This document discusses the JFET (junction field-effect transistor). It begins by defining a field-effect transistor as a device where the electric field controlling current flow is perpendicular to the direction of current. It then describes the structure of an n-channel JFET, showing how a p-type channel is created between two n-type regions. Key features of the JFET are that it is a voltage-controlled, majority-carrier device with higher input impedance and lower output impedance than BJT transistors. The document provides equations for calculating the pinch-off voltage and expressions for transconductance. It concludes by outlining some applications of JFETs in RF amplifiers, measuring instruments, oscillators, and digital circuits
This document discusses the MOS capacitor structure. It begins by defining the key components of a MOS capacitor as a semiconductor substrate, insulating oxide layer, and conducting metal layer. The document then examines the band diagram of an n-type silicon MOS capacitor at zero bias. It explains how applying a positive or negative bias to the metal layer can cause the band diagram to deviate, resulting in accumulation, depletion, or inversion at the silicon surface. Key relationships between the metal and silicon surface potentials are also defined for a p-type silicon MOS capacitor under varying bias conditions.
The document discusses optical processes like absorption, emission, and stimulated emission. It covers properties of stimulated emission, types of recombination processes, Einstein's relation between stimulated and spontaneous emission, population inversion, and derivation of the absorption coefficient. The key topics are optical processes in optoelectronics, Einstein's relation describing radiative transitions, and the derivation of the absorption coefficient from transition rates.
This document discusses the I-V characteristics of a p-n junction diode. It derives equations for the current-voltage relationship under forward and reverse bias conditions. The derivation considers minority carrier diffusion currents and uses low-level injection approximations. It also examines the temperature dependence of the I-V characteristics and derives an equation showing the exponential relationship between current and temperature.
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
This document discusses a lecture on tunnel diodes given by Arpan Deyasi of RCC Institute of Information Technology, Kolkata, India. The lecture covers the mechanism of carrier transport in tunnel diodes, which is tunneling. It also discusses the criteria for tunneling to occur, including a lower depletion width, lower effective mass, and degenerate doping. Examples are given of materials that can satisfy these criteria, such as semiconductors with large bandgaps or lower effective masses. The characteristic I-V curve of a tunnel diode is presented, showing its negative differential resistance region. Finally, applications of tunnel diodes such as in oscillators are mentioned.
The document discusses the fundamentals of MOSFETs (metal-oxide-semiconductor field-effect transistors). It describes the structure of an n-channel MOSFET, including the gate, body, source, and drain. It explains the different operating modes - depletion, enhancement - for n-channel and p-channel MOSFETs depending on the applied gate-source voltage. Finally, it notes that MOSFETs are generally considered three-terminal devices due to the body effect, which influences the threshold voltage.
This document discusses carrier transport in semiconductors. It covers topics like drift, diffusion, calculation of drift velocity, scattering mechanisms, and Einstein's relation. The document was created by Arpan Deyasi, who is a course coordinator for the Electronic Devices course at RCC Institute of Information Technology in Kolkata, India. It contains calculations and explanations of concepts related to carrier transport.
This document discusses the JFET (junction field-effect transistor). It begins by defining a field-effect transistor as a device where the electric field controlling current flow is perpendicular to the direction of current. It then describes the structure of an n-channel JFET, showing how a p-type channel is created between two n-type regions. Key features of the JFET are that it is a voltage-controlled, majority-carrier device with higher input impedance and lower output impedance than BJT transistors. The document provides equations for calculating the pinch-off voltage and expressions for transconductance. It concludes by outlining some applications of JFETs in RF amplifiers, measuring instruments, oscillators, and digital circuits
This document discusses the MOS capacitor structure. It begins by defining the key components of a MOS capacitor as a semiconductor substrate, insulating oxide layer, and conducting metal layer. The document then examines the band diagram of an n-type silicon MOS capacitor at zero bias. It explains how applying a positive or negative bias to the metal layer can cause the band diagram to deviate, resulting in accumulation, depletion, or inversion at the silicon surface. Key relationships between the metal and silicon surface potentials are also defined for a p-type silicon MOS capacitor under varying bias conditions.
