This document discusses different biasing configurations for field-effect transistors (FETs) including fixed bias, self bias, and voltage divider bias. It provides the key relationships for analyzing each configuration graphically or mathematically. Fixed bias uses two supplies with the gate-source voltage (VGS) fixed. Self bias uses a single supply with VGS determined by the drain current and source resistor. Voltage divider bias also uses a single supply but VGS is defined by the voltage divider and drain current. The document also covers a common-gate configuration and derives the small signal model for a JFET.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
Mosfet
MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful.
There are 2 types:
• Depletion-Type MOSFET
• Enhancement-Type MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
Mosfet
MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful.
There are 2 types:
• Depletion-Type MOSFET
• Enhancement-Type MOSFET
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
Enhancement type Metal Oxide Semiconductor Field Effect Transistor, Basic Operation, Drain Characteristics, Transfer Characteristics, Regions of Operation
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
Enhancement type Metal Oxide Semiconductor Field Effect Transistor, Basic Operation, Drain Characteristics, Transfer Characteristics, Regions of Operation
Prepare A ppt
Topic: Resistance Welding Contentts of the presentation ppt
1, Introduction definition and type
2,Mechanism, schematically
3,processparameters and control
4,Materials and applications
5,Advantage and challenge
Title: Resistance Welding: Process, Parameters, and Applications
Slide 1: Introduction
- Definition: Resistance welding is a process that generates heat through the resistance of metal to the localized flow of electric current[3].
- Types: Resistance Spot Welding (RSW), Resistance Seam Welding (RSEW), Resistance Projection Welding (PW or RPW), High Frequency Resistance Welding (HFRW), Percussion Welding (PEW), and Stud Welding (SW)[1].
Slide 2: Mechanism
- The resistance of metal to the localized flow of current produces heat[3].
- Process variables: Current, time, and force[3].
- Electrodes: Copper base materials, divided into classes. Truncated cone, dome point, and pointed electrodes[3].
Slide 3: Process Parameters and Control
- Operating window: Lobe curve, constant electrode force, acceptable nugget size, time (cycles of current), nugget too small, expulsion, current (1000’s of amperes), roll spot weld, overlapping seam weld, and continuous seam weld[3].
- Electrode tips wear during service, causing nugget size to decrease[3].
Slide 4: Materials and Applications
- High speed, < 0.1 seconds in automotive spot welds[3].
- Excellent for sheet metal applications, < ¼-inch[3].
- No filler metal process, suitable for joining similar and dissimilar metals[3][4].
- Common applications: Automobile, aircraft, machinery manufacturing, and structural/ship building[5].
Slide 5: Advantages and Challenges
- Advantages: High production rates, no filler metal required, lends itself to mechanization and automation, lower operator skill, and high production rates possible[4].
- Challenges: Higher equipment costs than arc welding, power line demands, nondestructive testing, low tensile and fatigue strength, not portable, electrode wear, and lap joint requires additional metal[3].
Citations:
[1] Resistance Welding PowerPoint Presentation, free download https://www.slideserve.com/chapa/resistance-welding
[2] Resistance welding | PPT - SlideShare https://www.slideshare.net/slideshow/resistance-welding-91956561/91956561
[3] Resistance Welding PowerPoint Presentation, free download https://www.slideserve.com/shanae/resistance-welding
[4] WELDING PROCESSES Arc Welding Resistance Welding Oxyfuel Gas ... https://slideplayer.com/slide/5702123/
[5] PPT PRESENTATION OF WELDING - SlideShare https://www.slideshare.net/SurendraKumarDewanga/ppt-presentation-of-welding
This is a classroom presentation for the basic concepts of HDL, using Verilog as the programming language. Module 2 deals with simulation and synthesis in Verilog.
This is a classroom presentation for the basic concepts of HDL, using Verilog as the programming language. Module 3 deals with programmable logic devices.
This is a slideshow depicting the importance of guru in the spiritual life. And in addition, about the practice of Gaayathree manthra and its specialties.
This is a slide-show containing the names of all the literary works written by Adi Shankaracharya. The last slide contains the summary of his greatest contributions.
