Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both holes and electrons to conduct current. There are two types, NPN and PNP, which are constructed from alternating layers of N-type and P-type semiconductor material. BJTs can be used as amplifiers and switches by applying forward or reverse bias to the base-emitter and base-collector junctions. Key parameters specified in datasheets include maximum voltage, current, power dissipation, and current gain (beta). Proper biasing is required to operate the BJT in its active region for amplification applications.
PN junction diode –structure, operation and V-I characteristics, diffusion and transient capacitance - Rectifiers – Half Wave and Full Wave Rectifier,– Display devices- LED, Laser diodes- Zener diodecharacteristics-Zener Reverse characteristics – Zener as regulator,TRANSISTORS, BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT Structure and characteristics,BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response –
MOSFET small signal model– Analysis of CS and Source follower – Gain and frequency response- High frequency analysis,BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode analysis – FET input stages – Single tuned amplifiers – Gain and frequency response – Neutralization methods, power amplifiers –Types (Qualitative analysis),Advantages of negative feedback – voltage / current, series , Shunt feedback –positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal oscillators.
PN junction diode –structure, operation and V-I characteristics, diffusion and transient capacitance - Rectifiers – Half Wave and Full Wave Rectifier,– Display devices- LED, Laser diodes- Zener diodecharacteristics-Zener Reverse characteristics – Zener as regulator,TRANSISTORS, BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT Structure and characteristics,BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response –
MOSFET small signal model– Analysis of CS and Source follower – Gain and frequency response- High frequency analysis,BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode analysis – FET input stages – Single tuned amplifiers – Gain and frequency response – Neutralization methods, power amplifiers –Types (Qualitative analysis),Advantages of negative feedback – voltage / current, series , Shunt feedback –positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal oscillators.
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
The performance obtainable from a single-stage amplifier is often insufficient for many applications, hence several stages may be combined forming a multistage amplifier. These stages are connected in cascade, i.e. output of the first stage is connected to form input of second stage, whose output becomes input of third stage, and so on.
thank u
Hansraj MEENA
The presentation covers Bipolar Junction Transistor: Construction, Operation, Transistor configurations and input / output characteristics; Common Base, Common Emitter, and Common Collector
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
The performance obtainable from a single-stage amplifier is often insufficient for many applications, hence several stages may be combined forming a multistage amplifier. These stages are connected in cascade, i.e. output of the first stage is connected to form input of second stage, whose output becomes input of third stage, and so on.
thank u
Hansraj MEENA
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
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Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
2. Introduction
• The basic of electronic system nowadays is
semiconductor device.
• The famous and commonly use of this device
is BJTs
(Bipolar Junction Transistors).
• It can be use as amplifier and logic switches.
• BJT consists of three terminal:
collector : C
base : B
emitter : E
• Two types of BJT : pnp and npn
3. Transistor Construction
• 3 layer semiconductor device consisting:
• 2 n- and 1 p-type layers of material npn transistor
• 2 p- and 1 n-type layers of material pnp transistor
• The term bipolar reflects the fact that holes and
electrons participate in the injection process into the
oppositely polarized material
• A single pn junction has two different types of bias:
• forward bias
• reverse bias
• Thus, a two-pn-junction device has four types of bias.
4. Position of the terminals and symbol
of BJT.
• Base is located at the middle
and more thin from the level
of collector and emitter
• The emitter and collector
terminals are made of the
same type of semiconductor
material, while the base of the
other type of material
5. Transistor currents
-The arrow is always drawn
on the emitter
-The arrow always point
toward the n-type
-The arrow indicates the
direction of the emitter
current:
pnp:E B
npn: B E
IC=the collector current
IB= the base current
IE= the emitter current
6. • By imaging the analogy of diode, transistor can be
construct like two diodes that connetecd together.
• It can be conclude that the work of transistor is base on
work of diode.
7. Transistor Operation
• The basic operation will be described using the pnp
transistor. The operation of the pnp transistor is
exactly the same if the roles played by the electron
and hole are interchanged.
