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The document discusses heterojunction bipolar transistors (HBTs) and their advantages over traditional bipolar junction transistors (BJTs). It notes that BJTs have drawbacks like injection of holes into the emitter and large emitter-base storage capacitance. To address this, HBTs use a heterojunction between different semiconductor materials that creates a higher barrier to holes, reducing hole injection. This allows for lower emitter doping and smaller emitter-base capacitance, resulting in higher speed, current gain, and efficiency. The document provides examples of HBTs using germanium and gallium arsenide, and outlines the material properties and band diagrams for these structures. It concludes by listing additional
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Tunnel Diode (Esaki Diode )
A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
Tunnel diodes were first manufactured by Sony in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made from gallium arsenide and silicon materials. They are used in frequency converters and detectors.[4] They have negative differential resistance in part of their operating range, and therefore are also used as oscillators, amplifiers, and in switching circuits using hysteresis.
Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
The highest frequency room-temperature solid-state oscillators are based on the resonant-tunneling diode (RTD).[6]
There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
Optoelectronics seminar: MESFET
The document discusses the Metal Semiconductor Field Effect Transistor (MESFET). It describes the MESFET's structure, operating principles, and advantages over other transistors like MOSFETs for microwave applications. The MESFET uses a Schottky barrier gate and has a channel made of gallium arsenide, giving it higher electron mobility and saturation velocity than silicon-based devices. This makes MESFETs well-suited for power amplifiers and switches operating at microwave frequencies above 2 GHz.
Opto electronics
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
Single Electron Transistor
Coulomb blockade occurs when the electrostatic energy required to add a single electron to a microscopic conductor is greater than the thermal energy. This results in a gap in the conductor's energy levels and prevents electron tunneling below a threshold voltage that depends on temperature. A single electron transistor uses controlled electron tunneling between a source and drain electrode connected by a quantum dot or wire channel to amplify current. It operates by changing the quantum system's energy levels with a gate voltage to allow electrons to tunnel one by one. Mathematical modeling of the single electron transistor involves calculating tunneling rates and probabilities based on free energy changes from electron additions or removals.
Junctionless transistors
This document discusses junctionless transistors as an alternative to traditional transistors. Junctionless transistors have no p-n junctions and instead use uniformly doped semiconductor material. They offer advantages like simpler fabrication without implantation or annealing steps, reduced short channel effects, higher carrier mobility, and lower leakage current. However, they can have greater threshold voltage variability than conventional transistors. The document provides details on the structure and operation of junctionless transistors, comparing them to traditional transistors and discussing their potential to enable further device miniaturization.
Built-in potential and extrinsic Fermi level in p-n junction diode
Built-in potential and extrinsic Fermi level in p-n junction diodeRCC Institute of Information Technology
Calculation of built-in potential and determination of nature of extrinsic Fermi level in p-n junction diodeLaser diode fabrication
This document summarizes the fabrication process of semiconductor laser diodes at the Solid State Physics Laboratory (DRDO). It first introduces lasers and semiconductor lasers. It then outlines the key steps in the fabrication process, which includes epitaxial growth on a GaAs wafer, photolithography to pattern mesas, mask etching, dielectric deposition, metallization for contacts, cleaving individual laser facets, and bonding to a heat sink. The document focuses on the quantum well laser structure and process used at the SSPL for applications such as laser range finders and dazzler weapons.
Generation and Recombination related to Carrier Transport
This document summarizes lecture material from an Electronic Devices course taught by Arpan Deyasi at RCC Institute of Information Technology in Kolkata, India. The document discusses quasi-Fermi levels, generation and recombination of carriers, and the continuity equation as it relates to excess carriers in semiconductors. Key points include definitions of quasi-Fermi levels for n-type and p-type materials, equations describing generation and recombination rates, and the continuity equation modeling carrier transport and generation/recombination processes in non-uniformly doped semiconductors.