An introduction to the practice of Ashtangayoga, with some prerequisites and attitudinal changes, concluding with some valid health tips and lifestyle changes.
Preparation to yogic breathing as well as some popular methods of yogic breathing (pranayama) are mentioned here, along with some additional health tips.
These slides are with less text and more pictures, with each slide sequentially related to the next one in an intuitive way, and hence the viewer should follow his/her intuitive skills in order to comprehend the flow. The truth is one, ultimately.
TECHNICAL TRAINING MANUAL GENERAL FAMILIARIZATION COURSEDuvanRamosGarzon1
AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
COLLEGE BUS MANAGEMENT SYSTEM PROJECT REPORT.pdfKamal Acharya
The College Bus Management system is completely developed by Visual Basic .NET Version. The application is connect with most secured database language MS SQL Server. The application is develop by using best combination of front-end and back-end languages. The application is totally design like flat user interface. This flat user interface is more attractive user interface in 2017. The application is gives more important to the system functionality. The application is to manage the student’s details, driver’s details, bus details, bus route details, bus fees details and more. The application has only one unit for admin. The admin can manage the entire application. The admin can login into the application by using username and password of the admin. The application is develop for big and small colleges. It is more user friendly for non-computer person. Even they can easily learn how to manage the application within hours. The application is more secure by the admin. The system will give an effective output for the VB.Net and SQL Server given as input to the system. The compiled java program given as input to the system, after scanning the program will generate different reports. The application generates the report for users. The admin can view and download the report of the data. The application deliver the excel format reports. Because, excel formatted reports is very easy to understand the income and expense of the college bus. This application is mainly develop for windows operating system users. In 2017, 73% of people enterprises are using windows operating system. So the application will easily install for all the windows operating system users. The application-developed size is very low. The application consumes very low space in disk. Therefore, the user can allocate very minimum local disk space for this application.
Forklift Classes Overview by Intella PartsIntella Parts
Discover the different forklift classes and their specific applications. Learn how to choose the right forklift for your needs to ensure safety, efficiency, and compliance in your operations.
For more technical information, visit our website https://intellaparts.com
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
2. INTRODUCTION
• For the field-effect transistor, the relationship between input and output
quantities is nonlinear due to the squared term in Shockley’s equation.
• The nonlinear relationship between ID and VGS can complicate the mathematical
approach to the dc analysis of FET configurations.
• A graphical approach may limit solutions in accuracy, but it is a quicker method
for most FET amplifiers. We use graphical solutions rather than mathematical
solutions, as the formers are easier.
3. • The general relationships that can be applied to the dc analysis of all
FET amplifiers are:
• For JFETs, Shockley’s equation is applied to relate the input and
output quantities:
5. • Fixed bias configuration can be
solved just as directly using either a
mathematical or a graphical
approach.
• The coupling capacitors are “open
circuits” for the dc analysis.
• The resistor RG is present to ensure
that Vi appears at the input, to the
FET amplifier for the ac analysis.
6. • For the dc analysis,
• The zero-volt drop across RG permits
replacing RG by a short-circuit
equivalent, as appearing in the network.
• Applying KVL,
8. GRAPHICAL ANALYSIS
• A graphical analysis would require a plot of
Shockley’s equation.
• The fixed level of VGS has been superimposed
as a vertical line at VGSQ = -VGG.
• At any point on the vertical line, the level of
VGS is (–VGG.)
• The point where the two curves intersect is
commonly referred to as the quiescent or
operating point.
9. Ex:1) Determine the following for the network:
a)VGSQ b)IDQ c)VDS d)VD e)VG f)VS
12. • The self-bias configuration
eliminates the need for two
dc supplies. An additional
resistor is introduced at
the source terminal, for the
stability of the Q-point.
• The controlling gate-to-
source voltage is now
determined by the voltage
across the resistor RS
introduced in the self-bias
configuration, as shown.
13. • For the dc analysis, the capacitors can again be
replaced by “open circuits” and the resistor RG
replaced by a “short-circuit”, since IG = 0 A.
