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A tunnel diode, also known as an Esaki diode, is a semiconductor device that uses quantum tunneling for fast operation, originally invented by Leo Esaki in 1958. It features a p-n junction with heavy doping, exhibiting negative resistance where increased voltage leads to decreased current. Tunnel diodes offer advantages such as high speed, low cost, and low power dissipation, but have drawbacks like low output voltage swing and lack of isolation between input and output, with applications in high-speed switching and microwave oscillators.