Recommended
Tunnel Diode (Esaki Diode )
A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
Tunnel diodes were first manufactured by Sony in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made from gallium arsenide and silicon materials. They are used in frequency converters and detectors.[4] They have negative differential resistance in part of their operating range, and therefore are also used as oscillators, amplifiers, and in switching circuits using hysteresis.
Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
The highest frequency room-temperature solid-state oscillators are based on the resonant-tunneling diode (RTD).[6]
There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
Optoelectronics seminar: MESFET
The document discusses the Metal Semiconductor Field Effect Transistor (MESFET). It describes the MESFET's structure, operating principles, and advantages over other transistors like MOSFETs for microwave applications. The MESFET uses a Schottky barrier gate and has a channel made of gallium arsenide, giving it higher electron mobility and saturation velocity than silicon-based devices. This makes MESFETs well-suited for power amplifiers and switches operating at microwave frequencies above 2 GHz.
Opto electronics
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
Single Electron Transistor
Coulomb blockade occurs when the electrostatic energy required to add a single electron to a microscopic conductor is greater than the thermal energy. This results in a gap in the conductor's energy levels and prevents electron tunneling below a threshold voltage that depends on temperature. A single electron transistor uses controlled electron tunneling between a source and drain electrode connected by a quantum dot or wire channel to amplify current. It operates by changing the quantum system's energy levels with a gate voltage to allow electrons to tunnel one by one. Mathematical modeling of the single electron transistor involves calculating tunneling rates and probabilities based on free energy changes from electron additions or removals.
Junctionless transistors
This document discusses junctionless transistors as an alternative to traditional transistors. Junctionless transistors have no p-n junctions and instead use uniformly doped semiconductor material. They offer advantages like simpler fabrication without implantation or annealing steps, reduced short channel effects, higher carrier mobility, and lower leakage current. However, they can have greater threshold voltage variability than conventional transistors. The document provides details on the structure and operation of junctionless transistors, comparing them to traditional transistors and discussing their potential to enable further device miniaturization.
Built-in potential and extrinsic Fermi level in p-n junction diode
Built-in potential and extrinsic Fermi level in p-n junction diodeRCC Institute of Information Technology
Calculation of built-in potential and determination of nature of extrinsic Fermi level in p-n junction diodeLaser diode fabrication
This document summarizes the fabrication process of semiconductor laser diodes at the Solid State Physics Laboratory (DRDO). It first introduces lasers and semiconductor lasers. It then outlines the key steps in the fabrication process, which includes epitaxial growth on a GaAs wafer, photolithography to pattern mesas, mask etching, dielectric deposition, metallization for contacts, cleaving individual laser facets, and bonding to a heat sink. The document focuses on the quantum well laser structure and process used at the SSPL for applications such as laser range finders and dazzler weapons.
Generation and Recombination related to Carrier Transport
This document summarizes lecture material from an Electronic Devices course taught by Arpan Deyasi at RCC Institute of Information Technology in Kolkata, India. The document discusses quasi-Fermi levels, generation and recombination of carriers, and the continuity equation as it relates to excess carriers in semiconductors. Key points include definitions of quasi-Fermi levels for n-type and p-type materials, equations describing generation and recombination rates, and the continuity equation modeling carrier transport and generation/recombination processes in non-uniformly doped semiconductors.
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1. When a P-type semiconductor is joined with an N-type semiconductor, a PN junction is formed known as a semiconductor diode.
2. Semiconductor diodes are widely used as rectifiers to convert alternating current (AC) input into direct current (DC) output.
3. In a PN junction, the diffusion of majority carriers across the junction leaves behind charged acceptor and donor ions which form an electric field called the depletion region or space charge region.
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2) The I-V characteristics of a MESFET can be modeled as a voltage-controlled current source where the drain current is varied by small changes in the gate potential.
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The document discusses tunnel diodes and their switching properties. Tunnel diodes can switch between conducting and non-conducting states at very high speeds due to their narrow depletion widths allowing quantum tunneling. They have short storage times in the nanosecond range. When used as switches, the current in a tunnel diode does not change instantaneously between on and off states, but decays exponentially with a storage delay time ts dictated by the removal of stored minority carriers. Reducing carrier lifetimes and using narrow-base diodes can decrease this switching transient time.