• The current through RS is the source current IS;
but IS = ID and VRS = ID.RS
• Applying KVL,
14. • In case of self bias, unlike fixed bias, VGS is a function of the
output current ID, and is not fixed in magnitude.
• A mathematical solution could be obtained by substituting VGS
into Shockley’s equation as follows:
This results in a quadratic equation, which can be solved for obtaining ID.
16. Graphical Solution
• The graphical approach requires that we first
establish the device transfer characteristics.
• Equation VGS = -ID.RS defines a straight line on the
same graph.
• To Identify the two points to draw the line, apply
ID=0 A, which gives, VGS = -ID.RS = (0)RS = 0 V.
• The second point requires that a level of VGS or ID
be chosen. we choose a level of ID equal to one-half
the saturation level.
17. Ex:2) Determine the following for the network, using the graphical method:
a)VGSQ b)IDQ c)VDS d)VS e)VG f)VD
From the given values of IDSS and VP, the characteristic curve can be plotted, as shown.
Further, the gate-to-source voltage is determined by, VGS = -IDRS . For ID = 4 mA, VGS = -4V.
From this value, a straight line can be drawn, as shown:
18. a) The resulting operating point results in a
quiescent value, VGSQ = -2.6 V.
b) At the Q-point, IDQ = 2.6 mA.
c)
d)
e) VG = 0 V.
f)
20. • The circuit is similar to that of BJT.
As that of self-bias, graphical analysis
is preferred here, as the mathematical
analysis is more complicated.
• For DC Analysis:
• All the capacitors, including the
bypass capacitor CS , have to be
replaced by an “open circuit”
equivalent.
• VDD can be separated into two
equivalent voltage sources, to
permit a further separation of the
input and output regions of the
network.
21. • Since IG = 0 A, Applying KCL, we have IR1 = IR2.
• Using voltage-divider rule, the voltage VG is given by,
• Appling KVL,
• Substituting VRS = IS.RS = ID.RS,
• Equation of VGS is still the equation for a straight line,
but the origin is no longer a point in the plot of the line.
• The quantities VG and RS are fixed by the network
construction. Substituting for VGS in Shockley’s equation,
the expression for ID is obtained as,
22. Graphical Solution
• Since any straight line requires two
points to be defined, anywhere on
horizontal axis ID=0, yielding-
• For the other point, let us substitute
VGS=0, and solve for the value of ID -
23. Increasing the
values of RS
results in lower
quiescent values
of ID and declining
values of VGS.
Applying KVL,
24. Ex:3) Determine the following for the network:
a)VGSQ b)IDQ c)VD d)VS e)VDS f)VGD
25. a) From Graph:
IDQ = 2.4 mA and VGSQ = -1.8 V
b) VD = VDD - IDRD
= 16 V - (2.4 mA)(2.4 k)
= 10.24 V
c) VS = IDRS = (2.4 mA)(1.5 k)
= 3.6 V
d) VDS = VDD - ID(RD + RS)
= 16 V - (2.4 mA)(2.4 k + 1.5 k)
= 6.64 V
e) VGD = VG - VD
= 1.82 V - 10.24 V
= -8.42 V
Biasing type Value for
VGS
Line of
VGS
Fixed bias
(2 supplies)
-VGG
Vertical line
Self bias
(single VDD)
- IDRS
Slant line that
passes through
the origin
Voltage-
divider bias
(single VDD)
VG - IDRS
Slant line does
not pass thru’
the origin
27. • In this configuration, the gate terminal is
grounded, and typically, the input signal is
applied to the source terminal, and the output
signal is obtained at the drain terminal.
• Applying KVL,
• Applying the condition, ID = 0 mA,
• Applying the condition, VGS = 0 V,
29. Ex:4) Determine the following for the common-gate configuration:
a) VGSQ b) IDQ c) VD d) VG e) VS f) VDS
For the transfer characteristics,
For this equation, the origin is one point on the load
line while the other point must be determined at some
other arbitrary point.
Choosing ID = 6 mA,
The resulting solution is:
a) VGSQ = -2.6 V
b) IDQ = 3.8 mA