ic the new edge of electronics
 
3 d
3 d3 d
3 d
 
Nano electronics Technology and its Application
Nano electronics Technology and its ApplicationNano electronics Technology and its Application
Nano electronics Technology and its Application
 
3 d ic
3 d ic3 d ic
3 d ic
 
3 d
3 d3 d
3 d
 
3D ICs
3D ICs3D ICs
3D ICs
 
Nanotechnology
NanotechnologyNanotechnology
Nanotechnology
 
3D INTEGRATED CIRCUITS
3D INTEGRATED CIRCUITS3D INTEGRATED CIRCUITS
3D INTEGRATED CIRCUITS
 
Lf3420252035
Lf3420252035Lf3420252035
Lf3420252035
 
Characterization of silicon nanowire transistor
Characterization of silicon nanowire transistorCharacterization of silicon nanowire transistor
Characterization of silicon nanowire transistor
 
Introduction To Microelectronics
Introduction To MicroelectronicsIntroduction To Microelectronics
Introduction To Microelectronics
 
Analysis Increasing Network Signal of Dongle
Analysis Increasing Network Signal of DongleAnalysis Increasing Network Signal of Dongle
Analysis Increasing Network Signal of Dongle
 
Three dimensional integrated circuit
Three dimensional integrated circuitThree dimensional integrated circuit
Three dimensional integrated circuit
 
W04406104107
W04406104107W04406104107
W04406104107
 

Similar to Sd group b_assignment 2

22nm tri-gate technology
22nm tri-gate technology22nm tri-gate technology
22nm tri-gate technologyArjun Challu
 
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORREVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
 
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORREVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
 
CMOS VLSI design
CMOS VLSI designCMOS VLSI design
CMOS VLSI designRajan Kumar
 
3D or Tri-gate transistors
3D or Tri-gate transistors3D or Tri-gate transistors
3D or Tri-gate transistorsKaranvir Singh
 
Miniturization of CMOS devices
Miniturization of CMOS devicesMiniturization of CMOS devices
Miniturization of CMOS devicesSamuel Lewis
 
40508214-tri-gate-transistors.pptx
40508214-tri-gate-transistors.pptx40508214-tri-gate-transistors.pptx
40508214-tri-gate-transistors.pptxJagadeeshKumarS4
 
dokumen.tips_3d-ic-seminar-ppt.ppt
dokumen.tips_3d-ic-seminar-ppt.pptdokumen.tips_3d-ic-seminar-ppt.ppt
dokumen.tips_3d-ic-seminar-ppt.pptYogeshAM4
 
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...IJERD Editor
 
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationDual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
 
Structural and Electrical Analysis of Various MOSFET Designs
Structural and Electrical Analysis of Various MOSFET DesignsStructural and Electrical Analysis of Various MOSFET Designs
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
 
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthInvestigation and design of ion-implanted MOSFET based on (18 nm) channel length
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
 
Green droid ieee-micro
Green droid ieee-microGreen droid ieee-micro
Green droid ieee-microRAJENDRA469
 

Similar to Sd group b_assignment 2 (20)

tri gate transistors
tri gate transistorstri gate transistors
tri gate transistors
 
22nm tri-gate technology
22nm tri-gate technology22nm tri-gate technology
22nm tri-gate technology
 
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORREVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
 
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORREVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTOR
 
CMOS VLSI design
CMOS VLSI designCMOS VLSI design
CMOS VLSI design
 
3D or Tri-gate transistors
3D or Tri-gate transistors3D or Tri-gate transistors
3D or Tri-gate transistors
 
CA_2_BC113036
CA_2_BC113036CA_2_BC113036
CA_2_BC113036
 
22 nano meter technology
22 nano meter technology22 nano meter technology
22 nano meter technology
 
3d transistor
3d transistor3d transistor
3d transistor
 
Miniturization of CMOS devices
Miniturization of CMOS devicesMiniturization of CMOS devices
Miniturization of CMOS devices
 