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Tunnel diodes have the following key properties:
1. They were invented in 1957 and work by allowing electrons to tunnel through a very narrow p-n junction using the quantum tunneling effect.
2. They have an unusual current-voltage characteristic with a negative-resistance region, which makes them useful for high-frequency oscillators.
3. Their main applications are in high-speed switching, signal detection, and frequency generation due to their ability to operate at frequencies into the microwave range resulting from their fast switching speeds.
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Gallium Nitride (GaN) transistor models have evolved from GaAs (gallium arsenide) transistor models; however there are many advantages GaN offers:
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• Higher operating temperature (over 150°C channel temperature)
• Higher power density (5 to 30 W/mm)
• Durable and crack-resistant material
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1) The document discusses the capacitance-voltage characteristics of a MOS capacitor. It derives expressions for surface charge, depletion approximation, onset of strong inversion, and calculation of capacitance in different regimes.
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PHYSICS OF SEMICONDUCTOR DEVICES
1. When a P-type semiconductor is joined with an N-type semiconductor, a PN junction is formed known as a semiconductor diode.
2. Semiconductor diodes are widely used as rectifiers to convert alternating current (AC) input into direct current (DC) output.
3. In a PN junction, the diffusion of majority carriers across the junction leaves behind charged acceptor and donor ions which form an electric field called the depletion region or space charge region.
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The Laboratory of Vacuum Technologies develops and produces vacuum components and customized coating deposition systems. It offers magnetrons, ion beam sources, plasma generators, and other vacuum equipment. The laboratory has expertise in magnetron sputtering, ion beam cleaning and etching, plasma nitriding, evaporation, and other vacuum coating processes. It also provides engineering consulting, maintenance services, and refurbishment of existing vacuum process tools. Key capabilities include high deposition rates up to 40 μm/min, large area etching, and customized systems for specialized applications.
P n junction--eema
The document discusses P-N junctions, which are formed at the interface between P-type and N-type semiconductors. When these materials come into contact, majority charge carriers diffuse across the junction, leaving behind charged dopant ions. This creates an electric field and depletion region across the junction. At equilibrium with no applied voltage, a built-in potential barrier forms that prevents further carrier recombination. P-N junctions can be forward or reverse biased by an external voltage, affecting the electric field and current flow. They are the basic components of many semiconductor devices such as diodes, transistors, and solar cells.
MESFET
1) MESFET stands for Metal-Semiconductor Field Effect Transistor and consists of a conducting channel between a source and drain contact that is controlled by a Schottky metal gate.
2) The I-V characteristics of a MESFET can be modeled as a voltage-controlled current source where the drain current is varied by small changes in the gate potential.
3) MESFETs have advantages over other transistors for RF applications due to their high electron mobility, low stray capacitance from the Schottky gate, and negative temperature coefficient.
Semiconductor fundamentals
This document provides an overview of semiconductor fundamentals and classifications. It discusses the properties of metals, insulators, and semiconductors. Semiconductors are classified as elemental, compound, narrow band-gap, wide band-gap, oxide, magnetic, organic, and low-dimensional. Elemental semiconductors like silicon are widely used but have limitations for optoelectronics. Compound semiconductors like GaAs have advantages for applications requiring high speeds or light emission/detection.
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The document discusses tunnel diodes and their switching properties. Tunnel diodes can switch between conducting and non-conducting states at very high speeds due to their narrow depletion widths allowing quantum tunneling. They have short storage times in the nanosecond range. When used as switches, the current in a tunnel diode does not change instantaneously between on and off states, but decays exponentially with a storage delay time ts dictated by the removal of stored minority carriers. Reducing carrier lifetimes and using narrow-base diodes can decrease this switching transient time.
