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Pulsed laser
deposition of thin
films
HASNAIN JAVED
BS HONS.
DEPARTMENT OF PHYSICS
UNIVERSITY OF GUJRAT, GUJRAT
What is thin film?
 A thin film is a layer of material ranging from fractions of
a nanometer to several micrometer (1 nm - µm) in
thickness.
Thin film is used to modify
Physical characteristics
Electrical conductivity
Chemical inertness
Chemical characteristics
decoration
Thin Film Deposition
 The act of applying thin film on a substrate.
 Transfer atoms from target to a vapour and then
deposite on a substrate
optics electricity computer magnetics Solar cells
Applications of thin films
Ways to deposit thin films
Chemical deposition
 Plating
 Chemical solution
deposition
 Spin coating
 Chemical vapor
deposition
 Atomic layer deposition
Physical deposition
 Sputtering
 Pulse laser deposition
target
substrate
Evaporation
target
substrate
Chemical
vapor
deposition
Ar+
substrate
gas
Sputtering
Target:! (metals, semiconductors…)
Laser: (UV, 10 ns)
Vacuum: Atmospheres to ultrahigh
vacuum or inert gas
Pulsed Laser Deposition
With the pulsed laser deposition (PLD) method, thin films are prepared
by the ablation of one or more targets illuminated by a focused pulsed-
laser beam.
Gas and ultra high vacume
Ultra high vacume
 In vacuum, the plume
does not expand
unidirectionally
 The ejected species
diffuse in the plume and
collide with each other,
which leads to a rapid
thermalization of the
particle cloud.
Gas
 Ambient gas scatters and
attenuates the plume
 changing its spatial
distribution
 the deposition rate
 kinetic energy distribution
of the different species.
Process in PLD
 The removal of atoms from the bulk
material is done by vaporization of
the bulk at the surface region in a
state of non-equilibrium.
 Thus transferring some of their
energy to the lattice of the target.The
surface of the target is then heated up
and vaporized.
Creation of plasma
e-
e-
e-
e-
e-
e-
e-
solid
Cont…
Melting (tens of ns), Evaporation, Plasma
Formation (microseconds), Resolidification
Dynamic of the plasma
 Material expands in a plasma parallel to the normal vector
of the target surface towards the substrate.
 The spatial distribution of the plume is dependent on the
background pressure inside the PLD chamber.
The dependency of the plume shape on the pressure can be
described by
 The vacuum stage, where the plume is very narrow and
forward directed;
 The intermediate region where a splitting of the high and
less energetic species can be observed
Deposition of the ablation material
 The high energetic species ablated from the target are bombarding
the substrate surface
 It may cause damage to the surface by sputtering off atoms from
the surface.
Nucleation and growth of the film
The nucleation process and growth kinetics of the film
depend on several growth parameters including:
 Laser parameters
 Surface temperature
 Substrate surface
 Background pressure
Types of deposited film
three-dimensional island
growth
two-dimensional monolayer
growth of separate islands on top of a full
monolayer
Conclusion
 Flexible, easy to implement
 Exact transfer of complicated materials
 Variable growth rate
 Atoms arrive in bunches, allowing for much more controlled
deposition
 When compared to other thin film techniques (e.g. chemical
vapour deposition, sol-gel, sputtering, etc), PLD does not
need expensive or corrosive precursors,large volume targets.
 Neither it need very high temperature and/or pressure
Pulse laser deposition of thin film
Pulse laser deposition of thin film

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Pulse laser deposition of thin film

  • 1.
  • 2. Pulsed laser deposition of thin films HASNAIN JAVED BS HONS. DEPARTMENT OF PHYSICS UNIVERSITY OF GUJRAT, GUJRAT
  • 3. What is thin film?  A thin film is a layer of material ranging from fractions of a nanometer to several micrometer (1 nm - µm) in thickness.
  • 4. Thin film is used to modify Physical characteristics Electrical conductivity Chemical inertness Chemical characteristics decoration
  • 5. Thin Film Deposition  The act of applying thin film on a substrate.  Transfer atoms from target to a vapour and then deposite on a substrate
  • 6. optics electricity computer magnetics Solar cells Applications of thin films
  • 7. Ways to deposit thin films Chemical deposition  Plating  Chemical solution deposition  Spin coating  Chemical vapor deposition  Atomic layer deposition Physical deposition  Sputtering  Pulse laser deposition
  • 9. Target:! (metals, semiconductors…) Laser: (UV, 10 ns) Vacuum: Atmospheres to ultrahigh vacuum or inert gas Pulsed Laser Deposition With the pulsed laser deposition (PLD) method, thin films are prepared by the ablation of one or more targets illuminated by a focused pulsed- laser beam.
  • 10. Gas and ultra high vacume Ultra high vacume  In vacuum, the plume does not expand unidirectionally  The ejected species diffuse in the plume and collide with each other, which leads to a rapid thermalization of the particle cloud. Gas  Ambient gas scatters and attenuates the plume  changing its spatial distribution  the deposition rate  kinetic energy distribution of the different species.
  • 11. Process in PLD  The removal of atoms from the bulk material is done by vaporization of the bulk at the surface region in a state of non-equilibrium.  Thus transferring some of their energy to the lattice of the target.The surface of the target is then heated up and vaporized.
  • 13. Cont… Melting (tens of ns), Evaporation, Plasma Formation (microseconds), Resolidification
  • 14. Dynamic of the plasma  Material expands in a plasma parallel to the normal vector of the target surface towards the substrate.  The spatial distribution of the plume is dependent on the background pressure inside the PLD chamber. The dependency of the plume shape on the pressure can be described by  The vacuum stage, where the plume is very narrow and forward directed;  The intermediate region where a splitting of the high and less energetic species can be observed
  • 15. Deposition of the ablation material  The high energetic species ablated from the target are bombarding the substrate surface  It may cause damage to the surface by sputtering off atoms from the surface.
  • 16. Nucleation and growth of the film The nucleation process and growth kinetics of the film depend on several growth parameters including:  Laser parameters  Surface temperature  Substrate surface  Background pressure
  • 17. Types of deposited film three-dimensional island growth two-dimensional monolayer growth of separate islands on top of a full monolayer
  • 18. Conclusion  Flexible, easy to implement  Exact transfer of complicated materials  Variable growth rate  Atoms arrive in bunches, allowing for much more controlled deposition  When compared to other thin film techniques (e.g. chemical vapour deposition, sol-gel, sputtering, etc), PLD does not need expensive or corrosive precursors,large volume targets.  Neither it need very high temperature and/or pressure