14A81A05B2
14A81A05B214A81A05B2
14A81A05B2
 
Vlsi
VlsiVlsi
Vlsi
 
Bl34395398
Bl34395398Bl34395398
Bl34395398
 
40508214-tri-gate-transistors.pptx
40508214-tri-gate-transistors.pptx40508214-tri-gate-transistors.pptx
40508214-tri-gate-transistors.pptx
 
dokumen.tips_3d-ic-seminar-ppt.ppt
dokumen.tips_3d-ic-seminar-ppt.pptdokumen.tips_3d-ic-seminar-ppt.ppt
dokumen.tips_3d-ic-seminar-ppt.ppt
 
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...
IJERD (www.ijerd.com) International Journal of Engineering Research and Devel...
 
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationDual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
 
Structural and Electrical Analysis of Various MOSFET Designs
Structural and Electrical Analysis of Various MOSFET DesignsStructural and Electrical Analysis of Various MOSFET Designs
Structural and Electrical Analysis of Various MOSFET Designs
 
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthInvestigation and design of ion-implanted MOSFET based on (18 nm) channel length
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length
 
Green droid ieee-micro
Green droid ieee-microGreen droid ieee-micro
Green droid ieee-micro
 

Recently uploaded

Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...
Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...
Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...amitlee9823
 
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)amitlee9823
 
Motilal Oswal Gift City Fund PPT - Apr 2024.pptx
Motilal Oswal Gift City Fund PPT - Apr 2024.pptxMotilal Oswal Gift City Fund PPT - Apr 2024.pptx
Motilal Oswal Gift City Fund PPT - Apr 2024.pptxMaulikVasani1
 
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual service
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual serviceCALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual service
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual serviceanilsa9823
 
Personal Brand Exploration - Fernando Negron
Personal Brand Exploration - Fernando NegronPersonal Brand Exploration - Fernando Negron
Personal Brand Exploration - Fernando Negronnegronf24
 
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...ranjana rawat
 
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...robinsonayot
 
Internship Report].pdf iiwmoosmsosmshkssmk
Internship Report].pdf iiwmoosmsosmshkssmkInternship Report].pdf iiwmoosmsosmshkssmk
Internship Report].pdf iiwmoosmsosmshkssmkSujalTamhane
 
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...rightmanforbloodline
 
OSU毕业证留学文凭,制做办理
OSU毕业证留学文凭,制做办理OSU毕业证留学文凭,制做办理
OSU毕业证留学文凭,制做办理cowagem
 
CFO_SB_Career History_Multi Sector Experience
CFO_SB_Career History_Multi Sector ExperienceCFO_SB_Career History_Multi Sector Experience
CFO_SB_Career History_Multi Sector ExperienceSanjay Bokadia
 
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service 🧳
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service  🧳CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service  🧳
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service 🧳anilsa9823
 
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...poojakaurpk09
 
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Booking
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance BookingCall Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Booking
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Bookingroncy bisnoi
 
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangalore
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service BangaloreCall Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangalore
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangaloreamitlee9823
 
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...Pooja Nehwal
 
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boody
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big BoodyDubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boody
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boodykojalkojal131
 
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...amitlee9823
 
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Stand
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night StandHot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Stand
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Standkumarajju5765
 

Recently uploaded (20)

Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...
Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...
Call Girls Btm Layout Just Call 👗 7737669865 👗 Top Class Call Girl Service Ba...
 
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)
Call Girls Bidadi ☎ 7737669865☎ Book Your One night Stand (Bangalore)
 
Motilal Oswal Gift City Fund PPT - Apr 2024.pptx
Motilal Oswal Gift City Fund PPT - Apr 2024.pptxMotilal Oswal Gift City Fund PPT - Apr 2024.pptx
Motilal Oswal Gift City Fund PPT - Apr 2024.pptx
 
VVVIP Call Girls In East Of Kailash ➡️ Delhi ➡️ 9999965857 🚀 No Advance 24HRS...
VVVIP Call Girls In East Of Kailash ➡️ Delhi ➡️ 9999965857 🚀 No Advance 24HRS...VVVIP Call Girls In East Of Kailash ➡️ Delhi ➡️ 9999965857 🚀 No Advance 24HRS...
VVVIP Call Girls In East Of Kailash ➡️ Delhi ➡️ 9999965857 🚀 No Advance 24HRS...
 