Semiconductor diode | semiconductor diode ppt | semiconductor diode for schoo...
Semiconductor diodes are made from semiconducting materials like silicon and germanium. There are several types of semiconductor diodes that emphasize different physical aspects or have special applications. Some of the main types are p-n junction diodes, Schottky diodes, Zener diodes, photodiodes, and light-emitting diodes (LEDs). Semiconductor diodes are widely used in electronics for rectification, voltage regulation, light emission, light detection, and other functions.
Study of semiconductor with positron
This document summarizes the use of positron annihilation techniques to study semiconductors and lattice defects. Positrons emitted from radioactive nuclei can be used to probe vacancy-type defects in materials. When a positron encounters an electron, they annihilate and emit gamma rays. By analyzing properties of the gamma rays like energy, momentum, and timing, information can be gained about the defect where annihilation occurred, allowing quantification of defect types, concentrations, and charge states in semiconductors. Common positron annihilation techniques described include positron lifetime spectroscopy and Doppler broadening spectroscopy.
Photo-detector by GIRISH HARMUKH
This document discusses different types of photodetectors. It describes photoconductive detectors like light dependent resistors (LDRs) and junction photodetectors including p-n photodiodes, PIN photodiodes, avalanche photodiodes, and Schottky photodiodes. PIN photodiodes are presented as an improvement over p-n photodiodes by having a larger depletion region for higher quantum efficiency. Avalanche photodiodes provide internal gain through impact ionization. Schottky photodiodes have a high speed due to being majority carrier devices. Phototransistors are also discussed as providing gain. Applications mentioned include fiber optics, cameras, medical devices, barcodes, and security systems
avalanchephotodid.pptx
The document discusses avalanche photodiodes (APDs) and their bandwidth. It begins by introducing APDs and noting that their performance depends on efficiency in converting light to electrical signals. It then explains the principle of APDs, describing how they are designed to operate in reverse bias conditions and use the photoelectric effect. The rest of the document discusses key aspects of APDs like their gain from avalanche multiplication, noise, common materials used, detector structure, equivalent circuits, carrier transit time, capacitance, bandwidth limitations, merits like large gain and sensitivity, demerits like higher noise and non-linear output, and applications like laser range finders and high-speed data communications.
Tunnel diode(1)
Tunnel diodes have the following key properties:
1. They were invented in 1957 and work by allowing electrons to tunnel through a very narrow p-n junction using the quantum tunneling effect.
2. They have an unusual current-voltage characteristic with a negative-resistance region, which makes them useful for high-frequency oscillators.
3. Their main applications are in high-speed switching, signal detection, and frequency generation due to their ability to operate at frequencies into the microwave range resulting from their fast switching speeds.
Double gate mosfet
This document summarizes the double-gate MOSFET transistor. It begins by describing the basic operation of a single-gate MOSFET and then discusses the scaling limitations of bulk MOSFETs, such as decreasing carrier mobility and threshold voltage rolloff as channel length decreases. It introduces the double-gate MOSFET as a way to better control the channel and reduce short-channel effects. Key features of the double-gate MOSFET include two gates that control the ultra-thin body channel and allow direct scaling to small channel lengths of 20nm or less. Fabricating double-gate MOSFETs using a silicon-on-insulator approach provides benefits like low leakage currents. The double gates provide improved performance
Photonic crystals
Photonic crystals are periodic optical nanostructures that affect the propagation of light. They contain regions of high and low dielectric constants arranged in a repeating pattern, allowing certain wavelengths of light to pass through while others are forbidden from propagating, known as a photonic band gap. Photonic crystals have applications in lasers, optical fibers, biosensing and more. They can be fabricated through methods like layer deposition, photolithography or drilling holes to achieve one, two or three-dimensional periodicity.
Resonant Tunneling
The document discusses resonant tunneling through a double quantum well system under an applied electric field. It first presents the mathematical formulations for resonant tunneling under unbiased and biased conditions. It then describes the condition for resonant tunneling, which is when the thickness of the middle barrier allows resonant tunneling between adjacent quantum wells. Finally, it shows calculations of the conductance for the system in the limits of low temperature and bias, relating it to the quantum unit of conductance.