The document discusses optical processes like absorption, emission, and stimulated emission. It covers properties of stimulated emission, types of recombination processes, Einstein's relation between stimulated and spontaneous emission, population inversion, and derivation of the absorption coefficient. The key topics are optical processes in optoelectronics, Einstein's relation describing radiative transitions, and the derivation of the absorption coefficient from transition rates.
This document discusses the I-V characteristics of a p-n junction diode. It derives equations for the current-voltage relationship under forward and reverse bias conditions. The derivation considers minority carrier diffusion currents and uses low-level injection approximations. It also examines the temperature dependence of the I-V characteristics and derives an equation showing the exponential relationship between current and temperature.
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
This document discusses a lecture on tunnel diodes given by Arpan Deyasi of RCC Institute of Information Technology, Kolkata, India. The lecture covers the mechanism of carrier transport in tunnel diodes, which is tunneling. It also discusses the criteria for tunneling to occur, including a lower depletion width, lower effective mass, and degenerate doping. Examples are given of materials that can satisfy these criteria, such as semiconductors with large bandgaps or lower effective masses. The characteristic I-V curve of a tunnel diode is presented, showing its negative differential resistance region. Finally, applications of tunnel diodes such as in oscillators are mentioned.
The document discusses the fundamentals of MOSFETs (metal-oxide-semiconductor field-effect transistors). It describes the structure of an n-channel MOSFET, including the gate, body, source, and drain. It explains the different operating modes - depletion, enhancement - for n-channel and p-channel MOSFETs depending on the applied gate-source voltage. Finally, it notes that MOSFETs are generally considered three-terminal devices due to the body effect, which influences the threshold voltage.
This document discusses carrier transport in semiconductors. It covers topics like drift, diffusion, calculation of drift velocity, scattering mechanisms, and Einstein's relation. The document was created by Arpan Deyasi, who is a course coordinator for the Electronic Devices course at RCC Institute of Information Technology in Kolkata, India. It contains calculations and explanations of concepts related to carrier transport.
The document discusses optical transmitters, specifically lasers and LEDs. It describes how lasers use stimulated emission to convert electrical signals to coherent, monochromatic light, while LEDs use spontaneous emission to produce incoherent, polychromatic light. The document also covers the differences between lasers and LEDs in terms of driving current needs, power conversion efficiency, numerical aperture, response time, junction area, lifetime, spectrum width, and cost.
This document discusses the Hall effect and its analysis for determining properties of semiconductor materials. The Hall effect can be used to:
1) Distinguish whether a semiconductor is n-type or p-type based on the nature of doping.
2) Measure the majority carrier concentration.
3) Calculate the majority carrier mobility.
The document provides equations to analyze the Hall effect for both n-type and p-type semiconductors and determine values such as Hall voltage, drift velocity, current density, and Hall coefficient.
1) The document discusses the electrical characteristics of a varactor diode, which is a diode with a variable capacitance that depends on the applied reverse bias voltage.
2) It explains the doping profile and Poisson's equation that governs the electric field and potential distribution in the diode.
3) Equations are derived for the junction capacitance as a function of the applied reverse bias voltage based on the doping profile and boundary conditions of the p-n junction.