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual service
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual serviceCALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual service
CALL ON ➥8923113531 🔝Call Girls Gosainganj Lucknow best sexual service
 
Personal Brand Exploration - Fernando Negron
Personal Brand Exploration - Fernando NegronPersonal Brand Exploration - Fernando Negron
Personal Brand Exploration - Fernando Negron
 
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...
Book Paid Saswad Call Girls Pune 8250192130Low Budget Full Independent High P...
 
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...
TEST BANK For Evidence-Based Practice for Nurses Appraisal and Application of...
 
Internship Report].pdf iiwmoosmsosmshkssmk
Internship Report].pdf iiwmoosmsosmshkssmkInternship Report].pdf iiwmoosmsosmshkssmk
Internship Report].pdf iiwmoosmsosmshkssmk
 
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...
TEST BANK For An Introduction to Brain and Behavior, 7th Edition by Bryan Kol...
 
OSU毕业证留学文凭,制做办理
OSU毕业证留学文凭,制做办理OSU毕业证留学文凭,制做办理
OSU毕业证留学文凭,制做办理
 
CFO_SB_Career History_Multi Sector Experience
CFO_SB_Career History_Multi Sector ExperienceCFO_SB_Career History_Multi Sector Experience
CFO_SB_Career History_Multi Sector Experience
 
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service 🧳
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service  🧳CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service  🧳
CALL ON ➥8923113531 🔝Call Girls Husainganj Lucknow best Female service 🧳
 
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...
Virgin Call Girls Delhi Service-oriented sexy call girls ☞ 9899900591 ☜ Rita ...
 
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Booking
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance BookingCall Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Booking
Call Girls Alandi Road Call Me 7737669865 Budget Friendly No Advance Booking
 
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangalore
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service BangaloreCall Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangalore
Call Girls Hosur Just Call 👗 7737669865 👗 Top Class Call Girl Service Bangalore
 
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...
Dombivli Call Girls, 9892124323, Kharghar Call Girls, chembur Call Girls, Vas...
 
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boody
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big BoodyDubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boody
Dubai Call Girls Demons O525547819 Call Girls IN DUbai Natural Big Boody
 
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...
Nandini Layout Call Girls: 🍓 7737669865 🍓 High Profile Model Escorts | Bangal...
 
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Stand
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night StandHot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Stand
Hot Call Girls |Delhi |Janakpuri ☎ 9711199171 Book Your One night Stand
 