Gallium Nitride (GaN)
This report takes a look into the patenting activity around gallium Nitride uncovering the companies, inventors, and key applications.
GaN is a binary III-V direct bandgap semiconductor commonly used in LEDs. Its wide-band gap of 3.4 eV affords its special properties for applications in optoelectronic, high-power and high-frequency devices. Because GaN offers very high breakdown voltages, high electron mobility, and saturation velocity it is also an ideal candidate for high-power and high-temperature microwave applications like RF power amplifiers at microwave frequencies and high-voltage switching devices for power grids. Solutions that use GaN-based RF transistors are also replacing the magnetrons used in microwave ovens.
Gallium Nitride (GaN) transistor models have evolved from GaAs (gallium arsenide) transistor models; however there are many advantages GaN offers:
• Higher operating voltage (over 100-V breakdown)
• Higher operating temperature (over 150°C channel temperature)
• Higher power density (5 to 30 W/mm)
• Durable and crack-resistant material
GaN devices are often grown on SiC (silicon carbide) substrates, but to achieve lower-cost GaN devices, they can be grown on sapphire and silicon wafers. GaN’s wide bandgap allows for higher breakdown voltages and operation at high temperatures. The high thermal conductivity of SiC makes it a better substrate than silicon for power amplifier applications that require good heat sinking.
Mxenes presentation.pptx
MXenes are a class of two-dimensional inorganic compounds composed of layers of transition metal carbides, nitrides, or carbonitrides. They have many desirable properties including hardness, high melting points, oxidation resistance, and high electrical and thermal conductivity. Common synthesis methods involve selectively etching MAX precursor phases, which are hexagonal layered transition metal carbides and/or nitrides. MXenes show potential for applications as sensors due to their hydrophilic surfaces, high surface areas, and ability to host intercalants.
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Nowadays, mobile consumer electronics devices integrate various wireless interfaces like WIFI, Bluetooth, GPRS and GPS. Various approaches exist to protect the wireless interfaces against ESD stress. In recent years, researchers have focused on so‐called 'co‐design' techniques to solve both functional and protection constraints together which requires both RF and ESD design skills. However many IC designers still prefer to work with 'plug‐n‐play' protection concepts where the ESD clamps exhibit low parasitic capacitance, low series resistance and low leakage. This paper presents measurement results of 3 different SCR based protection approaches that exhibit high Q‐factor and low and stable parasitic capacitance over a broad voltage and frequency range. The clamps are used for protection of LNA circuits in 90nm and 40nm Low Power (LP) CMOS technologies.
Foundation of MOS Capacitor
This document discusses the MOS capacitor structure. It begins by defining the key components of a MOS capacitor as a semiconductor substrate, insulating oxide layer, and conducting metal layer. The document then examines the band diagram of an n-type silicon MOS capacitor at zero bias. It explains how applying a positive or negative bias to the metal layer can cause the band diagram to deviate, resulting in accumulation, depletion, or inversion at the silicon surface. Key relationships between the metal and silicon surface potentials are also defined for a p-type silicon MOS capacitor under varying bias conditions.
Hetero junction
The document discusses heterojunctions and p-n junctions. It defines a heterojunction as the interface between two dissimilar semiconductors with different band gaps. There are three types of heterojunctions based on band alignment: type I where bands straddle, type II where bands are staggered, and type III where there is a broken gap. A p-n heterojunction diode forms when a p-doped and n-doped semiconductor meet; electrons flow from the higher to lower Fermi level side and holes in the opposite direction.
C-V characteristics of MOS Capacitor
1) The document discusses the capacitance-voltage characteristics of a MOS capacitor. It derives expressions for surface charge, depletion approximation, onset of strong inversion, and calculation of capacitance in different regimes.
