Foundation of MOS Capacitor
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This document discusses the MOS capacitor structure. It begins by defining the key components of a MOS capacitor as a semiconductor substrate, insulating oxide layer, and conducting metal layer. The document then examines the band diagram of an n-type silicon MOS capacitor at zero bias. It explains how applying a positive or negative bias to the metal layer can cause the band diagram to deviate, resulting in accumulation, depletion, or inversion at the silicon surface. Key relationships between the metal and silicon surface potentials are also defined for a p-type silicon MOS capacitor under varying bias conditions.
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This document discusses corrosion in oil and gas pipelines. It identifies some key causes of corrosion as acid concentration, temperature, and presence of water and chemicals like CO2 and H2S. Internal corrosion is a major problem and can occur due to water, sediments, CO2, and H2S accumulating on the inner pipe surface. Corrosion causes damage through metal loss, weakening of pipe integrity, and environmental damage from oil spills. Proper material selection and corrosion protection methods are needed to control corrosion in pipelines and reduce economic and safety impacts.
IRJET- Effect of Trace Addition SB and NA in Al-Si Alloy
This document summarizes research on modifying an Al-Si alloy by adding trace amounts of sodium (Na) and antimony (Sb). The researchers prepared Al-Si alloy samples with different weight compositions of Na and Sb added as modifiers. They analyzed the microstructure, hardness, and tensile strength of the modified alloys compared to an unmodified Al-Si alloy. Their results showed that higher Sb content and lower Na content led to finer eutectic silicon particles and improved mechanical properties. Specifically, a composition of 0.02% Na and 0.3% Sb produced the smallest and most uniformly distributed eutectic particles, enhancing the alloy's strength. In conclusion, modifying the Al-Si alloy with
Presentation Ai Ch E 2009
This document summarizes research on developing silicon nanowire composite anodes for lithium-ion batteries. It describes a new method for fabricating silicon nanowires using electroless etching, which does not require vacuum processing. The nanowires are then mixed with graphite and tested as an anode material. Results show the composite anode delivers over twice the capacity of graphite alone, with only 15% silicon content, as the nanowire structure accommodates silicon's large volume changes during charging and discharging. This represents a low-cost solution for increasing lithium-ion battery capacity using facile fabrication methods.
Oxidation
This document discusses oxidation in semiconductor device fabrication. It describes oxidation as the process of converting silicon into silicon dioxide, which can occur through dry oxidation using oxygen or wet oxidation using water/steam at high temperatures from 900-1200°C. The key functions of the resulting silicon dioxide layer include acting as a diffusion mask, providing surface passivation and insulation, and enabling device isolation in integrated circuits. The document also classifies oxidation as either diffusion limited or reaction controlled depending on oxide thickness and oxidation time.
Pidaparthy 2021 j._electrochem._soc._168_100509
This document summarizes a study that characterized graphite anodes from lithium-ion battery cells after fast charging. Multi-scale characterization techniques revealed increased disorder near the edges of graphite particles in anodes that experienced lithium plating during fast charging. Specifically, transmission electron microscopy showed wavy graphite fringes and higher d-spacings near particle edges, indicating greater lattice disorder extending 20 nm into the bulk. This disorder hinders lithium ion intercalation and favors lithium plating during repeated fast charging. Scanning electron microscopy also showed fast-charged anodes were thicker due to accumulated electrolyte reduction products in pores.
IRJET - Tribological Characteristics of Al-SIC-MOS2 Cylindrical Powder Prefor...
The document summarizes the tribological characteristics of Al-SiC-MoS2 cylindrical powder preforms under dry atmospheric conditions. It discusses conducting wear tests using a pin-on-disc apparatus against silicon carbide abrasive paper under various testing conditions such as applied load, sliding velocity, and time. The wear is measured by weight loss and the relationship between weight loss and applied load is established. Materials used include aluminum, silicon carbide, and molybdenum disulfide powder preforms compacted at different pressures and sintered at one temperature.
IRJET - Advances in Perovskite Solar Cells
This document summarizes recent advances in perovskite solar cells. It discusses how perovskite solar cell efficiency has rapidly increased from 3.8% in 2009 to over 24.2% today, catching up to silicon solar cells. The stability of perovskite structures depends on factors like ionicity and tolerance factor. While perovskite solar cells still face stability issues with water and temperature, encapsulation and tandem cell designs with silicon are helping to address this. Research is ongoing to improve materials, device architectures and manufacturing techniques to further increase efficiency and commercial viability of these promising thin film solar cells.
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Scaling in conventional MOSFET for constant electric field and constant voltage
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Scaling in conventional MOSFETCarrier scattering and ballistic transport
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
Electromagnetic Wave Propagations
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
Biot-Savart law
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
Ampere's circuital law
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
Magnetic Potentials
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
Reflection and Transmission coefficients in transmission line
Reflection and Transmission coefficients in transmission lineRCC Institute of Information Technology
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.Impedance in transmission line
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Distortionless Transmission Line
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Quantum Hall Effect
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
Telegrapher's Equation
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
Dielectrics
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
Capacitor
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Electrical Properties of Dipole
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Fundamentals of Gauss' Law
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
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Fundamentals of Coulomb's Law
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Vector Integration
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Scalar and vector differentiation
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
Coordinate transformation
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
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DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODEL
As digital technology becomes more deeply embedded in power systems, protecting the communication
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of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
solve this issue, this paper develops a hybrid Deep Learning (DL) model specifically designed for intrusion
detection in smart grids. The proposed approach is a combination of the Convolutional Neural Network
(CNN) and the Long-Short-Term Memory algorithms (LSTM). We employed a recent intrusion detection
dataset (DNP3), which focuses on unauthorized commands and Denial of Service (DoS) cyberattacks, to
train and test our model. The results of our experiments show that our CNN-LSTM method is much better
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accuracy rate of 99.50%.