This document discusses solar cells and photovoltaic effect. It begins by explaining that the available solar radiation bandwidth is 0.124 to 3 eV due to absorption by the ozone layer. Semiconductors with a bandgap in this range are required to convert this solar energy. Solar cells are semiconductor devices that convert sunlight directly into electrical energy using the photovoltaic effect. The photovoltaic effect occurs when photons are absorbed, promoting electrons to leave their atomic orbitals and become conductive. Key solar cell parameters like open circuit voltage, short circuit current, fill factor, and conversion efficiency are also defined and formulas to calculate them are provided. Factors affecting solar cell performance such as resistances, temperature, and band
Coulomb blockade occurs when the electrostatic energy required to add a single electron to a microscopic conductor is greater than the thermal energy. This results in a gap in the conductor's energy levels and prevents electron tunneling below a threshold voltage that depends on temperature. A single electron transistor uses controlled electron tunneling between a source and drain electrode connected by a quantum dot or wire channel to amplify current. It operates by changing the quantum system's energy levels with a gate voltage to allow electrons to tunnel one by one. Mathematical modeling of the single electron transistor involves calculating tunneling rates and probabilities based on free energy changes from electron additions or removals.
This document discusses the position of the Fermi level in intrinsic and extrinsic semiconductors. It begins by defining the intrinsic Fermi level position in an intrinsic semiconductor. It then describes how the Fermi level shifts in n-type and p-type extrinsic semiconductors due to the introduction of donor and acceptor dopants. Equations are provided for calculating the intrinsic carrier concentration and extrinsic carrier concentrations in n-type and p-type materials.
This document summarizes the electrical characteristics of n-channel MOSFETs. It describes the minority carrier concentration in the depletion region and how the depletion width changes with applied gate voltage. It then discusses the threshold voltage expression and how the threshold is affected by factors like bulk charge, fixed oxide charge and work function differences. Finally, it derives the drain current equation and shows how the I-V characteristics are affected by channel length modulation under different regions of operation.
This document discusses the density of states (DoS) for bulk semiconductors. It begins by defining DoS as the number of available energy states per unit energy interval per unit dimension in real space. It then derives the DoS for bulk semiconductors using the Bloch theorem and shows that the DoS is proportional to the square root of energy. Finally, it defines the effective DoS, which accounts for occupancy based on the Fermi-Dirac distribution.
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
The document discusses different configurations and operating modes of bipolar junction transistors (BJTs). It describes the common emitter (CE), common base (CB), and common collector (CC) configurations. For each configuration, it provides expressions for the collector current (IC) and discusses characteristics like current gain, voltage gain, and input/output resistances. It also covers biasing circuits, operating points, transistor regions of operation, and fixed bias, emitter bias, and voltage divider bias configurations.
This document discusses the calculation of the built-in potential in a p-n junction. It covers determining the equilibrium electron and hole concentrations using the Fermi-Dirac distribution and relates them to the built-in potential. It also examines how the extrinsic Fermi level remains constant throughout the p-n junction under equilibrium conditions.
The document discusses the density of states (DoS) for bulk semiconductors and various quantum structures such as quantum wells, wires, and dots. It defines DoS as the number of available energy states per unit energy interval per unit dimension. It then derives expressions for the DoS of bulk semiconductors, quantum wells, quantum wires, and notes that quantum dots have a discrete DoS with delta function peaks.
This document discusses the electrical properties of p-n junctions. It describes abrupt and linearly graded p-n junction profiles and their depletion widths, electric fields, junction potentials, and capacitances. Equations for the depletion capacitance and diffusion capacitance of abrupt and linearly graded p-n junctions are also presented.
This document summarizes lecture material from an Electronic Devices course taught by Arpan Deyasi at RCC Institute of Information Technology in Kolkata, India. The document discusses quasi-Fermi levels, generation and recombination of carriers, and the continuity equation as it relates to excess carriers in semiconductors. Key points include definitions of quasi-Fermi levels for n-type and p-type materials, equations describing generation and recombination rates, and the continuity equation modeling carrier transport and generation/recombination processes in non-uniformly doped semiconductors.
This document summarizes a lecture on quantum wells as a deviation from ideal particle-in-a-box structures. It begins with reviewing the particle-in-a-box model and posing questions about its limitations. It then discusses how quantum wells are physically realized using different material compositions and potential profiles. The key concepts of exciton formation, electron motion in one to three dimensions, and the Schrodinger equation for quantum wells are presented. Finally, it covers two-dimensional electron gases, multiple quantum wells, superlattices, and the difference between the two structures.