2) Graphs of capacitance versus voltage are shown and explained for accumulation, flat-band, depletion, and inversion conditions.
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- 1. Heterojunction Bipolar Transistor Course Coordinator: Arpan Deyasi 3/3/2021 1 Arpan Deyasi, India
- 2. What are the drawbacks of BJT? Injection of holes in Emitter from Base Larger Emitter-Base storage capacitance Effective decrease of electron injection efficiency Lowers CE current gain Reduction in speed 3/3/2021 2 Arpan Deyasi, India
- 3. Alternative Solutions? I. Increase of Emitter doping Larger Emitter-Base storage capacitance Reduction in speed 3/3/2021 3 Arpan Deyasi, India
- 4. Alternative Solutions? Reduction in minority charge diffusion in Emitter II. Make higher potential barrier for holes in Base region Smaller Emitter-Base storage capacitance Higher operating speed Effective increase of electron injection efficiency Highers CE current gain 3/3/2021 4 Arpan Deyasi, India
- 5. Additional benefits A. Reduction in Emitter doping Smaller Emitter-Base storage capacitance Higher operating speed 3/3/2021 5 Arpan Deyasi, India
- 6. Additional benefits 3/3/2021 6 Arpan Deyasi, India B. Higher Base doping Reduction in lateral Base resistance Higher power- bandwidth product Improves noise performance Shorter Base Transit time Higher current gain – bandwidth product Improved high frequency performance Reduction of depletion region encroachments into Base Higher output conductance Reduced susceptibility to breakdown
- 7. Effects of structural modification Both electrons and holes will face different barrier height Holes are not allowed to go back into emitter Drastic reduction in hole injection from base Requirement of higher emitter doping is eliminated Reduction in band narrowing effect 3/3/2021 7 Arpan Deyasi, India
- 8. n-Ge p-GaAs n-GaAs E C B 3/3/2021 8 Arpan Deyasi, India Schematic structure
- 9. n-Ge p-GaAs Ψ2 Ψ1 ΔEC ΔEV z1 z2 EF EV1 EV2 EC1 EC2 3/3/2021 9 Arpan Deyasi, India Band diagram
- 11. parameters Ge GaAs Lattice constant 5.646 Å 5.633 Å Electron affinity 4.0 eV 4.07 eV Bandgap 0.8 eV 1.43 eV Conduction band offset ΔEC = (4.07 - 4.0) eV = 0.07 eV Valence band offset ΔEV = (1.43 - 0.8) eV = 0.63 eV 3/3/2021 11 Arpan Deyasi, India Results
- 12. 3/3/2021 Arpan Deyasi, India 12 Results Built-in potential 1 2 ψ ψ ψ = + According to charge-neutrality condition 1 2 D A z N z N =
- 13. 3/3/2021 Arpan Deyasi, India 13 Results At junction, electric flux is continuous 0 1 1 0 2 2 r r D E E ε ε ε ε = = where 1 1 1 1 V E z ψ − = 2 2 2 2 V E z ψ − =
- 14. 3/3/2021 Arpan Deyasi, India 14 Results Master equation 1 1 1 2 2 2 ( ) ( ) r D r A V N V N ψ ε ψ ε − = −
- 15. Results from calculation Holes and electrons see different barriers Holes are not allowed to reach to Emitter Large reduction in hole injection Higher Emitter doping is not required Comparatively lower Emitter doping Lower junction capacitance Higher speed of operation 3/3/2021 15 Arpan Deyasi, India
- 16. Advantages of HBT offers low base resistance and low forward transit time due to much higher base doping offers higher cut-off frequency offers very low collector to substrate capacitance due to semi- insulating GaAs substrate higher efficiency can be achieved as small base voltage variation can also turn off the HBT device completely offers wideband impedance matching 3/3/2021 16 Arpan Deyasi, India
- 17. Disadvantages of HBT Si and SiGe based HBTs offer low breakdown voltage InP HBTs are brittle and expensive substrate 3/3/2021 17 Arpan Deyasi, India