Sd group b_assignment 2

  • 1. KWAME NKRUMAH UNIVERSITY OF SCIENCE AND TECHNOLOGY KUMASI FACULTY OF PHYSICAL SCIENCES COMPUTER SCIENCE DEPARTMENT CSM553 SOFTWARE DESIGN & ARCHITECTURE “Using Moore’s Law to Research into Tri-gate Transistor and Silicon Nanotechnology to Predict Future of Systems.” BY (GROUP B) Naavro Robb Wewiase Sapio (PG5141920) Ebenezer Eghan (PG5143320) Maame Esi Aidoo (PG5144220) Kwasi Antwi Danso (PG5144020) Ruth Ama Mansa Larbey (PG5144720) THIS ASSIGNMENT IS SUBMITTED IN PARTIAL FULLFILMENT OF THE REQUIREMENTS OF CSM553 – SOFTWARE DESIGN AND ARCHITECTURE LECTURER DR ASAMOAH MARCH 02, 2021
  • 2. Content Page 1.0 Introduction ..................................................................................................................3 2.0 What is a Transistor and Its Function?..........................................................................3 3.0 The Structure of Transistors…………………………………………...………….......3 3.1 Advantages of Transistors……………………………………..……...…....................4 4.0 Nanotechnology………………………………………………………………………4 5.0 Why the reinvention of transistors - Tri-gate (3D) transistors…………….………….4 5.1 What is Tri-gate?…………………………………………………………………......5 5.2 The Need for Tri-gate Transistors……………………………………………………6 5.3 Characteristics of Tri-gate Transistors……………………………………………….7 6.0 What Is Moore's Law?……………………………………………………………….7 6.1 Is Moore’s Law Sustainable ………………………………………………………...8 7.0 Graphene Likely to Replace Silicon …………………………………..…………….8 8.0 CONCLUSION ……………………………………………………………………..9 REFERENCE ………………………………………………………………………………10
  • 3. 1.0 Introduction In 1965, George Moore suggested that roughly every two years, the number of transistors on microchips will double. Commonly referred to as Moore’s Law, this phenomenon suggests that computational progress will become considerably faster, smaller, and more efficient over time. Widely regarded as one of the hallmark theories of the 21st century, Moore’s Law carries significant implications for the future of technological progress accompanied by its possible limitations (C. Tardi 2021). 2.0 What is a transistor and its function? Transistors are electronic components found in digital systems and devices which mainly serves as signal switches and/or amplifiers. Transistors were invented to replace vacuum tubes in the second generation of computers. Transistors are semi-conductor based (i.e. germanium and gold were initially used but presently germanium and silicon are used due to its temperature resistance). The invention of transistors saw a major boost since they were of smaller size, reduced voltage consumption which eventually reduced heat produced. 3.0 The structure of a transistor Transistors consist of three layers of semi-conductors (i.e. two junctions with one output) as shown in the figure below
  • 4. 3.1 Advantages of transistors in digital systems 1. Reduced sizes 2. Less voltage consumption 3. Relatively less heat is generated 4.0 Nanotechnology With mobile device becoming smaller and lighter and the growing users’ requirements, the evolution of advanced logic technology node have ranged from 22 nm in the year 2012 and target for 2013 was be 14 nm (2). With feature sizes below 100 nm, silicon technology has entered the realm of nanotechnology and this will yield to the increasing number of transistors in devices and this in effect will directly influence the size and weight of these devices in which they are embedded. 5.0 Why The Reinvention of Transistors –Tri-gate (3D) Transistors 2D planar transistors having been the evolutionary driving force of electronic devices, lead the significant reduction in device sizes, increase performance, lesser heat generation still pose the problem of current leakage. The 2D transistors have been in existence and being used for half a century. The figure 5.1 below shows a 32nm transistors with the source, drain and channel (the latter covered by the gate) all in the same plane. Figure 5.1 2D planar transistor
  • 5. With the Tri-Gate transistor as compared to the traditional 'flat' two-dimensional planar, the gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate as shown in the figure 5.2 below. This design ensures control of current is accomplished by implementing a gate on each of the three sides of the fin – two on each side and one across the top. The design also vertically placing the fins which in effect allows more transistors to be packed closer together for increase performance. This design promises a "dramatic performance gain at low operating voltage" with reduced current leakage. This according to Intel, translates to a 37 per cent performance increase at low voltage versus Intel's 32nm planar transistors and under a 50 per cent power reduction with constant performance. Basically, the new transistors consume less than half the power when at the same performance as 2D planar transistors on 32nm chips. Better control over the transistor gate enables as much transistor current flowing as possible when the transistor is in the 'on' state for performance, and as close to zero as possible when it is in the 'off' state to reduce power. The new transistors will also have better ability to be turned on and off to save power when they're not needed. 5.1 What Is Tri-Gate? The Tri-Gate transistor is a 3D transistor first invented by Intel research scientists in 2002. The Tri-Gate transistor is so named as the gate has three sides. The traditional 'flat' two-dimensional planar gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate. Control of current is accomplished by implementing a gate on each of the three sides of the fin – two on each side and one across the top - rather than just one on top, as is the case with the 2D planar transistor. And since these fins are vertical, transistors can be packed closer together. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain
  • 6. channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar design. In addition, multiple fins are used, which provide greater control of each state.
  • 7. 5.2 The Need for Tri-Gate Transistors Intel co-founder Gordon Moore in 1965 stated that the number of transistors in a given area would double every two years, with increased functionality and reduced cost. For this to be a continuous reality, Intel says its scientists have long recognised the benefits of a 3D structure for sustaining the pace of Moore's Law as device dimensions become so small that physical laws become barriers to advancement. "For years we have seen limits to how small transistors can get," said Moore of Intel's latest innovation. "This change in the basic structure is a truly revolutionary approach, and one that should allow Moore's Law, and the historic pace of innovation, to continue." (3) Intel says there's a "dramatic performance gain at low operating voltage" (3) measured it at 37 percent performance increase at low voltage. Basically, the new transistors consume less than half the power when at the same performance as 2D planar transistors on 32nm chips. 5.3 CHARACTERISTICS OF TRI-GATE TRANSISTORS  Reduction in power dissipation  Increased pathway for electrical signals  Drives 20% more current than traditional planar transistors  High switching speed  High performance with reduced size  Better control over leakage current due to 3D structure  Dramatic performance gains at low operating voltage, better than bulk PDSOI, FDSOI  37% performance increase at low voltage  50% power reduction at constant performance  Improved switching characteristics  Higher drive current for a given transistor  Only 2-3% cost adder
  • 8. 6.0 What Is Moore's Law? Moore's Law refers to Moore's perception that the number of transistors on a microchip doubles every two years, though the cost of computers is halved. Moore's Law states that we can expect the speed and capability of our computers to increase every couple of years, and we will pay less for them. Gordon Moore did not call his observation "Moore's Law," nor did he set out to create a "law." Moore made that statement based on noticing emerging trends in chip manufacturing at Intel. Eventually, Moore's insight became a prediction, which in turn became the golden rule known as Moore's Law. 6.1 Is Moore's Law Sustainable? Experts agree that computers should reach the physical limits of Moore's Law at some point in the 2020s. The high temperatures of transistors eventually would make it impossible to create smaller circuits. This is because cooling down the transistors takes more energy than the amount of energy that already passes through the transistors. In a 2007 interview, Moore himself admitted that "...the fact that materials are made of atoms is the fundamental limitation and it's not that far away...We're pushing up against some fairly fundamental limits so one of these days we're going to have to stop making things smaller." 7.0 Graphene Likely to Replace Silicon Experts say to keep on producing lighter and more compact devices much research need to go into getting alternative to silicon. The emerging element which is gaining attention is graphene and that is due to the following properties it exhibits. a. First ever 2D Crystalline material b. Thinnest possible material
  • 9. c. High mobility & conductivity at room temperature d. Exhibits pronounced response to perpendicular electric fields e. Low cost Higher Switching speed & less leakage current It is projected that shrinkage of graphene processors will last around 2030 giving birth to a new era of Quantum Computing. 8.0 CONCLUSION Almost every facet of a high-tech society benefits from Moore's Law in action. Mobile devices, such as smartphones and computer tablets would not work without tiny processors; neither would video games, spreadsheets, accurate weather forecasts, and global positioning systems (GPS). Furthermore, smaller and faster computers, advance transportation, health care, education, and energy production and many other industries have progressed because of the increased power of computer chips. The vision of an endlessly empowered and interconnected future brings both challenges and benefits. Shrinking transistors have powered advances in computing for more than half a century, but soon engineers and scientists must find other ways to make computers more capable. Instead of physical processes, applications and software may help improve the speed and efficiency of computers. Cloud computing, wireless communication, the Internet of Things (IoT), and quantum physics all may play a role in the future of computer tech innovation. Despite the growing concerns around privacy and security, the advantages of ever-smarter computing technology can help keep us healthier, safer, and more productive in the long run.
  • 10. Reference 1. Carla Tardi, Moore’s Law (2021, February 24). Retrieved March 07, 2021 from https://www.investopedia.com/terms/m/mooreslaw.asp 2. Jerry Wu, Yin-Lin Shen, Kitt Reinhardt, Harold Szu, Boqun Dong, A Nanotechnology Enhancement to Moore’s Law 3. Intel Corporation. (2011, May 5). Transistors reinvented using new 3-D structure. ScienceDaily. Retrieved March 1, 2021 from www.sciencedaily.com/releases/2011/05/110505092252.htm