This document discusses the bipolar junction transistor. It describes the emitter, collector, and base regions and their doping levels. The current gain parameters alpha and beta are defined as the ratios of various currents. Alpha is approximately 1 due to some carrier recombination and leakage currents. Beta is much greater than 1. Injection, transport, and collection efficiencies are also defined. The document discusses base width modulation and the Early effect where the base width decreases with increasing collector voltage. Punch-through breakdown occurs when the depletion regions merge.
This document discusses semiconductor materials and their properties. It covers elemental and compound semiconductors, including gallium nitride used in LEDs. It describes the band structure of semiconductors including the valence and conduction bands separated by the bandgap. Carrier generation and recombination processes are explained. Intrinsic and extrinsic semiconductors are defined based on their carrier concentrations.
This document discusses optical detectors and receivers. It describes how optical receivers convert optical signals to electrical signals using devices like p-n junction diodes, p-i-n junction diodes, and avalanche photodiodes (APDs). It explains the process of photodetection involving the absorption of photons, generation of electron-hole pairs, transportation of carriers, and collection of photocurrents. It also covers topics like quantum efficiency, internal quantum efficiency, responsivity, and comparisons of p-n junction photodiodes and p-i-n junction photodiodes. APDs are noted as having higher sensitivity due to avalanche gain but also higher operating voltages and non-linear output.
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
The document discusses the absorption coefficient in a quantum well for intraband transitions between energy levels. It presents the formula for absorption coefficient as a function of oscillator strength between levels, doping density, and Lorentzian lineshape. It derives the oscillator strength between the two lowest consecutive states in terms of the quantum well width. The absorption coefficient is then incorporated with a Lorentzian lineshape to better fit practical experimental data.
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
The document discusses optical transmitters, specifically lasers and LEDs. It describes how lasers use stimulated emission to convert electrical signals to coherent, monochromatic light, while LEDs use spontaneous emission to produce incoherent, polychromatic light. The document also covers the differences between lasers and LEDs in terms of driving current needs, power conversion efficiency, numerical aperture, response time, junction area, lifetime, spectrum width, and cost.
This document discusses the Hall effect and its analysis for determining properties of semiconductor materials. The Hall effect can be used to:
1) Distinguish whether a semiconductor is n-type or p-type based on the nature of doping.
2) Measure the majority carrier concentration.
3) Calculate the majority carrier mobility.
The document provides equations to analyze the Hall effect for both n-type and p-type semiconductors and determine values such as Hall voltage, drift velocity, current density, and Hall coefficient.
1) The document discusses the electrical characteristics of a varactor diode, which is a diode with a variable capacitance that depends on the applied reverse bias voltage.
2) It explains the doping profile and Poisson's equation that governs the electric field and potential distribution in the diode.
3) Equations are derived for the junction capacitance as a function of the applied reverse bias voltage based on the doping profile and boundary conditions of the p-n junction.
This document discusses solar cells and photovoltaic effect. It begins by explaining that the available solar radiation bandwidth is 0.124 to 3 eV due to absorption by the ozone layer. Semiconductors with a bandgap in this range are required to convert this solar energy. Solar cells are semiconductor devices that convert sunlight directly into electrical energy using the photovoltaic effect. The photovoltaic effect occurs when photons are absorbed, promoting electrons to leave their atomic orbitals and become conductive. Key solar cell parameters like open circuit voltage, short circuit current, fill factor, and conversion efficiency are also defined and formulas to calculate them are provided. Factors affecting solar cell performance such as resistances, temperature, and band
Coulomb blockade occurs when the electrostatic energy required to add a single electron to a microscopic conductor is greater than the thermal energy. This results in a gap in the conductor's energy levels and prevents electron tunneling below a threshold voltage that depends on temperature. A single electron transistor uses controlled electron tunneling between a source and drain electrode connected by a quantum dot or wire channel to amplify current. It operates by changing the quantum system's energy levels with a gate voltage to allow electrons to tunnel one by one. Mathematical modeling of the single electron transistor involves calculating tunneling rates and probabilities based on free energy changes from electron additions or removals.