• One p-n junction of a transistor is reverse-biased,
whereas the other is forward-biased.
Forward-biased junction
of a pnp transistor
Reverse-biased junction
of a pnp transistor
8. • Both biasing potentials have been applied to a pnp
transistor and resulting majority and minority carrier
flows indicated.
• Majority carriers (+) will diffuse across the forward-
biased p-n junction into the n-type material.
• A very small number of carriers (+) will through n-type
material to the base terminal. Resulting IB is typically in
order of microamperes.
• The large number of majority carriers will diffuse across
the reverse-biased junction into the p-type material
connected to the collector terminal.
9. • Majority carriers can cross the reverse-biased
junction because the injected majority carriers will
appear as minority carriers in the n-type material.
• Applying KCL to the transistor :
IE = IC + IB
• The comprises of two components – the majority
and minority carriers
IC = ICmajority + ICOminority
• ICO – IC current with emitter terminal open and is
called leakage current.
10. Common-Base Configuration
• Common-base terminology is derived from the fact that
the :
- base is common to both input and output of the
configuration.
- base is usually the terminal closest to or at
ground potential.
• All current directions will refer to conventional (hole)
flow and the arrows in all electronic symbols have a
direction defined by this convention.
• Note that the applied biasing (voltage sources) are such
as to establish current in the direction indicated for each
branch.
11.
12. • To describe the behavior of common-base amplifiers
requires two set of characteristics:
- Input or driving point characteristics.
- Output or collector characteristics
• The output characteristics has 3 basic regions:
- Active region –defined by the biasing arrangements
- Cutoff region – region where the collector current is 0A
- Saturation region- region of the characteristics to the left
of VCB = 0V
13.
14. • The curves (output characteristics) clearly indicate
that a first approximation to the relationship between
IE and IC in the active region is given by
IC ≈IE
• Once a transistor is in the ‘on’ state, the base-emitter
voltage will be assumed to be
VBE = 0.7V
15. • In the dc mode the level of IC and IE due to the
majority carriers are related by a quantity called
alpha
=
IC = IE + ICBO
• It can then be summarize to IC = IE (ignore ICBO due
to small value)
• For ac situations where the point of operation moves
on the characteristics curve, an ac alpha defined by
• Alpha a common base current gain factor that shows
the efficiency by calculating the current percent from
current flow from emitter to collector.The value of
is typical from 0.9 ~ 0.998.
E
C
I
I
E
C
I
I
19. Common-Emitter Configuration
• It is called common-emitter configuration since :
- emitter is common or reference to both input and
output terminals.
- emitter is usually the terminal closest to or at
ground
potential.
• Almost amplifier design is using connection of CE due
to the high gain for current and voltage.
• Two set of characteristics are necessary to describe
the behavior for CE ;input (base terminal) and output
(collector terminal) parameters.
21. Input characteristics for a
common-emitter NPN transistor
• IB is microamperes compared
to miliamperes of IC.
• IB will flow when VBE > 0.7V
for silicon and 0.3V for
germanium
• Before this value IB is very
small and no IB.
• Base-emitter junction is
forward bias
• Increasing VCE will reduce IB
for different values.
22. Output characteristics for a
common-emitter npn
transistor
• For small VCE (VCE < VCESAT, IC increase linearly with
increasing of VCE
• VCE > VCESAT IC not totally depends on VCE constant IC
• IB(uA) is very small compare to IC (mA). Small increase in
IB cause big increase in IC
• IB=0 A ICEO occur.
• Noticing the value when IC=0A. There is still some value of
current flows.
23.
24. Beta () or amplification factor
• The ratio of dc collector current (IC) to the dc base current
(IB) is dc beta (dc ) which is dc current gain where IC
and IB are determined at a particular operating point, Q-
point (quiescent point).
• It’s define by the following equation:
30 < dc < 300 2N3904
• On data sheet, dc=hFE with h is derived from ac hybrid
equivalent cct. FE are derived from forward-current
amplification and common-emitter configuration
respectively.
