(1) LEDs use a p-n junction made of direct bandgap semiconductors that emits photons when electrically biased through injected minority carrier recombination. (2) Edge emitter LEDs have a thin active layer sandwiched between transparent guiding layers, allowing light to propagate and emit from the end face into smaller NA fibers for high coupling efficiency. (3) Double heterostructure LEDs provide the best performance with internal quantum efficiencies up to 80% due to high radiative recombination in the active region.