This document discusses the position of the Fermi level in intrinsic and extrinsic semiconductors. It begins by defining the intrinsic Fermi level position in an intrinsic semiconductor. It then describes how the Fermi level shifts in n-type and p-type extrinsic semiconductors due to the introduction of donor and acceptor dopants. Equations are provided for calculating the intrinsic carrier concentration and extrinsic carrier concentrations in n-type and p-type materials.
This document summarizes the electrical characteristics of n-channel MOSFETs. It describes the minority carrier concentration in the depletion region and how the depletion width changes with applied gate voltage. It then discusses the threshold voltage expression and how the threshold is affected by factors like bulk charge, fixed oxide charge and work function differences. Finally, it derives the drain current equation and shows how the I-V characteristics are affected by channel length modulation under different regions of operation.
This document discusses the density of states (DoS) for bulk semiconductors. It begins by defining DoS as the number of available energy states per unit energy interval per unit dimension in real space. It then derives the DoS for bulk semiconductors using the Bloch theorem and shows that the DoS is proportional to the square root of energy. Finally, it defines the effective DoS, which accounts for occupancy based on the Fermi-Dirac distribution.
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
The document discusses different configurations and operating modes of bipolar junction transistors (BJTs). It describes the common emitter (CE), common base (CB), and common collector (CC) configurations. For each configuration, it provides expressions for the collector current (IC) and discusses characteristics like current gain, voltage gain, and input/output resistances. It also covers biasing circuits, operating points, transistor regions of operation, and fixed bias, emitter bias, and voltage divider bias configurations.
This document discusses the calculation of the built-in potential in a p-n junction. It covers determining the equilibrium electron and hole concentrations using the Fermi-Dirac distribution and relates them to the built-in potential. It also examines how the extrinsic Fermi level remains constant throughout the p-n junction under equilibrium conditions.
The document discusses the density of states (DoS) for bulk semiconductors and various quantum structures such as quantum wells, wires, and dots. It defines DoS as the number of available energy states per unit energy interval per unit dimension. It then derives expressions for the DoS of bulk semiconductors, quantum wells, quantum wires, and notes that quantum dots have a discrete DoS with delta function peaks.
This document discusses the electrical properties of p-n junctions. It describes abrupt and linearly graded p-n junction profiles and their depletion widths, electric fields, junction potentials, and capacitances. Equations for the depletion capacitance and diffusion capacitance of abrupt and linearly graded p-n junctions are also presented.
This document summarizes lecture material from an Electronic Devices course taught by Arpan Deyasi at RCC Institute of Information Technology in Kolkata, India. The document discusses quasi-Fermi levels, generation and recombination of carriers, and the continuity equation as it relates to excess carriers in semiconductors. Key points include definitions of quasi-Fermi levels for n-type and p-type materials, equations describing generation and recombination rates, and the continuity equation modeling carrier transport and generation/recombination processes in non-uniformly doped semiconductors.
This document summarizes a lecture on quantum wells as a deviation from ideal particle-in-a-box structures. It begins with reviewing the particle-in-a-box model and posing questions about its limitations. It then discusses how quantum wells are physically realized using different material compositions and potential profiles. The key concepts of exciton formation, electron motion in one to three dimensions, and the Schrodinger equation for quantum wells are presented. Finally, it covers two-dimensional electron gases, multiple quantum wells, superlattices, and the difference between the two structures.