25. • For ac conditions an ac beta has been defined as the
changes of collector current (IC) compared to the
changes of base current (IB) where IC and IB are
determined at operating point.
• On data sheet, ac=hfe
• It can defined by the following equation:
30. Common – Collector Configuration
• Also called emitter-follower (EF).
• It is called common-emitter configuration since both the
signal source and the load share the collector terminal
as a common connection point.
• The output voltage is obtained at emitter terminal.
• The input characteristic of common-collector
configuration is similar with common-emitter.
configuration.
• Common-collector circuit configuration is provided with
the load resistor connected from emitter to ground.
• It is used primarily for impedance-matching purpose
since it has high input impedance and low output
impedance.
31. Notation and symbols used with the common-collector configuration:
(a) pnp transistor ; (b) npn transistor.
32. • For the common-collector configuration, the output
characteristics are a plot of IE vs VCE for a range of values of
IB.
33. Limits of Operation
• Many BJT transistor used as an amplifier. Thus it is
important to notice the limits of operations.
• At least 3 maximum values is mentioned in data sheet.
• There are:
a) Maximum power dissipation at collector: PCmax
or PD
b) Maximum collector-emitter voltage: VCEmax
sometimes named as VBR(CEO) or VCEO.
c) Maximum collector current: ICmax
• There are few rules that need to be followed for BJT
transistor used as an amplifier. The rules are:
i) transistor need to be operate in active region!
ii) IC < ICmax
ii) PC < PCmax
34. Note: VCE is at maximum and IC is at minimum (ICmax=ICEO) in the
cutoff region. IC is at maximum and VCE is at minimum
(VCE max = VCEsat = VCEO) in the saturation region. The transistor
operates in the active region between saturation and cutoff.
35. Refer to the fig.
Step1:
The maximum collector
power dissipation,
PD=ICmax x VCEmax (1)
= 18m x 20 = 360 mW
Step 2:
At any point on the
characteristics the product of
and must be equal to 360 mW.
Ex. 1. If choose ICmax= 5 mA,
subtitute into the (1), we get
VCEmaxICmax= 360 mW
VCEmax(5 m)=360/5=7.2 V
Ex.2. If choose VCEmax=18 V,
subtitute into (1), we get
VCEmaxICmax= 360 mW
(10) ICmax=360m/18=20 mA
36. Derating PDmax
• PDmax is usually specified at 25°C.
• The higher temperature goes, the less is PDmax
• Example;
• A derating factor of 2mW/°C indicates the power
dissipation is reduced 2mW each degree centigrade
increase of temperature.
37. Example
Transistor 2N3904 used in the circuit with
VCE=20 V. This circuit used at temperature
1250C. Calculate the new maximum IC.
Transistor 2N3904 have maximum power
dissipation is 625 mW. Derating factor is
5mW/0C.
38. Solution
• Step 1:
Temperature increase : 1250C – 250C = 1000C
• Step 2:
Derate transistor : 5 mW/0C x 1000C = 500 mW
• Step 3:
Maximum power dissipation at 1250C = 625 mW–500
mW=125 mW.
• Step 4:
Thus ICmax = PCmax / VCE=125m/20 = 6.25 mA.
• Step 5:
Draw the new line of power dissipation at 1250C .
39. Example
The parameters of transistor 2N3055 as follows:
- Maximum power dissipation @ 250C=115 W
- Derate factor=0.66 mW/0C.
This transistor used at temperature 780C.
Find the new maximum value of power dissipation.
Find the set of new maximum of IC if VCE=10V,
20V and 40 V.
40. Solution
• Step 1:
Temperature increase : 780C – 250C = 530C
• Step 2:
Derate transistor : 0.66mW/0C x 530C = 35 mW
• Step 3:
Maximum power dissipation at 780C = 115W– 35W=80
mW.
• Step 4:
ICmax = PCmax / VCE=80m/10 = 8 mA (point C)
ICmax = PCmax / VCE=80m/20 = 4 mA. (point B)
ICmax = PCmax / VCE=80m/40 = 2 mA (point A)