OPTICAL FIBER DETECTOR NAME:-  SANDEEP KUMAR CLASS:-  B.TECH 4 th YEAR BRANCH:- ECE
CONTENTS PHASE AND POLARIZATION FIBER SENSORS INTRINSIC FIBER SENSORS EXTRINSIC FIBER SENSORS
INTRODUCTION IT IS PART OF OPTICAL FIBER RECEIVER IT CONVERTS  OPTICAL  SIGNAL INTO  ELECTRICAL  SIGNAL THE ELCTRON EXCITED FROM  VALANCE  BAND TO  CONDUCTION  BAND   REQUIRED LOW  BIAS VOLTAGE
PROCESS OF OPTICAL FIBER DETECTOR ABSORPTION:  TRANSPORTAION OF CARRIER:  GENERATION OF PHOTOCURRENT:
PARAMETERS OF OPTICAL FIBER DETECTOR Responsivity :  Quantum Efficiency : Capacitance :  Response Time : Long wavelength cutoff :   Wavelength = hc/Eg noise equivalent power (NEP)  : detectivity  : Figure 1— C-V Curve
PRINCIPLE OF OPERATION When a  photon  strikes the diode, it  excites an electron , creating a mobile electron and a positively charged  hole. If absorption occurs in depletion region,or  diffusion  length ,carriers are  swept  from the junction by  built-in   field  .photocurrent is accured
TYPES OF OPTICAL FIBER DETECTOR THE  OPTICAL FIBER DETECTOR IS BASICALLY THREE TYPE :- P-N PHOTODIODE P-I-N PHOTODIODE AVALANCHE PHOTODIODE
(1)   P-N PHOTODIODE IF INCIDENT PHOTONS HAVE  E p = hf =≥  E g   THEN  ELECTRONS MOVE FROM  VALACE BAND TO CONDUCTION BAND
(2)   P-I-N PHOTODIODE it consists of a thick, lightly doped  intrinsic layer  sandwiched between thin p and n regions . The word intrinsic means “natural”, “un-doped”.  positive-intrinsic-negative .
PIN Photodiode
THE PIN PHOTODIODE IS TWO TYPES (1)  FRONT ILLUMINATION PD :-   The light passes through the thin  p  region  and generates electron-hole pairs in the thick  intrinsic layer .  (2)   REAR-ILLUMINATION PD :-   light enters the active region through a heavily doped  n +   layer.  This layer is transparent to the incident light because its  energy   gap is larger  than the energy of incident photons.
 
(3)AVALANCHE PHOTODIODE The free  carriers created  by  absorbed photon .  A  collision  of carriers with neutral atoms ,bound electrons break out of the valence shell.  The  secondary carrier   accelerate  and create new carriers.  Require high-voltage
AVALANCHE PHOTODIODE PROCESSS Figure 4 — APD
PARAMETERS OF AVALANCH PHOTODIODE IMPACT IONISATION COEFFICIENT RESPONSE TIME THRESHOLD IONISATION ENERGY MULTIPLICATION FACTOR OR CURRENT GAIN RESPONSIVITY
TYPES OF SENSORS PHASE AND POLARIZATION FIBER SENSORS INTRINSIC SENSOR (1)OPTICAL MICROBENDING SENSOR  (2)OPTICAL FLOW METER SENSOR
EXTRINSIC SENSOR (1)OPTICAL FIBER LEVEL  DETECTOR (2)PHOTOELASTIC PRESSURE  DETECTOR (3)FLUOROPTIC TEMPERATURE DETECTOR (4)OPTICAL FIBER LASER  DOPPLER VELOCIMETER
PHASE FIBER SENSOR
POLARIZATION FIBER SENSOR
FIBER MICROBENDING INTIRINSIC SENSOR
INTRINSIC OPTICAL FIBER FLOW METER
EXTRINSIC FIBER OPTICAL FLUID LEVEL DETECTOR
PHOTO ELASTIC   PRESSURE   SENSOR
FLUOROOPTIC TEMPERATURE SENSOR
FIBER  LASER DOPPLER    VELOCIMETER
THANK YOU VERY MUCH