This document discusses the bipolar junction transistor. It describes the emitter, collector, and base regions and their doping levels. The current gain parameters alpha and beta are defined as the ratios of various currents. Alpha is approximately 1 due to some carrier recombination and leakage currents. Beta is much greater than 1. Injection, transport, and collection efficiencies are also defined. The document discusses base width modulation and the Early effect where the base width decreases with increasing collector voltage. Punch-through breakdown occurs when the depletion regions merge.
This document discusses semiconductor materials and their properties. It covers elemental and compound semiconductors, including gallium nitride used in LEDs. It describes the band structure of semiconductors including the valence and conduction bands separated by the bandgap. Carrier generation and recombination processes are explained. Intrinsic and extrinsic semiconductors are defined based on their carrier concentrations.
This document discusses optical detectors and receivers. It describes how optical receivers convert optical signals to electrical signals using devices like p-n junction diodes, p-i-n junction diodes, and avalanche photodiodes (APDs). It explains the process of photodetection involving the absorption of photons, generation of electron-hole pairs, transportation of carriers, and collection of photocurrents. It also covers topics like quantum efficiency, internal quantum efficiency, responsivity, and comparisons of p-n junction photodiodes and p-i-n junction photodiodes. APDs are noted as having higher sensitivity due to avalanche gain but also higher operating voltages and non-linear output.
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
The document discusses the absorption coefficient in a quantum well for intraband transitions between energy levels. It presents the formula for absorption coefficient as a function of oscillator strength between levels, doping density, and Lorentzian lineshape. It derives the oscillator strength between the two lowest consecutive states in terms of the quantum well width. The absorption coefficient is then incorporated with a Lorentzian lineshape to better fit practical experimental data.
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
3) A torque is experienced by a dipole when placed in an external electric field, with the torque being proportional to the cross product of the dipole moment and the electric field.
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
1) An overview of Gauss's law, which states that the total outward electric flux through a closed surface is equal to the total charge enclosed divided by the permittivity of the medium.
2) Derivations and proofs of Gauss's law using calculus theorems like divergence theorem.
3) Applications of Gauss's law to problems involving charge distributions and electric field calculations.
4) Discussions of related concepts like Gauss's law in polarized media, current continuity equation, relaxation time, and Poisson's equation.
5) Example problems demonstrating the application of these electromagnetic theory principles.
This document discusses Coulomb's law and some key concepts in electrostatics, including:
- Coulomb's law describes the electrostatic force between two point charges, being directly proportional to the product of the charges and inversely proportional to the square of the distance between them.
- The electric field intensity and electric flux density are introduced.
- Properties of the electric field such as it being irrotational are examined.
- The electrostatic potential is defined and its relationship to the electric field is explored.
This document discusses vector calculus theorems including Stokes' theorem and the divergence theorem. Stokes' theorem relates the line integral of a vector field around a closed curve to the surface integral of the curl of the vector field over any surface bounded by the curve. The divergence theorem relates the volume integral of the divergence of a vector field over a volume to the surface integral of the vector field over the boundary surface of that volume. The document provides proofs of these theorems and examples of their applications to problems involving conservative vector fields and evaluating integrals.
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
Molecular electronics aims to use electronic molecules as passive or active electronic components. It has advantages over silicon technology such as smaller size (1-3 nm vs 14 nm), faster time cycles (1 fs vs 1 ns), and ability to integrate more gates per square centimeter (1013 vs 108). Major challenges include difficulty experimentally verifying and directly characterizing molecular devices and fully integrating them with silicon technology. Potential applications include sensors, display devices, energy transaction devices, smart materials, and molecular-scale logic and memory devices.
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Sri Guru Hargobind Ji - Bandi Chor Guru.pdfBalvir Singh
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• He had a long tenure as Guru, lasting 37 years, 9 months and 3 days
Null Bangalore | Pentesters Approach to AWS IAMDivyanshu
#Abstract:
- Learn more about the real-world methods for auditing AWS IAM (Identity and Access Management) as a pentester. So let us proceed with a brief discussion of IAM as well as some typical misconfigurations and their potential exploits in order to reinforce the understanding of IAM security best practices.
