FINFETs were developed to address issues with traditional MOSFETs as components continue to shrink, including short channel effects and higher leakage currents. FINFETs utilize a fin-like structure with a gate on three sides to improve control over the channel and suppress short channel effects. This allows for better scaling to smaller sizes while maintaining performance and lowering power consumption compared to planar MOSFETs and dual-gate devices.

1. FINFET

2. NEED OF MULTIGATE FETS:
 REDUCTION OF SHORT CHANNEL EFFECTS.
 REDUCTION OF LEAKAGE CURRENTS
 MORE COMPACT

3. DUAL GATE FETS:
DOUBLE-GATE (DG) FETS, IN WHICH A SECOND GATE
IS ADDED OPPOSITE THE TRADITIONAL (FIRST) GATE,
HAVE BETTER CONTROL OVER SHORT-CHANNEL
EFFECTS [SCES].
 HIGH TOLERANCE TO SCALING
BETTER INTEGRATION FEASIBILITY.

4. REDUCED GATE LEAKAGE CURRENT:

6. PLANAR MOS STRUCTURE
GATE MISALIGNMENT

8. SHORT CHANNEL EFFECT:
A SHORT-CHANNEL EFFECT IS AN EFFECT WHEREBY A
MOSFET IN WHICH THE CHANNEL LENGTH IS THE
SAME ORDER OF MAGNITUDES AS THE DEPLETION-LAYER
WIDTHS (XDD, XDS) OF THE SOURCE AND DRAIN
JUNCTION.
AS THE CHANNEL LENGTH IS REDUCED TO INCREASE
BOTH SPEED AND NUMBER OF COMPONENTS PER CHIP ,
THEN SHORT CHANNEL EFFECT OCCURS.
As the channel length ‘l’ is reduced to increase both the o
peratiospeedanenumber of components per chip, the so called SCE occurs.

9. PROCESS FLOW OF FINFET:

11. ADVANTAGES:
 HIGHER TECHNOLOGICAL MATURITY THAN
CONVENTIONAL MOSFET, DG-MOSFET
 SUPRESSED SCE
 BETTER CONTROL OF GATE CURRENT
 LOW COST & SCALIBILTY FACTOR
 LOW POWER CONSUMPTION (HIGHER DRIVE
CURRENT AT LOW SUPPLY VOLTAGE)