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countries. Healthcare is evolving significantly, with varied objectives across nations aiming to improve
population health. The study explores stakeholders' perceptions on critical success factors, identifying
challenges such as insufficiently trained personnel, organizational silos, and structural barriers to data
exchange. Facilitators for integration include cost reduction initiatives and interoperability policies.
Technologies like IoT, Big Data, AI, Machine Learning, and robotics enhance diagnostics, treatment
precision, and real-time monitoring, reducing errors and optimizing resource utilization. Automation
improves employee satisfaction and patient care, while Blockchain and telemedicine drive cost reductions.
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Foundation of MOS Capacitor
- 1. MOS Capacitor Arpan Deyasi Dept of ECE, RCCIIT, Kolkata, India 11/3/2020 1Arpan Deyasi, RCCIIT, India
- 2. 11/3/2020 Arpan Deyasi, RCCIIT, India 2 Are MOS & MOSFET are same? No Let’s make the journey to the world of MOS
- 3. 11/3/2020 Arpan Deyasi, RCCIIT, India 3 Substrate Insulator material Conducting Layer Consider a semiconducting substrate Formation of MIS structure Grow insulating material on top of the substrate Make a metal layer deposition on the insulating layer Apply bias on the two contact layers
- 4. 11/3/2020 Arpan Deyasi, RCCIIT, India 4 MIS MOS Semiconductor substrate Oxide Conducting Layer Insulating layer will be the oxide layer Convention: Conducting layer: Metal (Al) Insulating layer: Oxide (SiO2) Substrate layer: Semiconductor (Si)
- 5. 11/3/2020 Arpan Deyasi, RCCIIT, India 5 To understand its electronic properties, we need to understand it’s band diagram Since it is a heterostructure, we have to consider vacuum level as the reference level Q: What is heterostructure?
- 6. 11/3/2020 6 Need to brush up with Band Structure? Work Function (Φs) Electron Affinity (χs) Arpan Deyasi, RCCIIT, India
- 7. 11/3/2020 Arpan Deyasi, RCCIIT, India 7 Band Diagram of MOS [Al-SiO2-Si(n)] EFm χ = 4.25 eV ECI χ = 0.9 eV EVI Eg = 8.76 eV ECS EVS Eg = 1.12 eV χ = 4.05 eV EFS ΦF E0 (Al) (SiO2) (Si)
- 8. 11/3/2020 Arpan Deyasi, RCCIIT, India 8 This is the band diagram at unbiased condition Q. If bias is applied, how the band diagram will be deviated?
- 9. 11/3/2020 Arpan Deyasi, RCCIIT, India 9 Application of bias in MOS Structure 1. Positive bias at metal side 2. Negative bias at metal side
- 10. 11/3/2020 Arpan Deyasi, RCCIIT, India 10 Property of semiconductor will play a vital role [i] Al-SiO2-Si(n) [ii] Al-SiO2-Si(p) 1. Positive bias at metal side 1. Positive bias at metal side 2. Negative bias at metal side 2. Negative bias at metal side
- 11. 11/3/2020 Arpan Deyasi, RCCIIT, India 11 Al-SiO2-Si(p) under different biasing conditions Al SiO2 Si VM < 0 Al SiO2 Si ΦAl ΦSi Ec EV EFP Ei χSiO2 χSi Ec EV EFP Ei Accumulation ΨF ΨS
- 12. 11/3/2020 Arpan Deyasi, RCCIIT, India 12 Al-SiO2-Si(p) under different biasing conditions Al SiO2 Si ΦAl ΦSi Ec EV EFP Ei χSiO2 χSi Al SiO2 Si VM>0 & small Ec EV EFP Ei Depletion ΨF ΨS
- 13. 11/3/2020 Arpan Deyasi, RCCIIT, India 13 Al-SiO2-Si(p) under different biasing conditions Ec EV EFP Ei Al SiO2 Si VM>0 & small Depletion VM>0 & large Al SiO2 Si 1 2 point of inversion 3 Inversion ΨF ΨS
- 14. 11/3/2020 Arpan Deyasi, RCCIIT, India 14 Relation between ΨS & ΨF for Al-SiO2-Si(p) Accumulation: ΨS < ΨF & ΨS <0 Depletion: ΨS < ΨF Point of Inversion: ΨS = ΨF Inversion: ΨS > ΨF
- 15. 11/3/2020 Arpan Deyasi, RCCIIT, India 15 Bending of band for Al-SiO2-Si(p) Accumulation: upward bending Depletion: Downward bending (EFp does not cross EFi) Point of Inversion: Downward bending (Efp touches Efi) Inversion: Downward bending (EFp crosses EFi)