- Gain actionable insights into AWS IAM policies and roles, using hands on approach.
#Prerequisites:
- Basic understanding of AWS services and architecture
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- For hands on lab create account on [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
# Scenario Covered:
- Basics of IAM in AWS
- Implementing IAM Policies with Least Privilege to Manage S3 Bucket
- Objective: Create an S3 bucket with least privilege IAM policy and validate access.
- Steps:
- Create S3 bucket.
- Attach least privilege policy to IAM user.
- Validate access.
- Exploiting IAM PassRole Misconfiguration
-Allows a user to pass a specific IAM role to an AWS service (ec2), typically used for service access delegation. Then exploit PassRole Misconfiguration granting unauthorized access to sensitive resources.
- Objective: Demonstrate how a PassRole misconfiguration can grant unauthorized access.
- Steps:
- Allow user to pass IAM role to EC2.
- Exploit misconfiguration for unauthorized access.
- Access sensitive resources.
- Exploiting IAM AssumeRole Misconfiguration with Overly Permissive Role
- An overly permissive IAM role configuration can lead to privilege escalation by creating a role with administrative privileges and allow a user to assume this role.
- Objective: Show how overly permissive IAM roles can lead to privilege escalation.
- Steps:
- Create role with administrative privileges.
- Allow user to assume the role.
- Perform administrative actions.
- Differentiation between PassRole vs AssumeRole
Try at [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
A high-Speed Communication System is based on the Design of a Bi-NoC Router, ...DharmaBanothu
The Network on Chip (NoC) has emerged as an effective
solution for intercommunication infrastructure within System on
Chip (SoC) designs, overcoming the limitations of traditional
methods that face significant bottlenecks. However, the complexity
of NoC design presents numerous challenges related to
performance metrics such as scalability, latency, power
consumption, and signal integrity. This project addresses the
issues within the router's memory unit and proposes an enhanced
memory structure. To achieve efficient data transfer, FIFO buffers
are implemented in distributed RAM and virtual channels for
FPGA-based NoC. The project introduces advanced FIFO-based
memory units within the NoC router, assessing their performance
in a Bi-directional NoC (Bi-NoC) configuration. The primary
objective is to reduce the router's workload while enhancing the
FIFO internal structure. To further improve data transfer speed,
a Bi-NoC with a self-configurable intercommunication channel is
suggested. Simulation and synthesis results demonstrate
guaranteed throughput, predictable latency, and equitable
network access, showing significant improvement over previous
designs
Build the Next Generation of Apps with the Einstein 1 Platform.
Rejoignez Philippe Ozil pour une session de workshops qui vous guidera à travers les détails de la plateforme Einstein 1, l'importance des données pour la création d'applications d'intelligence artificielle et les différents outils et technologies que Salesforce propose pour vous apporter tous les bénéfices de l'IA.
Blood finder application project report (1).pdfKamal Acharya
Blood Finder is an emergency time app where a user can search for the blood banks as
well as the registered blood donors around Mumbai. This application also provide an
opportunity for the user of this application to become a registered donor for this user have
to enroll for the donor request from the application itself. If the admin wish to make user
a registered donor, with some of the formalities with the organization it can be done.
Specialization of this application is that the user will not have to register on sign-in for
searching the blood banks and blood donors it can be just done by installing the
application to the mobile.
The purpose of making this application is to save the user’s time for searching blood of
needed blood group during the time of the emergency.
This is an android application developed in Java and XML with the connectivity of
SQLite database. This application will provide most of basic functionality required for an
emergency time application. All the details of Blood banks and Blood donors are stored
in the database i.e. SQLite.
This application allowed the user to get all the information regarding blood banks and
blood donors such as Name, Number, Address, Blood Group, rather than searching it on
the different websites and wasting the precious time. This application is effective and
user friendly.