Optical Fibre Detector

  • 1.
    OPTICAL FIBER DETECTORNAME:- SANDEEP KUMAR CLASS:- B.TECH 4 th YEAR BRANCH:- ECE
  • 2.
    CONTENTS PHASE ANDPOLARIZATION FIBER SENSORS INTRINSIC FIBER SENSORS EXTRINSIC FIBER SENSORS
  • 3.
    INTRODUCTION IT ISPART OF OPTICAL FIBER RECEIVER IT CONVERTS OPTICAL SIGNAL INTO ELECTRICAL SIGNAL THE ELCTRON EXCITED FROM VALANCE BAND TO CONDUCTION BAND REQUIRED LOW BIAS VOLTAGE
  • 4.
    PROCESS OF OPTICALFIBER DETECTOR ABSORPTION: TRANSPORTAION OF CARRIER: GENERATION OF PHOTOCURRENT:
  • 5.
    PARAMETERS OF OPTICALFIBER DETECTOR Responsivity : Quantum Efficiency : Capacitance : Response Time : Long wavelength cutoff : Wavelength = hc/Eg noise equivalent power (NEP) : detectivity : Figure 1— C-V Curve
  • 6.
    PRINCIPLE OF OPERATIONWhen a photon strikes the diode, it excites an electron , creating a mobile electron and a positively charged hole. If absorption occurs in depletion region,or diffusion length ,carriers are swept from the junction by built-in field .photocurrent is accured
  • 7.
    TYPES OF OPTICALFIBER DETECTOR THE OPTICAL FIBER DETECTOR IS BASICALLY THREE TYPE :- P-N PHOTODIODE P-I-N PHOTODIODE AVALANCHE PHOTODIODE
  • 8.
    (1) P-N PHOTODIODE IF INCIDENT PHOTONS HAVE E p = hf =≥ E g THEN ELECTRONS MOVE FROM VALACE BAND TO CONDUCTION BAND
  • 9.
    (2) P-I-N PHOTODIODE it consists of a thick, lightly doped intrinsic layer sandwiched between thin p and n regions . The word intrinsic means “natural”, “un-doped”. positive-intrinsic-negative .
  • 10.
  • 11.
    THE PIN PHOTODIODEIS TWO TYPES (1) FRONT ILLUMINATION PD :- The light passes through the thin p region and generates electron-hole pairs in the thick intrinsic layer . (2) REAR-ILLUMINATION PD :- light enters the active region through a heavily doped n + layer. This layer is transparent to the incident light because its energy gap is larger than the energy of incident photons.
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    (3)AVALANCHE PHOTODIODE Thefree carriers created by absorbed photon . A collision of carriers with neutral atoms ,bound electrons break out of the valence shell. The secondary carrier accelerate and create new carriers. Require high-voltage
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    PARAMETERS OF AVALANCHPHOTODIODE IMPACT IONISATION COEFFICIENT RESPONSE TIME THRESHOLD IONISATION ENERGY MULTIPLICATION FACTOR OR CURRENT GAIN RESPONSIVITY
  • 16.
    TYPES OF SENSORSPHASE AND POLARIZATION FIBER SENSORS INTRINSIC SENSOR (1)OPTICAL MICROBENDING SENSOR (2)OPTICAL FLOW METER SENSOR
  • 17.
    EXTRINSIC SENSOR (1)OPTICALFIBER LEVEL DETECTOR (2)PHOTOELASTIC PRESSURE DETECTOR (3)FLUOROPTIC TEMPERATURE DETECTOR (4)OPTICAL FIBER LASER DOPPLER VELOCIMETER
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    EXTRINSIC FIBER OPTICALFLUID LEVEL DETECTOR
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    PHOTO ELASTIC PRESSURE SENSOR
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    FIBER LASERDOPPLER VELOCIMETER
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