This presentation is about Food Delivery Systems and how they are developed using the Software Development Life Cycle (SDLC) and other methods. It explains the steps involved in creating a food delivery app, from planning and designing to testing and launching. The slide also covers different tools and technologies used to make these systems work efficiently.
Built-in potential and extrinsic Fermi level in p-n junction diode
1. Course: Electronic Devices
paper code: EC301
Course Coordinator: Arpan Deyasi
Department of Electronics and Communication Engineering
RCC Institute of Information Technology
Kolkata, India
8/21/2020 1Arpan Deyasi, RCCIIT, India
Topic: [i] Built-in potential
[ii] Nature of extrinsic Fermi level in p-n junction
2. Calculation of built-in potential
EF
EV
EC
EFI
qΦFp
qΦFn
Vbi
8/21/2020 2Arpan Deyasi, RCCIIT, India
3. Calculation of built-in potential
Equilibrium electron concentration
0 exp F FI
i
E E
n n
kT
−
=
0 exp Fn
i
q
n n
kT
φ
=
8/21/2020 3Arpan Deyasi, RCCIIT, India
4. 0
lnFn
i
nkT
q n
φ
=
Calculation of built-in potential
ln D
Fn
i
kT N
q n
φ
=
8/21/2020 4Arpan Deyasi, RCCIIT, India
5. Calculation of built-in potential
Equilibrium hole concentration
0 exp FI F
i
E E
p n
kT
−
=
0 exp
Fp
i
q
p n
kT
φ
=
8/21/2020 5Arpan Deyasi, RCCIIT, India
6. Calculation of built-in potential
0
lnFp
i
pkT
q n
φ
=
ln A
Fp
i
kT N
q n
φ
=
8/21/2020 6Arpan Deyasi, RCCIIT, India
7. Calculation of built-in potential
bi Fn FpV φ φ= +
ln lnD A
bi
i i
kT N kT N
V
q n q n
+
8/21/2020 7Arpan Deyasi, RCCIIT, India
8. ln lnD A
bi
i i
kT N N
V
q n n
+
Calculation of built-in potential
2
ln D A
bi
i
kT N N
V
q n
=
8/21/2020 8Arpan Deyasi, RCCIIT, India
9. Extrinsic Fermi Level is constant
8/21/2020 9Arpan Deyasi, RCCIIT, India
We consider p-n junction under external bias
0pJ =
Under equilibrium
0
0 0p z p
dp
qp E qD
dz
µ − =
10. 8/21/2020 10Arpan Deyasi, RCCIIT, India
0
0 p z p
dp
p E D
dz
µ =
Extrinsic Fermi Level is constant
0
0
p
z
p
D dp
p E
dzµ
=
11. 8/21/2020 Arpan Deyasi, RCCIIT, India 11
Extrinsic Fermi Level is constant
0
0 z
dpkT
p E
q dz
=
0 exp FI F
i
E E
p n
kT
−
=
12. 8/21/2020 Arpan Deyasi, RCCIIT, India 12
0
expi FI F
FI F
dp n E E
dz kT kT
dE dE
dz dz
−
=
× −
Extrinsic Fermi Level is constant
0
0 z
dpkT
p E
q dz
=
13. 8/21/2020 Arpan Deyasi, RCCIIT, India 13
Extrinsic Fermi Level is constant
z
dV
E
dz
= −
FI
z
d E
E
dz q
=− −
1 FI
z
dE
E
q dz
=
0
0 z
dpkT
p E
q dz
=
14. 8/21/2020 Arpan Deyasi, RCCIIT, India 14
Extrinsic Fermi Level is constant
1
exp
exp
FI F FI
i
i FI F FI F
E E dE
n
kT q dz
nkT E E dE dE
q kT kT dz dz
−
× =
−
× × −
15. 8/21/2020 Arpan Deyasi, RCCIIT, India 15
FI FI FdE dE dE
dz dz dz
= −
Extrinsic Fermi Level is constant
0FdE
dz
=